CN1222987C - 源极侧硼注入的非易失存储器 - Google Patents

源极侧硼注入的非易失存储器 Download PDF

Info

Publication number
CN1222987C
CN1222987C CNB018178529A CN01817852A CN1222987C CN 1222987 C CN1222987 C CN 1222987C CN B018178529 A CNB018178529 A CN B018178529A CN 01817852 A CN01817852 A CN 01817852A CN 1222987 C CN1222987 C CN 1222987C
Authority
CN
China
Prior art keywords
substrate
flash memory
source
oxide
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018178529A
Other languages
English (en)
Chinese (zh)
Other versions
CN1471728A (zh
Inventor
何月松
S·哈达
T·什盖特
张稷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cypress Semiconductor Corp
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1471728A publication Critical patent/CN1471728A/zh
Application granted granted Critical
Publication of CN1222987C publication Critical patent/CN1222987C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CNB018178529A 2000-10-30 2001-08-06 源极侧硼注入的非易失存储器 Expired - Fee Related CN1222987C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/699,972 2000-10-30
US09/699,972 US6524914B1 (en) 2000-10-30 2000-10-30 Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory

Publications (2)

Publication Number Publication Date
CN1471728A CN1471728A (zh) 2004-01-28
CN1222987C true CN1222987C (zh) 2005-10-12

Family

ID=24811695

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018178529A Expired - Fee Related CN1222987C (zh) 2000-10-30 2001-08-06 源极侧硼注入的非易失存储器

Country Status (8)

Country Link
US (1) US6524914B1 (https=)
EP (1) EP1330840A1 (https=)
JP (1) JP4955902B2 (https=)
KR (1) KR100810709B1 (https=)
CN (1) CN1222987C (https=)
AU (1) AU2001281125A1 (https=)
TW (1) TW556325B (https=)
WO (1) WO2002037550A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001047012A1 (en) * 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
US6653189B1 (en) * 2000-10-30 2003-11-25 Advanced Micro Devices, Inc. Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory
US6489253B1 (en) * 2001-02-16 2002-12-03 Advanced Micro Devices, Inc. Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
DE10148491B4 (de) * 2001-10-01 2006-09-07 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten Halbleiteranordnung mit Hilfe einer thermischen Oxidation und Halbleiteranordnung
US7074682B2 (en) * 2003-10-01 2006-07-11 Dongbuanam Semiconductor Inc. Method for fabricating a semiconductor device having self aligned source (SAS) crossing trench
KR100567757B1 (ko) * 2003-12-30 2006-04-05 동부아남반도체 주식회사 반도체 소자의 제조 방법
US6875648B1 (en) * 2004-07-09 2005-04-05 Atmel Corporation Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions
KR100707200B1 (ko) * 2005-07-22 2007-04-13 삼성전자주식회사 핀-타입 채널 영역을 갖는 비휘발성 메모리 소자 및 그제조 방법
US7332769B2 (en) * 2005-08-17 2008-02-19 Gregorio Spadea Non-volatile memory arrangement having nanocrystals
WO2009022741A1 (ja) * 2007-08-16 2009-02-19 Nec Corporation 不揮発性半導体メモリ装置
CN106024900A (zh) * 2016-07-22 2016-10-12 上海华力微电子有限公司 改善栅极诱导漏极漏电的方法以及非均匀沟道掺杂器件
CN106206748B (zh) * 2016-08-29 2020-02-07 上海华虹宏力半导体制造有限公司 Sonos器件及其制造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225451A (ja) * 1985-07-25 1987-02-03 Toshiba Corp 相補型半導体装置の製造方法
JP2585262B2 (ja) * 1987-04-24 1997-02-26 シチズン時計株式会社 半導体不揮発性メモリ
KR940010930B1 (ko) * 1990-03-13 1994-11-19 가부시키가이샤 도시바 반도체장치의 제조방법
US5276344A (en) 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
JP2817393B2 (ja) * 1990-11-14 1998-10-30 日本電気株式会社 半導体記憶装置の製造方法
JPH05110114A (ja) 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
JPH05283710A (ja) 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
US5592003A (en) 1992-12-28 1997-01-07 Nippon Steel Corporation Nonvolatile semiconductor memory and method of rewriting data thereto
JP3288099B2 (ja) * 1992-12-28 2002-06-04 新日本製鐵株式会社 不揮発性半導体記憶装置及びその書き換え方法
JPH06291330A (ja) 1993-03-31 1994-10-18 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
DE69413960T2 (de) 1994-07-18 1999-04-01 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung
US5429970A (en) 1994-07-18 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory cell
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
US6034896A (en) 1995-07-03 2000-03-07 The University Of Toronto, Innovations Foundation Method of fabricating a fast programmable flash E2 PROM cell
JP2956549B2 (ja) 1995-09-14 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法とデータ消去方法
JPH0997884A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
US5882970A (en) * 1995-11-03 1999-03-16 United Microelectronics Corporation Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
JPH09148542A (ja) * 1995-11-17 1997-06-06 Sharp Corp 半導体記憶装置及びその製造方法
US5589413A (en) 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication
JP3070466B2 (ja) * 1996-01-19 2000-07-31 日本電気株式会社 半導体不揮発性記憶装置
US5854108A (en) * 1996-06-04 1998-12-29 Advanced Micro Devices, Inc. Method and system for providing a double diffuse implant junction in a flash device
KR100238199B1 (ko) * 1996-07-30 2000-01-15 윤종용 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법
TW317653B (en) * 1996-12-27 1997-10-11 United Microelectronics Corp Manufacturing method of memory cell of flash memory
TW400641B (en) * 1997-03-13 2000-08-01 United Microelectronics Corp The manufacture method of flash memory unit
US5888870A (en) 1997-10-22 1999-03-30 Advanced Micro Devices, Inc. Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate
US5933729A (en) 1997-12-08 1999-08-03 Advanced Micro Devices, Inc. Reduction of ONO fence during self-aligned etch to eliminate poly stringers
US6103602A (en) * 1997-12-17 2000-08-15 Advanced Micro Devices, Inc. Method and system for providing a drain side pocket implant
TW407348B (en) 1999-02-03 2000-10-01 United Microelectronics Corp Manufacture of the flash memory
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics

Also Published As

Publication number Publication date
US6524914B1 (en) 2003-02-25
JP2004519092A (ja) 2004-06-24
WO2002037550A1 (en) 2002-05-10
CN1471728A (zh) 2004-01-28
JP4955902B2 (ja) 2012-06-20
EP1330840A1 (en) 2003-07-30
KR100810709B1 (ko) 2008-03-07
KR20030061383A (ko) 2003-07-18
AU2001281125A1 (en) 2002-05-15
TW556325B (en) 2003-10-01

Similar Documents

Publication Publication Date Title
US6074917A (en) LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices
US6436768B1 (en) Source drain implant during ONO formation for improved isolation of SONOS devices
CN1222987C (zh) 源极侧硼注入的非易失存储器
CN1117398C (zh) 三层多晶硅嵌入式非易失性存储器单元及其制造方法
US6465303B1 (en) Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory
US6025229A (en) Method of fabricating split-gate source side injection flash memory array
US20020106852A1 (en) Lowered channel doping with source side boron implant for deep sub 0.18 micron flash memory cell
CN1293617C (zh) 对于深次0.18微米闪存的源极侧硼注入及漏极侧mdd注入
CN100446221C (zh) 制造限制性电荷存储器的方法
KR100806787B1 (ko) 플래쉬 반도체 소자의 제조방법
US7060627B2 (en) Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays
US7232724B1 (en) Radical oxidation for bitline oxide of SONOS
US20070128798A1 (en) Nonvolatile memory device and method for fabricating the same
US6927150B2 (en) Method of manufacturing a semiconductor device
US6716701B1 (en) Method of manufacturing a semiconductor memory device
KR100458595B1 (ko) 비휘발성 메모리 장치 및 그 제조 방법
US6184084B1 (en) Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it
KR100472008B1 (ko) 비휘발성 메모리 장치 및 그 제조 방법
KR100472009B1 (ko) 비휘발성 메모리 장치 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SPANSION CO., LTD.

Free format text: FORMER OWNER: SPANSION CO.,LTD.

Effective date: 20070420

Owner name: SPANSION CO.,LTD.

Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC.

Effective date: 20070420

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20070420

Address after: California, USA

Patentee after: SPANSION LLC

Address before: California, USA

Patentee before: Spanson Co.

Effective date of registration: 20070420

Address after: California, USA

Patentee after: Spanson Co.

Address before: California, USA

Patentee before: ADVANCED MICRO DEVICES, Inc.

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160317

Address after: California, USA

Patentee after: CYPRESS SEMICONDUCTOR Corp.

Address before: California, USA

Patentee before: SPANSION LLC

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20051012

Termination date: 20170806

CF01 Termination of patent right due to non-payment of annual fee