JP5008681B2 - リソグラフィシミュレーションのための装置 - Google Patents
リソグラフィシミュレーションのための装置 Download PDFInfo
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- JP5008681B2 JP5008681B2 JP2009000846A JP2009000846A JP5008681B2 JP 5008681 B2 JP5008681 B2 JP 5008681B2 JP 2009000846 A JP2009000846 A JP 2009000846A JP 2009000846 A JP2009000846 A JP 2009000846A JP 5008681 B2 JP5008681 B2 JP 5008681B2
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- G06F30/20—Design optimisation, verification or simulation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/32—Circuit design at the digital level
- G06F30/333—Design for testability [DFT], e.g. scan chain or built-in self-test [BIST]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
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- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
- G16Z99/00—Subject matter not provided for in other main groups of this subclass
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
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- Evolutionary Computation (AREA)
- Quality & Reliability (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
従って本発明の目的は、迅速にリソグラフィ処理をシミュレートする装置および方法を提供することにある。
(1)スキャンライン処理または技術を使用しながらサブピクセルバイナリビットマップを満たす。サブピクセルサイズは、最終的なピクセルサイズの部分、例えばピクセルの1/8、であるように選択できる。それぞれのサブピクセルに対して、もしサブピクセルがポリゴンの中にあればサブピクセルは1で満たされ、さもなければ0で満たされる。さらに洗練された技術はディザリングを含み、それは、サブピクセルサイズを減少させることなしに、塗りつぶし解像度を増加させることができる。しかし、サブピクセルの近傍がポリゴンのエッジ(それゆえ、ポリゴンの完全に内部または完全に外部のどちらでもない)であった場合、あるサブピクセルは1として、他は0として満たされる。ディザリングは標準的なコンピュータグラフィック技術である。および/また、
(2)アンチエイリアスフィルタをサブピクセルバイナリビットマップに適用し、さらに同時にビットマップイメージをピクセルサイズマルチレベルイメージ(例えば、グレイレベルイメージ)にするダウンサンプルを適用する。アンチエイリアスフィルタは、イメージ処理の標準的な技術であり、エイリアスを避けるため、ダウンサンプリング前にイメージの空間周波数帯を制限するために使用される。アンチエイリアスフィルタの設計は、ダウンサンプリング後周波数帯のなかに折り返される周波数成分を最小化することが必要である。
・dCD_on_wafer/dCD_error_on_mask、ここでdは微分係数を表す。この特別な感度は、マスク上のCDエラー(CD_error_on_mask)に対するウェーハ上のCD(CD_on_wafer)の微分係数である。つまり、CD_error_on_mask内の単位変化量に対するCD_on_waferの変化量である。この感度はしばしばMEEFと呼ばれる。つまり、マスクエラー強調係数(Mask Error Enhancement Factor)である。二つのサブケースが使用される。
−大域マスクエラーMEEF。このケースの中でマスク上の全てのパターンは同時にバイアスされる。この感度は、マスク全体にわたってマスクバイアス変動に関係する。
−局所マスクエラーMEEF。このケースの中でマスク上のひとつの局所的パターンのみがCDエラーを持っていると仮定される。このエラーはマスク欠陥に関係する。
・dCD/dFocus_of_stepper、つまり、ステッパ焦点に対するウェーハ上のCD感度。
・dCD/dDose_of_stepper、つまり、ステッパの照射線量に対するウェーハ上のCD感度。
・dCD/dAberration_of_stepper、つまり、ステッパの収差に対するウェーハ上のCD感度。
・dCD/dIllumination_pupil_of_stepper、ステッパ上の照射瞳(例えば、そのサイズと形状、瞳の中の照射分布)に対するウェーハ上のCD感度。
・dCD/dNA_of_stepper、つまり、ステッパの開口数に対するウェーハ上のCD感度。
・dCD/dThickness_of_resist、つまり、ウェーハのレジスト薄さに対するウェーハ上のCD感度。
・dCD/Refractive_index_of_resist、つまり、ウェーハ上のレジスト屈折率に対するウェーハ上のCD感度。
・dCD/dResist_stack、つまり、レジストスタックパラメータ(例えばBARCの薄さ)に対するウェーハ上のCD感度。
・dCD/dFlare_of_stepper、つまり、ステッパのフレア量に対するウェーハ上のCD感度。
・dCD/dResist_processing_parameters、つまり、レジスト処理パラメータ(例えば、レジスト焼結時間、レジスト現像時間)に対するウェーハ上のCD感度。
・因子間の相互作用と因子を乱すキー感度を確認するANOVA解析(実験結果の統計的解析をする標準の技術である)。
・線量と焦点のウィンドウをこえた完全なプロセスウィンドウ決定。
・プロセスウィンドウを制限しているデザイン位置を確認。
・プロセスウィンドウを強調するデザイン修正推奨の提供。
12 照射源
14 照射瞳フィルタ
16a〜c レンズサブシステム
18 マスク
20 投影瞳フィルタ
22 ウェーハ
110 装置
112 一般目的タイプのコンピュータ装置
114a アプリケーション処理装置
114b フロントエンド処理装置
116 アクセラレータ装置
116a〜n アクセラレータコンポーネント
118 スイッチ
136 アプリケーション処理デバイス
138a アプリケーションSCSI RAID
138b フロントエンドSCSI RAID
140 フロントエンド処理デバイス
142a ダウンストリームデータスイッチ(ギガビットイーサネット)
142b アップストリームデータスイッチ(ギガビットイーサネット)
144a〜n マイクロプロセッササブシステム
146a1〜nx アクセラレータサブシステム
148a〜n メモリストレージ
150a〜n バス
152a〜x プログラマブルロジック
154a〜x 高速メモリ
156 プログラマブルロジック
158 不揮発性メモリ
Claims (19)
- 集積回路デザインのリソグラフィック処理をシミュレートするための装置であって、
前記シミュレートの第一の部分を実行するマイクロプロセッササブシステムと、
前記マイクロプロセッササブシステムと対になって、前記シミュレートの第二の部分を実行するコプロセッシングアクセラレータであって、前記第二の部分が前記集積回路デザインの空間イメージの少なくとも一部分を計算することを含む、コプロセッシングアクセラレータとを含み、
前記コプロセッシングアクセラレータが、前記第二の部分を並列で実行する複数のプロセッサを含む、装置。 - 前記第二の部分が、前記第一の部分より計算集中的である、請求項1に記載の装置。
- 前記第一の部分が、前記集積回路デザインの少なくとも一部分をピクセルベースのビットマップへ処理することを含む、請求項1に記載の装置。
- 前記ピクセルベースのビットマップが、前記集積回路デザインにおける複数のポリゴンを表しているグレイレベルのイメージを含む、請求項3に記載の装置。
- 前記集積回路デザインが超解像度技術を含み、前記マイクロプロセッササブシステムが、超解像度技術を含んでいる前記デザインの少なくとも一部分における複数のポリゴンを、それについてのピクセルベースのビットマップ表現に変換する、請求項1に記載の装置。
- 前記コプロセッシングアクセラレータが、前記空間イメージの対応する部分を生成するため、ピクセルデータを使用して、高速フーリエ変換を実行する、請求項3に記載の装置。
- 前記コプロセッシングアクセラレータが、前記集積回路デザインによってウェーハ上に形成された前記空間イメージの前記一部分に対応するレジストイメージを計算する、請求項1に記載の装置。
- 前記コプロッセシングアクセラレータが、前記集積回路デザインのピクセルベースのビットマップ表現と、リソグラフィックツールの投影と照射の光学特性を表している行列の係数とを使用して、前記集積回路デザインによってウェーハ上に形成された前記空間イメージの前記一部分に対応するレジストイメージを計算する、請求項3に記載の装置。
- 前記マイクロプロセッササブシステムと前記コプロセッシングアクセラレータと対になって、前記ウェーハ上の計算されたパターンと、望ましい、所定のパターンとを比較する処理システムをさらに含む、請求項8に記載の装置。
- 前記マイクロプロセッササブシステムと前記コプロセッシングアクセラレータと対になって、前記ウェーハ上の計算されたパターンを使用して、前記集積回路デザインのCDを決定する処理システムをさらに含む、請求項8に記載の装置。
- 前記マイクロプロセッササブシステムと前記コプロセッシングアクセラレータと対になって、前記ウェーハ上の計算されたパターンを使用して、前記集積回路デザインのエッジ配置を決定する処理システムをさらに含む、請求項8に記載の装置。
- 前記マイクロプロセッササブシステムと前記コプロセッシングアクセラレータと対になって、リソグラフィックツールの投影と照射の光学特性を表している前記行列の前記係数の変化に応答して計算された前記ウェーハ上のパターンを使用して、印刷感度を決定する処理システムをさらに含む、請求項8に記載の装置。
- リソグラフィックツールの投影と照射の光学特性を表している前記行列の前記係数が、ひとつまたは複数の焦点、線量、開口数、照射開口および収差を表している、請求項12に記載の装置。
- 前記処理システムが、前記印刷感度を使用して、前記リソグラフィックツールの前記投影と照射の光学特性の変数の集合を決定する、請求項13に記載の装置。
- 前記マイクロプロセッササブシステムと前記コプロセッシングアクセラレータと対になって、前記計算されたウェーハ上のパターンと、望ましい、所定のパターンとの間の比較に応答して前記集積回路デザイン内のエラーを発見する処理システムをさらに含む、請求項8に記載の装置。
- 前記処理システムは、エラーの発見に応答して、前記集積回路デザインにおける前記エラーを訂正するため前記集積回路デザインに対する修正を決定する、請求項15に記載の装置。
- 前記空間イメージを計算することは、与えられた照射体系に基づいて前記リソグラフィック処理のために使われるイメージング系の投影光学装置を通過する前記空間イメージをモデル化することを含む、請求項1に記載の装置。
- 前記空間イメージを計算することは、前記リソグラフィック処理のために使われるイメージング系を複数のコヒーレントイメージング系に分解することを含む、請求項1に記載の装置。
- 前記コヒーレントイメージング系が、伝送クロス係数を含む、請求項18に記載の装置。
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US50960003P | 2003-10-07 | 2003-10-07 | |
US60/509,600 | 2003-10-07 | ||
US10/815,573 US7003758B2 (en) | 2003-10-07 | 2004-04-01 | System and method for lithography simulation |
US10/815,573 | 2004-04-01 |
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JP2009000846A Expired - Fee Related JP5008681B2 (ja) | 2003-10-07 | 2009-01-06 | リソグラフィシミュレーションのための装置 |
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Families Citing this family (264)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7480889B2 (en) * | 2003-04-06 | 2009-01-20 | Luminescent Technologies, Inc. | Optimized photomasks for photolithography |
US7698665B2 (en) * | 2003-04-06 | 2010-04-13 | Luminescent Technologies, Inc. | Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern |
US7124394B1 (en) * | 2003-04-06 | 2006-10-17 | Luminescent Technologies, Inc. | Method for time-evolving rectilinear contours representing photo masks |
US20050234684A1 (en) * | 2004-04-19 | 2005-10-20 | Mentor Graphics Corp. | Design for manufacturability |
US7558419B1 (en) * | 2003-08-14 | 2009-07-07 | Brion Technologies, Inc. | System and method for detecting integrated circuit pattern defects |
US7003758B2 (en) | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
EP1530083A3 (en) * | 2003-11-05 | 2006-03-01 | ASML MaskTools B.V. | OPC based on decomposition into eigen-functions |
US7646906B2 (en) | 2004-01-29 | 2010-01-12 | Kla-Tencor Technologies Corp. | Computer-implemented methods for detecting defects in reticle design data |
KR100824031B1 (ko) * | 2004-01-30 | 2008-04-21 | 에이에스엠엘 마스크툴즈 비.브이. | 캘리브레이션된 고유 분해 모델을 이용하여 노광 툴들의믹스/매치로 인한 모델 opc 편차를 예측하고최소화하는 방법 |
US9188974B1 (en) | 2004-02-13 | 2015-11-17 | Kla-Tencor Technologies Corp. | Methods for improved monitor and control of lithography processes |
JP2005258080A (ja) * | 2004-03-11 | 2005-09-22 | Matsushita Electric Ind Co Ltd | レイアウトデータ検証方法、マスクパターン検証方法および回路動作検証方法 |
US7409670B1 (en) * | 2004-04-01 | 2008-08-05 | Altera Corporation | Scheduling logic on a programmable device implemented using a high-level language |
US7370311B1 (en) | 2004-04-01 | 2008-05-06 | Altera Corporation | Generating components on a programmable device using a high-level language |
WO2005098686A2 (en) * | 2004-04-02 | 2005-10-20 | Clear Shape Technologies, Inc. | Modeling resolution enhancement processes in integrated circuit fabrication |
JP2007535135A (ja) * | 2004-04-20 | 2007-11-29 | ライテル・インストルメンツ | リソグラフ投影ツールのエミュレーション法 |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
JP2005309140A (ja) * | 2004-04-22 | 2005-11-04 | Toshiba Corp | フォトマスク製造方法、フォトマスク欠陥修正箇所判定方法、及びフォトマスク欠陥修正箇所判定装置 |
US20060069958A1 (en) * | 2004-05-09 | 2006-03-30 | Sawicki Joseph D | Defect location identification for microdevice manufacturing and test |
US7137085B1 (en) * | 2004-06-01 | 2006-11-14 | Advanced Micro Devices, Inc. | Wafer level global bitmap characterization in integrated circuit technology development |
US7418693B1 (en) | 2004-08-18 | 2008-08-26 | Cadence Design Systems, Inc. | System and method for analysis and transformation of layouts using situations |
JP4904034B2 (ja) * | 2004-09-14 | 2012-03-28 | ケーエルエー−テンカー コーポレイション | レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体 |
CN1800971A (zh) * | 2004-09-14 | 2006-07-12 | Asml蒙片工具有限公司 | 一种用于实施全芯片制造可靠性检查和校正的方法 |
US7739651B2 (en) * | 2004-09-29 | 2010-06-15 | Synopsys, Inc. | Method and apparatus to determine if a pattern is robustly manufacturable |
US7350183B2 (en) * | 2004-11-05 | 2008-03-25 | International Business Machines Corporation | Method for improving optical proximity correction |
US7805701B1 (en) * | 2004-12-07 | 2010-09-28 | National Semiconductor Corporation | Universal two-input logic gate that is configurable and connectable in an integrated circuit by a single mask layer adjustment |
US20060190915A1 (en) * | 2005-01-19 | 2006-08-24 | Smith Adlai H | Machine specific and machine group correction of masks based on machine subsystem performance parameters |
JP4483612B2 (ja) * | 2005-02-09 | 2010-06-16 | ソニー株式会社 | フォトマスクの製造方法、および、半導体デバイスの製造方法 |
US20060242618A1 (en) * | 2005-02-14 | 2006-10-26 | Yao-Ting Wang | Lithographic simulations using graphical processing units |
US7475382B2 (en) * | 2005-02-24 | 2009-01-06 | Synopsys, Inc. | Method and apparatus for determining an improved assist feature configuration in a mask layout |
KR100674964B1 (ko) * | 2005-03-14 | 2007-01-26 | 삼성전자주식회사 | 포토마스크 교정 방법 및 시스템 장치 |
US7519940B2 (en) * | 2005-05-02 | 2009-04-14 | Cadence Design Systems, Inc. | Apparatus and method for compensating a lithography projection tool |
US7853920B2 (en) * | 2005-06-03 | 2010-12-14 | Asml Netherlands B.V. | Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing |
US8219940B2 (en) * | 2005-07-06 | 2012-07-10 | Semiconductor Insights Inc. | Method and apparatus for removing dummy features from a data structure |
US7769225B2 (en) * | 2005-08-02 | 2010-08-03 | Kla-Tencor Technologies Corp. | Methods and systems for detecting defects in a reticle design pattern |
US7488933B2 (en) * | 2005-08-05 | 2009-02-10 | Brion Technologies, Inc. | Method for lithography model calibration |
WO2007019269A2 (en) * | 2005-08-08 | 2007-02-15 | Brion Technologies, Inc. | System and method for creating a focus-exposure model of a lithography process |
US7695876B2 (en) * | 2005-08-31 | 2010-04-13 | Brion Technologies, Inc. | Method for identifying and using process window signature patterns for lithography process control |
KR100982135B1 (ko) * | 2005-09-09 | 2010-09-14 | 에이에스엠엘 네델란즈 비.브이. | 개별 마스크 오차 모델을 사용하는 마스크 검증 방법 및시스템 |
JP5405109B2 (ja) * | 2005-09-13 | 2014-02-05 | ルミネセント テクノロジーズ インコーポレイテッド | フォトリソグラフィのためのシステム、マスク、及び方法 |
JP4195029B2 (ja) * | 2005-09-22 | 2008-12-10 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | 画像補正装置、パターン検査装置、画像補正方法、及び、パターン欠陥検査方法 |
US7346863B1 (en) | 2005-09-28 | 2008-03-18 | Altera Corporation | Hardware acceleration of high-level language code sequences on programmable devices |
WO2007041602A2 (en) * | 2005-10-03 | 2007-04-12 | Luminescent Technologies, Inc. | Lithography verification using guard bands |
WO2007041600A2 (en) * | 2005-10-03 | 2007-04-12 | Luminescent Technologies, Inc. | Mask-pattern determination using topology types |
WO2007041701A2 (en) * | 2005-10-04 | 2007-04-12 | Luminescent Technologies, Inc. | Mask-patterns including intentional breaks |
US7325225B2 (en) * | 2005-10-05 | 2008-01-29 | Yasushi Tanaka | Method and apparatus for reducing OPC model errors |
WO2007044557A2 (en) | 2005-10-06 | 2007-04-19 | Luminescent Technologies, Inc. | System, masks, and methods for photomasks optimized with approximate and accurate merit functions |
KR100725170B1 (ko) * | 2005-11-15 | 2007-06-04 | 삼성전자주식회사 | 포토마스크의 제작을 위한 시스템 및 방법 |
US7676077B2 (en) | 2005-11-18 | 2010-03-09 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US8041103B2 (en) * | 2005-11-18 | 2011-10-18 | Kla-Tencor Technologies Corp. | Methods and systems for determining a position of inspection data in design data space |
US7570796B2 (en) | 2005-11-18 | 2009-08-04 | Kla-Tencor Technologies Corp. | Methods and systems for utilizing design data in combination with inspection data |
US7546574B2 (en) | 2005-12-02 | 2009-06-09 | Gauda, Inc. | Optical proximity correction on hardware or software platforms with graphical processing units |
US7631286B2 (en) * | 2005-12-30 | 2009-12-08 | Wafertech Llc | Automated metrology recipe generation |
US7921383B1 (en) * | 2006-01-11 | 2011-04-05 | Olambda, Inc | Photolithographic process simulation including efficient result computation for multiple process variation values |
US7694267B1 (en) * | 2006-02-03 | 2010-04-06 | Brion Technologies, Inc. | Method for process window optimized optical proximity correction |
US7584450B2 (en) * | 2006-02-17 | 2009-09-01 | Synopsys, Inc. | Method and apparatus for using a database to quickly identify and correct a manufacturing problem area in a layout |
US7954072B2 (en) * | 2006-05-15 | 2011-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Model import for electronic design automation |
JP2007324342A (ja) * | 2006-05-31 | 2007-12-13 | Nikon Corp | 露光方法、露光システムの管理方法、露光システム、及びデバイス製造方法 |
US7849423B1 (en) | 2006-07-21 | 2010-12-07 | Cadence Design Systems, Inc. | Method of verifying photomask data based on models of etch and lithography processes |
KR100807229B1 (ko) * | 2006-07-31 | 2008-02-28 | 삼성전자주식회사 | 마스크의 설계 패턴 보정 방법 |
US7966579B2 (en) * | 2006-08-04 | 2011-06-21 | Infineon Technologies Ag | Methods of optical proximity correction |
US8331645B2 (en) * | 2006-09-20 | 2012-12-11 | Luminescent Technologies, Inc. | Photo-mask and wafer image reconstruction |
US8644588B2 (en) * | 2006-09-20 | 2014-02-04 | Luminescent Technologies, Inc. | Photo-mask and wafer image reconstruction |
US8120753B2 (en) * | 2006-11-08 | 2012-02-21 | Asml Masktools B.V. | Method, program product and apparatus for generating a calibrated pupil kernel and method of using the same in a lithography simulation process |
US7877722B2 (en) * | 2006-12-19 | 2011-01-25 | Kla-Tencor Corp. | Systems and methods for creating inspection recipes |
EP2097788A1 (en) * | 2006-12-21 | 2009-09-09 | Nxp B.V. | A method and system for identifying weak points in an integrated circuit design |
US8194968B2 (en) * | 2007-01-05 | 2012-06-05 | Kla-Tencor Corp. | Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions |
US8611637B2 (en) * | 2007-01-11 | 2013-12-17 | Kla-Tencor Corporation | Wafer plane detection of lithographically significant contamination photomask defects |
US7995832B2 (en) * | 2007-01-11 | 2011-08-09 | Kla-Tencor Corporation | Photomask inspection and verification by lithography image reconstruction using imaging pupil filters |
KR101769258B1 (ko) | 2007-01-18 | 2017-08-17 | 가부시키가이샤 니콘 | 스캐너 기반의 광 근접 보정 시스템 및 이용 방법 |
US8089666B2 (en) * | 2007-01-25 | 2012-01-03 | Ricoh Company, Ltd. | Image forming apparatus |
US8154770B2 (en) * | 2007-01-31 | 2012-04-10 | Ricoh Company, Ltd. | Image forming apparatus |
US7765515B2 (en) * | 2007-02-03 | 2010-07-27 | Anchor Semiconductor, Inc. | Pattern match based optical proximity correction and verification of integrated circuit layout |
US7974728B2 (en) * | 2007-05-04 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | System for extraction of key process parameters from fault detection classification to enable wafer prediction |
US7962863B2 (en) * | 2007-05-07 | 2011-06-14 | Kla-Tencor Corp. | Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer |
US7738093B2 (en) | 2007-05-07 | 2010-06-15 | Kla-Tencor Corp. | Methods for detecting and classifying defects on a reticle |
US8213704B2 (en) * | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
US7707538B2 (en) * | 2007-06-15 | 2010-04-27 | Brion Technologies, Inc. | Multivariable solver for optical proximity correction |
US8191018B1 (en) * | 2007-07-17 | 2012-05-29 | Kovio, Inc. | Methods and software for printing materials onto a substrate |
US7796804B2 (en) | 2007-07-20 | 2010-09-14 | Kla-Tencor Corp. | Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer |
US7711514B2 (en) * | 2007-08-10 | 2010-05-04 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan |
US7703069B1 (en) | 2007-08-14 | 2010-04-20 | Brion Technologies, Inc. | Three-dimensional mask model for photolithography simulation |
TWI469235B (zh) * | 2007-08-20 | 2015-01-11 | Kla Tencor Corp | 決定實際缺陷是潛在系統性缺陷或潛在隨機缺陷之由電腦實施之方法 |
US9779186B2 (en) | 2007-08-28 | 2017-10-03 | Asml Netherlands B.V. | Methods for performing model-based lithography guided layout design |
US8194255B2 (en) * | 2007-09-14 | 2012-06-05 | Ricoh Company, Ltd. | Image forming apparatus |
US20090089031A1 (en) * | 2007-09-28 | 2009-04-02 | Rockwell Automation Technologies, Inc. | Integrated simulation of controllers and devices |
US8069021B2 (en) * | 2007-09-28 | 2011-11-29 | Rockwell Automation Technologies, Inc. | Distributed simulation and synchronization |
US20090089029A1 (en) * | 2007-09-28 | 2009-04-02 | Rockwell Automation Technologies, Inc. | Enhanced execution speed to improve simulation performance |
US7801710B2 (en) * | 2007-09-28 | 2010-09-21 | Rockwell Automation Technologies, Inc. | Simulation controls for model variability and randomness |
US8548777B2 (en) * | 2007-09-28 | 2013-10-01 | Rockwell Automation Technologies, Inc. | Automated recommendations from simulation |
US7707539B2 (en) * | 2007-09-28 | 2010-04-27 | Synopsys, Inc. | Facilitating process model accuracy by modeling mask corner rounding effects |
US20090089234A1 (en) * | 2007-09-28 | 2009-04-02 | Rockwell Automation Technologies, Inc. | Automated code generation for simulators |
NL1036189A1 (nl) | 2007-12-05 | 2009-06-08 | Brion Tech Inc | Methods and System for Lithography Process Window Simulation. |
US8073288B2 (en) * | 2008-01-16 | 2011-12-06 | International Business Machines Corporation | Rendering a mask using coarse mask representation |
US7975244B2 (en) * | 2008-01-24 | 2011-07-05 | International Business Machines Corporation | Methodology and system for determining numerical errors in pixel-based imaging simulation in designing lithographic masks |
US7861196B2 (en) * | 2008-01-31 | 2010-12-28 | Cadence Design Systems, Inc. | System and method for multi-exposure pattern decomposition |
US8139844B2 (en) * | 2008-04-14 | 2012-03-20 | Kla-Tencor Corp. | Methods and systems for determining a defect criticality index for defects on wafers |
US8082524B2 (en) | 2008-04-15 | 2011-12-20 | Luminescent Technologies, Inc. | Mask patterns for use in multiple-exposure lithography |
JP5225463B2 (ja) | 2008-06-03 | 2013-07-03 | エーエスエムエル ネザーランズ ビー.ブイ. | レンズ加熱補償方法 |
CN102057330B (zh) | 2008-06-03 | 2013-07-17 | Asml荷兰有限公司 | 基于模型的扫描器调节方法 |
US8381152B2 (en) | 2008-06-05 | 2013-02-19 | Cadence Design Systems, Inc. | Method and system for model-based design and layout of an integrated circuit |
US8542340B2 (en) * | 2008-07-07 | 2013-09-24 | Asml Netherlands B.V. | Illumination optimization |
US10025198B2 (en) * | 2008-07-07 | 2018-07-17 | Asml Netherlands B.V. | Smart selection and/or weighting of parameters for lithographic process simulation |
US20100098323A1 (en) * | 2008-07-18 | 2010-04-22 | Agrawal Amit K | Method and Apparatus for Determining 3D Shapes of Objects |
WO2010014609A2 (en) | 2008-07-28 | 2010-02-04 | Kla-Tencor Corporation | Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer |
US8069423B2 (en) * | 2008-08-11 | 2011-11-29 | Cadence Design Systems, Inc. | System and method for model based multi-patterning optimization |
US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
NL2003654A (en) | 2008-11-06 | 2010-05-10 | Brion Tech Inc | Methods and system for lithography calibration. |
NL2003696A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Scanner model representation with transmission cross coefficients. |
NL2003702A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Pattern selection for lithographic model calibration. |
CN102224459B (zh) | 2008-11-21 | 2013-06-19 | Asml荷兰有限公司 | 用于优化光刻过程的方法及设备 |
NL2003699A (en) | 2008-12-18 | 2010-06-21 | Brion Tech Inc | Method and system for lithography process-window-maximixing optical proximity correction. |
IT1392495B1 (it) * | 2008-12-29 | 2012-03-09 | St Microelectronics Srl | Metodo per progettare un acceleratore ad elevate prestazioni di tipo asic (circuito integrato ad applicazione specifica - application-specific integrated circuit) |
US8239786B2 (en) * | 2008-12-30 | 2012-08-07 | Asml Netherlands B.V. | Local multivariable solver for optical proximity correction in lithographic processing method, and device manufactured thereby |
US8250495B2 (en) * | 2009-01-16 | 2012-08-21 | Mentor Graphics Corporation | Mask decomposition for double dipole lithography |
US8775101B2 (en) | 2009-02-13 | 2014-07-08 | Kla-Tencor Corp. | Detecting defects on a wafer |
US8204297B1 (en) | 2009-02-27 | 2012-06-19 | Kla-Tencor Corp. | Methods and systems for classifying defects detected on a reticle |
US8112241B2 (en) * | 2009-03-13 | 2012-02-07 | Kla-Tencor Corp. | Methods and systems for generating an inspection process for a wafer |
US8479125B2 (en) | 2009-03-31 | 2013-07-02 | Christophe Pierrat | Lithography modeling and applications |
JP4942800B2 (ja) | 2009-08-18 | 2012-05-30 | 株式会社ニューフレアテクノロジー | 検査装置 |
JP5403744B2 (ja) * | 2009-08-19 | 2014-01-29 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法、および、荷電粒子ビーム描画用データの処理装置 |
US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
NL2005522A (en) * | 2009-10-28 | 2011-05-02 | Asml Netherlands Bv | Pattern selection for full-chip source and mask optimization. |
WO2011051791A2 (en) * | 2009-10-30 | 2011-05-05 | Synopsys, Inc. | Method and system for lithography hotspot correction of a post-route layout |
US8141027B2 (en) * | 2010-01-05 | 2012-03-20 | International Business Machines Corporation | Automated sensitivity definition and calibration for design for manufacturing tools |
JP4918598B2 (ja) | 2010-01-18 | 2012-04-18 | 株式会社ニューフレアテクノロジー | 検査装置および検査方法 |
US8355807B2 (en) * | 2010-01-22 | 2013-01-15 | Synopsys, Inc. | Method and apparatus for using aerial image sensitivity to model mask errors |
US8312413B2 (en) * | 2010-01-22 | 2012-11-13 | International Business Machines Corporation | Navigating analytical tools using layout software |
US8812145B2 (en) | 2010-01-22 | 2014-08-19 | Synopsys, Inc. | Modeling mask errors using aerial image sensitivity |
JP5695924B2 (ja) | 2010-02-01 | 2015-04-08 | 株式会社ニューフレアテクノロジー | 欠陥推定装置および欠陥推定方法並びに検査装置および検査方法 |
US8797721B2 (en) | 2010-02-02 | 2014-08-05 | Apple Inc. | Portable electronic device housing with outer glass surfaces |
US8463016B2 (en) * | 2010-02-05 | 2013-06-11 | Luminescent Technologies, Inc. | Extending the field of view of a mask-inspection image |
US8402399B2 (en) | 2010-04-30 | 2013-03-19 | International Business Machines Corporation | Method and system for computing fourier series coefficients for mask layouts using FFT |
KR101930913B1 (ko) * | 2010-06-17 | 2018-12-19 | 노바 메주어링 인스트루먼츠 엘티디. | 패턴 구조들의 광학적 정밀 검사를 최적화하는 방법 및 시스템 |
DE102011078927B4 (de) * | 2010-07-12 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren zum Korrigieren von Fehlern einer photolithographischen Maske |
US8781781B2 (en) | 2010-07-30 | 2014-07-15 | Kla-Tencor Corp. | Dynamic care areas |
US8612903B2 (en) | 2010-09-14 | 2013-12-17 | Luminescent Technologies, Inc. | Technique for repairing a reflective photo-mask |
US8555214B2 (en) | 2010-09-14 | 2013-10-08 | Luminescent Technologies, Inc. | Technique for analyzing a reflective photo-mask |
DE102011083774B4 (de) | 2010-10-04 | 2019-06-13 | Carl Zeiss Sms Ltd. | Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern |
NL2007579A (en) | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Pattern-dependent proximity matching/tuning including light manipulation by projection optics. |
NL2007642A (en) | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Optimization flows of source, mask and projection optics. |
NL2007577A (en) * | 2010-11-10 | 2012-05-14 | Asml Netherlands Bv | Optimization of source, mask and projection optics. |
NL2007578A (en) | 2010-11-17 | 2012-05-22 | Asml Netherlands Bv | Pattern-independent and hybrid matching/tuning including light manipulation by projection optics. |
US8619236B2 (en) | 2010-11-24 | 2013-12-31 | International Business Machines Corporation | Determining lithographic set point using optical proximity correction verification simulation |
US8458622B2 (en) | 2010-11-29 | 2013-06-04 | Luminescent Technologies, Inc. | Photo-mask acceptance technique |
US8386968B2 (en) | 2010-11-29 | 2013-02-26 | Luminescent Technologies, Inc. | Virtual photo-mask critical-dimension measurement |
JP5591675B2 (ja) | 2010-12-06 | 2014-09-17 | 株式会社ニューフレアテクノロジー | 検査装置および検査方法 |
US9588439B1 (en) * | 2010-12-21 | 2017-03-07 | Asml Netherlands B.V. | Information matrix creation and calibration test pattern selection based on computational lithography model parameters |
US8365108B2 (en) * | 2011-01-06 | 2013-01-29 | International Business Machines Corporation | Generating cut mask for double-patterning process |
US8499260B2 (en) | 2011-01-26 | 2013-07-30 | International Business Machines Corporation | Optical proximity correction verification accounting for mask deviations |
US8577489B2 (en) | 2011-01-26 | 2013-11-05 | International Business Machines Corporation | Diagnosing in-line critical dimension control adjustments using optical proximity correction verification |
US9005852B2 (en) | 2012-09-10 | 2015-04-14 | Dino Technology Acquisition Llc | Technique for repairing a reflective photo-mask |
US8656323B2 (en) * | 2011-02-22 | 2014-02-18 | Kla-Tencor Corporation | Based device risk assessment |
US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
NL2008285A (en) * | 2011-03-11 | 2012-09-12 | Asml Netherlands Bv | Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process. |
US8618518B2 (en) * | 2011-03-15 | 2013-12-31 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Apparatus and method for forming a solid immersion lens using a binary bitmap milling pattern |
US9170211B2 (en) | 2011-03-25 | 2015-10-27 | Kla-Tencor Corp. | Design-based inspection using repeating structures |
US10102619B1 (en) | 2011-03-28 | 2018-10-16 | Hermes Microvision, Inc. | Inspection method and system |
NL2008311A (en) * | 2011-04-04 | 2012-10-08 | Asml Netherlands Bv | Integration of lithography apparatus and mask optimization process with multiple patterning process. |
NL2008310A (en) * | 2011-04-05 | 2012-10-08 | Asml Netherlands Bv | Lithographic method and assembly. |
NL2008924A (en) * | 2011-06-22 | 2013-01-02 | Asml Netherlands Bv | System and method to ensure source and image stability. |
US8572518B2 (en) * | 2011-06-23 | 2013-10-29 | Nikon Precision Inc. | Predicting pattern critical dimensions in a lithographic exposure process |
US9034542B2 (en) | 2011-06-25 | 2015-05-19 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
US8653454B2 (en) | 2011-07-13 | 2014-02-18 | Luminescent Technologies, Inc. | Electron-beam image reconstruction |
CN102540773B (zh) * | 2011-08-29 | 2014-06-04 | 上海华力微电子有限公司 | 一种新型的利用曝光后烘烤的opc模型检验光刻工艺的方法 |
US9087367B2 (en) | 2011-09-13 | 2015-07-21 | Kla-Tencor Corp. | Determining design coordinates for wafer defects |
US8719739B2 (en) * | 2011-09-19 | 2014-05-06 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography |
US8832621B1 (en) | 2011-11-28 | 2014-09-09 | Cadence Design Systems, Inc. | Topology design using squish patterns |
JP6324318B2 (ja) * | 2011-12-19 | 2018-05-16 | キャノン・ナノテクノロジーズ・インコーポレーテッド | インプリントリソグラフィー用のシームレスな大面積マスターテンプレートの製造方法 |
NL2009982A (en) | 2012-01-10 | 2013-07-15 | Asml Netherlands Bv | Source mask optimization to reduce stochastic effects. |
US8831334B2 (en) | 2012-01-20 | 2014-09-09 | Kla-Tencor Corp. | Segmentation for wafer inspection |
NL2010162A (en) | 2012-02-03 | 2013-08-06 | Asml Netherlands Bv | A lithography model for 3d resist profile simulations. |
NL2010163A (en) * | 2012-02-07 | 2013-08-08 | Asml Netherlands Bv | Substrate-topography-aware lithography modeling. |
US9940427B2 (en) | 2012-02-09 | 2018-04-10 | Asml Netherlands B.V. | Lens heating aware source mask optimization for advanced lithography |
US9224183B2 (en) * | 2012-03-28 | 2015-12-29 | Intel Corporation | Projection of a plurality of structured light patterns |
US8631360B2 (en) * | 2012-04-17 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methodology of optical proximity correction optimization |
US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
US8464193B1 (en) | 2012-05-18 | 2013-06-11 | International Business Machines Corporation | Optical proximity correction (OPC) methodology employing multiple OPC programs |
US8826200B2 (en) | 2012-05-25 | 2014-09-02 | Kla-Tencor Corp. | Alteration for wafer inspection |
CN104395828B (zh) | 2012-05-31 | 2018-02-02 | Asml荷兰有限公司 | 基于梯度的图案和评价点选择 |
US8948495B2 (en) * | 2012-08-01 | 2015-02-03 | Kla-Tencor Corp. | Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer |
JP5917337B2 (ja) | 2012-08-24 | 2016-05-11 | 株式会社東芝 | パターンデータ作成方法 |
US9330223B2 (en) | 2012-09-28 | 2016-05-03 | International Business Machines Corporation | Optical rule checking for detecting at risk structures for overlay issues |
US9189844B2 (en) | 2012-10-15 | 2015-11-17 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific information |
US9053527B2 (en) | 2013-01-02 | 2015-06-09 | Kla-Tencor Corp. | Detecting defects on a wafer |
US9134254B2 (en) | 2013-01-07 | 2015-09-15 | Kla-Tencor Corp. | Determining a position of inspection system output in design data space |
US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
WO2014149197A1 (en) | 2013-02-01 | 2014-09-25 | Kla-Tencor Corporation | Detecting defects on a wafer using defect-specific and multi-channel information |
US10359704B2 (en) | 2013-02-22 | 2019-07-23 | Asml Netherlands B.V. | Lithography model for three-dimensional patterning device |
US10191384B2 (en) | 2013-02-25 | 2019-01-29 | Asml Netherlands B.V. | Discrete source mask optimization |
US9091935B2 (en) | 2013-03-11 | 2015-07-28 | Kla-Tencor Corporation | Multistage extreme ultra-violet mask qualification |
US9494854B2 (en) | 2013-03-14 | 2016-11-15 | Kla-Tencor Corporation | Technique for repairing an EUV photo-mask |
US9865512B2 (en) | 2013-04-08 | 2018-01-09 | Kla-Tencor Corp. | Dynamic design attributes for wafer inspection |
US9310320B2 (en) | 2013-04-15 | 2016-04-12 | Kla-Tencor Corp. | Based sampling and binning for yield critical defects |
WO2015032588A1 (en) | 2013-09-06 | 2015-03-12 | Asml Netherlands B.V. | Methodology to generate guiding templates for directed self-assembly |
KR102137072B1 (ko) | 2013-10-01 | 2020-07-24 | 에이에스엠엘 네델란즈 비.브이. | 프로파일 인식 소스-마스크 최적화 |
CN105849643B (zh) | 2013-12-17 | 2019-07-19 | Asml荷兰有限公司 | 良品率估计和控制 |
WO2015112979A1 (en) * | 2014-01-26 | 2015-07-30 | Coventor, Inc. | Modeling pattern dependent effects for a 3-d virtual semiconductor fabrication environment |
WO2015121127A1 (en) | 2014-02-11 | 2015-08-20 | Asml Netherlands B.V. | Model for calculating a stochastic variation in an arbitrary pattern |
CN105980934B (zh) * | 2014-02-12 | 2018-10-09 | Asml荷兰有限公司 | 过程窗口的优化方法 |
WO2015139951A1 (en) | 2014-03-18 | 2015-09-24 | Asml Netherlands B.V. | Pattern placement error aware optimization |
TWI624765B (zh) | 2014-04-14 | 2018-05-21 | Asml荷蘭公司 | 用以改良微影程序之電腦實施方法及電腦程式產品 |
JP6482190B2 (ja) * | 2014-06-10 | 2019-03-13 | キヤノン株式会社 | リソグラフィに関するシミュレーションを行う演算方法、装置及びプログラム |
WO2015197313A1 (en) | 2014-06-25 | 2015-12-30 | Asml Netherlands B.V. | Etch variation tolerant optimization |
CN106575630B (zh) * | 2014-07-13 | 2021-05-25 | 科磊股份有限公司 | 使用叠加及成品率关键图案的度量 |
WO2016008711A1 (en) | 2014-07-14 | 2016-01-21 | Asml Netherlands B.V. | Optimization of assist features and source |
US10133191B2 (en) * | 2014-07-21 | 2018-11-20 | Asml Netherlands B.V. | Method for determining a process window for a lithographic process, associated apparatuses and a computer program |
US9964850B2 (en) | 2014-07-31 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to mitigate defect printability for ID pattern |
US10345715B2 (en) | 2014-09-02 | 2019-07-09 | Nikon Corporation | Pattern-edge placement predictor and monitor for lithographic exposure tool |
US10018922B2 (en) | 2014-09-02 | 2018-07-10 | Nikon Corporation | Tuning of optical projection system to optimize image-edge placement |
JP6352133B2 (ja) * | 2014-09-26 | 2018-07-04 | 株式会社Screenホールディングス | 位置検出装置、基板処理装置、位置検出方法および基板処理方法 |
CN107111237B (zh) | 2014-10-02 | 2020-02-28 | Asml荷兰有限公司 | 辅助特征的基于规则的部署 |
RU2604985C2 (ru) * | 2014-11-11 | 2016-12-20 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный технический университет" (ФГБОУ ВО "ВГТУ", ВГТУ) | Способ организации вычислений на графических процессорах для моделирования помехоустойчивости низкоплотностных кодеков |
WO2016096309A1 (en) | 2014-12-15 | 2016-06-23 | Asml Netherlands B.V. | Optimization based on machine learning |
CN107111243A (zh) | 2014-12-17 | 2017-08-29 | Asml荷兰有限公司 | 使用图案形成装置形貌引入的相位的方法和设备 |
KR20170095358A (ko) | 2014-12-17 | 2017-08-22 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 디바이스 토포그래피 유도 위상을 이용하는 장치 및 방법 |
CN107111244A (zh) | 2014-12-17 | 2017-08-29 | Asml荷兰有限公司 | 使用图案形成装置形貌引入的相位的方法和设备 |
WO2016096668A1 (en) | 2014-12-17 | 2016-06-23 | Asml Netherlands B.V. | Hotspot aware dose correction |
WO2016096333A1 (en) | 2014-12-18 | 2016-06-23 | Asml Netherlands B.V. | A lithography model for 3d features |
TWI620980B (zh) | 2015-02-13 | 2018-04-11 | Asml荷蘭公司 | 影像對數斜率(ils)最佳化 |
US9471743B1 (en) | 2015-03-31 | 2016-10-18 | Globalfoundries Inc. | Predicting process fail limits |
US20160329312A1 (en) * | 2015-05-05 | 2016-11-10 | Sean M. O'Mullan | Semiconductor chip with offloaded logic |
US10670973B2 (en) | 2015-05-20 | 2020-06-02 | Asml Netherlands B.V. | Coloring aware optimization |
US10866523B2 (en) * | 2015-06-16 | 2020-12-15 | Asml Netherlands B.V. | Process window tracker |
JPWO2016208178A1 (ja) * | 2015-06-25 | 2018-04-19 | 日本電気株式会社 | アクセラレータ制御装置、アクセラレータ制御方法およびプログラム |
US9910348B2 (en) * | 2015-06-30 | 2018-03-06 | Globalfoundries Inc. | Method of simultaneous lithography and etch correction flow |
KR102420726B1 (ko) * | 2015-08-06 | 2022-07-15 | 케이엘에이 코포레이션 | 타겟의 에어리얼 이미지에 기초한 변환을 이용하는 초점 계측 및 타겟 |
US10699971B2 (en) * | 2015-08-17 | 2020-06-30 | Qoniac Gmbh | Method for processing of a further layer on a semiconductor wafer |
US10008422B2 (en) * | 2015-08-17 | 2018-06-26 | Qoniac Gmbh | Method for assessing the usability of an exposed and developed semiconductor wafer |
JP6527808B2 (ja) | 2015-10-27 | 2019-06-05 | 株式会社ニューフレアテクノロジー | 検査方法および検査装置 |
US11016397B2 (en) | 2015-12-17 | 2021-05-25 | Asml Netherlands B.V. | Source separation from metrology data |
KR102444706B1 (ko) * | 2015-12-22 | 2022-09-19 | 에이에스엠엘 네델란즈 비.브이. | 프로세스-윈도우 특성화를 위한 장치 및 방법 |
US10437158B2 (en) | 2015-12-31 | 2019-10-08 | Asml Netherlands B.V. | Metrology by reconstruction |
US20170199511A1 (en) * | 2016-01-12 | 2017-07-13 | Globalfoundries Inc. | Signal detection metholodogy for fabrication control |
US10796063B2 (en) | 2016-04-14 | 2020-10-06 | Asml Netherlands B.V. | Mapping of patterns between design layout and patterning device |
KR102370347B1 (ko) * | 2017-02-02 | 2022-03-04 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치 및 연계된 컴퓨터 제품 |
US10915031B1 (en) * | 2017-02-07 | 2021-02-09 | Synopsys, Inc. | Optical source compensation |
WO2018206275A1 (en) * | 2017-05-12 | 2018-11-15 | Asml Netherlands B.V. | Methods for evaluating resist development |
EP3688529B1 (en) | 2017-09-27 | 2023-12-13 | ASML Netherlands B.V. | Method of determining control parameters of a device manufacturing process |
EP3462240A1 (en) | 2017-09-27 | 2019-04-03 | ASML Netherlands B.V. | Method of determining control parameters of a device manufacturing process |
KR102516045B1 (ko) | 2017-10-11 | 2023-03-30 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정을 위한 최적화의 흐름 |
CN108009352A (zh) * | 2017-11-30 | 2018-05-08 | 上海华力微电子有限公司 | 一种光刻版图的填充流程及光刻掩膜的设计方法 |
US11625520B2 (en) | 2017-12-04 | 2023-04-11 | Asml Netherlands B.V. | Systems and methods for predicting layer deformation |
CN116125756A (zh) * | 2017-12-22 | 2023-05-16 | Asml荷兰有限公司 | 用于减少抗蚀剂模型预测误差的系统和方法 |
WO2019121486A1 (en) | 2017-12-22 | 2019-06-27 | Asml Netherlands B.V. | Process window based on defect probability |
CN111512236B (zh) | 2017-12-22 | 2023-01-24 | Asml荷兰有限公司 | 涉及光学像差的图案化过程改进 |
US10529534B2 (en) * | 2018-01-05 | 2020-01-07 | Kla-Tencor Corporation | Compensating for scanning electron microscope beam distortion-induced metrology error using design |
US10796065B2 (en) * | 2018-06-21 | 2020-10-06 | Kla-Tencor Corporation | Hybrid design layout to identify optical proximity correction-related systematic defects |
IL281060B2 (en) * | 2018-08-28 | 2023-11-01 | Asml Netherlands Bv | Methods and systems of optimal meteorological guidance |
US20210357566A1 (en) | 2018-10-17 | 2021-11-18 | Asml Netherland B.V. | Methods for generating characteristic pattern and training machine learning model |
WO2020094389A1 (en) | 2018-11-08 | 2020-05-14 | Asml Netherlands B.V. | Failure model for predicting failure due to resist layer |
EP3650940A1 (en) | 2018-11-09 | 2020-05-13 | ASML Netherlands B.V. | A method in the manufacturing process of a device, a non-transitory computer-readable medium and a system configured to perform the method |
WO2020141051A1 (en) | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Determining subset of components of an optical characteristic of patterning apparatus |
JP7128756B2 (ja) * | 2019-02-08 | 2022-08-31 | 株式会社Screenホールディングス | モデルデータ生成方法、パターン測定方法、補正パターンデータ生成方法およびモデルデータ生成装置 |
KR102641682B1 (ko) | 2019-02-20 | 2024-02-27 | 에이에스엠엘 네델란즈 비.브이. | 반도체 디바이스의 제조 프로세스를 특성화하기 위한 방법 |
KR20210117332A (ko) | 2019-02-25 | 2021-09-28 | 에이에스엠엘 네델란즈 비.브이. | 프린트된 패턴들의 확률적 변동을 결정하는 방법 |
WO2020212107A1 (en) | 2019-04-15 | 2020-10-22 | Asml Netherlands B.V. | Method for determining corrections to features of a mask |
US20220335333A1 (en) | 2019-09-16 | 2022-10-20 | Asml Netherlands B.V. | Methods for generating characteristic pattern and training machine learning model |
EP3822703A1 (en) | 2019-11-18 | 2021-05-19 | ASML Netherlands B.V. | Method for determining a field-of-view setting |
CN114514476A (zh) | 2019-10-08 | 2022-05-17 | Asml荷兰有限公司 | 用于确定视场设定的方法 |
US11126159B2 (en) * | 2020-01-09 | 2021-09-21 | Siemens Industry Software Inc. | Multi-objective calibrations of lithography models |
CN115104068A (zh) | 2020-02-21 | 2022-09-23 | Asml荷兰有限公司 | 用于以基于缺陷的过程窗口为基础的校准模拟过程的方法 |
KR20220026101A (ko) * | 2020-08-25 | 2022-03-04 | 삼성전자주식회사 | 반도체 장치 제조 시스템 |
IL311255A (en) | 2021-09-15 | 2024-05-01 | Asml Netherlands Bv | Separation of sources from metrology data |
Family Cites Families (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4926489A (en) * | 1983-03-11 | 1990-05-15 | Kla Instruments Corporation | Reticle inspection system |
US6749864B2 (en) * | 1986-02-13 | 2004-06-15 | Takeda Chemical Industries, Ltd. | Stabilized pharmaceutical composition |
JP2638613B2 (ja) * | 1987-06-25 | 1997-08-06 | エイ・ティ・アンド・ティ・コーポレーション | プログラマブル アクセラレータ及びその方法 |
JPS6426969U (ja) | 1987-08-11 | 1989-02-15 | ||
US5182718A (en) * | 1989-04-04 | 1993-01-26 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light |
EP0430501B1 (en) * | 1989-11-17 | 1999-02-03 | Digital Equipment Corporation | System and method for drawing antialiased polygons |
US5491495A (en) * | 1990-11-13 | 1996-02-13 | Wang Laboratories, Inc. | User interface having simulated devices |
US5563702A (en) * | 1991-08-22 | 1996-10-08 | Kla Instruments Corporation | Automated photomask inspection apparatus and method |
JPH07503522A (ja) * | 1992-02-08 | 1995-04-13 | オットー ツーヒェンハーゲン ゲゼルシャフト ミット ベシュレンクテル ハフツンク ウント ツェーオー.カーゲー | ダブルシートバルブ |
US5308991A (en) * | 1992-06-02 | 1994-05-03 | National Semiconductor Corporation | Method and apparatus for making a predistorted reticle to compensate for lens distortions |
US6272238B1 (en) * | 1992-12-28 | 2001-08-07 | Canon Kabushiki Kaisha | Character recognizing method and apparatus |
JPH06231275A (ja) * | 1993-01-29 | 1994-08-19 | Hitachi Ltd | 画像シミュレーション方法 |
DE59409837D1 (de) * | 1993-11-23 | 2001-09-27 | Ciba Sc Holding Ag | o-Hydroxyphenyl-s-triazine enthaltende stabilisierte Polymere |
US6090555A (en) * | 1997-12-11 | 2000-07-18 | Affymetrix, Inc. | Scanned image alignment systems and methods |
US5774222A (en) * | 1994-10-07 | 1998-06-30 | Hitachi, Ltd. | Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected |
JP3409493B2 (ja) * | 1995-03-13 | 2003-05-26 | ソニー株式会社 | マスクパターンの補正方法および補正装置 |
US5663893A (en) * | 1995-05-03 | 1997-09-02 | Microunity Systems Engineering, Inc. | Method for generating proximity correction features for a lithographic mask pattern |
US5680588A (en) * | 1995-06-06 | 1997-10-21 | International Business Machines Corporation | Method and system for optimizing illumination in an optical photolithography projection imaging system |
US5864342A (en) * | 1995-08-04 | 1999-01-26 | Microsoft Corporation | Method and system for rendering graphical objects to image chunks |
JP3934719B2 (ja) * | 1995-12-22 | 2007-06-20 | 株式会社東芝 | 光近接効果補正方法 |
US5723233A (en) * | 1996-02-27 | 1998-03-03 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
JP3368287B2 (ja) * | 1996-05-23 | 2003-01-20 | 学校法人金沢工業大学 | 磁気測定装置 |
US5888675A (en) * | 1996-12-04 | 1999-03-30 | Advanced Micro Devices, Inc. | Reticle that compensates for radiation-induced lens error in a photolithographic system |
IL123473A (en) * | 1997-02-28 | 2001-08-08 | Fiekowsky Peter J | High accuracy particle dimension measurement system |
US6078738A (en) * | 1997-05-08 | 2000-06-20 | Lsi Logic Corporation | Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization |
JPH10340128A (ja) * | 1997-06-10 | 1998-12-22 | Hitachi Ltd | データ処理装置及び移動体通信端末装置 |
US6453452B1 (en) * | 1997-12-12 | 2002-09-17 | Numerical Technologies, Inc. | Method and apparatus for data hierarchy maintenance in a system for mask description |
US7107571B2 (en) * | 1997-09-17 | 2006-09-12 | Synopsys, Inc. | Visual analysis and verification system using advanced tools |
US6757645B2 (en) * | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
US6370679B1 (en) * | 1997-09-17 | 2002-04-09 | Numerical Technologies, Inc. | Data hierarchy layout correction and verification method and apparatus |
US7093229B2 (en) * | 1997-09-17 | 2006-08-15 | Synopsys, Inc. | System and method for providing defect printability analysis of photolithographic masks with job-based automation |
US6470489B1 (en) * | 1997-09-17 | 2002-10-22 | Numerical Technologies, Inc. | Design rule checking system and method |
US7617474B2 (en) * | 1997-09-17 | 2009-11-10 | Synopsys, Inc. | System and method for providing defect printability analysis of photolithographic masks with job-based automation |
US6243855B1 (en) * | 1997-09-30 | 2001-06-05 | Kabushiki Kaisha Toshiba | Mask data design method |
US6723233B1 (en) * | 1999-09-10 | 2004-04-20 | Ronald L. Barnes | Ozone generator retrofit apparatus for jetted tubs and spas |
US6178360B1 (en) * | 1998-02-05 | 2001-01-23 | Micron Technology, Inc. | Methods and apparatus for determining optimum exposure threshold for a given photolithographic model |
US6091845A (en) * | 1998-02-24 | 2000-07-18 | Micron Technology, Inc. | Inspection technique of photomask |
SE9800665D0 (sv) * | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
US6816302B2 (en) * | 1998-03-02 | 2004-11-09 | Micronic Laser Systems Ab | Pattern generator |
US6175953B1 (en) * | 1998-03-03 | 2001-01-16 | Lsi Logic Corporation | Method and apparatus for general systematic application of proximity correction |
JPH11329932A (ja) * | 1998-05-14 | 1999-11-30 | Toppan Printing Co Ltd | 光強度シミュレーション装置および光強度シミュレーション方法並びに光強度シミュレーションプログラムを記録した記録媒体 |
US6226781B1 (en) * | 1998-08-12 | 2001-05-01 | Advanced Micro Devices, Inc. | Modifying a design layer of an integrated circuit using overlying and underlying design layers |
JP2000066365A (ja) * | 1998-08-18 | 2000-03-03 | Toppan Printing Co Ltd | フォトマスクパターン設計支援装置、フォトマスクパターン設計支援方法、および、フォトマスクパターン設計支援プログラムを記録した記録媒体 |
US9195784B2 (en) * | 1998-08-31 | 2015-11-24 | Cadence Design Systems, Inc. | Common shared memory in a verification system |
US6223139B1 (en) * | 1998-09-15 | 2001-04-24 | International Business Machines Corporation | Kernel-based fast aerial image computation for a large scale design of integrated circuit patterns |
JP2000105452A (ja) * | 1998-09-29 | 2000-04-11 | Toppan Printing Co Ltd | データ変換装置及びデータ変換方法 |
US6120952A (en) * | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
US6263299B1 (en) * | 1999-01-19 | 2001-07-17 | Lsi Logic Corporation | Geometric aerial image simulation |
US6171731B1 (en) * | 1999-01-20 | 2001-01-09 | Lsi Logic Corporation | Hybrid aerial image simulation |
JP4158266B2 (ja) * | 1999-03-11 | 2008-10-01 | 凸版印刷株式会社 | フォトマスク外観検査装置 |
WO2000068782A1 (fr) | 1999-05-06 | 2000-11-16 | Hitachi, Ltd. | Procede de mise au point d'un circuit integre a semiconducteur |
AU5261200A (en) | 1999-05-20 | 2000-12-12 | Micronic Laser Systems Ab | A method for error reduction in lithography |
US6407736B1 (en) * | 1999-06-18 | 2002-06-18 | Interval Research Corporation | Deferred scanline conversion architecture |
US6335151B1 (en) * | 1999-06-18 | 2002-01-01 | International Business Machines Corporation | Micro-surface fabrication process |
JP2001084369A (ja) * | 1999-09-17 | 2001-03-30 | Hitachi Ltd | 画像処理装置 |
US6449749B1 (en) * | 1999-11-18 | 2002-09-10 | Pdf Solutions, Inc. | System and method for product yield prediction |
US6826542B1 (en) * | 1999-11-23 | 2004-11-30 | Ipayables, Inc. | System and method for collecting, enhancing and distributing invoices electronically via the internet |
US6562638B1 (en) * | 1999-12-30 | 2003-05-13 | Cypress Semiconductor Corp. | Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout |
US6760473B1 (en) * | 2000-07-12 | 2004-07-06 | Kla-Tencor Technologies Corporation | Optical proximity correction serif measurement technique |
US6539331B1 (en) * | 2000-09-08 | 2003-03-25 | Peter J. Fiekowsky | Microscopic feature dimension measurement system |
US6785651B1 (en) * | 2000-09-14 | 2004-08-31 | Microsoft Corporation | Method and apparatus for performing plan-based dialog |
US6372391B1 (en) * | 2000-09-25 | 2002-04-16 | The University Of Houston | Template mask lithography utilizing structured beam |
US6453457B1 (en) * | 2000-09-29 | 2002-09-17 | Numerical Technologies, Inc. | Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout |
JP3910359B2 (ja) * | 2000-11-24 | 2007-04-25 | 株式会社小糸製作所 | 車輌用灯具 |
GB0031646D0 (en) * | 2000-12-22 | 2001-02-07 | European Community | Method and apparatus for crack and fracture detection utilizing bragg gratings |
US20030037321A1 (en) * | 2001-01-29 | 2003-02-20 | Matt Bowen | System, method and article of manufacture for extensions in a programming lanauage capable of programming hardware architectures |
US7072502B2 (en) * | 2001-06-07 | 2006-07-04 | Applied Materials, Inc. | Alternating phase-shift mask inspection method and apparatus |
JP3600849B2 (ja) * | 2001-06-11 | 2004-12-15 | 理学電機工業株式会社 | ホウ素蛍光x線分析用多層膜分光素子 |
US7034963B2 (en) * | 2001-07-11 | 2006-04-25 | Applied Materials, Inc. | Method for adjusting edges of grayscale pixel-map images |
US7302111B2 (en) * | 2001-09-12 | 2007-11-27 | Micronic Laser Systems A.B. | Graphics engine for high precision lithography |
JP4092631B2 (ja) * | 2001-09-20 | 2008-05-28 | トヨタ自動車株式会社 | 非水電解質二次電池 |
US20030233630A1 (en) * | 2001-12-14 | 2003-12-18 | Torbjorn Sandstrom | Methods and systems for process control of corner feature embellishment |
US7106490B2 (en) * | 2001-12-14 | 2006-09-12 | Micronic Laser Systems Ab | Methods and systems for improved boundary contrast |
US6691052B1 (en) * | 2002-01-30 | 2004-02-10 | Kla-Tencor Corporation | Apparatus and methods for generating an inspection reference pattern |
US7293249B2 (en) * | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
JP2003280964A (ja) * | 2002-03-22 | 2003-10-03 | Hitachi Ltd | スナップショット取得方法、ストレージシステム及びディスク装置 |
CN1653488A (zh) * | 2002-05-10 | 2005-08-10 | 比特波伊斯有限责任公司 | 显示驱动器ic、显示模块以及合并有图形引擎的电子装置 |
US6828542B2 (en) * | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
US7302672B2 (en) * | 2002-07-12 | 2007-11-27 | Cadence Design Systems, Inc. | Method and system for context-specific mask writing |
US6893800B2 (en) * | 2002-09-24 | 2005-05-17 | Agere Systems, Inc. | Substrate topography compensation at mask design: 3D OPC topography anchored |
US20040083475A1 (en) * | 2002-10-25 | 2004-04-29 | Mentor Graphics Corp. | Distribution of operations to remote computers |
US6854104B2 (en) * | 2002-11-27 | 2005-02-08 | Lsi Logic Corporation | First approximation for OPC significant speed-up |
US7171047B2 (en) * | 2002-12-20 | 2007-01-30 | Lsi Logic Corporation | Adaptive Sem edge recognition algorithm |
US6736370B1 (en) | 2002-12-20 | 2004-05-18 | Applied Materials, Inc. | Diaphragm valve with dynamic metal seat and coned disk springs |
US6828068B2 (en) * | 2003-01-23 | 2004-12-07 | Photronics, Inc. | Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same |
US6996790B2 (en) * | 2003-01-30 | 2006-02-07 | Synopsys, Inc. | System and method for generating a two-dimensional yield map for a full layout |
US6765651B1 (en) * | 2003-03-11 | 2004-07-20 | Peter J. Fiekowsky | Fast image simulation for photolithography |
US7187811B2 (en) * | 2003-03-18 | 2007-03-06 | Advanced & Wise Technology Corp. | Method for image resolution enhancement |
US7053355B2 (en) * | 2003-03-18 | 2006-05-30 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
US20040225488A1 (en) * | 2003-05-05 | 2004-11-11 | Wen-Chuan Wang | System and method for examining mask pattern fidelity |
US7003758B2 (en) * | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
EP1719018A1 (en) * | 2004-02-25 | 2006-11-08 | Micronic Laser Systems Ab | Methods for exposing patterns and emulating masks in optical maskless lithography |
US20070233805A1 (en) * | 2006-04-02 | 2007-10-04 | Mentor Graphics Corp. | Distribution of parallel operations |
JP2010500692A (ja) | 2006-08-13 | 2010-01-07 | メンター・グラフィクス・コーポレーション | 階層的プロセッサ構成によるマルチプロセッサアーキテクチャ |
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US7120895B2 (en) | 2006-10-10 |
US20050076322A1 (en) | 2005-04-07 |
US20050122500A1 (en) | 2005-06-09 |
US20050166174A1 (en) | 2005-07-28 |
US8209640B2 (en) | 2012-06-26 |
JP2009105430A (ja) | 2009-05-14 |
JP2010266900A (ja) | 2010-11-25 |
US20130332894A1 (en) | 2013-12-12 |
JP2007507891A (ja) | 2007-03-29 |
US8516405B2 (en) | 2013-08-20 |
US8893067B2 (en) | 2014-11-18 |
US7873937B2 (en) | 2011-01-18 |
US7117478B2 (en) | 2006-10-03 |
US7003758B2 (en) | 2006-02-21 |
US20050097500A1 (en) | 2005-05-05 |
WO2005040917A2 (en) | 2005-05-06 |
US20110083113A1 (en) | 2011-04-07 |
US7114145B2 (en) | 2006-09-26 |
US20120269421A1 (en) | 2012-10-25 |
US7111277B2 (en) | 2006-09-19 |
US7117477B2 (en) | 2006-10-03 |
US20070022402A1 (en) | 2007-01-25 |
US20050091633A1 (en) | 2005-04-28 |
US20050120327A1 (en) | 2005-06-02 |
WO2005040917A3 (en) | 2006-02-23 |
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