JP4955902B2 - フラッシュメモリセルの製造補法 - Google Patents

フラッシュメモリセルの製造補法 Download PDF

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Publication number
JP4955902B2
JP4955902B2 JP2002540201A JP2002540201A JP4955902B2 JP 4955902 B2 JP4955902 B2 JP 4955902B2 JP 2002540201 A JP2002540201 A JP 2002540201A JP 2002540201 A JP2002540201 A JP 2002540201A JP 4955902 B2 JP4955902 B2 JP 4955902B2
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Japan
Prior art keywords
flash memory
substrate
memory cell
source
atoms
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JP2002540201A
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Japanese (ja)
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JP2004519092A (ja
JP2004519092A5 (https=
Inventor
ホー，ユエ−ソン
ハダド，サミール
トゥールゲート，ティモシー
チャン，チー
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スパンション エルエルシー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2002540201A 2000-10-30 2001-08-06 フラッシュメモリセルの製造補法 Expired - Fee Related JP4955902B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/699,972 2000-10-30
US09/699,972 US6524914B1 (en) 2000-10-30 2000-10-30 Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory
PCT/US2001/024677 WO2002037550A1 (en) 2000-10-30 2001-08-06 Non-volatile memory with source side boron implantation

Publications (3)

Publication Number Publication Date
JP2004519092A JP2004519092A (ja) 2004-06-24
JP2004519092A5 JP2004519092A5 (https=) 2005-04-07
JP4955902B2 true JP4955902B2 (ja) 2012-06-20

Family

ID=24811695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002540201A Expired - Fee Related JP4955902B2 (ja) 2000-10-30 2001-08-06 フラッシュメモリセルの製造補法

Country Status (8)

Country Link
US (1) US6524914B1 (https=)
EP (1) EP1330840A1 (https=)
JP (1) JP4955902B2 (https=)
KR (1) KR100810709B1 (https=)
CN (1) CN1222987C (https=)
AU (1) AU2001281125A1 (https=)
TW (1) TW556325B (https=)
WO (1) WO2002037550A1 (https=)

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WO2001047012A1 (en) * 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
US6653189B1 (en) * 2000-10-30 2003-11-25 Advanced Micro Devices, Inc. Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory
US6489253B1 (en) * 2001-02-16 2002-12-03 Advanced Micro Devices, Inc. Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
DE10148491B4 (de) * 2001-10-01 2006-09-07 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten Halbleiteranordnung mit Hilfe einer thermischen Oxidation und Halbleiteranordnung
US7074682B2 (en) * 2003-10-01 2006-07-11 Dongbuanam Semiconductor Inc. Method for fabricating a semiconductor device having self aligned source (SAS) crossing trench
KR100567757B1 (ko) * 2003-12-30 2006-04-05 동부아남반도체 주식회사 반도체 소자의 제조 방법
US6875648B1 (en) * 2004-07-09 2005-04-05 Atmel Corporation Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions
KR100707200B1 (ko) * 2005-07-22 2007-04-13 삼성전자주식회사 핀-타입 채널 영역을 갖는 비휘발성 메모리 소자 및 그제조 방법
US7332769B2 (en) * 2005-08-17 2008-02-19 Gregorio Spadea Non-volatile memory arrangement having nanocrystals
WO2009022741A1 (ja) * 2007-08-16 2009-02-19 Nec Corporation 不揮発性半導体メモリ装置
CN106024900A (zh) * 2016-07-22 2016-10-12 上海华力微电子有限公司 改善栅极诱导漏极漏电的方法以及非均匀沟道掺杂器件
CN106206748B (zh) * 2016-08-29 2020-02-07 上海华虹宏力半导体制造有限公司 Sonos器件及其制造方法

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JPS6225451A (ja) * 1985-07-25 1987-02-03 Toshiba Corp 相補型半導体装置の製造方法
JP2585262B2 (ja) * 1987-04-24 1997-02-26 シチズン時計株式会社 半導体不揮発性メモリ
KR940010930B1 (ko) * 1990-03-13 1994-11-19 가부시키가이샤 도시바 반도체장치의 제조방법
US5276344A (en) 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
JP2817393B2 (ja) * 1990-11-14 1998-10-30 日本電気株式会社 半導体記憶装置の製造方法
JPH05110114A (ja) 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
JPH05283710A (ja) 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
US5592003A (en) 1992-12-28 1997-01-07 Nippon Steel Corporation Nonvolatile semiconductor memory and method of rewriting data thereto
JP3288099B2 (ja) * 1992-12-28 2002-06-04 新日本製鐵株式会社 不揮発性半導体記憶装置及びその書き換え方法
JPH06291330A (ja) 1993-03-31 1994-10-18 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
DE69413960T2 (de) 1994-07-18 1999-04-01 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung
US5429970A (en) 1994-07-18 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory cell
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
US6034896A (en) 1995-07-03 2000-03-07 The University Of Toronto, Innovations Foundation Method of fabricating a fast programmable flash E2 PROM cell
JP2956549B2 (ja) 1995-09-14 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法とデータ消去方法
JPH0997884A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
US5882970A (en) * 1995-11-03 1999-03-16 United Microelectronics Corporation Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
JPH09148542A (ja) * 1995-11-17 1997-06-06 Sharp Corp 半導体記憶装置及びその製造方法
US5589413A (en) 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication
JP3070466B2 (ja) * 1996-01-19 2000-07-31 日本電気株式会社 半導体不揮発性記憶装置
US5854108A (en) * 1996-06-04 1998-12-29 Advanced Micro Devices, Inc. Method and system for providing a double diffuse implant junction in a flash device
KR100238199B1 (ko) * 1996-07-30 2000-01-15 윤종용 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법
TW317653B (en) * 1996-12-27 1997-10-11 United Microelectronics Corp Manufacturing method of memory cell of flash memory
TW400641B (en) * 1997-03-13 2000-08-01 United Microelectronics Corp The manufacture method of flash memory unit
US5888870A (en) 1997-10-22 1999-03-30 Advanced Micro Devices, Inc. Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate
US5933729A (en) 1997-12-08 1999-08-03 Advanced Micro Devices, Inc. Reduction of ONO fence during self-aligned etch to eliminate poly stringers
US6103602A (en) * 1997-12-17 2000-08-15 Advanced Micro Devices, Inc. Method and system for providing a drain side pocket implant
TW407348B (en) 1999-02-03 2000-10-01 United Microelectronics Corp Manufacture of the flash memory
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics

Also Published As

Publication number Publication date
US6524914B1 (en) 2003-02-25
JP2004519092A (ja) 2004-06-24
WO2002037550A1 (en) 2002-05-10
CN1471728A (zh) 2004-01-28
EP1330840A1 (en) 2003-07-30
CN1222987C (zh) 2005-10-12
KR100810709B1 (ko) 2008-03-07
KR20030061383A (ko) 2003-07-18
AU2001281125A1 (en) 2002-05-15
TW556325B (en) 2003-10-01

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