JP4772188B2 - 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法 - Google Patents

強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法 Download PDF

Info

Publication number
JP4772188B2
JP4772188B2 JP2000585917A JP2000585917A JP4772188B2 JP 4772188 B2 JP4772188 B2 JP 4772188B2 JP 2000585917 A JP2000585917 A JP 2000585917A JP 2000585917 A JP2000585917 A JP 2000585917A JP 4772188 B2 JP4772188 B2 JP 4772188B2
Authority
JP
Japan
Prior art keywords
layer
pzt
electrode
conductive oxide
ferroelectric capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000585917A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002531943A5 (https=
JP2002531943A (ja
Inventor
ヘルト・ノルガ
ディルク・ウーテルス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of JP2002531943A publication Critical patent/JP2002531943A/ja
Publication of JP2002531943A5 publication Critical patent/JP2002531943A5/ja
Application granted granted Critical
Publication of JP4772188B2 publication Critical patent/JP4772188B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2000585917A 1998-11-30 1999-11-30 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法 Expired - Fee Related JP4772188B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US11027698P 1998-11-30 1998-11-30
US60/110,276 1998-11-30
EP99870224 1999-10-26
EP60/110,276 1999-10-26
EP99870224.5 1999-10-26
PCT/BE1999/000155 WO2000033361A1 (en) 1998-11-30 1999-11-30 Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate

Publications (3)

Publication Number Publication Date
JP2002531943A JP2002531943A (ja) 2002-09-24
JP2002531943A5 JP2002531943A5 (https=) 2006-11-24
JP4772188B2 true JP4772188B2 (ja) 2011-09-14

Family

ID=44693676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000585917A Expired - Fee Related JP4772188B2 (ja) 1998-11-30 1999-11-30 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法

Country Status (5)

Country Link
US (2) US6545856B1 (https=)
EP (1) EP1145293A1 (https=)
JP (1) JP4772188B2 (https=)
AU (1) AU1539900A (https=)
WO (1) WO2000033361A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7009240B1 (en) 2000-06-21 2006-03-07 Micron Technology, Inc. Structures and methods for enhancing capacitors in integrated circuits
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
US6781179B2 (en) * 2001-05-30 2004-08-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film
JP3971598B2 (ja) * 2001-11-01 2007-09-05 富士通株式会社 強誘電体キャパシタおよび半導体装置
JP2003332539A (ja) * 2002-05-17 2003-11-21 Nec Electronics Corp 強誘電体キャパシタ及びその製造方法並びに半導体記憶装置
US20040023416A1 (en) * 2002-08-05 2004-02-05 Gilbert Stephen R. Method for forming a paraelectric semiconductor device
US7163828B2 (en) * 2003-03-24 2007-01-16 Seiko Epson Corporation Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device
JP4313797B2 (ja) * 2003-06-06 2009-08-12 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US7119021B2 (en) * 2003-11-07 2006-10-10 Infineon Technologies Ag Ferroelectric capacitor devices and a method for compensating for damage to a capacitor caused by etching
US6872669B1 (en) 2003-12-19 2005-03-29 Texas Instruments Incorporated PZT (111) texture through Ir texture improvement
JP4616830B2 (ja) * 2004-04-28 2011-01-19 富士通株式会社 半導体装置の製造方法
JP4376761B2 (ja) * 2004-11-24 2009-12-02 パナソニック株式会社 容量素子及び半導体記憶装置
JP5140935B2 (ja) * 2006-03-28 2013-02-13 富士通セミコンダクター株式会社 マグネトロンスパッタ成膜装置、及び半導体装置の製造方法
US20070279231A1 (en) * 2006-06-05 2007-12-06 Hong Kong University Of Science And Technology Asymmetric rfid tag antenna
JP5007528B2 (ja) * 2006-06-12 2012-08-22 セイコーエプソン株式会社 圧電素子の製造方法
JP5040231B2 (ja) * 2006-09-21 2012-10-03 富士通セミコンダクター株式会社 半導体装置の製造方法
CN100557737C (zh) * 2006-09-30 2009-11-04 中国科学技术大学 透明外延铁电薄膜电容器及其制备方法
JP5380784B2 (ja) 2007-04-12 2014-01-08 ソニー株式会社 オートフォーカス装置、撮像装置及びオートフォーカス方法
US8154850B2 (en) 2007-05-11 2012-04-10 Paratek Microwave, Inc. Systems and methods for a thin film capacitor having a composite high-k thin film stack
US9522064B2 (en) 2011-05-16 2016-12-20 Hlt, Inc. Inversion delivery device and method for a prosthesis
JP5930852B2 (ja) * 2012-06-04 2016-06-08 株式会社ユーテック 強誘電体結晶膜の製造方法
JP6347085B2 (ja) * 2014-02-18 2018-06-27 アドバンストマテリアルテクノロジーズ株式会社 強誘電体膜及びその製造方法
US10115527B2 (en) 2015-03-09 2018-10-30 Blackberry Limited Thin film dielectric stack
US10297658B2 (en) 2016-06-16 2019-05-21 Blackberry Limited Method and apparatus for a thin film dielectric stack
CN113130498A (zh) * 2021-04-09 2021-07-16 无锡拍字节科技有限公司 一种铁电存储器的结构及其制造方法

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04181766A (ja) * 1990-11-16 1992-06-29 Toshiba Corp 電子部品
JPH0668529A (ja) * 1992-04-13 1994-03-11 Sharp Corp 強誘電性素子のための多層電極
JPH06283438A (ja) * 1993-03-26 1994-10-07 Nippon Sanso Kk 酸化ルテニウムの成膜方法
JPH06291253A (ja) * 1993-04-07 1994-10-18 Oki Electric Ind Co Ltd 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法
JPH0741944A (ja) * 1993-07-27 1995-02-10 Seiko Epson Corp 強誘電体薄膜の製造方法及び誘電体薄膜の製造方法
JPH0799252A (ja) * 1993-06-22 1995-04-11 Sharp Corp 強誘電体膜の製造方法及びそれを用いた半導体装置
JPH07172984A (ja) * 1993-12-20 1995-07-11 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法及びその製造装置
JPH088403A (ja) * 1994-06-17 1996-01-12 Sharp Corp 強誘電体結晶薄膜被覆基板及び該基板を含む強誘電体薄膜素子及び該強誘電体薄膜素子の製造方法
JPH0851165A (ja) * 1994-01-13 1996-02-20 Rohm Co Ltd 誘電体キャパシタおよび不揮発性メモリ
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JPH0945872A (ja) * 1995-07-28 1997-02-14 Olympus Optical Co Ltd 誘電体薄膜素子
JPH09260603A (ja) * 1996-03-19 1997-10-03 Toshiba Corp 薄膜キャパシタおよび半導体記憶装置
JPH09331034A (ja) * 1996-06-07 1997-12-22 Sharp Corp 酸化物電極膜の形成方法
JPH10173155A (ja) * 1996-12-03 1998-06-26 Lg Semicon Co Ltd 半導体装置のキャパシタ及びその製造方法
JPH10189885A (ja) * 1996-12-25 1998-07-21 Hitachi Ltd 強誘電体メモリ素子及びその製造方法
JPH10209392A (ja) * 1997-01-22 1998-08-07 Sony Corp 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
JPH11204746A (ja) * 1997-12-31 1999-07-30 Samsung Electron Co Ltd 強誘電体メモリ装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234641A (en) * 1988-05-06 1993-08-10 Avx Corporation Method of making varistor or capacitor
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
US5923970A (en) * 1997-11-20 1999-07-13 Advanced Technology Materials, Inc. Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure
US6303490B1 (en) * 2000-02-09 2001-10-16 Macronix International Co., Ltd. Method for barrier layer in copper manufacture

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04181766A (ja) * 1990-11-16 1992-06-29 Toshiba Corp 電子部品
JPH0668529A (ja) * 1992-04-13 1994-03-11 Sharp Corp 強誘電性素子のための多層電極
JPH06283438A (ja) * 1993-03-26 1994-10-07 Nippon Sanso Kk 酸化ルテニウムの成膜方法
JPH06291253A (ja) * 1993-04-07 1994-10-18 Oki Electric Ind Co Ltd 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法
JPH0799252A (ja) * 1993-06-22 1995-04-11 Sharp Corp 強誘電体膜の製造方法及びそれを用いた半導体装置
JPH0741944A (ja) * 1993-07-27 1995-02-10 Seiko Epson Corp 強誘電体薄膜の製造方法及び誘電体薄膜の製造方法
JPH07172984A (ja) * 1993-12-20 1995-07-11 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法及びその製造装置
JPH0851165A (ja) * 1994-01-13 1996-02-20 Rohm Co Ltd 誘電体キャパシタおよび不揮発性メモリ
JPH088403A (ja) * 1994-06-17 1996-01-12 Sharp Corp 強誘電体結晶薄膜被覆基板及び該基板を含む強誘電体薄膜素子及び該強誘電体薄膜素子の製造方法
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JPH11502376A (ja) * 1995-06-28 1999-02-23 ベル コミュニケーションズ リサーチ，インコーポレイテッド シリコン上に集積された強誘電体キャパシタのための障壁層
JPH0945872A (ja) * 1995-07-28 1997-02-14 Olympus Optical Co Ltd 誘電体薄膜素子
JPH09260603A (ja) * 1996-03-19 1997-10-03 Toshiba Corp 薄膜キャパシタおよび半導体記憶装置
JPH09331034A (ja) * 1996-06-07 1997-12-22 Sharp Corp 酸化物電極膜の形成方法
JPH10173155A (ja) * 1996-12-03 1998-06-26 Lg Semicon Co Ltd 半導体装置のキャパシタ及びその製造方法
JPH10189885A (ja) * 1996-12-25 1998-07-21 Hitachi Ltd 強誘電体メモリ素子及びその製造方法
JPH10209392A (ja) * 1997-01-22 1998-08-07 Sony Corp 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
JPH11204746A (ja) * 1997-12-31 1999-07-30 Samsung Electron Co Ltd 強誘電体メモリ装置及びその製造方法

Also Published As

Publication number Publication date
US6643117B2 (en) 2003-11-04
JP2002531943A (ja) 2002-09-24
US20030133250A1 (en) 2003-07-17
WO2000033361A1 (en) 2000-06-08
US6545856B1 (en) 2003-04-08
AU1539900A (en) 2000-06-19
EP1145293A1 (en) 2001-10-17

Similar Documents

Publication Publication Date Title
JP4772188B2 (ja) 強誘電コンデンサの作成方法および基板上にｐｚｔ層を成長させる方法
JP3040483B2 (ja) ハイブリッド電極を用いた多結晶強誘電体コンデンサーヘテロ構造
EP0747937B1 (en) Method of forming a substrate coated with a ferroelectric thin film
US5825057A (en) Process for fabricating layered superlattice materials and making electronic devices including same
JP3373525B2 (ja) シリコン上に集積された多層強誘電体セルおよびペロブスカイト電子へテロ構造
JP3188179B2 (ja) 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP3730122B2 (ja) 強誘電体集積回路メモリセルおよびその製造方法
US6072207A (en) Process for fabricating layered superlattice materials and making electronic devices including same
EP0665981B1 (en) Process for fabricating layered superlattice materials and electronic devices including same
US6162293A (en) Method for manufacturing ferroelectric thin film, substrate covered with ferroelectric thin film, and capacitor
JP3832617B2 (ja) 多層状電極の鉛ゲルマネート強誘電体構造およびその堆積方法
KR19980703182A (ko) 성층 초격자 재료 및 이를 포함하는 전자 소자 제조를 위한저온 처리
JPH10313097A (ja) 強誘電体薄膜、製造方法及び強誘電体薄膜を含んでなる素子
JP3891603B2 (ja) 強誘電体薄膜被覆基板、キャパシタ構造素子、及び強誘電体薄膜被覆基板の製造方法
JP3353833B2 (ja) 半導体装置およびその製造方法
JPH08222711A (ja) 強誘電体キャパシタと、強誘電体キャパシタ及び強誘電体膜の形成方法
JP3366212B2 (ja) 強誘電体薄膜素子の製造方法、強誘電体薄膜素子及び強誘電体メモリ装置
JP2003318369A (ja) 半導体装置及びその製造方法
JPH10214945A (ja) 強誘電体薄膜被覆基板、キャパシタ構造素子、及び強誘電体薄膜被覆基板の製造方法
KR100490174B1 (ko) Pzt박막의 강유전 특성이 향상된 반도체 소자와 그 제조방법
JP3720270B2 (ja) 酸化物結晶質膜の製造方法
JP2002299573A (ja) 強誘電体薄膜素子の製造方法ならびに強誘電体薄膜素子
JP2001332549A (ja) 結晶性酸化物膜の形成方法および半導体装置
CN1164295A (zh) 使用混合电极的多晶铁电电容器异质结构
JPWO1998008255A1 (ja) 酸化物誘電体素子の製造方法、それを用いたメモリ及び半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060926

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060926

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100525

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100713

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100713

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110614

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110622

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140701

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees