AU1539900A - Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate - Google Patents

Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate

Info

Publication number
AU1539900A
AU1539900A AU15399/00A AU1539900A AU1539900A AU 1539900 A AU1539900 A AU 1539900A AU 15399/00 A AU15399/00 A AU 15399/00A AU 1539900 A AU1539900 A AU 1539900A AU 1539900 A AU1539900 A AU 1539900A
Authority
AU
Australia
Prior art keywords
ferro
fabrication
growing
substrate
pzt layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU15399/00A
Other languages
English (en)
Inventor
Gerd Norga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of AU1539900A publication Critical patent/AU1539900A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
AU15399/00A 1998-11-30 1999-11-30 Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate Abandoned AU1539900A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11027698P 1998-11-30 1998-11-30
US60110276 1998-11-30
EP99870224 1999-10-26
EP99870224 1999-10-26
PCT/BE1999/000155 WO2000033361A1 (en) 1998-11-30 1999-11-30 Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate

Publications (1)

Publication Number Publication Date
AU1539900A true AU1539900A (en) 2000-06-19

Family

ID=44693676

Family Applications (1)

Application Number Title Priority Date Filing Date
AU15399/00A Abandoned AU1539900A (en) 1998-11-30 1999-11-30 Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate

Country Status (5)

Country Link
US (2) US6545856B1 (https=)
EP (1) EP1145293A1 (https=)
JP (1) JP4772188B2 (https=)
AU (1) AU1539900A (https=)
WO (1) WO2000033361A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7009240B1 (en) 2000-06-21 2006-03-07 Micron Technology, Inc. Structures and methods for enhancing capacitors in integrated circuits
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
US6781179B2 (en) * 2001-05-30 2004-08-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film
JP3971598B2 (ja) * 2001-11-01 2007-09-05 富士通株式会社 強誘電体キャパシタおよび半導体装置
JP2003332539A (ja) * 2002-05-17 2003-11-21 Nec Electronics Corp 強誘電体キャパシタ及びその製造方法並びに半導体記憶装置
US20040023416A1 (en) * 2002-08-05 2004-02-05 Gilbert Stephen R. Method for forming a paraelectric semiconductor device
US7163828B2 (en) * 2003-03-24 2007-01-16 Seiko Epson Corporation Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device
JP4313797B2 (ja) * 2003-06-06 2009-08-12 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US7119021B2 (en) * 2003-11-07 2006-10-10 Infineon Technologies Ag Ferroelectric capacitor devices and a method for compensating for damage to a capacitor caused by etching
US6872669B1 (en) 2003-12-19 2005-03-29 Texas Instruments Incorporated PZT (111) texture through Ir texture improvement
JP4616830B2 (ja) * 2004-04-28 2011-01-19 富士通株式会社 半導体装置の製造方法
JP4376761B2 (ja) * 2004-11-24 2009-12-02 パナソニック株式会社 容量素子及び半導体記憶装置
JP5140935B2 (ja) * 2006-03-28 2013-02-13 富士通セミコンダクター株式会社 マグネトロンスパッタ成膜装置、及び半導体装置の製造方法
US20070279231A1 (en) * 2006-06-05 2007-12-06 Hong Kong University Of Science And Technology Asymmetric rfid tag antenna
JP5007528B2 (ja) * 2006-06-12 2012-08-22 セイコーエプソン株式会社 圧電素子の製造方法
JP5040231B2 (ja) * 2006-09-21 2012-10-03 富士通セミコンダクター株式会社 半導体装置の製造方法
CN100557737C (zh) * 2006-09-30 2009-11-04 中国科学技术大学 透明外延铁电薄膜电容器及其制备方法
JP5380784B2 (ja) 2007-04-12 2014-01-08 ソニー株式会社 オートフォーカス装置、撮像装置及びオートフォーカス方法
US8154850B2 (en) 2007-05-11 2012-04-10 Paratek Microwave, Inc. Systems and methods for a thin film capacitor having a composite high-k thin film stack
US9522064B2 (en) 2011-05-16 2016-12-20 Hlt, Inc. Inversion delivery device and method for a prosthesis
JP5930852B2 (ja) * 2012-06-04 2016-06-08 株式会社ユーテック 強誘電体結晶膜の製造方法
JP6347085B2 (ja) * 2014-02-18 2018-06-27 アドバンストマテリアルテクノロジーズ株式会社 強誘電体膜及びその製造方法
US10115527B2 (en) 2015-03-09 2018-10-30 Blackberry Limited Thin film dielectric stack
US10297658B2 (en) 2016-06-16 2019-05-21 Blackberry Limited Method and apparatus for a thin film dielectric stack
CN113130498A (zh) * 2021-04-09 2021-07-16 无锡拍字节科技有限公司 一种铁电存储器的结构及其制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234641A (en) * 1988-05-06 1993-08-10 Avx Corporation Method of making varistor or capacitor
JPH04181766A (ja) * 1990-11-16 1992-06-29 Toshiba Corp 電子部品
WO1993021637A1 (en) * 1992-04-13 1993-10-28 Ceram, Inc. Multilayer electrodes for ferroelectric devices
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
JP3224450B2 (ja) * 1993-03-26 2001-10-29 日本酸素株式会社 酸化ルテニウムの成膜方法
JPH06291253A (ja) * 1993-04-07 1994-10-18 Oki Electric Ind Co Ltd 半導体素子の電荷蓄積部の誘電体絶縁膜の形成方法
JPH0799252A (ja) * 1993-06-22 1995-04-11 Sharp Corp 強誘電体膜の製造方法及びそれを用いた半導体装置
JPH0741944A (ja) * 1993-07-27 1995-02-10 Seiko Epson Corp 強誘電体薄膜の製造方法及び誘電体薄膜の製造方法
JPH07172984A (ja) * 1993-12-20 1995-07-11 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法及びその製造装置
JP3247023B2 (ja) * 1994-01-13 2002-01-15 ローム株式会社 誘電体キャパシタ、不揮発性メモリおよびその製造方法
JPH088403A (ja) * 1994-06-17 1996-01-12 Sharp Corp 強誘電体結晶薄膜被覆基板及び該基板を含む強誘電体薄膜素子及び該強誘電体薄膜素子の製造方法
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JPH0945872A (ja) * 1995-07-28 1997-02-14 Olympus Optical Co Ltd 誘電体薄膜素子
JP3504058B2 (ja) * 1996-03-19 2004-03-08 株式会社東芝 薄膜キャパシタおよび半導体記憶装置
JPH09331034A (ja) * 1996-06-07 1997-12-22 Sharp Corp 酸化物電極膜の形成方法
KR100239417B1 (ko) * 1996-12-03 2000-01-15 김영환 반도체 소자의 커패시터 및 그의 제조방법
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
JPH10209392A (ja) * 1997-01-22 1998-08-07 Sony Corp 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
US5923970A (en) * 1997-11-20 1999-07-13 Advanced Technology Materials, Inc. Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure
KR100275726B1 (ko) * 1997-12-31 2000-12-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
US6303490B1 (en) * 2000-02-09 2001-10-16 Macronix International Co., Ltd. Method for barrier layer in copper manufacture

Also Published As

Publication number Publication date
US6643117B2 (en) 2003-11-04
JP2002531943A (ja) 2002-09-24
US20030133250A1 (en) 2003-07-17
WO2000033361A1 (en) 2000-06-08
US6545856B1 (en) 2003-04-08
JP4772188B2 (ja) 2011-09-14
EP1145293A1 (en) 2001-10-17

Similar Documents

Publication Publication Date Title
AU1539900A (en) Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate
EP0747937A3 (en) Substrate covered with a thin ferroelectric layer, method for its production and capacitor structure used therein
EP1318210A3 (en) Method for deposition and etching of a dielectric layer
AU5969998A (en) Semiconductor substrate and method of manufacturing the same
SG49343A1 (en) Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate
AU2001279847A1 (en) Method of growing a thin film onto a substrate
AU2002366860A1 (en) Method and device for depositing crystalline layers on crystalline substrates
EP0721205A3 (en) Method of etching an oxide layer with simultaneous deposition of a polymer layer
EP0972293A4 (en) ELECTRODESTRUCTURE AND METHOD FOR PRODUCING FERROELECTRIC CAPACITOR INTEGRATED ON SILICON
AU5199899A (en) Method and installation for etching a substrate
AU2001279746A1 (en) Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
AU6369498A (en) Ultrasonically coated substrate for use in a capacitor and method of manufacture
AU5952298A (en) Substrate and production method thereof
AU6803300A (en) Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette
AU5520696A (en) A silicon substrate having a recess for receiving an element , and a method of producing such a recess
AU6121294A (en) Desiccant-coated substrate and method of manufacture
EP0747938A3 (en) Substrate covered with a thin ferreoelectric layer, method for its production and capacitor structure used therein
AU2360897A (en) Method of producing opaque adherent coating on the surface of substantially hydrated cemetitious substrate
AU1668999A (en) Double layer capacitor and its manufacturing method
AU5247499A (en) An improved method of planarizing thin film layers deposited over a common circuit base
DE69628505D1 (de) Halbleitendes Substrat und dessen Herstellungsverfahren
SG55315A1 (en) Method of manufacturing bi-layered ferroelectric thin film
AU2003265921A1 (en) Method of forming and/or modifying a dielectric film on a semiconductor surface
AU2002322952A1 (en) Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
AU2002241810A1 (en) Method of patterning a mask on the surface of a substrate and product manufactured thereby

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase