AU2001281125A1 - Non-volatile memory with source side boron implantation - Google Patents

Non-volatile memory with source side boron implantation

Info

Publication number
AU2001281125A1
AU2001281125A1 AU2001281125A AU8112501A AU2001281125A1 AU 2001281125 A1 AU2001281125 A1 AU 2001281125A1 AU 2001281125 A AU2001281125 A AU 2001281125A AU 8112501 A AU8112501 A AU 8112501A AU 2001281125 A1 AU2001281125 A1 AU 2001281125A1
Authority
AU
Australia
Prior art keywords
volatile memory
source side
boron implantation
side boron
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281125A
Other languages
English (en)
Inventor
Chi Chang
Sameer Haddad
Yue-Song He
Timothy Thurgate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001281125A1 publication Critical patent/AU2001281125A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
AU2001281125A 2000-10-30 2001-08-06 Non-volatile memory with source side boron implantation Abandoned AU2001281125A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/699,972 US6524914B1 (en) 2000-10-30 2000-10-30 Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory
US09699972 2000-10-30
PCT/US2001/024677 WO2002037550A1 (en) 2000-10-30 2001-08-06 Non-volatile memory with source side boron implantation

Publications (1)

Publication Number Publication Date
AU2001281125A1 true AU2001281125A1 (en) 2002-05-15

Family

ID=24811695

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281125A Abandoned AU2001281125A1 (en) 2000-10-30 2001-08-06 Non-volatile memory with source side boron implantation

Country Status (8)

Country Link
US (1) US6524914B1 (https=)
EP (1) EP1330840A1 (https=)
JP (1) JP4955902B2 (https=)
KR (1) KR100810709B1 (https=)
CN (1) CN1222987C (https=)
AU (1) AU2001281125A1 (https=)
TW (1) TW556325B (https=)
WO (1) WO2002037550A1 (https=)

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WO2001047012A1 (en) * 1999-12-21 2001-06-28 Koninklijke Philips Electronics N.V. Non-volatile memory cells and periphery
US6653189B1 (en) * 2000-10-30 2003-11-25 Advanced Micro Devices, Inc. Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory
US6489253B1 (en) * 2001-02-16 2002-12-03 Advanced Micro Devices, Inc. Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
DE10148491B4 (de) * 2001-10-01 2006-09-07 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten Halbleiteranordnung mit Hilfe einer thermischen Oxidation und Halbleiteranordnung
US7074682B2 (en) * 2003-10-01 2006-07-11 Dongbuanam Semiconductor Inc. Method for fabricating a semiconductor device having self aligned source (SAS) crossing trench
KR100567757B1 (ko) * 2003-12-30 2006-04-05 동부아남반도체 주식회사 반도체 소자의 제조 방법
US6875648B1 (en) * 2004-07-09 2005-04-05 Atmel Corporation Fabrication of an EEPROM cell with emitter-polysilicon source/drain regions
KR100707200B1 (ko) * 2005-07-22 2007-04-13 삼성전자주식회사 핀-타입 채널 영역을 갖는 비휘발성 메모리 소자 및 그제조 방법
US7332769B2 (en) * 2005-08-17 2008-02-19 Gregorio Spadea Non-volatile memory arrangement having nanocrystals
WO2009022741A1 (ja) * 2007-08-16 2009-02-19 Nec Corporation 不揮発性半導体メモリ装置
CN106024900A (zh) * 2016-07-22 2016-10-12 上海华力微电子有限公司 改善栅极诱导漏极漏电的方法以及非均匀沟道掺杂器件
CN106206748B (zh) * 2016-08-29 2020-02-07 上海华虹宏力半导体制造有限公司 Sonos器件及其制造方法

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JPS6225451A (ja) * 1985-07-25 1987-02-03 Toshiba Corp 相補型半導体装置の製造方法
JP2585262B2 (ja) * 1987-04-24 1997-02-26 シチズン時計株式会社 半導体不揮発性メモリ
KR940010930B1 (ko) * 1990-03-13 1994-11-19 가부시키가이샤 도시바 반도체장치의 제조방법
US5276344A (en) 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
JP2817393B2 (ja) * 1990-11-14 1998-10-30 日本電気株式会社 半導体記憶装置の製造方法
JPH05110114A (ja) 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
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JPH0685278A (ja) * 1992-09-07 1994-03-25 Hitachi Ltd 半導体装置の製造方法
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JP3288099B2 (ja) * 1992-12-28 2002-06-04 新日本製鐵株式会社 不揮発性半導体記憶装置及びその書き換え方法
JPH06291330A (ja) 1993-03-31 1994-10-18 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
JPH06296029A (ja) * 1993-04-08 1994-10-21 Citizen Watch Co Ltd 半導体不揮発性記憶素子とその製造方法
DE69413960T2 (de) 1994-07-18 1999-04-01 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Nicht-flüchtiger EPROM und Flash-EEPROM-Speicher und Verfahren zu seiner Herstellung
US5429970A (en) 1994-07-18 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory cell
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
US6034896A (en) 1995-07-03 2000-03-07 The University Of Toronto, Innovations Foundation Method of fabricating a fast programmable flash E2 PROM cell
JP2956549B2 (ja) 1995-09-14 1999-10-04 日本電気株式会社 半導体記憶装置及びその製造方法とデータ消去方法
JPH0997884A (ja) * 1995-10-02 1997-04-08 Toshiba Corp 不揮発性半導体記憶装置
US5882970A (en) * 1995-11-03 1999-03-16 United Microelectronics Corporation Method for fabricating flash memory cell having a decreased overlapped region between its source and gate
JPH09148542A (ja) * 1995-11-17 1997-06-06 Sharp Corp 半導体記憶装置及びその製造方法
US5589413A (en) 1995-11-27 1996-12-31 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned bit-line during EPROM fabrication
JP3070466B2 (ja) * 1996-01-19 2000-07-31 日本電気株式会社 半導体不揮発性記憶装置
US5854108A (en) * 1996-06-04 1998-12-29 Advanced Micro Devices, Inc. Method and system for providing a double diffuse implant junction in a flash device
KR100238199B1 (ko) * 1996-07-30 2000-01-15 윤종용 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법
TW317653B (en) * 1996-12-27 1997-10-11 United Microelectronics Corp Manufacturing method of memory cell of flash memory
TW400641B (en) * 1997-03-13 2000-08-01 United Microelectronics Corp The manufacture method of flash memory unit
US5888870A (en) 1997-10-22 1999-03-30 Advanced Micro Devices, Inc. Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate
US5933729A (en) 1997-12-08 1999-08-03 Advanced Micro Devices, Inc. Reduction of ONO fence during self-aligned etch to eliminate poly stringers
US6103602A (en) * 1997-12-17 2000-08-15 Advanced Micro Devices, Inc. Method and system for providing a drain side pocket implant
TW407348B (en) 1999-02-03 2000-10-01 United Microelectronics Corp Manufacture of the flash memory
US6284603B1 (en) * 2000-07-12 2001-09-04 Chartered Semiconductor Manufacturing Inc. Flash memory cell structure with improved channel punch-through characteristics

Also Published As

Publication number Publication date
US6524914B1 (en) 2003-02-25
JP2004519092A (ja) 2004-06-24
WO2002037550A1 (en) 2002-05-10
CN1471728A (zh) 2004-01-28
JP4955902B2 (ja) 2012-06-20
EP1330840A1 (en) 2003-07-30
CN1222987C (zh) 2005-10-12
KR100810709B1 (ko) 2008-03-07
KR20030061383A (ko) 2003-07-18
TW556325B (en) 2003-10-01

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