JP4926692B2 - 配線基板及びその製造方法と半導体装置 - Google Patents
配線基板及びその製造方法と半導体装置 Download PDFInfo
- Publication number
- JP4926692B2 JP4926692B2 JP2006351000A JP2006351000A JP4926692B2 JP 4926692 B2 JP4926692 B2 JP 4926692B2 JP 2006351000 A JP2006351000 A JP 2006351000A JP 2006351000 A JP2006351000 A JP 2006351000A JP 4926692 B2 JP4926692 B2 JP 4926692B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- wiring
- base
- resin
- silicon interposer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006351000A JP4926692B2 (ja) | 2006-12-27 | 2006-12-27 | 配線基板及びその製造方法と半導体装置 |
| TW096141679A TW200832673A (en) | 2006-12-27 | 2007-11-05 | Wiring substrate, manufacturing method thereof, and semiconductor device |
| US11/984,004 US7901986B2 (en) | 2006-12-27 | 2007-11-13 | Wiring substrate, manufacturing method thereof, and semiconductor device |
| CNA2007103011690A CN101211888A (zh) | 2006-12-27 | 2007-12-26 | 布线基板及其制造方法以及半导体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006351000A JP4926692B2 (ja) | 2006-12-27 | 2006-12-27 | 配線基板及びその製造方法と半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008166327A JP2008166327A (ja) | 2008-07-17 |
| JP2008166327A5 JP2008166327A5 (https=) | 2009-12-10 |
| JP4926692B2 true JP4926692B2 (ja) | 2012-05-09 |
Family
ID=39581929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006351000A Active JP4926692B2 (ja) | 2006-12-27 | 2006-12-27 | 配線基板及びその製造方法と半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7901986B2 (https=) |
| JP (1) | JP4926692B2 (https=) |
| CN (1) | CN101211888A (https=) |
| TW (1) | TW200832673A (https=) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101195786B1 (ko) * | 2008-05-09 | 2012-11-05 | 고쿠리츠 다이가쿠 호진 큐슈 코교 다이가쿠 | 칩 사이즈 양면 접속 패키지의 제조 방법 |
| US20090277670A1 (en) * | 2008-05-10 | 2009-11-12 | Booth Jr Roger A | High Density Printed Circuit Board Interconnect and Method of Assembly |
| KR20100037300A (ko) * | 2008-10-01 | 2010-04-09 | 삼성전자주식회사 | 내장형 인터포저를 갖는 반도체장치의 형성방법 |
| WO2011033601A1 (ja) * | 2009-09-21 | 2011-03-24 | 株式会社 東芝 | 3次元集積回路製造方法、及び装置 |
| US8592973B2 (en) * | 2009-10-16 | 2013-11-26 | Stats Chippac Ltd. | Integrated circuit packaging system with package-on-package stacking and method of manufacture thereof |
| JP5352437B2 (ja) | 2009-11-30 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US8581394B2 (en) | 2010-06-21 | 2013-11-12 | Samsung Electro-Mechanics Co., Ltd | Semiconductor package module and electric circuit assembly with the same |
| US9059187B2 (en) * | 2010-09-30 | 2015-06-16 | Ibiden Co., Ltd. | Electronic component having encapsulated wiring board and method for manufacturing the same |
| KR101719636B1 (ko) * | 2011-01-28 | 2017-04-05 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| US20120292777A1 (en) * | 2011-05-18 | 2012-11-22 | Lotz Jonathan P | Backside Power Delivery Using Die Stacking |
| US20130154106A1 (en) | 2011-12-14 | 2013-06-20 | Broadcom Corporation | Stacked Packaging Using Reconstituted Wafers |
| US9548251B2 (en) | 2012-01-12 | 2017-01-17 | Broadcom Corporation | Semiconductor interposer having a cavity for intra-interposer die |
| US20130187284A1 (en) | 2012-01-24 | 2013-07-25 | Broadcom Corporation | Low Cost and High Performance Flip Chip Package |
| US8587132B2 (en) | 2012-02-21 | 2013-11-19 | Broadcom Corporation | Semiconductor package including an organic substrate and interposer having through-semiconductor vias |
| US8558395B2 (en) | 2012-02-21 | 2013-10-15 | Broadcom Corporation | Organic interface substrate having interposer with through-semiconductor vias |
| DE102012202826A1 (de) * | 2012-02-24 | 2013-08-29 | Robert Bosch Gmbh | Stromsensor zur Befestigung an einer Stromschiene |
| US8749072B2 (en) | 2012-02-24 | 2014-06-10 | Broadcom Corporation | Semiconductor package with integrated selectively conductive film interposer |
| US8872321B2 (en) | 2012-02-24 | 2014-10-28 | Broadcom Corporation | Semiconductor packages with integrated heat spreaders |
| US9275976B2 (en) | 2012-02-24 | 2016-03-01 | Broadcom Corporation | System-in-package with integrated socket |
| US8928128B2 (en) | 2012-02-27 | 2015-01-06 | Broadcom Corporation | Semiconductor package with integrated electromagnetic shielding |
| US9368458B2 (en) | 2013-07-10 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Die-on-interposer assembly with dam structure and method of manufacturing the same |
| WO2015029951A1 (ja) | 2013-08-26 | 2015-03-05 | 日立金属株式会社 | 実装基板用ウエハ、多層セラミックス基板、実装基板、チップモジュール、及び実装基板用ウエハの製造方法 |
| TWI493195B (zh) * | 2013-11-04 | 2015-07-21 | Via Tech Inc | 探針卡 |
| US12068231B2 (en) * | 2014-05-24 | 2024-08-20 | Broadpak Corporation | 3D integrations and methods of making thereof |
| JP2016058596A (ja) * | 2014-09-11 | 2016-04-21 | ソニー株式会社 | 電子デバイス、部品実装基板及び電子機器 |
| TWI566305B (zh) * | 2014-10-29 | 2017-01-11 | 巨擘科技股份有限公司 | 製造三維積體電路的方法 |
| US9971970B1 (en) * | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
| US9859202B2 (en) * | 2015-06-24 | 2018-01-02 | Dyi-chung Hu | Spacer connector |
| EP3376537A4 (en) * | 2015-11-11 | 2019-04-17 | KYOCERA Corporation | PACKAGING FOR AN ELECTRONIC COMPONENT |
| FR3044864B1 (fr) * | 2015-12-02 | 2018-01-12 | Valeo Systemes De Controle Moteur | Dispositif electrique et procede d'assemblage d'un tel dispositif electrique |
| US10181447B2 (en) | 2017-04-21 | 2019-01-15 | Invensas Corporation | 3D-interconnect |
| US10687419B2 (en) | 2017-06-13 | 2020-06-16 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
| US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
| US11281608B2 (en) * | 2017-12-11 | 2022-03-22 | Micron Technology, Inc. | Translation system for finer grain memory architectures |
| KR102661196B1 (ko) * | 2019-11-08 | 2024-04-29 | 삼성전자 주식회사 | 적층형 기판을 포함하는 전자 장치 |
| CN113053758A (zh) | 2019-12-27 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 半导体器件的制造方法 |
| US11515173B2 (en) * | 2019-12-27 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacturing |
| US20220069489A1 (en) * | 2020-08-28 | 2022-03-03 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
| US11540396B2 (en) * | 2020-08-28 | 2022-12-27 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
| CN111933590B (zh) * | 2020-09-11 | 2021-01-01 | 甬矽电子(宁波)股份有限公司 | 封装结构和封装结构制作方法 |
| CN113270327B (zh) * | 2021-07-20 | 2021-12-07 | 珠海越亚半导体股份有限公司 | 主被动器件垂直叠层嵌埋封装结构及其制作方法 |
| US12040284B2 (en) | 2021-11-12 | 2024-07-16 | Invensas Llc | 3D-interconnect with electromagnetic interference (“EMI”) shield and/or antenna |
| CN116825746A (zh) * | 2023-07-03 | 2023-09-29 | 武汉新芯集成电路制造有限公司 | 半导体封装结构及其制造方法 |
Family Cites Families (14)
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| TW434756B (en) * | 1998-06-01 | 2001-05-16 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| JP2001102479A (ja) | 1999-09-27 | 2001-04-13 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| JP2002222901A (ja) * | 2001-01-29 | 2002-08-09 | Sony Corp | 半導体デバイスの実装方法及びその実装構造、半導体装置の製造方法及び半導体装置 |
| JP3679786B2 (ja) * | 2002-06-25 | 2005-08-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP4390541B2 (ja) * | 2003-02-03 | 2009-12-24 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP3917946B2 (ja) | 2003-03-11 | 2007-05-23 | 富士通株式会社 | 積層型半導体装置 |
| TW200726784A (en) * | 2003-04-07 | 2007-07-16 | Hitachi Chemical Co Ltd | Epoxy resin molding material for sealing use and semiconductor device |
| JP2005039232A (ja) * | 2003-06-24 | 2005-02-10 | Ngk Spark Plug Co Ltd | 半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体 |
| JP4205613B2 (ja) * | 2004-03-01 | 2009-01-07 | エルピーダメモリ株式会社 | 半導体装置 |
| JP4441328B2 (ja) * | 2004-05-25 | 2010-03-31 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US7105918B2 (en) * | 2004-07-29 | 2006-09-12 | Micron Technology, Inc. | Interposer with flexible solder pad elements and methods of manufacturing the same |
| JP4551255B2 (ja) * | 2005-03-31 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2007036104A (ja) * | 2005-07-29 | 2007-02-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US7608921B2 (en) * | 2006-12-07 | 2009-10-27 | Stats Chippac, Inc. | Multi-layer semiconductor package |
-
2006
- 2006-12-27 JP JP2006351000A patent/JP4926692B2/ja active Active
-
2007
- 2007-11-05 TW TW096141679A patent/TW200832673A/zh unknown
- 2007-11-13 US US11/984,004 patent/US7901986B2/en active Active
- 2007-12-26 CN CNA2007103011690A patent/CN101211888A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN101211888A (zh) | 2008-07-02 |
| US7901986B2 (en) | 2011-03-08 |
| US20080155820A1 (en) | 2008-07-03 |
| TW200832673A (en) | 2008-08-01 |
| JP2008166327A (ja) | 2008-07-17 |
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