CN101546765A - 高频集成电路 - Google Patents

高频集成电路 Download PDF

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Publication number
CN101546765A
CN101546765A CN200910138831A CN200910138831A CN101546765A CN 101546765 A CN101546765 A CN 101546765A CN 200910138831 A CN200910138831 A CN 200910138831A CN 200910138831 A CN200910138831 A CN 200910138831A CN 101546765 A CN101546765 A CN 101546765A
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CN
China
Prior art keywords
field effect
effect transistor
input
frequency
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910138831A
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English (en)
Chinese (zh)
Inventor
小浜一正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN101546765A publication Critical patent/CN101546765A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN200910138831A 2004-10-13 2005-10-12 高频集成电路 Pending CN101546765A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004298955 2004-10-13
JP2004298955A JP4843927B2 (ja) 2004-10-13 2004-10-13 高周波集積回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800349191A Division CN100557802C (zh) 2004-10-13 2005-10-12 高频集成电路

Publications (1)

Publication Number Publication Date
CN101546765A true CN101546765A (zh) 2009-09-30

Family

ID=36148375

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2005800349191A Expired - Fee Related CN100557802C (zh) 2004-10-13 2005-10-12 高频集成电路
CN200910138831A Pending CN101546765A (zh) 2004-10-13 2005-10-12 高频集成电路

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNB2005800349191A Expired - Fee Related CN100557802C (zh) 2004-10-13 2005-10-12 高频集成电路

Country Status (7)

Country Link
US (1) US8797697B2 (enExample)
EP (1) EP1806784B1 (enExample)
JP (1) JP4843927B2 (enExample)
KR (1) KR20070083626A (enExample)
CN (2) CN100557802C (enExample)
TW (1) TW200623631A (enExample)
WO (1) WO2006041087A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102754335A (zh) * 2010-01-19 2012-10-24 高通股份有限公司 用于rf ic的高压高频esd防护电路
CN107046030A (zh) * 2016-02-09 2017-08-15 三菱电机株式会社 带保护二极管的场效应晶体管
CN108206515A (zh) * 2016-12-16 2018-06-26 江苏安其威微电子科技有限公司 Mim电容的esd保护电路

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8144441B2 (en) 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits
JP2008108840A (ja) * 2006-10-24 2008-05-08 Mitsubishi Electric Corp 半導体装置
JP2009054851A (ja) * 2007-08-28 2009-03-12 Panasonic Corp 半導体集積回路
JP2009087962A (ja) * 2007-09-27 2009-04-23 Panasonic Corp 保護回路及び半導体集積回路
US8681459B2 (en) 2009-03-31 2014-03-25 Freescale Semiconductor, Inc. Integrated protection circuit
JP5424128B2 (ja) * 2010-11-09 2014-02-26 次世代パワーデバイス技術研究組合 保護素子およびそれを備えた半導体装置
JP2012190872A (ja) * 2011-03-09 2012-10-04 Ricoh Co Ltd 面発光レーザ素子の製造方法、光走査装置及び画像形成装置
US9064704B2 (en) * 2013-02-15 2015-06-23 Win Semiconductors Corp. Integrated circuits with ESD protection devices
US9812440B2 (en) * 2014-08-29 2017-11-07 Fairchild Semiconductor Corporation Biased ESD circuit
US20170092637A1 (en) * 2015-09-30 2017-03-30 Infineon Technologies Ag Semiconductor ESD Protection Device and Method
CN113131875B (zh) * 2021-03-31 2022-07-12 复旦大学 一种高可靠性低噪声放大器
JP2023136954A (ja) 2022-03-17 2023-09-29 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
CN116545425A (zh) * 2023-07-06 2023-08-04 合肥芯谷微电子股份有限公司 一种毫米波单刀单掷开关

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162466A (en) * 1981-03-31 1982-10-06 Toshiba Corp Input-output protective circuit for integrated circuit
JPH0449652A (ja) * 1990-06-19 1992-02-19 Nec Corp 半導体装置の入出力保護回路
JPH05136360A (ja) * 1991-11-14 1993-06-01 Hitachi Ltd 静電破壊保護回路、及び半導体集積回路
JP3113951B2 (ja) 1992-06-26 2000-12-04 日本電気エンジニアリング株式会社 ＧａＡｓＦＥＴ保護電源回路
US5615073A (en) * 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
FR2744578B1 (fr) * 1996-02-06 1998-04-30 Motorola Semiconducteurs Amlificateur hautes frequences
US5774318A (en) * 1996-11-27 1998-06-30 Raytheon Company I.C. power supply terminal protection clamp
JP2000510653A (ja) 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型ｅｓｄ保護デバイス
JP3570180B2 (ja) * 1997-11-20 2004-09-29 セイコーエプソン株式会社 半導体集積装置
JP2000067323A (ja) 1998-08-20 2000-03-03 Toshiba Tec Corp ドロワ
US6459553B1 (en) * 1999-03-19 2002-10-01 Ati International Srl Single gate oxide electrostatic discharge protection circuit
WO2000067323A1 (fr) * 1999-04-28 2000-11-09 Hitachi, Ltd. Circuit integre avec protection contre les deteriorations electrostatiques
KR100379619B1 (ko) * 2000-10-13 2003-04-10 광주과학기술원 단일집적 ｅ／ｄ 모드 ｈｅｍｔ 및 그 제조방법
TW511179B (en) * 2000-11-28 2002-11-21 Nat Science Council Method of using plasma treatment to improve electric characteristic of oxide layer
US6661276B1 (en) * 2002-07-29 2003-12-09 Lovoltech Inc. MOSFET driver matching circuit for an enhancement mode JFET
US7183592B2 (en) * 2004-05-26 2007-02-27 Raytheon Company Field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102754335A (zh) * 2010-01-19 2012-10-24 高通股份有限公司 用于rf ic的高压高频esd防护电路
CN102754335B (zh) * 2010-01-19 2015-06-24 高通股份有限公司 用于rf ic的高压高频esd防护电路
CN107046030A (zh) * 2016-02-09 2017-08-15 三菱电机株式会社 带保护二极管的场效应晶体管
CN107046030B (zh) * 2016-02-09 2021-04-02 三菱电机株式会社 带保护二极管的场效应晶体管
CN108206515A (zh) * 2016-12-16 2018-06-26 江苏安其威微电子科技有限公司 Mim电容的esd保护电路

Also Published As

Publication number Publication date
TWI326157B (enExample) 2010-06-11
KR20070083626A (ko) 2007-08-24
US20080043388A1 (en) 2008-02-21
WO2006041087A1 (ja) 2006-04-20
CN100557802C (zh) 2009-11-04
EP1806784B1 (en) 2013-01-16
EP1806784A1 (en) 2007-07-11
CN101040381A (zh) 2007-09-19
TW200623631A (en) 2006-07-01
JP4843927B2 (ja) 2011-12-21
US8797697B2 (en) 2014-08-05
EP1806784A4 (en) 2011-04-13
JP2006114618A (ja) 2006-04-27

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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Application publication date: 20090930