AU2002227107A1 - Common source eeprom and flash memory - Google Patents

Common source eeprom and flash memory

Info

Publication number
AU2002227107A1
AU2002227107A1 AU2002227107A AU2710702A AU2002227107A1 AU 2002227107 A1 AU2002227107 A1 AU 2002227107A1 AU 2002227107 A AU2002227107 A AU 2002227107A AU 2710702 A AU2710702 A AU 2710702A AU 2002227107 A1 AU2002227107 A1 AU 2002227107A1
Authority
AU
Australia
Prior art keywords
eeprom
flash memory
common source
common
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002227107A
Inventor
Albert Bergemont
Gregorio Spadea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Virtual Silicon Technology Inc
Original Assignee
Virtual Silicon Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Virtual Silicon Technology Inc filed Critical Virtual Silicon Technology Inc
Publication of AU2002227107A1 publication Critical patent/AU2002227107A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
AU2002227107A 2000-10-30 2001-10-30 Common source eeprom and flash memory Abandoned AU2002227107A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US24462000P 2000-10-30 2000-10-30
US60/244,620 2000-10-30
US10/002,607 US6606265B2 (en) 2000-10-30 2001-10-30 Common source EEPROM and flash memory
US10/002,607 2001-10-30
PCT/US2001/045319 WO2002037502A2 (en) 2000-10-30 2001-10-30 Common source eeprom and flash memory

Publications (1)

Publication Number Publication Date
AU2002227107A1 true AU2002227107A1 (en) 2002-05-15

Family

ID=26670611

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002227107A Abandoned AU2002227107A1 (en) 2000-10-30 2001-10-30 Common source eeprom and flash memory

Country Status (4)

Country Link
US (2) US6606265B2 (en)
EP (1) EP1366496A2 (en)
AU (1) AU2002227107A1 (en)
WO (1) WO2002037502A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002227107A1 (en) 2000-10-30 2002-05-15 Virtual Silicon Technology, Inc. Common source eeprom and flash memory
US6584034B1 (en) * 2001-04-23 2003-06-24 Aplus Flash Technology Inc. Flash memory array structure suitable for multiple simultaneous operations
US6813194B2 (en) * 2002-01-10 2004-11-02 Silicon Storage Technology, Inc. Bias distribution network for digital multilevel nonvolatile flash memory
US6914842B2 (en) * 2003-07-02 2005-07-05 Ememory Technology Inc. Pure CMOS latch-type fuse circuit
TWI220252B (en) * 2003-08-06 2004-08-11 Ememory Technology Inc Method for programming, erasing and reading a flash memory cell
US7075140B2 (en) * 2003-11-26 2006-07-11 Gregorio Spadea Low voltage EEPROM memory arrays
US7115920B2 (en) * 2004-04-12 2006-10-03 International Business Machines Corporation FinFET transistor and circuit
JP4486434B2 (en) * 2004-07-29 2010-06-23 富士通株式会社 Information processing apparatus with instruction retry verification function and instruction retry verification method
US7332769B2 (en) * 2005-08-17 2008-02-19 Gregorio Spadea Non-volatile memory arrangement having nanocrystals
US8773934B2 (en) * 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
WO2008122919A1 (en) * 2007-04-05 2008-10-16 Nxp B.V. A memory cell, a memory array and a method of programming a memory cell
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US20140307504A1 (en) * 2013-04-12 2014-10-16 Winbond Electronics Corp. Data storage device, and fabrication and control methods thereof
US9536614B2 (en) 2015-04-24 2017-01-03 Nxp Usa, Inc. Common source architecture for split gate memory
CN107910033B (en) * 2017-11-14 2020-10-02 上海华虹宏力半导体制造有限公司 EEPROM and erasing, programming and reading method thereof
US10607703B2 (en) * 2018-05-16 2020-03-31 Silicon Storage Technology, Inc. Split-gate flash memory array with byte erase operation
US11315636B2 (en) 2019-10-14 2022-04-26 Silicon Storage Technology, Inc. Four gate, split-gate flash memory array with byte erase operation
CN112201286B (en) * 2020-09-11 2021-06-18 中天弘宇集成电路有限责任公司 Programming method of flash memory

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828875A (en) * 1981-08-13 1983-02-19 Nec Corp Semiconductor integrated circuit
US4451748A (en) 1982-01-15 1984-05-29 Intel Corporation MOS High voltage switching circuit
JPS6260266A (en) * 1985-09-10 1987-03-16 Toshiba Corp Non-volatile semiconductor memory device
KR890001099A (en) * 1987-06-08 1989-03-18 미다 가쓰시게 Semiconductor memory
FR2626401B1 (en) * 1988-01-26 1990-05-18 Sgs Thomson Microelectronics FLOATING GRID EEPROM MEMORY WITH SOURCE LINE SELECTION TRANSISTOR
US5097444A (en) * 1989-11-29 1992-03-17 Rohm Corporation Tunnel EEPROM with overerase protection
DE4311358C2 (en) * 1992-04-07 1999-07-22 Mitsubishi Electric Corp Non-volatile semiconductor memory device and operating method for a non-volatile semiconductor memory device and method for programming information into a non-volatile semiconductor memory device
US5592415A (en) * 1992-07-06 1997-01-07 Hitachi, Ltd. Non-volatile semiconductor memory
US5398204A (en) * 1992-11-09 1995-03-14 Seiko Epson Corporation Nonvolatile semiconductor system
EP0655742B1 (en) * 1993-11-30 1999-02-10 STMicroelectronics S.r.l. Integrated device with electrically programmable and erasable memory cells
KR0169418B1 (en) * 1995-10-30 1999-02-01 김광호 Non-volatile semiconductor memory with circuit of data self conserving at the time of page erasing
US5936883A (en) * 1996-03-29 1999-08-10 Sanyo Electric Co., Ltd. Split gate type transistor memory device
JP3960639B2 (en) * 1996-05-10 2007-08-15 株式会社ルネサステクノロジ Nonvolatile semiconductor memory device
US6147903A (en) * 1997-12-12 2000-11-14 Matsushita Electronics Corporation Non-volatile semiconductor memory device and method for driving the same
US5949718A (en) 1997-12-17 1999-09-07 Advanced Micro Devices, Inc. Method and system for selected source during read and programming of flash memory
US6288938B1 (en) * 1999-08-19 2001-09-11 Azalea Microelectronics Corporation Flash memory architecture and method of operation
US6243298B1 (en) * 1999-08-19 2001-06-05 Azalea Microelectronics Corporation Non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regions
US6272046B1 (en) * 2000-05-02 2001-08-07 Advanced Micro Devices, Inc. Individual source line to decrease column leakage
AU2002227107A1 (en) 2000-10-30 2002-05-15 Virtual Silicon Technology, Inc. Common source eeprom and flash memory

Also Published As

Publication number Publication date
US6606265B2 (en) 2003-08-12
USRE40976E1 (en) 2009-11-17
WO2002037502A2 (en) 2002-05-10
US20020176286A1 (en) 2002-11-28
WO2002037502A3 (en) 2003-09-25
EP1366496A2 (en) 2003-12-03
WO2002037502A9 (en) 2003-02-06

Similar Documents

Publication Publication Date Title
AU2002354082A1 (en) Nonvolatile memory
AU2002366471A1 (en) Non-volatile memory
AU2002245112A1 (en) Parallel erase operations in memory systems
EP1554732B8 (en) Highly compact non-volatile memory and method thereof
AU3707800A (en) Device with embedded flash and eeprom memories
AU2002227107A1 (en) Common source eeprom and flash memory
AU2001275147A1 (en) Non-volatile cache
AU2003253428A1 (en) Nonvolatile memory device
EP1220318A4 (en) Nonvolatile memory
AU2764501A (en) Dry erase member
AU1446700A (en) Nonvolatile memory
AU2003300968A1 (en) Combination non-volatile memory and input-output card with direct memory access
AU6321200A (en) Memory card
AU2002225620A1 (en) Address matching
SG105460A1 (en) Low voltage programmable and erasable flash eeprom
AU2002324462A1 (en) Tmart memory
GB2368983B (en) Non-volatile memory device
AU2001296983A1 (en) Binary-ternary content addressable memory
AU2001266490A1 (en) One aperture simultaneous rx-tx-antenna
AU2002232848A1 (en) Non-volatile magnetic memory device
AU6433099A (en) Nonvolatile memory
AU2001268287A1 (en) Eeprom memory chip with multiple use pinouts
AU2001281125A1 (en) Non-volatile memory with source side boron implantation
AU4371700A (en) Combination ata/linear flash memory device
AU3607400A (en) Nonvolatile memory