NL2001100A1 - Geheugencel met zwevend gedeelte voorzien van poorten welke gebieden met verschillende geleidingstypes bevoordelen. - Google Patents

Geheugencel met zwevend gedeelte voorzien van poorten welke gebieden met verschillende geleidingstypes bevoordelen.

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Publication number
NL2001100A1
NL2001100A1 NL2001100A NL2001100A NL2001100A1 NL 2001100 A1 NL2001100 A1 NL 2001100A1 NL 2001100 A NL2001100 A NL 2001100A NL 2001100 A NL2001100 A NL 2001100A NL 2001100 A1 NL2001100 A1 NL 2001100A1
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Netherlands
Prior art keywords
gates
different conductivity
memory cell
part provided
conductivity types
Prior art date
Application number
NL2001100A
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English (en)
Other versions
NL2001100C2 (nl
Inventor
Uygar Evren Avci
Peter Lit Deh Chang
David Leighton Kencke
Ibrahim Ban
Original Assignee
Intel Corp
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Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of NL2001100A1 publication Critical patent/NL2001100A1/nl
Application granted granted Critical
Publication of NL2001100C2 publication Critical patent/NL2001100C2/nl

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
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    • H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/772—Field effect transistors
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    • H10B12/05—Making the transistor
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US10720434B2 (en) 2020-07-21
US10916547B2 (en) 2021-02-09
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US10121792B2 (en) 2018-11-06
US20210159228A1 (en) 2021-05-27
US9646970B2 (en) 2017-05-09
US20160155742A1 (en) 2016-06-02
US10381350B2 (en) 2019-08-13
NL2001100C2 (nl) 2010-06-22
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JP5064200B2 (ja) 2012-10-31
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US8217435B2 (en) 2012-07-10
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US20190386007A1 (en) 2019-12-19
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US20140015021A1 (en) 2014-01-16
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