JP4986406B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4986406B2
JP4986406B2 JP2005105163A JP2005105163A JP4986406B2 JP 4986406 B2 JP4986406 B2 JP 4986406B2 JP 2005105163 A JP2005105163 A JP 2005105163A JP 2005105163 A JP2005105163 A JP 2005105163A JP 4986406 B2 JP4986406 B2 JP 4986406B2
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Japan
Prior art keywords
layer
gan
semiconductor layer
substrate
based semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2005105163A
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English (en)
Japanese (ja)
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JP2006286954A5 (enExample
JP2006286954A (ja
Inventor
誠司 八重樫
健 川崎
健 中田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2005105163A priority Critical patent/JP4986406B2/ja
Priority to US11/392,549 priority patent/US7728353B2/en
Publication of JP2006286954A publication Critical patent/JP2006286954A/ja
Publication of JP2006286954A5 publication Critical patent/JP2006286954A5/ja
Application granted granted Critical
Publication of JP4986406B2 publication Critical patent/JP4986406B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2005105163A 2005-03-31 2005-03-31 半導体装置の製造方法 Expired - Fee Related JP4986406B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005105163A JP4986406B2 (ja) 2005-03-31 2005-03-31 半導体装置の製造方法
US11/392,549 US7728353B2 (en) 2005-03-31 2006-03-30 Semiconductor device in which GaN-based semiconductor layer is selectively formed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005105163A JP4986406B2 (ja) 2005-03-31 2005-03-31 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006286954A JP2006286954A (ja) 2006-10-19
JP2006286954A5 JP2006286954A5 (enExample) 2008-05-08
JP4986406B2 true JP4986406B2 (ja) 2012-07-25

Family

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Family Applications (1)

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JP2005105163A Expired - Fee Related JP4986406B2 (ja) 2005-03-31 2005-03-31 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US7728353B2 (enExample)
JP (1) JP4986406B2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
CN100530705C (zh) 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
WO2004068567A1 (de) * 2003-01-31 2004-08-12 Osram Opto Semiconductors Gmbh Dünnfilmhalbleiterbauelement und verfahren zu dessen herstellung
JP5051980B2 (ja) * 2005-03-31 2012-10-17 住友電工デバイス・イノベーション株式会社 半導体装置
WO2007044727A2 (en) * 2005-10-07 2007-04-19 California Institute Of Technology Pkr activation via hybridization chain reaction
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法
JP5134797B2 (ja) * 2006-09-13 2013-01-30 ローム株式会社 ＧａＮ系半導体素子及びその製造方法並びにＧａＮ系半導体装置
US8421119B2 (en) * 2006-09-13 2013-04-16 Rohm Co., Ltd. GaN related compound semiconductor element and process for producing the same and device having the same
JP4999065B2 (ja) * 2006-11-09 2012-08-15 古河電気工業株式会社 パワー半導体素子
JP5189771B2 (ja) * 2007-02-01 2013-04-24 ローム株式会社 ＧａＮ系半導体素子
WO2008099843A1 (ja) * 2007-02-14 2008-08-21 Rohm Co., Ltd. 窒化物半導体素子および窒化物半導体素子の製造方法
JP2008205199A (ja) * 2007-02-20 2008-09-04 Rohm Co Ltd ＧａＮ系半導体素子の製造方法
JP2008226914A (ja) * 2007-03-08 2008-09-25 Rohm Co Ltd ＧａＮ系半導体素子
JP2008227073A (ja) * 2007-03-12 2008-09-25 Rohm Co Ltd 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法
JP5252813B2 (ja) * 2007-03-15 2013-07-31 株式会社豊田中央研究所 半導体装置の製造方法
FR2924270B1 (fr) * 2007-11-27 2010-08-27 Picogiga Internat Procede de fabrication d'un dispositif electronique
US9048302B2 (en) * 2008-01-11 2015-06-02 The Furukawa Electric Co., Ltd Field effect transistor having semiconductor operating layer formed with an inclined side wall
WO2010117987A1 (en) * 2009-04-08 2010-10-14 Efficient Power Conversion Corporation Bumped, self-isolated gan transistor chip with electrically isolated back surface
JP5531538B2 (ja) * 2009-09-30 2014-06-25 住友電気工業株式会社 ヘテロ接合トランジスタ、及びヘテロ接合トランジスタを作製する方法
JP2011210780A (ja) * 2010-03-29 2011-10-20 Oki Electric Industry Co Ltd ＧａＮ−ＭＩＳトランジスタ、ＧａＮ−ＩＧＢＴ、およびこれらの製造方法
JP2012160746A (ja) * 2012-03-26 2012-08-23 Furukawa Electric Co Ltd:The パワー半導体素子
JP6170300B2 (ja) * 2013-01-08 2017-07-26 住友化学株式会社 窒化物半導体デバイス
US9865725B2 (en) * 2015-04-14 2018-01-09 Hrl Laboratories, Llc III-nitride transistor with trench gate
JP6755892B2 (ja) * 2016-02-08 2020-09-16 パナソニック株式会社 半導体装置
EP4411843A3 (en) 2017-05-05 2024-10-30 The Regents of the University of California Method of removing a substrate
DE102021204293A1 (de) * 2021-04-29 2022-11-03 Robert Bosch Gesellschaft mit beschränkter Haftung Vertikaler transistor und verfahren zum herstellen desselben
WO2023162521A1 (ja) * 2022-02-22 2023-08-31 ローム株式会社 窒化物半導体装置およびその製造方法
US12471340B2 (en) * 2022-10-27 2025-11-11 Panjit International Inc. Manufacturing method of forming semiconductor device and semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647516A (en) * 1987-03-27 1989-01-11 Canon Kk Manufacture of compound semiconductor and semiconductor device using thereof
JPH0492439A (ja) * 1990-08-08 1992-03-25 Hitachi Ltd 半導体集積回路装置の製造方法
US5557115A (en) * 1994-08-11 1996-09-17 Rohm Co. Ltd. Light emitting semiconductor device with sub-mount
JPH10223901A (ja) * 1996-12-04 1998-08-21 Sony Corp 電界効果型トランジスタおよびその製造方法
JP3577880B2 (ja) * 1997-03-26 2004-10-20 住友化学工業株式会社 ３−５族化合物半導体の製造方法
JP3876518B2 (ja) 1998-03-05 2007-01-31 日亜化学工業株式会社 窒化物半導体基板の製造方法および窒化物半導体基板
JP2000349338A (ja) 1998-09-30 2000-12-15 Nec Corp ＧａＮ結晶膜、ＩＩＩ族元素窒化物半導体ウェーハ及びその製造方法
JP2000208760A (ja) * 1999-01-13 2000-07-28 Furukawa Electric Co Ltd:The 電界効果トランジスタ
JP4667556B2 (ja) * 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
JP3966763B2 (ja) * 2001-06-01 2007-08-29 古河電気工業株式会社 ＧａＮ系半導体装置
JP3815335B2 (ja) * 2002-01-18 2006-08-30 ソニー株式会社 半導体発光素子及びその製造方法
JP4865189B2 (ja) * 2002-02-21 2012-02-01 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP2003257997A (ja) * 2002-02-28 2003-09-12 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体装置を製造する方法
JP2003347315A (ja) * 2002-05-23 2003-12-05 Sharp Corp 半導体装置およびその製造方法、電力増幅器、並びに、無線通信システム
US6830945B2 (en) * 2002-09-16 2004-12-14 Hrl Laboratories, Llc Method for fabricating a non-planar nitride-based heterostructure field effect transistor
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
JP2005005657A (ja) * 2003-06-09 2005-01-06 Sc Technology Kk 電界効果トランジスタの結晶層構造
DE102004058431B4 (de) * 2003-12-05 2021-02-18 Infineon Technologies Americas Corp. III-Nitrid Halbleitervorrichtung mit Grabenstruktur
US7382001B2 (en) * 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
JP4447413B2 (ja) * 2004-09-10 2010-04-07 株式会社神戸製鋼所 半導体素子の製造方法

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JP2006286954A (ja) 2006-10-19
US7728353B2 (en) 2010-06-01

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