WO2009022741A1 - 不揮発性半導体メモリ装置 - Google Patents

不揮発性半導体メモリ装置 Download PDF

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Publication number
WO2009022741A1
WO2009022741A1 PCT/JP2008/064642 JP2008064642W WO2009022741A1 WO 2009022741 A1 WO2009022741 A1 WO 2009022741A1 JP 2008064642 W JP2008064642 W JP 2008064642W WO 2009022741 A1 WO2009022741 A1 WO 2009022741A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductivity type
semiconductor memory
nonvolatile semiconductor
type diffusion
memory device
Prior art date
Application number
PCT/JP2008/064642
Other languages
English (en)
French (fr)
Inventor
Yukihide Tsuji
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009528156A priority Critical patent/JP5434594B2/ja
Publication of WO2009022741A1 publication Critical patent/WO2009022741A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

【課題】低い印加電圧と少ない消費電流で、高速に電荷の消去が可能な不揮発性半導体メモリを提供する。 【解決手段】不揮発性半導体メモリは、第１導電型の半導体領域の上に順次に形成された電荷トラップ機能を有するゲート絶縁膜及びゲート電極と、ゲート電極に隣接して半導体領域の表面部分に形成された一対の第２導電型の拡散領域と、一方の第２導電型の拡散領域内に形成した第１導電型の拡散領域とを有する。
PCT/JP2008/064642 2007-08-16 2008-08-15 不揮発性半導体メモリ装置 WO2009022741A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009528156A JP5434594B2 (ja) 2007-08-16 2008-08-15 不揮発性半導体メモリ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007212051 2007-08-16
JP2007-212051 2007-08-16

Publications (1)

Publication Number Publication Date
WO2009022741A1 true WO2009022741A1 (ja) 2009-02-19

Family

ID=40350791

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064642 WO2009022741A1 (ja) 2007-08-16 2008-08-15 不揮発性半導体メモリ装置

Country Status (2)

Country Link
JP (1) JP5434594B2 (ja)
WO (1) WO2009022741A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3136423A3 (en) * 2015-08-25 2017-05-17 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275658A (ja) * 1992-03-30 1993-10-22 Toshiba Corp 不揮発性半導体記憶装置
JPH06232416A (ja) * 1993-02-03 1994-08-19 Rohm Co Ltd 半導体記憶装置およびその製法
JPH1187659A (ja) * 1997-09-05 1999-03-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004519092A (ja) * 2000-10-30 2004-06-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ソース側にホウ素を注入した不揮発性メモリ
JP2005294498A (ja) * 2004-03-31 2005-10-20 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006005078A (ja) * 2004-06-16 2006-01-05 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
WO2006080064A1 (ja) * 2005-01-27 2006-08-03 Spansion Llc 半導体装置及びその製造方法
JP2006222367A (ja) * 2005-02-14 2006-08-24 Oki Electric Ind Co Ltd 不揮発性半導体メモリ装置、駆動方法、及び製造方法
JP2006253650A (ja) * 2005-02-09 2006-09-21 Sharp Corp 不揮発性半導体記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347419A (ja) * 1991-08-29 1993-12-27 Hitachi Ltd 半導体記憶装置
JP2002368143A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体記憶装置
JP4758625B2 (ja) * 2004-08-09 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275658A (ja) * 1992-03-30 1993-10-22 Toshiba Corp 不揮発性半導体記憶装置
JPH06232416A (ja) * 1993-02-03 1994-08-19 Rohm Co Ltd 半導体記憶装置およびその製法
JPH1187659A (ja) * 1997-09-05 1999-03-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004519092A (ja) * 2000-10-30 2004-06-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ソース側にホウ素を注入した不揮発性メモリ
JP2005294498A (ja) * 2004-03-31 2005-10-20 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006005078A (ja) * 2004-06-16 2006-01-05 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
WO2006080064A1 (ja) * 2005-01-27 2006-08-03 Spansion Llc 半導体装置及びその製造方法
JP2006253650A (ja) * 2005-02-09 2006-09-21 Sharp Corp 不揮発性半導体記憶装置
JP2006222367A (ja) * 2005-02-14 2006-08-24 Oki Electric Ind Co Ltd 不揮発性半導体メモリ装置、駆動方法、及び製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3136423A3 (en) * 2015-08-25 2017-05-17 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US9887301B2 (en) 2015-08-25 2018-02-06 Renesas Electric Corporation Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPWO2009022741A1 (ja) 2010-11-18
JP5434594B2 (ja) 2014-03-05

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