JP4817210B2 - 成膜装置および成膜方法 - Google Patents

成膜装置および成膜方法 Download PDF

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Publication number
JP4817210B2
JP4817210B2 JP2001000183A JP2001000183A JP4817210B2 JP 4817210 B2 JP4817210 B2 JP 4817210B2 JP 2001000183 A JP2001000183 A JP 2001000183A JP 2001000183 A JP2001000183 A JP 2001000183A JP 4817210 B2 JP4817210 B2 JP 4817210B2
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process gas
gas
support member
substrate
gas discharge
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JP2001254181A (ja
JP2001254181A5 (enExample
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公裕 松瀬
林 大槻
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001000183A 2000-01-06 2001-01-04 成膜装置および成膜方法 Expired - Fee Related JP4817210B2 (ja)

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JP2001000183A JP4817210B2 (ja) 2000-01-06 2001-01-04 成膜装置および成膜方法

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JP2000-590 2000-01-06
JP2000000590 2000-01-06
JP2000000590 2000-01-06
JP2001000183A JP4817210B2 (ja) 2000-01-06 2001-01-04 成膜装置および成膜方法

Related Child Applications (4)

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JP2008089535A Division JP4817266B2 (ja) 2000-01-06 2008-03-31 成膜装置および成膜方法
JP2008089536A Division JP4817267B2 (ja) 2000-01-06 2008-03-31 成膜装置および成膜方法
JP2008089537A Division JP4817268B2 (ja) 2000-01-06 2008-03-31 成膜装置および成膜方法
JP2008089538A Division JP2008208462A (ja) 2000-01-06 2008-03-31 成膜装置および成膜方法

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JP2001254181A JP2001254181A (ja) 2001-09-18
JP2001254181A5 JP2001254181A5 (enExample) 2011-04-07
JP4817210B2 true JP4817210B2 (ja) 2011-11-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10072336B2 (en) 2014-10-31 2018-09-11 Tokyo Electron Limited Film forming apparatus, film forming method, and recording medium
US10683573B2 (en) 2014-11-13 2020-06-16 Tokyo Electron Limited Film forming apparatus

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