JP4891224B2 - 半導体装置の製造方法、及び本方法により製造される半導体装置 - Google Patents

半導体装置の製造方法、及び本方法により製造される半導体装置 Download PDF

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Publication number
JP4891224B2
JP4891224B2 JP2007502815A JP2007502815A JP4891224B2 JP 4891224 B2 JP4891224 B2 JP 4891224B2 JP 2007502815 A JP2007502815 A JP 2007502815A JP 2007502815 A JP2007502815 A JP 2007502815A JP 4891224 B2 JP4891224 B2 JP 4891224B2
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electrode
capacitor
dielectric material
wiring layer
similar
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Japanese (ja)
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JP2007528604A5 (enExample
JP2007528604A (ja
Inventor
ピー． レンメル、トーマス
カルパット、スリイラム
エフ． ミラー、メルビー
ザーチャー、ピーター
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007502815A 2004-03-10 2005-02-10 半導体装置の製造方法、及び本方法により製造される半導体装置 Expired - Fee Related JP4891224B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/799,554 US6919244B1 (en) 2004-03-10 2004-03-10 Method of making a semiconductor device, and semiconductor device made thereby
US10/799,554 2004-03-10
PCT/US2005/004008 WO2005091795A2 (en) 2004-03-10 2005-02-10 Method of making a semiconductor device, and semiconductor device made thereby

Publications (3)

Publication Number Publication Date
JP2007528604A JP2007528604A (ja) 2007-10-11
JP2007528604A5 JP2007528604A5 (enExample) 2008-04-03
JP4891224B2 true JP4891224B2 (ja) 2012-03-07

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JP2007502815A Expired - Fee Related JP4891224B2 (ja) 2004-03-10 2005-02-10 半導体装置の製造方法、及び本方法により製造される半導体装置

Country Status (6)

Country Link
US (2) US6919244B1 (enExample)
EP (2) EP1723673B1 (enExample)
JP (1) JP4891224B2 (enExample)
KR (1) KR101102785B1 (enExample)
CN (1) CN100487896C (enExample)
WO (1) WO2005091795A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260352A1 (de) * 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
JP4308691B2 (ja) * 2004-03-19 2009-08-05 富士通マイクロエレクトロニクス株式会社 半導体基板および半導体基板の製造方法
JP4707330B2 (ja) * 2004-03-30 2011-06-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20050255664A1 (en) * 2004-05-12 2005-11-17 Ching-Hung Kao Method of forming a metal-insulator-metal capacitor
KR100685616B1 (ko) * 2004-05-20 2007-02-22 매그나칩 반도체 유한회사 반도체 장치의 제조방법
US7144784B2 (en) * 2004-07-29 2006-12-05 Freescale Semiconductor, Inc. Method of forming a semiconductor device and structure thereof
KR100703965B1 (ko) * 2004-12-31 2007-04-05 삼성전자주식회사 유전체막 장벽층을 구비한 반도체 소자 커패시터의 형성방법 및 이에 의해 제조된 반도체 소자의 커패시터
KR100678638B1 (ko) * 2005-11-08 2007-02-05 삼성전자주식회사 반도체 소자의 제조 방법
JP2007311539A (ja) * 2006-05-18 2007-11-29 Nec Electronics Corp 半導体装置
KR100764741B1 (ko) * 2006-06-08 2007-10-08 삼성전자주식회사 반도체 장치 및 그 형성 방법
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
US7755164B1 (en) * 2006-06-21 2010-07-13 Amkor Technology, Inc. Capacitor and resistor having anodic metal and anodic metal oxide structure
JP2008112956A (ja) * 2006-08-03 2008-05-15 Sony Corp キャパシタおよびその製造方法、ならびに、半導体デバイスおよび液晶表示装置
US8124490B2 (en) 2006-12-21 2012-02-28 Stats Chippac, Ltd. Semiconductor device and method of forming passive devices
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP2008211115A (ja) * 2007-02-28 2008-09-11 Ricoh Co Ltd 半導体装置
US7935570B2 (en) * 2008-12-10 2011-05-03 Stats Chippac, Ltd. Semiconductor device and method of embedding integrated passive devices into the package electrically interconnected using conductive pillars
US7951663B2 (en) * 2009-05-26 2011-05-31 Stats Chippac, Ltd. Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
US8445353B1 (en) * 2009-09-29 2013-05-21 National Semiconductor Corporation Method for integrating MIM capacitor and thin film resistor in modular two layer metal process and corresponding device
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8980708B2 (en) * 2013-02-19 2015-03-17 Qualcomm Incorporated Complementary back end of line (BEOL) capacitor
US9041148B2 (en) * 2013-06-13 2015-05-26 Qualcomm Incorporated Metal-insulator-metal capacitor structures
JP6149578B2 (ja) * 2013-07-30 2017-06-21 富士通セミコンダクター株式会社 電子デバイスの製造方法
US10515949B2 (en) * 2013-10-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit and manufacturing method thereof
US9368392B2 (en) 2014-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9219110B2 (en) 2014-04-10 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9391016B2 (en) * 2014-04-10 2016-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9425061B2 (en) 2014-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Buffer cap layer to improve MIM structure performance
CN105226044B (zh) * 2014-05-29 2018-12-18 联华电子股份有限公司 集成电路及形成集成电路的方法
CN105304615B (zh) * 2014-06-05 2018-03-23 联华电子股份有限公司 半导体结构
US10115719B2 (en) * 2014-10-30 2018-10-30 GlobalFoundries, Inc. Integrated circuits with resistor structures formed from MIM capacitor material and methods for fabricating same
TWI622176B (zh) * 2015-12-04 2018-04-21 力晶科技股份有限公司 Ｍｉｍ電容之結構及其製造方法
US10658455B2 (en) 2017-09-28 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Metal insulator metal capacitor structure having high capacitance
DE102018107387B4 (de) * 2017-09-28 2022-08-25 Taiwan Semiconductor Manufacturing Co. Ltd. Metall-isolator-metall-kondensatorstruktur mit hoher kapazität und verfahren zu deren herstellung
US10879172B2 (en) * 2018-08-14 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure
US12424537B2 (en) * 2021-07-30 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and methods of forming the same
US12040268B2 (en) * 2022-06-01 2024-07-16 Qualcomm Incorporated Thin film resistor (TFR) device structure for high performance radio frequency (RF) filter design
US12289919B1 (en) * 2024-04-17 2025-04-29 Globalfoundries Singapore Pte. Ltd. Buffered top thin film resistor, MIM capacitor, and method of forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145387A (ja) * 1997-11-10 1999-05-28 Nec Corp 半導体装置およびその製造方法
JP2000307219A (ja) * 1999-04-23 2000-11-02 Denso Corp 配線基板およびその製造方法
JP2001274340A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 半導体装置及びその製造方法
JP2002141417A (ja) * 2000-08-31 2002-05-17 Agere Systems Guardian Corp 並列キャパシタの積層構造と製造方法
JP2004507105A (ja) * 2000-08-21 2004-03-04 モトローラ・インコーポレイテッド 受動素子を有する半導体デバイスおよびそれを作製する方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW367621B (en) 1995-02-27 1999-08-21 Nxp Bv Electronic component comprising a thin-film structure with passive elements
US5708559A (en) 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US5926359A (en) 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
US6146939A (en) * 1998-09-18 2000-11-14 Tritech Microelectronics, Ltd. Metal-polycrystalline silicon-N-well multiple layered capacitor
EP1057217A1 (de) * 1998-12-16 2000-12-06 Infineon Technologies AG Integrierte schaltung mit kapazitiven elementen
US6200629B1 (en) * 1999-01-12 2001-03-13 United Microelectronics Corp. Method of manufacturing multi-layer metal capacitor
US6180976B1 (en) 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
KR100280288B1 (ko) 1999-02-04 2001-01-15 윤종용 반도체 집적회로의 커패시터 제조방법
JP3180796B2 (ja) 1999-02-25 2001-06-25 日本電気株式会社 半導体装置の製造方法
US6117747A (en) 1999-11-22 2000-09-12 Chartered Semiconductor Manufacturing Ltd. Integration of MOM capacitor into dual damascene process
JP2001196559A (ja) * 2000-01-13 2001-07-19 Seiko Epson Corp 半導体装置及びその製造方法
US6466427B1 (en) * 2000-05-31 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Microelectronic capacitor structure compatible with copper containing microelectronic conductor layer processing
JP4030257B2 (ja) 2000-08-14 2008-01-09 株式会社ルネサステクノロジ 半導体集積回路装置
US6365480B1 (en) * 2000-11-27 2002-04-02 Analog Devices, Inc. IC resistor and capacitor fabrication method
JP2004523924A (ja) * 2001-03-21 2004-08-05 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス
KR100446293B1 (ko) * 2002-01-07 2004-09-01 삼성전자주식회사 저항체를 포함하는 반도체 소자 제조 방법
KR100480603B1 (ko) * 2002-07-19 2005-04-06 삼성전자주식회사 일정한 커패시턴스를 갖는 금속-절연체-금속 커패시터를 포함하는 반도체 소자
US6902981B2 (en) * 2002-10-10 2005-06-07 Chartered Semiconductor Manufacturing Ltd Structure and process for a capacitor and other devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145387A (ja) * 1997-11-10 1999-05-28 Nec Corp 半導体装置およびその製造方法
JP2000307219A (ja) * 1999-04-23 2000-11-02 Denso Corp 配線基板およびその製造方法
JP2001274340A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 半導体装置及びその製造方法
JP2004507105A (ja) * 2000-08-21 2004-03-04 モトローラ・インコーポレイテッド 受動素子を有する半導体デバイスおよびそれを作製する方法
JP2002141417A (ja) * 2000-08-31 2002-05-17 Agere Systems Guardian Corp 並列キャパシタの積層構造と製造方法

Also Published As

Publication number Publication date
EP2528086A3 (en) 2013-04-24
CN1930685A (zh) 2007-03-14
KR20070012361A (ko) 2007-01-25
WO2005091795A2 (en) 2005-10-06
EP1723673A4 (en) 2010-06-16
US7306986B2 (en) 2007-12-11
US20050272216A1 (en) 2005-12-08
WO2005091795A3 (en) 2005-12-15
CN100487896C (zh) 2009-05-13
EP1723673A2 (en) 2006-11-22
EP1723673B1 (en) 2013-09-04
EP2528086A2 (en) 2012-11-28
JP2007528604A (ja) 2007-10-11
US6919244B1 (en) 2005-07-19
KR101102785B1 (ko) 2012-01-05

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