TWI326157B - - Google Patents
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- Publication number
- TWI326157B TWI326157B TW094133560A TW94133560A TWI326157B TW I326157 B TWI326157 B TW I326157B TW 094133560 A TW094133560 A TW 094133560A TW 94133560 A TW94133560 A TW 94133560A TW I326157 B TWI326157 B TW I326157B
- Authority
- TW
- Taiwan
- Prior art keywords
- field effect
- effect transistor
- high frequency
- integrated circuit
- frequency integrated
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims description 202
- 239000000758 substrate Substances 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 49
- 150000001875 compounds Chemical class 0.000 claims description 48
- 239000003990 capacitor Substances 0.000 claims description 45
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 19
- 230000000694 effects Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims 1
- 230000001681 protective effect Effects 0.000 description 16
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101100326920 Caenorhabditis elegans ctl-1 gene Proteins 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004298955A JP4843927B2 (ja) | 2004-10-13 | 2004-10-13 | 高周波集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200623631A TW200623631A (en) | 2006-07-01 |
| TWI326157B true TWI326157B (enExample) | 2010-06-11 |
Family
ID=36148375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094133560A TW200623631A (en) | 2004-10-13 | 2005-09-27 | High frequency integrated circuit |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8797697B2 (enExample) |
| EP (1) | EP1806784B1 (enExample) |
| JP (1) | JP4843927B2 (enExample) |
| KR (1) | KR20070083626A (enExample) |
| CN (2) | CN100557802C (enExample) |
| TW (1) | TW200623631A (enExample) |
| WO (1) | WO2006041087A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8144441B2 (en) | 2006-08-30 | 2012-03-27 | Triquint Semiconductor, Inc. | Electrostatic discharge protection circuit for compound semiconductor devices and circuits |
| JP2008108840A (ja) * | 2006-10-24 | 2008-05-08 | Mitsubishi Electric Corp | 半導体装置 |
| JP2009054851A (ja) * | 2007-08-28 | 2009-03-12 | Panasonic Corp | 半導体集積回路 |
| JP2009087962A (ja) * | 2007-09-27 | 2009-04-23 | Panasonic Corp | 保護回路及び半導体集積回路 |
| US8681459B2 (en) | 2009-03-31 | 2014-03-25 | Freescale Semiconductor, Inc. | Integrated protection circuit |
| US8427796B2 (en) * | 2010-01-19 | 2013-04-23 | Qualcomm, Incorporated | High voltage, high frequency ESD protection circuit for RF ICs |
| JP5424128B2 (ja) * | 2010-11-09 | 2014-02-26 | 次世代パワーデバイス技術研究組合 | 保護素子およびそれを備えた半導体装置 |
| JP2012190872A (ja) * | 2011-03-09 | 2012-10-04 | Ricoh Co Ltd | 面発光レーザ素子の製造方法、光走査装置及び画像形成装置 |
| US9064704B2 (en) * | 2013-02-15 | 2015-06-23 | Win Semiconductors Corp. | Integrated circuits with ESD protection devices |
| US9812440B2 (en) * | 2014-08-29 | 2017-11-07 | Fairchild Semiconductor Corporation | Biased ESD circuit |
| US20170092637A1 (en) * | 2015-09-30 | 2017-03-30 | Infineon Technologies Ag | Semiconductor ESD Protection Device and Method |
| JP6597357B2 (ja) * | 2016-02-09 | 2019-10-30 | 三菱電機株式会社 | 保護ダイオード付き電界効果トランジスタ |
| CN108206515A (zh) * | 2016-12-16 | 2018-06-26 | 江苏安其威微电子科技有限公司 | Mim电容的esd保护电路 |
| CN113131875B (zh) * | 2021-03-31 | 2022-07-12 | 复旦大学 | 一种高可靠性低噪声放大器 |
| JP2023136954A (ja) | 2022-03-17 | 2023-09-29 | キオクシア株式会社 | メモリデバイス及びメモリデバイスの製造方法 |
| CN116545425A (zh) * | 2023-07-06 | 2023-08-04 | 合肥芯谷微电子股份有限公司 | 一种毫米波单刀单掷开关 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57162466A (en) * | 1981-03-31 | 1982-10-06 | Toshiba Corp | Input-output protective circuit for integrated circuit |
| JPH0449652A (ja) * | 1990-06-19 | 1992-02-19 | Nec Corp | 半導体装置の入出力保護回路 |
| JPH05136360A (ja) * | 1991-11-14 | 1993-06-01 | Hitachi Ltd | 静電破壊保護回路、及び半導体集積回路 |
| JP3113951B2 (ja) | 1992-06-26 | 2000-12-04 | 日本電気エンジニアリング株式会社 | ＧａＡｓＦＥＴ保護電源回路 |
| US5615073A (en) * | 1995-06-22 | 1997-03-25 | National Semiconductor Corporation | Electrostatic discharge protection apparatus |
| US5751525A (en) * | 1996-01-05 | 1998-05-12 | Analog Devices, Inc. | EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages |
| FR2744578B1 (fr) * | 1996-02-06 | 1998-04-30 | Motorola Semiconducteurs | Amlificateur hautes frequences |
| US5774318A (en) * | 1996-11-27 | 1998-06-30 | Raytheon Company | I.C. power supply terminal protection clamp |
| JP2000510653A (ja) | 1997-04-16 | 2000-08-15 | ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ | 高速集積回路のための分散型ｅｓｄ保護デバイス |
| JP3570180B2 (ja) * | 1997-11-20 | 2004-09-29 | セイコーエプソン株式会社 | 半導体集積装置 |
| JP2000067323A (ja) | 1998-08-20 | 2000-03-03 | Toshiba Tec Corp | ドロワ |
| US6459553B1 (en) * | 1999-03-19 | 2002-10-01 | Ati International Srl | Single gate oxide electrostatic discharge protection circuit |
| WO2000067323A1 (fr) * | 1999-04-28 | 2000-11-09 | Hitachi, Ltd. | Circuit integre avec protection contre les deteriorations electrostatiques |
| KR100379619B1 (ko) * | 2000-10-13 | 2003-04-10 | 광주과학기술원 | 단일집적 ｅ／ｄ 모드 ｈｅｍｔ 및 그 제조방법 |
| TW511179B (en) * | 2000-11-28 | 2002-11-21 | Nat Science Council | Method of using plasma treatment to improve electric characteristic of oxide layer |
| US6661276B1 (en) * | 2002-07-29 | 2003-12-09 | Lovoltech Inc. | MOSFET driver matching circuit for an enhancement mode JFET |
| US7183592B2 (en) * | 2004-05-26 | 2007-02-27 | Raytheon Company | Field effect transistor |
-
2004
- 2004-10-13 JP JP2004298955A patent/JP4843927B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-27 TW TW094133560A patent/TW200623631A/zh not_active IP Right Cessation
- 2005-10-12 CN CNB2005800349191A patent/CN100557802C/zh not_active Expired - Fee Related
- 2005-10-12 CN CN200910138831A patent/CN101546765A/zh active Pending
- 2005-10-12 EP EP05793641A patent/EP1806784B1/en not_active Expired - Lifetime
- 2005-10-12 KR KR1020077007563A patent/KR20070083626A/ko not_active Ceased
- 2005-10-12 US US11/663,966 patent/US8797697B2/en not_active Expired - Fee Related
- 2005-10-12 WO PCT/JP2005/018784 patent/WO2006041087A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN101546765A (zh) | 2009-09-30 |
| KR20070083626A (ko) | 2007-08-24 |
| US20080043388A1 (en) | 2008-02-21 |
| WO2006041087A1 (ja) | 2006-04-20 |
| CN100557802C (zh) | 2009-11-04 |
| EP1806784B1 (en) | 2013-01-16 |
| EP1806784A1 (en) | 2007-07-11 |
| CN101040381A (zh) | 2007-09-19 |
| TW200623631A (en) | 2006-07-01 |
| JP4843927B2 (ja) | 2011-12-21 |
| US8797697B2 (en) | 2014-08-05 |
| EP1806784A4 (en) | 2011-04-13 |
| JP2006114618A (ja) | 2006-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |