JP4737361B2 - 絶縁膜およびその形成方法 - Google Patents
絶縁膜およびその形成方法 Download PDFInfo
- Publication number
- JP4737361B2 JP4737361B2 JP2003423047A JP2003423047A JP4737361B2 JP 4737361 B2 JP4737361 B2 JP 4737361B2 JP 2003423047 A JP2003423047 A JP 2003423047A JP 2003423047 A JP2003423047 A JP 2003423047A JP 4737361 B2 JP4737361 B2 JP 4737361B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- bis
- insulating film
- acid
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H10P14/683—
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- H10P14/662—
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- H10P14/6682—
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- H10P95/90—
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- H10P14/6342—
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- H10P14/6686—
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- H10P14/6922—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003423047A JP4737361B2 (ja) | 2003-12-19 | 2003-12-19 | 絶縁膜およびその形成方法 |
| PCT/JP2004/018748 WO2005059987A1 (ja) | 2003-12-19 | 2004-12-15 | 絶縁膜およびその形成方法、ならびに膜形成用組成物 |
| KR1020067014379A KR101095746B1 (ko) | 2003-12-19 | 2004-12-15 | 절연막 및 그의 형성 방법, 및 막 형성용 조성물 |
| EP04807107.0A EP1696478A4 (en) | 2003-12-19 | 2004-12-15 | ISOLATION FILM, METHOD FOR THE PRODUCTION THEREOF AND COMPOSITION FOR THE PRODUCTION OF THE FILM |
| TW93139354A TW200531084A (en) | 2003-12-19 | 2004-12-17 | Insulating film, method for forming same and composition for forming same |
| US11/393,647 US20060210812A1 (en) | 2003-12-19 | 2006-03-31 | Insulating film and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003423047A JP4737361B2 (ja) | 2003-12-19 | 2003-12-19 | 絶縁膜およびその形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005183697A JP2005183697A (ja) | 2005-07-07 |
| JP4737361B2 true JP4737361B2 (ja) | 2011-07-27 |
Family
ID=34697339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003423047A Expired - Fee Related JP4737361B2 (ja) | 2003-12-19 | 2003-12-19 | 絶縁膜およびその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20060210812A1 (enExample) |
| EP (1) | EP1696478A4 (enExample) |
| JP (1) | JP4737361B2 (enExample) |
| KR (1) | KR101095746B1 (enExample) |
| TW (1) | TW200531084A (enExample) |
| WO (1) | WO2005059987A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005068541A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 |
| WO2005068539A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜 |
| KR20070010011A (ko) * | 2004-02-26 | 2007-01-19 | 제이에스알 가부시끼가이샤 | 중합체 및 그의 제조 방법, 절연막 형성용 조성물, 및절연막 및 그의 형성 방법 |
| JP5110238B2 (ja) * | 2004-05-11 | 2012-12-26 | Jsr株式会社 | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
| JP5110239B2 (ja) | 2004-05-11 | 2012-12-26 | Jsr株式会社 | 有機シリカ系膜の形成方法、膜形成用組成物 |
| US20080038527A1 (en) * | 2004-05-11 | 2008-02-14 | Jsr Corporation | Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation |
| JP5120547B2 (ja) * | 2006-02-02 | 2013-01-16 | Jsr株式会社 | 有機シリカ系膜およびその形成方法、半導体装置の絶縁膜形成用組成物およびその製造方法、ならびに配線構造体および半導体装置 |
| JP2007273494A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 絶縁膜形成用組成物及び半導体装置の製造方法 |
| JP2007324350A (ja) * | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | 熱処理方法および熱処理装置、ならびに基板処理装置 |
| JP5212591B2 (ja) * | 2006-12-28 | 2013-06-19 | Jsr株式会社 | 積層体、絶縁膜、および半導体装置 |
| EP2123658A4 (en) * | 2007-02-14 | 2012-02-08 | Jsr Corp | MATERIAL FOR FORMING A SILICULAR FILM, AND SILICULAR INSULATING FILM AND METHOD FOR THEIR EDUCATION |
| JP2008243907A (ja) * | 2007-03-26 | 2008-10-09 | Jsr Corp | 導電層間の空洞形成用組成物、導電層間の空洞形成用犠牲膜および導電層間の空洞形成方法 |
| JP5428859B2 (ja) * | 2007-08-08 | 2014-02-26 | 荒川化学工業株式会社 | 鉛フリーハンダフラックス除去用洗浄剤組成物、および鉛フリーハンダフラックスの除去方法 |
| JP5365785B2 (ja) * | 2008-05-30 | 2013-12-11 | Jsr株式会社 | 有機ケイ素化合物の製造方法 |
| KR101293896B1 (ko) | 2008-12-03 | 2013-08-06 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 |
| JP4379637B1 (ja) | 2009-03-30 | 2009-12-09 | Jsr株式会社 | 有機ケイ素化合物の製造方法 |
| JP2011114163A (ja) * | 2009-11-26 | 2011-06-09 | Ube Nitto Kasei Co Ltd | 素子分離材料用塗布液、素子分離材料用塗布液の作製方法、素子分離層用薄膜、素子分離層用薄膜の形成方法、基板、及び、基板の形成方法 |
| JP2018503710A (ja) * | 2014-12-01 | 2018-02-08 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | カルボシランポリマー |
| KR101810892B1 (ko) * | 2016-09-13 | 2017-12-20 | 동우 화인켐 주식회사 | 터치 센서 및 이를 포함하는 터치 스크린 패널 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US259404A (en) * | 1882-06-13 | Electro-magnetic motor | ||
| US275544A (en) * | 1883-04-10 | tetamoee | ||
| US288629A (en) * | 1883-11-20 | Housing and insulation of electrical wires underground | ||
| US274948A (en) * | 1883-04-03 | la farge | ||
| US288634A (en) * | 1883-11-20 | Spring-vehicle | ||
| JP3813268B2 (ja) * | 1996-03-25 | 2006-08-23 | 触媒化成工業株式会社 | 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材 |
| JP3997494B2 (ja) * | 1996-09-17 | 2007-10-24 | ソニー株式会社 | 半導体装置 |
| US6318124B1 (en) * | 1999-08-23 | 2001-11-20 | Alliedsignal Inc. | Nanoporous silica treated with siloxane polymers for ULSI applications |
| US6472076B1 (en) * | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
| US6761975B1 (en) * | 1999-12-23 | 2004-07-13 | Honeywell International Inc. | Polycarbosilane adhesion promoters for low dielectric constant polymeric materials |
| JP3604007B2 (ja) * | 2000-03-29 | 2004-12-22 | 富士通株式会社 | 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法 |
| JP2001287910A (ja) * | 2000-04-04 | 2001-10-16 | Asahi Kasei Corp | 多孔質ケイ素酸化物塗膜の製造方法 |
| TW524883B (en) * | 2000-05-22 | 2003-03-21 | Jsr Corp | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film |
| JP2003100738A (ja) * | 2001-09-25 | 2003-04-04 | Jsr Corp | 積層体、積層体の形成方法、絶縁膜ならびに半導体用基板 |
| JP3886779B2 (ja) * | 2001-11-02 | 2007-02-28 | 富士通株式会社 | 絶縁膜形成用材料及び絶縁膜の形成方法 |
| JP2003273100A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6809041B2 (en) * | 2002-07-01 | 2004-10-26 | Rensselaer Polytechnic Institute | Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane |
| JP2004158606A (ja) * | 2002-11-06 | 2004-06-03 | Fujitsu Ltd | 半導体装置および半導体装置の製造方法 |
| US7462678B2 (en) * | 2003-09-25 | 2008-12-09 | Jsr Corporation | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film |
| EP1615260A3 (en) * | 2004-07-09 | 2009-09-16 | JSR Corporation | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device |
| JP4355939B2 (ja) * | 2004-07-23 | 2009-11-04 | Jsr株式会社 | 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法 |
-
2003
- 2003-12-19 JP JP2003423047A patent/JP4737361B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-15 WO PCT/JP2004/018748 patent/WO2005059987A1/ja not_active Ceased
- 2004-12-15 KR KR1020067014379A patent/KR101095746B1/ko not_active Expired - Fee Related
- 2004-12-15 EP EP04807107.0A patent/EP1696478A4/en not_active Withdrawn
- 2004-12-17 TW TW93139354A patent/TW200531084A/zh not_active IP Right Cessation
-
2006
- 2006-03-31 US US11/393,647 patent/US20060210812A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005183697A (ja) | 2005-07-07 |
| TW200531084A (en) | 2005-09-16 |
| TWI380323B (enExample) | 2012-12-21 |
| EP1696478A1 (en) | 2006-08-30 |
| KR20060127058A (ko) | 2006-12-11 |
| US20060210812A1 (en) | 2006-09-21 |
| EP1696478A4 (en) | 2014-08-27 |
| KR101095746B1 (ko) | 2011-12-21 |
| WO2005059987A1 (ja) | 2005-06-30 |
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