JP4843927B2 - 高周波集積回路 - Google Patents

高周波集積回路 Download PDF

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Publication number
JP4843927B2
JP4843927B2 JP2004298955A JP2004298955A JP4843927B2 JP 4843927 B2 JP4843927 B2 JP 4843927B2 JP 2004298955 A JP2004298955 A JP 2004298955A JP 2004298955 A JP2004298955 A JP 2004298955A JP 4843927 B2 JP4843927 B2 JP 4843927B2
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JP
Japan
Prior art keywords
field effect
effect transistor
circuit
input
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004298955A
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English (en)
Japanese (ja)
Other versions
JP2006114618A (ja
JP2006114618A5 (enExample
Inventor
一正 小浜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2004298955A priority Critical patent/JP4843927B2/ja
Priority to TW094133560A priority patent/TW200623631A/zh
Priority to CNB2005800349191A priority patent/CN100557802C/zh
Priority to KR1020077007563A priority patent/KR20070083626A/ko
Priority to EP05793641A priority patent/EP1806784B1/en
Priority to US11/663,966 priority patent/US8797697B2/en
Priority to CN200910138831A priority patent/CN101546765A/zh
Priority to PCT/JP2005/018784 priority patent/WO2006041087A1/ja
Publication of JP2006114618A publication Critical patent/JP2006114618A/ja
Publication of JP2006114618A5 publication Critical patent/JP2006114618A5/ja
Application granted granted Critical
Publication of JP4843927B2 publication Critical patent/JP4843927B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004298955A 2004-10-13 2004-10-13 高周波集積回路 Expired - Fee Related JP4843927B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004298955A JP4843927B2 (ja) 2004-10-13 2004-10-13 高周波集積回路
TW094133560A TW200623631A (en) 2004-10-13 2005-09-27 High frequency integrated circuit
KR1020077007563A KR20070083626A (ko) 2004-10-13 2005-10-12 고주파 집적회로
EP05793641A EP1806784B1 (en) 2004-10-13 2005-10-12 High-frequency integrated circuit
CNB2005800349191A CN100557802C (zh) 2004-10-13 2005-10-12 高频集成电路
US11/663,966 US8797697B2 (en) 2004-10-13 2005-10-12 High frequency integrated circuit
CN200910138831A CN101546765A (zh) 2004-10-13 2005-10-12 高频集成电路
PCT/JP2005/018784 WO2006041087A1 (ja) 2004-10-13 2005-10-12 高周波集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004298955A JP4843927B2 (ja) 2004-10-13 2004-10-13 高周波集積回路

Publications (3)

Publication Number Publication Date
JP2006114618A JP2006114618A (ja) 2006-04-27
JP2006114618A5 JP2006114618A5 (enExample) 2007-11-08
JP4843927B2 true JP4843927B2 (ja) 2011-12-21

Family

ID=36148375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004298955A Expired - Fee Related JP4843927B2 (ja) 2004-10-13 2004-10-13 高周波集積回路

Country Status (7)

Country Link
US (1) US8797697B2 (enExample)
EP (1) EP1806784B1 (enExample)
JP (1) JP4843927B2 (enExample)
KR (1) KR20070083626A (enExample)
CN (2) CN101546765A (enExample)
TW (1) TW200623631A (enExample)
WO (1) WO2006041087A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8144441B2 (en) 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits
JP2008108840A (ja) * 2006-10-24 2008-05-08 Mitsubishi Electric Corp 半導体装置
JP2009054851A (ja) * 2007-08-28 2009-03-12 Panasonic Corp 半導体集積回路
JP2009087962A (ja) * 2007-09-27 2009-04-23 Panasonic Corp 保護回路及び半導体集積回路
WO2010112971A2 (en) * 2009-03-31 2010-10-07 Freescale Semiconductor, Inc. Integrated protection circuit
US8427796B2 (en) * 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs
JP5424128B2 (ja) * 2010-11-09 2014-02-26 次世代パワーデバイス技術研究組合 保護素子およびそれを備えた半導体装置
JP2012190872A (ja) * 2011-03-09 2012-10-04 Ricoh Co Ltd 面発光レーザ素子の製造方法、光走査装置及び画像形成装置
US9064704B2 (en) * 2013-02-15 2015-06-23 Win Semiconductors Corp. Integrated circuits with ESD protection devices
US9812440B2 (en) * 2014-08-29 2017-11-07 Fairchild Semiconductor Corporation Biased ESD circuit
US20170092637A1 (en) * 2015-09-30 2017-03-30 Infineon Technologies Ag Semiconductor ESD Protection Device and Method
JP6597357B2 (ja) * 2016-02-09 2019-10-30 三菱電機株式会社 保護ダイオード付き電界効果トランジスタ
CN108206515A (zh) * 2016-12-16 2018-06-26 江苏安其威微电子科技有限公司 Mim电容的esd保护电路
CN113131875B (zh) * 2021-03-31 2022-07-12 复旦大学 一种高可靠性低噪声放大器
JP2023136954A (ja) 2022-03-17 2023-09-29 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
CN116545425A (zh) * 2023-07-06 2023-08-04 合肥芯谷微电子股份有限公司 一种毫米波单刀单掷开关

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162466A (en) 1981-03-31 1982-10-06 Toshiba Corp Input-output protective circuit for integrated circuit
JPH0449652A (ja) * 1990-06-19 1992-02-19 Nec Corp 半導体装置の入出力保護回路
JPH05136360A (ja) * 1991-11-14 1993-06-01 Hitachi Ltd 静電破壊保護回路、及び半導体集積回路
JP3113951B2 (ja) 1992-06-26 2000-12-04 日本電気エンジニアリング株式会社 ＧａＡｓＦＥＴ保護電源回路
US5615073A (en) * 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
FR2744578B1 (fr) 1996-02-06 1998-04-30 Motorola Semiconducteurs Amlificateur hautes frequences
US5774318A (en) * 1996-11-27 1998-06-30 Raytheon Company I.C. power supply terminal protection clamp
JP2000510653A (ja) 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型ｅｓｄ保護デバイス
JP3570180B2 (ja) * 1997-11-20 2004-09-29 セイコーエプソン株式会社 半導体集積装置
JP2000067323A (ja) 1998-08-20 2000-03-03 Toshiba Tec Corp ドロワ
US6459553B1 (en) * 1999-03-19 2002-10-01 Ati International Srl Single gate oxide electrostatic discharge protection circuit
US6999290B1 (en) * 1999-04-28 2006-02-14 Hitachi, Ltd. Integrated circuit with protection against electrostatic damage
KR100379619B1 (ko) * 2000-10-13 2003-04-10 광주과학기술원 단일집적 ｅ／ｄ 모드 ｈｅｍｔ 및 그 제조방법
TW511179B (en) * 2000-11-28 2002-11-21 Nat Science Council Method of using plasma treatment to improve electric characteristic of oxide layer
US6661276B1 (en) * 2002-07-29 2003-12-09 Lovoltech Inc. MOSFET driver matching circuit for an enhancement mode JFET
US7183592B2 (en) * 2004-05-26 2007-02-27 Raytheon Company Field effect transistor

Also Published As

Publication number Publication date
US8797697B2 (en) 2014-08-05
CN101546765A (zh) 2009-09-30
EP1806784A4 (en) 2011-04-13
EP1806784A1 (en) 2007-07-11
JP2006114618A (ja) 2006-04-27
CN101040381A (zh) 2007-09-19
WO2006041087A1 (ja) 2006-04-20
TW200623631A (en) 2006-07-01
KR20070083626A (ko) 2007-08-24
CN100557802C (zh) 2009-11-04
EP1806784B1 (en) 2013-01-16
US20080043388A1 (en) 2008-02-21
TWI326157B (enExample) 2010-06-11

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