Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
• • H10P14/683—
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
  • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
  • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• • H10P14/6342—
• • H10P14/662—
• • H10P14/6682—
• • H10P14/6686—
• • H10P14/6922—
• • H10P95/90—
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
  • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
  • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
  • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
  • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
  • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
  • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31652—Of asbestos
  • Y10T428/31663—As siloxane, silicone or silane

Definitions

• Insulating film method for forming the same, and film forming composition
• the present invention relates to a method of forming an insulating film, and more particularly, to an insulating film that can be suitably used as an interlayer insulating film or the like in a semiconductor element, a method of forming the same, and a composition for forming a film.
• CVD Chemical Vapor
• silica (Si ⁇ ⁇ ⁇ ) film formed by vacuum process such as
• a low-k insulating film typified by a polysiloxane insulating film is formed as a layer forming a via to form a trench.
• an organic insulating film which is a Low_k insulating film, may be formed.
• the reactive ion etching is performed using a gas such as N
• An object of the present invention is to be suitably used in semiconductor devices and the like where high integration and multi-layering are desired, has a low relative dielectric constant, and is suitable for processes such as etching, ashing or wet cleaning. It is an object of the present invention to provide a forming method and an insulating film capable of forming an insulating film excellent in resistance and the like.
• Another object of the present invention is to provide a composition for film formation which can be suitably used for a method of forming a powerful insulating film.
• a method of forming an insulating film according to the present invention is
• a method of forming an insulating film comprising the steps of: forming a polycarbosilane insulating film on the polysiloxane insulating film; and forming an organic insulating film on the polycarbosilane insulating film
• the polysiloxane insulating film is
• R represents a hydrogen atom, a fluorine atom or a monovalent organic group
• R 1 represents a monovalent organic group
• a represents an integer of 1 to 2).
• R 2 represents a monovalent organic group
• R 3 R 6 is the same or different, and the monovalent organic group, b and c are the same or different, each represents a number of 0-2 and R 7 is an oxygen atom, a phenylene group or-( CH)-represented by
• the polycarbosilane insulating film is
• the coating film is formed by heating.
• R 8 R R 11 are the same or different and each represents a hydrogen atom, a halogen atom, a hydroxyl group, an anorexocyl group, a sulfone group, a methanesulfone group, a trifluoromethanesulfone group, or a monovalent organic group
• R 12 — R 14 is the same or different, and represents a substituted or unsubstituted alkylene group, an alkenylene group, an anolequininole group, an arylene group, etc.
• x, y, zf an integer of 1 to 10, 000, 10 x x y The condition of + z 20000.
• the insulating film according to the present invention is
• An insulating film comprising: a polycarbosilane insulating film formed on the polysiloxane insulating film; and an organic insulating film on the polycarbosilane insulating film, wherein the polysiloxane insulating film Is
• R represents a hydrogen atom, a fluorine atom or a monovalent organic group
• R 1 represents a monovalent organic group
• a represents an integer of 1 to 2).
• R 2 represents a monovalent organic group
• R 3 RR 6 is the same or different, and the monovalent organic group, b and c are the same or different, each represents a number of 0-2 and R 7 is an oxygen atom, a phenylene group or- (CH)-represented by
• the polycarbosilane insulating film is
• a polycarbosilane mixture represented by the following general formula (4) is dissolved in a solvent, and a solution obtained is coated, and then the coating is formed by heating.
• R 8 R R 11 are the same or different and each represents a hydrogen atom, a halogen atom, a hydroxyl group, an anorexocyl group, a sulfone group, a methanesulfone group, a trifluoromethanesulfone group, or a monovalent organic group
• R 12 — R 14 is the same or different, and represents a substituted or unsubstituted alkylene group, an alkenylene group, an anolequininole group, an arylene group, etc.
• x, y, zf an integer of 1 to 10, 000, 10 x x y The condition of + z 20000.
• composition according to the present invention is a film-forming composition for a polycarbonate-based insulating film used in the method for forming an insulating film of the present invention
• R 8 R 11 are the same or different and each represents a hydrogen atom, a halogen atom, a hydroxyl group, an acyloxyl group, a sulfone group, a methanesulfone group, a trifluoromethanesulfone group, a monovalent organic group, 12 — R 14 is the same or different, and is a substituted or unsubstituted alkylene group, an al It shows a keninole group, an anorechininole group, an arylene group.
• a polycarbosilane insulating film is formed after forming a polysiloxane insulating film which is a so-called low-k film, thereby forming an organic insulating film.
• RIE reactive ion etching
• the influence of etching is not directly applied to the polysiloxane insulating film, and therefore, the polysiloxane insulating film may not be damaged.
• the polycarbosilane-based insulating film inserted between the polysiloxane-based insulating film and the organic-based insulating film is unlikely to be affected by the insulating property and mechanical strength which are not damaged even when exposed to plasma.
• the insulating film of the present invention may further have another insulating film, as long as it contains a polysiloxane insulating film, a polycarbosilane insulating film and an organic insulating film.
• the insulating film of the present invention has a low relative dielectric constant and is excellent in process resistance, and thus can be suitably used, for example, as an interlayer insulating film of a semiconductor element. In particular, it can be suitably used also in the formation of a wiring layer having a dual damascene structure.
• the method of forming an insulating film according to the present invention comprises the steps of: forming a polysiloxane insulating film on a substrate; and forming a polycarbosilane insulating film on the polysiloxane insulating film. And forming an organic insulating film on the polycarbosilane insulating film.
• coating film refers to a film formed by applying a composition for film formation on a substrate and removing an organic solvent.
• component (A) Component for forming a polysiloxane insulating film
• the component (A) is represented by the following general formula (1): A compound (hereinafter referred to as "compound 1"), a compound represented by the following general formula (2) (hereinafter referred to as “compound 2”, and a compound represented by the following general formula (3) It is a polysiloxane compound obtained by hydrolytic condensation of at least one silane compound selected from the group of “compound 3” and “(3)” and “(3)”.
• the component (A) when the component (A) is referred to, the case where the polysiloxane compound is dissolved or dispersed in an organic solvent is also included.
• R represents a hydrogen atom, a fluorine atom or a monovalent organic group
• R 1 represents a monovalent organic group
• a represents an integer of 1 to 2).
• R 2 represents a monovalent organic group
• R 3 R 6 is the same or different, and the monovalent organic group, b and c are the same or different, each represents a number of 0-2 and R 7 is an oxygen atom, a phenylene group or-( CH)-represented by
• Examples of the monovalent organic group represented by R and R 1 in the general formula (1) include an alkyl group, a aryl group, an aryl group and a glycidyl group.
• the monovalent organic group of R 1 is particularly preferably an alkyl group or a phenyl group.
• examples of the alkyl group include a methyl group, an ethyl group, a propyl group and a butyl group, preferably having 1 to 5 carbon atoms, and these alkyl groups may be in the form of a chain or branched.
• the hydrogen atom may be further substituted by a fluorine atom or the like.
• examples of the aryl group include phenyl group, naphthyl group, methyl phenyl group, ethyl phenol group, chlorophenyl group, bromophenyl group, fluorophenyl group and the like.
• the compound 1 examples include methyltrimethoxysilane, methyltriethoxysilane, methyltri- n-propoxysilane, methyltriisopropoxysilane, methyltri- n-butoxysilane, methyltri-sec-butoxysilane, and methyltri-tert.
• ert-Butynolegexysilane Di! ert-butyl n-propoxysilane, di-tert-butyldiisopropoxysilane, di-tert-butyl di-n-butoxysilane, di-tert-butyl di-sec-butoxysilane, di-tert-butyl di-tert-butoxysilane, Di-tert-butyl di-phenoxysilane, di-diphenyldimethoxysilane, di-phenyl-diethoxysilane, di-phenyl di-i-propoxy silane, diphenyl-diisopropoxy silane, di-phenyl di-n-propoxysilane, di-phenyl di-n-butoxysilane, di-phenyl di-secoxy silane, di-phenyl di-isopropoxy silane Ruji tert- butoxysilane, Jifue two Le Ziv Enok
• Particularly preferred compounds as Compound 1 are methyltrimethoxysilane, methyltriethoxysilane, methyltriol ⁇ _propoxysilane, methyltriol iso_propoxysilane, methyltriethoxysilane Toxisilane, Etritriethoxysilane, Buretrimethoxysilane, Buretriethoxysilane, Phenyltrimethoxysilane, Phenyltriethoxysilane, Dimethyldimethoxysilane, Dimethyljetoxysilane, Jetyldimethoxysilane, Jetyldiethoxysilane , Diphenyldimethoxysilane, diphenyljetoxysilane, tetramethoxysilane, tetramethoxysilane, tetraethoxysilane, tetra_n-propoxysilane, tetra-iso_propoxysilane, tetra-n-but
• Examples of the monovalent organic group represented by R 2 in the general formula (2) include the same groups as those exemplified for the general formula (1).
• compound 2 examples include tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane, tetra-n-butoxysilane, tetra-sec-butoxysilane, tetra-tert-butoxysilane, and tetra-tert-butoxysilane.
• Phenoxysilane and the like can be mentioned, and as a particularly preferable compound, tetramethoxysilane and tetraethoxysilane can be mentioned. These may be used alone or in combination of two or more.
• hexamethoxydisilane, hexetoxydisilane, 1,1,2,2-tetramethoxy-1,2-dimethyldisilane, 1,1,2,2-tetraethoxy-1,2,2- Dimethyldisilane, 1,1,2,2-tetramethoxy-1,2,2-diphenyldisilane, 1,2-dimethoxy-1,1,2,2-tetramethyldisilane, 1,2-diethoxy-1,1,2 , 2-Tetramethyldisilane, 1, 2-Dimethoxysilane 1, 1, 2, 2-Tetraphenynodisilane, 1, 2-Diethoxy-1, 1, 2, 2-Tetraphenyldisilane, etc. are listed as preferred examples. be able to.
• (Trimethoxysilylene) methane bis (triethoxysilylene) methane, bis (tri-n-propoxysilyl) methane, bis (tri-iso-propoxysilyl) methane, bis (tri-n-butoxysilyl) methane, bis ( (Tri-sec-butoxysilylene) methane, bis (tri-tert-butoxysilylene) methane, 1,2-bis (trimethoxysilyl) ethane, 1,2-bis (triethoxysilyl) ethane, 1,2-bis (triethoxy) n-propoxy cilinole) ethane, 1, 2- bis (tree iso-propoxy cilinole) ethane, 1, 2- bis (tri- n- butoxy cilinole) ethane, 1, 2- bis (tri- sec- butoxy cilinole) 1- (Dimethoxymethylsilyl)-1- (trimethoxysilyl) methane,
• bis (trimethoxysilyl) methane bis (triethoxysilyl) methane, 1,2-bis (trimethoxysilylene) atane, 1,2-bis (triethoxysilylene) atane, 1- (Dimethoxymethylsilyl) _1- (trimethoxysilyl) methane, 1- (diethoxymethylsilyl) _1_ (triethoxysilyl) methane, 1- (dimethoxymethylsilyl) -2- (trimethoxysilyl) ethane, 1_ (1 Jetoxymethylsilyl) _2- (triethoxysilyl) ethane, bis (dimethoxymethylsilyl) meta
• the above compounds 1 to 3 may be used alone or in combination of two or more.
• Compound 1 one 3 compound represented by hydrolysis, when causing partial condensation, the general formula (1) i (3) in 1 ⁇ ⁇ -, R 2 0-, R 4 ⁇ - and R 5 0 It is preferable to use 0.3 to 10 moles of water per mole of the group represented by When the above-mentioned siloxane compound is a condensation product, the polystyrene conversion weight average molecular weight is 500 to 10, 0000. Force S preferred.
• the completely hydrolyzed condensate refers to 100% hydrolysis of the group represented by 1 ⁇ 01, R 2 0-, R 4 0-and R 5 0-in the siloxane compound component and OH group. It shows the one completely condensed.
• the component (A) may optionally contain a catalyst.
• the catalyst include organic acids, inorganic acids, organic bases, inorganic bases, metal chelates and the like.
• organic acid examples include acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methylmalonic acid, adipic acid, sebacine Acid, gallic acid, butyric acid, melittic acid, malachic acid, mykimic acid, 2-ethylhexanoic acid, oleic acid, stearic acid, linoleic monooleic acid, linoleic acid, salicylic acid, Aromatic acid, ⁇ -aminobenzoic acid, p-toluenesulfonic acid, benzenesulfonic acid, monochloroacetic acid, dichloroacetic acid, trichloroacetic acid, trifuro reoacetic acid, formic acid, malonic
• Examples of the inorganic acid include hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid.
• ammonia sodium hydroxide, potassium hydroxide, barium hydroxide, calcium hydroxide etc. can be mentioned, for example.
• organic base for example, methanolamine, ethanolamine, propanolamine, butanolamine, N_methylmethanolamine, N-ethylmethanolamine, N-propylmethanolamine, N— Butylmethanolamine, N_methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, N-methylpropanolamine, N-ethylpropanolamine N-Propylpropanolamine, N-Butylpropanolamine, N-Methylbutanolamine, N-Ethylbutanol Noleamine, N-Propylbutanolamine, N-Butyl butanolamine, N, N-Dimethylmethanolamine , N, N-jetylmethanolamine, N, N-dipropylmethanolamine, N, N-di- Tylmethanolamine, N, N-Dimethylethanolamine, N, N-Getylethanolamine
• metal chelates include triethoxy mono (acetyl acetonato) titanium, tri- n -propoxy mono (acetylacetonato) titanium, tri-i-i-proboxy mono (acetenolatethertonato) titanium, tri-n--Butoxy.mono (acetyl assetonato) titanium, tri-sec-butoxy'mono (acetyl assetonato) titanium, tri-t mono-butoxy'mono (acetyl acetonato) titanium, diethoxy'bis (acetylacetonate) ) Titanium, di _ n propoxy 'bis ( (Acetyl Assertato) Titanium, Ze-i-Proboxy.
• composition 1 Film-forming composition for forming a polysiloxane insulating film (hereinafter referred to as “composition 1
• hydrolytic condensation condensation of at least one silane compound selected from the above-mentioned compounds 1 to 3 in the presence of the above-mentioned catalyst, water and an organic solvent described later is carried out.
• This hydrolytic condensation is usually carried out at 20 to 180 ° C for 10 to 48 hours, preferably at 30 to 150 ° C for 10 to 24 hours.
• the reaction is carried out in an open or closed vessel under a pressure of usually about 0.5-3 MPa.
• the total solid content concentration of the composition 1 thus obtained is preferably 0.5% by weight, and may be appropriately adjusted according to the purpose of use.
• the total solid concentration of the composition for film formation of the present invention is 0.5 to 30% by weight, the film thickness of the insulating film is in an appropriate range, and the storage stability is also more excellent.
• the adjustment of the total solid concentration can be carried out by concentration and dilution with an organic solvent, if necessary.
• the pH of the final composition is preferably adjusted to 7 or less.
• Examples of the method of adjusting the pH include the following methods (I) and (V).
• a method of removing hydroxylated tetraalkyl ammonium out of the system by extraction or washing may, for example, be mentioned. Each of these methods may be used in combination.
• pH adjusters that can be used in the method (I) include inorganic acids and organic acids.
• inorganic acid examples include hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, phosphoric acid, boric acid and oxalic acid.
• examples of the organic acid include acetic acid, propionic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, oxalic acid, maleic acid, methyl malonic acid, Adipic acid, sebacic acid, gallic acid, butyric acid, meritic acid, arabic acid, shikimic acid,
• a hydrolyzate, a hydrolyzate of maleic anhydride, a hydrolyzate of phthalic anhydride and the like can be mentioned.
• the pH of the film-forming composition is adjusted to 7 or less, preferably to 16.
• the effect of improving the storage stability of the composition to be obtained can be obtained by adjusting the pH to the above range with the above-mentioned pH adjuster.
• the amount of pH adjuster used is such that the pH of the composition falls within the above range, and the amount used is
• hydrolysis condensation can be performed in the presence of an organic solvent.
• the organic solvent includes at least one selected from the group consisting of alcohol solvents, ketone solvents, amide solvents, ester solvents and aprotic solvents.
• alcohol solvents methanol, ethanol, n-propanol, i-propanol, n-butanol, i-butanol, see-butanol, t-butanol, n_pentanol, i-pentanol , 2-methyl butanol, sec-pentanol, t-pentanol,
• These alcohol solvents may be used alone or in combination of two or more.
• ketone solvents include acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl- n-butyl ketone, jetyl ketone, methyl-ol i-butyl ketone, methyl-ol n-pentyl-en ketone, ethyl y-n-butyl-ketone, methyl-l- ketone Hexyl ketone, di-i-butyl ketone, trimethinolenonanone, cyclohexanone, 2 _ hexanone, methyl cyclohexanone, 2, 4- pentane diaceton, acetoninole acetone, acetophenone, fencen, etc.
• ketone solvents may be used alone or in combination of two or more.
• amide solvents examples include honolemamide, N-methylformamide, N, N-dimethylformamide, N-ethylformamide, N, N- jetylformamide, acetoamide, N-methyoleracetamide, N, N-dimethylformamide Acetoamide, N-Ethylacetoamide, N, N-Getylacetamide, N-Methylpropionamide, N-Methylpyrrolidone, N-Formylmorpholine, N-Formylpiperidine, N-Formylpyrrolidine, N-Acetyl Morpholine, N-acetyl piperidine, N-acetyl pyrrolidine and the like can be mentioned.
• amide solvents may be used alone or in combination of two or more.
• ester solvents may be used alone or in combination of two or more.
• non-proton solvents include acetonitrile, dimethyl sulfoxide, N, N, ⁇ ', ⁇ '-tetraethynolesolefamide, hexamethyl phosphate triamide, ⁇ ⁇ -methyl morpholine, ⁇ -methyl pyrrolone, and ⁇ -etylvirol.
• ⁇ -Methyl- ⁇ 3_pyrroline ⁇ -methylpiperidine, ⁇ -etyl piperidine, ⁇ , ⁇ -dimethylpiperazine, ⁇ -methylimidazole, ⁇ -methyl-4-piperidone, ⁇ -methyl-2-pipe Ridone, ⁇ ⁇ -methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 1,3-dimethyltetrahydro12 (1H) -pyrimidinone and the like can be mentioned.
• aprotic solvents may be used alone or in combination of two or more.
• organic solvents are particularly preferred.
• the above organic solvents can be used alone or in combination of two or more.
• the polysiloxane insulating film can be formed by applying the composition 1 to a substrate, removing the solvent, and curing the coating by heating.
• the film thickness should be about 0.01-1.5 / m as a dry film thickness and about 0 ⁇ 02-3 ⁇ m as a two-time film thickness. Can.
• the coating can be dried by heating generally at a temperature of about 60 to 600 ° C. for about 1 to 240 minutes.
• a hot plate, an oven, a furnace or the like can be used as a heating method, and the heating atmosphere may be atmosphere, nitrogen atmosphere, argon atmosphere, vacuum, reduced pressure with controlled oxygen concentration, or the like. It can be done.
• the coating film can also be formed by irradiation with an electron beam or ultraviolet light, which is preferable in that the drying time can be shortened.
• the component (B) is a polycarbosilane compound (hereinafter sometimes referred to as “compound 4”) represented by the following general formula (4).
• compound 4 a polycarbosilane compound represented by the following general formula (4).
• the polyfluorosilane compound is dissolved or dispersed in an organic solvent.
• one R 11 represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkoxyl group, a sulfone group, a methanesulfone group, a trifluoromethanesulfone group, or a monovalent organic group.
• the monovalent organic group the same groups as those exemplified for the compound (1) can be mentioned. Further, R 8 to R 11 may be the same or different groups.
• R 12 R 14 represents a substituted or unsubstituted alkylene group, an alkenyl group, an alkynyl group or an arylene group. Further, R 8 to R 11 may be the same or different groups.
• alkylene group examples include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group and the like.
• the alkenyl group may, for example, be a vinylene group or a propenylene group.
• alkynyl group examples include ethenylene group.
• Examples of the alanole group include a phenyl group and a naphthylene group.
• polycarbosilane-based compound examples include polyarylolehydridocane levosilane, polydimethyl carolose silane, polydimethoxycarbosilane, polymethylhydridocarbosilane, polyhydrocarbosilane and the like.
• composition 2 In the method for producing a film-forming composition for forming a polycarbosilane-based insulating film (hereinafter, also referred to as “composition 2”), it can be obtained by dissolving the above-mentioned compound 4 in a solvent.
• the total solid content concentration of composition 2 obtained in this manner is preferably 0.1 to 25% by weight, and is appropriately adjusted according to the purpose of use.
• the total solid concentration of the composition 2 is in the above range, the film thickness of the insulating film is in an appropriate range, and the storage stability is also more excellent.
• the adjustment of the total solid concentration can be carried out by concentration and dilution with an organic solvent, if necessary.
• the proportion of the composition 2 is preferably 0.1 to 20% by weight of the polycarbosilane compound and 99.9 to 80% by weight of the solvent.
• the proportion of the polycarbosilane compound is in this range, the composition obtained can be made a composition suitable for application by spin coating.
• Composition 2 can optionally contain additives such as surfactants, ⁇ modifiers, leveling agents and the like.
• Examples of the organic solvent for preparing the composition 2 include ketone solvents, ester solvents, alcohol solvents, aromatic solvents and the like.
• ketone solvents examples include acetone, methyl ethyl ketone, methyl ⁇ ⁇ ⁇ propyl ketone, methanole ⁇ -butyl ketone, jetyl ketone, methinole i-butyl ketone, methyl n-pentyleno ketone, ethyl n-butyl ketone, methyl n-hexyl ketone, di-methyl ketone
• alcohol solvents include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monohexyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether Glyconylene mono-2-ethinolebuti / leate / le, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, propylene glycol monomethyl ether, propylene glycol mono Ethyl ether, propylene glycol monopropyl ether, propylene Glycol monobutyl ether, dipropylene glycol mono-methylol Nore
• aromatic solvents examples include benzene, toluene, xylene, mesitylene and the like.
• surfactant examples include nonionic surfactants, anion surfactants, cationic surfactants, amphoteric surfactants and the like, and further fluorine surfactants, silicone surfactants, Polyalkylene oxide surfactant, poly (meth) Atarilate surfactants and the like can be mentioned, with preference given to fluorine surfactants and silicone surfactants.
• fluorine-based surfactant examples include, for example, 1,1,2,2-tetrafluoro (butyl) (1,1,2,2- (2-tetrafluoropropione) ether, 1,1,2,2-tetra Fluoroctoxyl hexyl ether Nore, kacta ethylene glycol di (1,1,2,2,2-tetraflourobutynore) ether, hexacetylene glycol (1,1,2,2,2,3,3 _ hexafro uro pentinole ) Ether, Kocta propylene glycol di (1,1,2,2,2- tetrafluoro-butynore) ether, Hexapropylene glycol (1,1,2,2,2,3,3 _ Hexa- fluoropentenole) ethenole, Perflo Sodium lododecinores norephonate, 1, 1, 2, 2, 2, 8, 8, 9, 9, 10, 10-decaft rhododecane, 1, 1, 2, 2, 2, 2,
• silicone surfactant for example, SH7PA, SH21PA, SH30PA, ST94PA (a reed, a shift is also from Toray 'Dow Coun Ying' silicone Co., Ltd.) and the like can be used.
• SH28PA and SH30PA are particularly preferable.
• the amount of surfactant used is usually 0.000-1 part by weight per 100 parts by weight of component (B). It is a department.
• a leveling agent may be contained.
• the polycarbosilane insulating film is formed by applying the composition 2 described above onto the polysiloxane insulating film described in 1. 3., removing the solvent, and heating and curing the coating. it can.
• Examples of the method of applying composition 2 include spin coating, dicing, roller blade, spraying, scan coating, and slit die coating.
• the film thickness of the polycarbosilane insulating film is lower than that of the polycarbosilane insulating film when the organic insulating film formed on the polycarbosilane insulating film is etched by, eg, RIE. It is sufficient that the position of the polysiloxane insulating film is not damaged by the etching. Taking this point into consideration, the film thickness of the polycarbosilane insulating film is, for example, preferably 0.5 to 100 nm, more preferably 1 to 1 nm as a dry film thickness. In order to form a polycarbosilane insulating film having a desired film thickness, for example, the viscosity of the composition 2 may be adjusted, or the number of times of application may be appropriately selected.
• Heating of the coating film for curing is preferably performed at a temperature suitable for three-dimensional crosslinking of the polycarbosilane compound by polymerization, preferably 60 ° C or more, more preferably It is preferably performed at a temperature of about 80-600 ° C.
• the heating time is not particularly limited, but is usually about 1 minute to 240 minutes.
• a hot plate, an oven, a furnace, etc. can be used as a heating method of a coating film,
• the heating atmosphere is under atmosphere, under nitrogen atmosphere, under argon atmosphere, under vacuum, under reduced pressure controlled oxygen concentration. It can be done below.
• the organic insulating film of the present invention is a film mainly composed of at least one selected from a polyarylene, a polyarylene ether, a polyoxazoline, and a polymer having a polybenzocyclobutene skeleton.
• R 8 to R 12 each independently represent a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 120 carbon atoms, or a aryl group
• X represents CCQQ ′ ((wherein, Q and Q ′ are the same or different and each represent a halogenated alkyl group, an alkyl group, a hydrogen atom, a halogen atom, or an aryl group At least one member selected from the group consisting of a group represented by) and a fluorenylene group, Y being one, one, CO, one C, one, one CONH, one, one S, one SO, and one Group of dilen groups
• R 14 R 15 R 2. and R 21 independently represent a single bond, ———————————————————————————————————————————————————————————————————————————————————————————————
• R lb R 1 S R 19 and R 24 independently represent a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 120 carbon atoms, or an aryl group And k represents an integer of 0-3, 1 represents an integer of 2-3, and t 1 z independently represents an integer of 0-4. ) [Formula 12]
• R 13, R 13 ' represents at least one group selected from the group of aromatic groups represented by hydrogen atom or the following general formula (12) and (13), W 1 And W 2 each represent at least one group selected from the group consisting of divalent aromatic groups represented by the following general formulas (14) and (15).
• R 25 represents a halogen atom, a hydrocarbon group having 120 carbon atoms, a halogenated alkyl group, an alkoxyl group having 120 carbon atoms, a phenoxy group or an aryl group Show, m 'represents an integer of 0 5 and n' represents an integer of 0 7) [Formula 15]
• R 25 is a halogen atom, a hydrocarbon group having 120 carbon atoms, a halogenated alkyl group, an alkoxyl R 120 group having 120 carbon atoms, a phenoxy group or R 26 represents a reel group, and R 26 represents a single bond, — ⁇ —, —CO— -CH— — COO— — CONH—, — S
• Phenyl methylidene group methyl phenyl methylidene group, trifluoromethyl methy P R methylidene group, trifluoromethyl phenyl methylidene group, fluorenylene group, or formula
• R 7 independently represents a hydrogen atom, a hydrocarbon group having 1 to 14 carbon atoms, or a phenyl group, and al a2 is independently an integer of 0 to 4 And a3 represents an integer of 0-6.
• n is an integer of 2-1000
• X is selected from the formula (17)
• Y is selected from the formula (18) or the formula (19).
• X 1 represents a structure selected from the following formula, and at least one of hydrogen atoms on a benzene ring in these structures is a methyl group, an ethyl group, a propyl group or It may be substituted by a monovalent organic group selected from the group consisting of a group, a butyl group, an isobutyl group, a t-butyl group and a phenyl group.
• composition 3 The composition for film formation (hereinafter referred to as “composition 3”) for an organic insulating film is (5) It is obtained by dissolving or dispersing at least one selected from the polymers represented by one (7), (11) and (16) in a solvent.
• composition 3 The composition for film formation (hereinafter referred to as “composition 3”) for an organic insulating film is (5) It is obtained by dissolving or dispersing at least one selected from the polymers represented by one (7), (11) and (16) in a solvent.
• the polymer (compound 5) represented by the general formula (5) is produced, for example, by polymerizing the compound 20 represented by the following general formula (20) as a monomer in the presence of a catalyst system containing a transition metal compound. Can be manufactured.
• R 8 and R 9 each independently represent a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 120 carbon atoms, an arylone group, or a halogen atom
• X is represented by —C QQ′— (wherein Q and Q ′ may be the same or different and each represents a halogenated alkyl group, an alkyl group, a hydrogen atom, a halogen atom or a aryl group) Group and fluorenylene group power, at least one selected from the group powers, o and p each represents an integer of 0 4 and Z represents an alkyl group, a halogenated alkyl group or a aryl group)
• Q and Q ′ constituting X in the above general formula (20) as an alkyl group, a methyl group, an ethyl group, an i-propyl group, an n-propyl group, a butyl group, a pentyl group, As a halogenated alkyl group, a trifluoromethyl group, a pentafluoroethyl group, etc .; As a aryl alkyl group, a benzyl group, a diphenyl methyl group etc .; As a aryl group, a phenyl group, biphenyl etc. Groups, tolyl groups, pentafluorophenyl groups and the like can be mentioned.
• X in the said General formula (20) The bivalent group shown to following General formula (21)-(26) is preferable. Among these, the fluorenylene group represented by the general formula (26) is more preferable.
• the compound 20 (monomer) represented by the above general formula (20) include, for example, 2.2-bis (4-methylsulfodioxyphenyl) hexafluoropropane, bis (4-methylsulfonyloxyphenone) methane Bis (4-methylsulfodioxyfininone) diphenylmethane, 2,2 bis (4 methylsulfoyloxy _3 methylpheniole) hexafluoropropapan, 2,2 bis (4-methylsulfonioxy _3 prope Julfe cinole) Hexafluo propane, 2, 2-bis (4-methyl sulfo di-port x- 3, 5- dimethyl furan di) hexafluoropropane, 2, 2- bis (4-methyl sulfonioxy phe inole) propane, 2, 2- Bis (4-methylsulfo 2-port xylose 3-methylphenylenole) propane, 2, 2-bis (4-methinole sul
• R 10 and R 11 each independently represent a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 120 carbon atoms, a aryl group, or a halogen atom
• R 33 , R 3 4 is -OSO Z (wherein Z is an anolequinole group, a halogenated alkyl group or a aryl group
• Chlorine atom is a group power of 1 o -c o--coo -CONH- -S -SO 2 and phenylene group; at least one selected
• E represents 0 or 1
• q and r represent integers of 0 and 4, respectively.
• a halogen atom and the like are as a halogen atom and a halogen atom, and as a monovalent organic group, a methyl group, an ethyl group and the like as an alkyl group, As a phenyl aryloquinole group, a trifluoromethyl group, a pentafluoroethyl group, etc., as a aryl group, a propenyl group, such as a propenyl group, and a phenyl group, a pentafluorophenyl group, etc., as an aryl group Force S can.
• Z constituting an OSO Z in R 33 and R 34 is an alkyl group
• a halogenated alkyl group such as a methylol group or an ethyl group, a trifluoromethyl group such as a trifluoromethyl group, and a phenyl group, a p-tolyl group, a p-fluorophenyl group or the like as an aryl group can be used.
• Examples of the compound represented by the above general formula (27) include 4,4′-dimethylsulfoyloxy biphenyl, 4,4′-dimethylsulfo bi-ported oxy-3,3′-dipropenylbiphenyl, 4 4,4'-Dibromobiphenyl, 4,4'-Jodobiphenyl, 4,4'-Dimethylsulfodioxy _3,3'-Dimethylbiphenyl, 4,4'-Dimethylsulfo Two-Chain X, 3, 3 '-Difluorobiphenyl, 4, 4'_ Dimethylsulfoyloxy _3, 3', 5, 5'- Tetrafluorobiphenyl, 4, 4 '_ Dibromooctofluorobiphenyl, 4, 4-Methylsulfophenyl Two-ported sicoxafluorobiphenyl, 3,3'-diaryl-4,4'-bis (4-fluorobenzenes
• R 12 represents a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an anolekicininole group having 120 carbon atoms, an alanole group, or a halogen atom
• R 35 and R 36 represent One hundred S o Z (here
• 2 and Z represents an alkyl group, a halogenated alkyl group or a aryl group. And chlorine atom, bromine atom or iodine atom, and s represents an integer of 0-4.
• R 12 as a halogen atom, as a halogen atom as R 12 , as a monovalent organic group, as an alkyl group, a methyl group, an ethyl group such as a methyl group or an ethyl group,
• triaryl groups such as trifluoromethyl group, pentafluoroethyl group, etc.
• a phenyl group, a pentafluorophenyl group, etc. can be mentioned as an alinole group such as a phenyl group.
• Z which comprises _OSO Z in R 35 and R 36 it is as an alkyl group
• halogenated alkyl group such as methylol group and ethyl group, and trifluoromethyl group
• aryl group examples include phenyl group, p-tolyl group and p-fluorophenyl group.
• Examples of the compound represented by the above general formula (28) include o-dichlorobenzene.
• the catalyst used in the production of compound 5 is preferably a catalyst system containing a transition metal compound, and as this catalyst system, (I) a transition metal salt and a ligand, or a ligand coordinated
• the “transition metal” (salt) and ( ⁇ ) reducing agent may be essential components, and “salt” may be added to increase the polymerization rate.
• the transition metal salt nickel compounds such as sodium chloride, nickel nitrate, nickel bromide, nickel oxide such as nickel acetylacetonate, palladium compounds such as palladium chloride, palladium bromide, palladium iodide, etc.
• iron compounds such as iron chloride, iron bromide and iron iodide
• cobalt compounds such as cobalt chloride, cobalt bromide and cobalt iodide.
• iron compounds such as iron chloride, iron bromide and iron iodide
• cobalt compounds such as cobalt chloride, cobalt bromide and cobalt iodide.
• sodium chloride and nickel bromide particularly preferred are sodium chloride and nickel bromide.
• examples of the ligand include triphenyl phosphine, 2,2,1 bibilysine, 1,5-cyclooctadiene, 1,3-bis (diphenylphenyl) propane and the like. Phosphine, 2, 2-viviridine is preferred.
• the said ligand can be used individually by 1 type or in combination of 2 or more types.
• transition metal (salt) to which a ligand is coordinated for example, nickel chloride 2-triphenylphosphine, nickel bromide 2 _ triphenyl phosphine, nickel iodide 2 _ trif Enylphosphine, Nickel nitrate 2-Triphenyl phosphine, Chlorinated Nickenole 2, 2,-Biviridine, Nickel Bromide 2, 2,-Bipyridine, Yowiing Nickenole 2, 2-Bipyridine, Nickel Nitrate 2, 2,- The ability to name biviridine, bis (1,5-cyclocutadiene) nickel, tetrakis (triphenyl phosphine) nickel, tetrakis (trifenyl phosphite) nickel, tetrakis (triphenyl phosphine) palladium, etc.
• Nickel chloride 2 -Triphenyl phosphine, nichenole chloride 2, 2 '-biviridine are preferred.
• reducing agent for example, iron, zinc, manganese, anoleminium, magnesium, sodium, calcium and the like can be mentioned. Zinc and manganese are preferable.
• These reducing agents can be activated more by contacting with an acid or an organic acid.
• salts that can be used in such a catalyst system, sodium fluoride, sodium chloride, sodium bromide, sodium compounds such as sodium hydroxide, sodium hydroxide, sodium sulfate and the like, potassium fluoride, salts Potassium compounds such as potassium bromide, potassium bromide, potassium iodide, potassium sulfate, tetraethyl ammonium fluoride, tetraethyl ammonium chloride, tetraethyl ammonium bromide, tetraethyl ammonium iodide, tetraethyl ammonium sulfate
• suitable ammonium compounds include sodium ammonium bromide, sodium iodide, potassium bromide, tetraethyl ammonium bromide, and tetraethyl ammonium iodide.
• the ratio of each component used in such a catalyst system is such that the transition metal salt or the transition metal (salt) to which the ligand is coordinated is represented by the general formula (20), the general formula (27), and the general formula (27).
• the amount is usually 0.01 to 10 mol, preferably 0.0 to 0.5 mol, per 1 mol of the total amount of the compound represented by the above general formula (28). If the amount is less than 0. 0001, the polymerization reaction does not proceed sufficiently, while if it exceeds 10 mols, the molecular weight may decrease.
• the ratio of use of this ligand is usually 0.11 to 100 moles, preferably 1 to 1 mole of the transition metal salt.
• the ratio of the reducing agent used in the catalyst system is a compound represented by the general formula (20), a compound represented by the general formula (27), and a compound represented by the general formula (28).
• the amount is usually 0.1 to 100, preferably 110 to 110 mol, per 1 mol of the total. If the amount is less than 0.1 mol, polymerization does not proceed sufficiently, while if it exceeds 100 mol, purification of the resulting polymer may be difficult.
• the ratio of its use may be the compound represented by the above general formula (20), the compound represented by the above general formula (27), and the above general formula (28)
• the total amount of the compound represented by (1) is generally 0.010 100, preferably 0.10-1 mol, per 1 mol of the total amount of the compound. If the amount is less than 0.01, the effect of increasing the polymerization rate is insufficient, while 100 If the molar ratio is exceeded, purification of the resulting polymer may be difficult.
• the total concentration of the compound represented by the above general formula (20), the compound represented by the general formula (27) and the compound represented by the general formula (28) in the polymerization solvent is usually 1 to 100 weight %, Preferably 5 to 40% by weight.
• the polymerization temperature for polymerizing the above-mentioned polymer is usually 0 to 200 ° C., preferably 50 to 80 ° C.
• the polymerization time is usually 0.5 to 100 hours, preferably 1 to 40 hours.
• the polystyrene-equivalent weight average molecular weight of the compound 5 is usually 1,000, 000, 000.
• the polymer represented by the general formula (6) (hereinafter referred to as "the compound 6") is obtained, for example, by polymerizing a monomer containing a compound represented by the following general formula (29) and one (31) in the presence of a catalyst system It is possible to make S by manufacturing.
• R 10 and R 11 each independently represent a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 120 carbon atoms, a aryl group or a halogen atom
• X represents _C QQ ′ _
• Q and Q ′ may be the same or different and each represents a halogenated alkyl group, an alkyl group, a hydrogen atom, a halogen atom or an aryl group
• p is an integer of 0-4
• R 37 and R 38 each represents a hydroxyl group, a halogen atom or a ⁇ 'group ( ⁇ ' is an alkali metal)
• the compound (monomer) represented by the above general formula (29) include, for example, 2-bis (4-hydroxyphenylone) hexafluoropropane, bis (4-hydroxyphenylone) methane,
• the above-mentioned bisphenolic acid complex may be substituted with one OM ′ group ( ⁇ ′ is an alkali metal) by a basic compound containing sodium, potassium and the like.
• ⁇ ′ is an alkali metal
• two or more of the compounds represented by the general formula (29) can be copolymerized.
• R 1U and R 11 each independently represent a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 120 carbon atoms, a aryl group, or a halogen atom
• R 39 and R 4 ° each represent at least one member selected from the group consisting of a hydroxyl group, a halogen atom, and a ⁇ 'group ( ⁇ is an alkali metal), and ⁇ represents C NH NH-,-S-, -SO
• At least one member selected from the group of phenylene groups, e represents 0 or 1, and q and r each represent an integer of 0-4.
• Examples of the compound represented by the above general formula (30) include 4,4′-dichlorobiphenyl, 4,4′-dibromobiphenyl, 4,4′-diphorobiphenyl, 4,4′-jod Biphenyl, 4,4'-dihydroxybiphenyl, 4,4'-dihydroxy-3,3'-dipropenylbiphenyl, 4,4'-dihydroxy-3,3'-dimethylbiphenyl, 4,4'-dihydroxy-3 4,3'-Diethyl norebiphenyl, 4,4'-dimethylhydroxy 3,3 ', 5,5'-tetrafluorobiphenyl, 4,4'-dibromocopterophobiphenyl, 4,4 dihydroxy Oktafluorobiphenyl, 3, 3-Diaryl-4, 4-bis (4-hydroxy) biphenyl, 4, 4-Dichloro-2, 2, 2-Trifluoromethylbiphenyl 4, 4'-Zib mouth mode 2, 2'-Trifluor
• the hydroxyl group may be replaced with a 10'-group (wherein 'is an alkali metal) by a basic compound containing sodium, potassium and the like.
• the compounds represented by the above general formula (30) can be used alone or in combination of two or more.
• R 1 represents a hydrocarbon group having 120 carbon atoms, a cyano group, a nitro group, an alkoxyl group having 1 carbon atoms, an alinole group, or a halogen atom
• R 35 and R 36 each represent — S S Z Z (this
• Z represents an anolequinole group, a halogenated alkyl group, or an aryl group.
• chlorine atom, bromine atom or iodine atom, and s represents an integer of 0-4.
• Examples of the compound represented by the above general formula (31) include 1, 2-dihydroxybenzene, 1, 3-dihydroxybenzene, 1, 4-dihydroxybenzene, 2, 3-dihydroxytoluene, 2, 5 —Dihydroxytoluene, 2,6-dihydroxytoluene, 3,4-dihydroxytoluene, 3,5-dihydroxytoluene, o-dichlorobenzene, o-dibromobenzene, o-jodobenzene, o-dimethylsulfonyloxy Benzene, 2, 3-dichlorotoluene, 2, 3-dibromotoluene, 2, 3-Jodine toluene, 3, 4-dichlorotoluene, 3, 4_ dibromotoluene, 3, 4- Jodotoluene, 2, 3_ Dimethylsulfonyloxybenzene, 3, 4_ Dimethylsulfonyloxybenzene, m-
• the above bisphenol compound may be substituted with a basic compound containing sodium, potassium or the like to substitute a hydroxyl group with a monobasic group ( ⁇ ′ is an alkali metal).
• the compounds represented by the general formula (31) can be used singly or in combination of two or more.
• the compound 6 represented by the general formula (6) can be synthesized, for example, by heating a bisphenol compound and a dihalogenated compound in the presence of an alkali metal compound in a solvent.
• the proportion of the bisphenol compound and the dihalogenated compound, bis phenol compound is 45- 55 mol 0/0, preferably 48- 52 Monore 0/0, dihalogenated compound 55 45 Monore 0/0, preferably 52 it is 48 mol 0/0.
• the proportion of the bisphenol compound used is less than 45 mol% or more than 55 mol%, the coatability of the coating film may be inferior due to the increase in molecular weight of the polymer.
• alkali metal compound used at this time examples include sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium carbonate, potassium carbonate, lithium carbonate, sodium hydrogencarbonate, potassium hydrogencarbonate, lithium hydrogencarbonate and sodium hydride. And potassium hydride, lithium hydride, metallic sodium, metallic potassium, metallic lithium and the like. These are good if you use one or two or more simultaneously.
• Al The amount of the potassium metal compound to be used is generally 100 to 400 mol%, preferably 100 to 250 mol%, relative to the bisphenol compound.
• cuprous sulfate such as cupric sulfate, cuprous acetate, cupric acetate, cuprous formate and cupric formate
• the amount of the cocatalyst relative to bisphenol compound usually, 1 one 50 Monore 0/0, preferably 1 one 30 mole 0/0.
• Examples of the solvent used for the reaction include pyridine, quinoline, benzophenone, diphenyl ether, dialkoxybenzene (having 14 carbon atoms in alkoxyl group), and trialkoxybenzene (having 14 carbon atoms in alkoxyl group) , Diphenyl sulfone, dimethyl sulfoxide, dimethyl sulfone, jetyl sulfoxide, gethyl sulfone, diisopropyl sulfoneone, tetrahydrofuran, tetrahydrothiophene, sulfolane, N-methyl-2_pyrrolidone, N-acetyl-2_pyrrolidone, dimethylimidazo Lizinone, ⁇ _butyrorataton, dimethyl phonolemamide, dimethylacetoamide and the like can be used.
• the reaction concentration for synthesizing the compound 6 represented by the general formula (6) is 2 to 50% by weight based on the weight of the monomer, and the reaction temperature is 50 to 250 ° C.
• the reaction solution may be filtered or the reaction solution may be reprecipitated with a solvent which is a poor solvent for the polymer, or washed with an acid or alkaline aqueous solution. It is preferable to do.
• the weight average molecular weight of compound 6 thus obtained according to the GPC method is usually 500 to 500,000, preferably 800 to 100,000.
• the polymer represented by the general formula (7) (hereinafter referred to as “compound 7”) is selected, for example, from the group consisting of compounds represented by the following general formula (32) and the general formula (33) It can be obtained by polymerizing at least one compound and at least one compound selected from the group consisting of compounds represented by the following general formula (34) and general formula (35) in the presence of a catalyst Ru.
• compound 7 The polymer represented by the general formula (7)
• compound 7 is selected, for example, from the group consisting of compounds represented by the following general formula (32) and the general formula (33) It can be obtained by polymerizing at least one compound and at least one compound selected from the group consisting of compounds represented by the following general formula (34) and general formula (35) in the presence of a catalyst Ru.
• R M — R 19 and k, t, u, v, w are as defined for the general formula (8) and the general formula (9).
• R 19 — R 24 and 1, w, x, y, z are as defined for the general formula (9) and the general formula (10) above; Represents a halogen atom
• Examples of the compound represented by the above general formula (32) include 4, 4′-jeti ruby Nil, 3,3 '__ getynylbiphenyl, 3,4'_getynylbiphenyl, 4,4'_getynyl diphenyl ether, 3,3'-gethur diphenyl ether, 3,4'-getynoylene Diphenyl ether, 4, 4'-Jetulvenzophenone, 3,3'-Jetulbenzophenone, 3,4'-Jetulbenzopheenone, 4,4'-Jetuldiphenylmethane, 3,3'-Je 3,4 '-jeturdiphenyl methane, 4, 4'-jetulphenyl acid phenyl ester, 3, 3 '-jetulphenyl acid phenyl ester, 3, 4 '—Jetull Benzoyl Acidic Phenyl Ester, 4, 4' _ Jetini Nole Benzanilide, 3, 3 '_ Jetini Nole
• Examples of the compound represented by the above general formula (33) include: 1,2-jetchelbenzene, 1,3-butadinolenobenzene, 1,4-ditinodinobenzene, 2,5-getininoretono Ren, 3, 4-jetinyl toluene and the like can be mentioned. These compounds may be used alone or in combination of two or more.
• Examples of the compound represented by the above general formula (34) include 1,2-bis (2-bromophenoxy) benzene, 1,2-bis (2-fluorophenoxy) benzene, 1,2-bis (3) —Bromophenoxy) benzene, 1,2 bis (3'-phenphenoxy) benzene, 1,2_bis (4'bromophenoxy) benzene, 1,2 bis (4'phenphenoxy) benzene, 1,3 bis (2 —Bromophenoxy) benzene, 1,3-bis (2-oxophenoxy) benzene, 1,3-bis (3-bromophenoxy) benzene, 1,3-bis (3-odophenoxy) benzene, 1,3-bis (4 —Bromophenoxy) benzene, 1,3-bis (4-hydroxyphenyl) benzene, 1,4-bis (3-bromophenoxy) benzene, 1,4-bis (3-phosphophenoxy) benzene, 1,4-bis (2-) Bromo Enoxy
• Examples of the compound represented by the above general formula (35) include: 1,2-dichlorobenzene, 1,3-dichlorobenzene, 1,4-dichlorobenzene, 1,2-dithiod benzene, 1,3 —Jode benzene, 1, 4- Jode benzene, 1, 2 _ dibromo benzene, 1, 3 _ dibromo benzene, 1, 4 _ dibromo benzene, 2, 3 dichloro toluene, 2, 4 dichloro toluene, 2, 5-Dichlorotoluene, 2, 6-Dichlorotoluene, 3,4- Dichlorotoluene, 2, 3-Jordot Noren, 2, 4- Jordotoluene, 2, 5-Jordotoluene, 2, 6-Jordo Tonorje And 3, 4-Joodotoluene, 2, 3_ Dibromotoluene, 2, 4_ Dibromotoluene
• compound 7 is a compound represented by the above general formula (32) and / or a compound represented by the general formula (33), a compound represented by the above general formula (34), and Z Also, they are produced by polymerizing a compound represented by the general formula (35) in the presence of a catalyst, and in this case, a compound represented by the above general formula (32) and / or a table represented by the general formula (33)
• the ratio of the compound used and the compound represented by the above general formula (34) and / or the compound represented by the general formula (35) is the latter compound relative to 1 mol of the total of the former compounds.
• compound 7 it is preferable to polymerize the compounds represented by the above general formulas (32) to (35) in the presence of a catalyst containing a transition metal compound.
• a catalyst comprising a transition metal compound and a basic compound is more preferred.
• the following components (a), (b) and (c) are particularly preferred: .
• a palladium salt for example, palladium chloride, palladium bromide, palladium oxide and the like can be mentioned. These compounds may be used alone or in combination of two or more.
• the proportion of the palladium salt used is preferably 0. 0001-10 mono, more preferably 0. 001 per 1 mol of the total amount of the compounds represented by the above general formula (32) (35). It is 1 monoret. If the amount is less than 0.001 mole, polymerization may not proceed sufficiently, while if it is more than 10 moles, purification may be difficult.
• examples of the ligand-forming substance include triphenyl phosphine, tri-o-trinole phosphine, tricyanophenyl phosphine, tricyanomethyl phosphine and the like. Among them, trifluorophenyl phosphine is preferred. These compounds may be used alone or in combination of two or more.
• the ratio of use of the ligand-forming substance is preferably 0.004 to 50 moles, more preferably 0.004 to a total of 1 mol of the compounds represented by the above general formulas (32) to (35). It is 5 monorets. If it is less than 0. 0004, polymerization power S may not progress sufficiently, while if it exceeds 50 mol, purification may become difficult.
• the palladium complex for example, dichlorobis (triphenylphosphine) palladium, dibromobis (triphenylphosphine) palladium, joadobis (triphenylenonorephosphine) palladium, dichlorobis (tri-1-o-tolylphosphine) Palladium, dichlorobis (tricyanophenylphosphine) palladium, dichlorobis (tricyanomethylphosphine) palladium, dibromobis (tri-o-tolylphosphine) palladium, dibromobis (trisocyanophenyl phosphine) palladium, dibromobis (tricyanomethylphosphine) palladium, Joadobis (tri_o_tolylphosphine) palladium, joadobis (tricyanophenylphosphine) palladium, joadobis (triphenylphosphine)
• dichloro bis (triphenyl phosphine) palladium and tetrakis (triphenyl phosphine) palladium are preferable. These compounds may be used alone or in combination of two or more.
• the ratio of use of the sodium complex is preferably 1 mol of the total of the compounds represented by the general formulas (32) and (35). Is 0. 0001-10 monore, more preferably 0. 001-1 monore. If the amount is less than 0.0001, polymerization may not proceed sufficiently, while if it exceeds 10 moles, purification may be difficult.
• Examples of monovalent copper compounds include copper (I) chloride, copper (I) bromide, copper (I) iodide and the like. These compounds may be used alone or in combination of two or more.
• the ratio of the (b) 1-valent copper compound to be used is preferably 0. 0001-10 mono- or more preferably 1 mol of the total of the compounds represented by the above general formulas (32) to (35). Is 0. 0 01-1 mole. If the amount is less than 0.1 mol, polymerization may not proceed sufficiently, whereas if it exceeds 10 mol, purification may be difficult.
• Examples of the basic compound include pyridine, pyrrole, piperazine, pyrrolidine, piperidine, picoline, trimethinoleamine, triethinoleamine, monoethanolamine, jetanolamine, and dimethyl monoethanol.
• Hamamine, monomethyl jetanolamine, triethanol noleamine, diazabicyclooctane, diazabicyclononane, diazabicycloundecene, tetramethyl ammonium hydroxide, getilamine, ammonia, n-butylamine, imidazole Etc. can be mentioned. Among them, preferred is getilamine, piperidine and n-butylamine. These compounds may be used alone or in combination of two or more.
• the proportion of the basic compound (c) used is preferably 1 to 1000 mol, more preferably 1 to 100 mol, per 1 mol of the total amount of the compounds represented by the general formulas (32) to (35). It is a mole. When it is less than 1 mole, polymerization may not proceed sufficiently, while when it is more than 100 moles, it is not economical.
• the polymer represented by the general formula (11) (hereinafter referred to as “compound 8”) is, for example, a compound represented by the following general formula (36) and the following general formulas (37) and (38) It can be manufactured S by force. [Formula 34]
• R ld and R ′ ′ each represents a hydrogen atom or at least one group selected from the group of aromatic groups represented by the above general formulas (12) and (13), W 1 and W 2 each represent at least one group selected from the group consisting of divalent aromatic groups represented by the general formulas (14) and (15).
• Compound 8 represented by General Formula (11) is obtained by Diels-Alder reaction of a cyclopentagenone group of General Formula (36) and an acetylene group of General Formulas (37) and (38). That ability S can.
• the number average molecular weight (Mn) of compound 8 is more than 3,500, preferably more than 4,000, preferably less than 6,400, and more preferably less than 6,000.
• the weight average molecular weight (Mw) of the compound 8 is more than 500, preferably more than 8,000, preferably less than 15, 000, and more preferably less than 12,000.
• compound 8 preferably has a polydispersity (Mw / Mn) of less than about 2.5, more preferably less than about 2.3. [0145] 3. 2. 5.
• the polymer represented by the general formula (16) (hereinafter referred to as "bonded compound 9") can be obtained by reacting a compound of the following general formula (39) and one (41).
• X represents a structure which is one selected from the above-mentioned formula (17).
• Y represents a structure which is one selected from the above-mentioned formulas (18) or (19).
• Examples of the compound represented by the general formula (39) include 2,4-diaminoresorcinol, 4,6-diaminoresorcinol, 2,2-bis (3-amino-4-hydroxyphenyl) propane, 2,2 —Bis (4-amino-1-hydroxyphenyl) propane, 3-, 3-amino-4-, 4-dihydroxy-biphenylsulfone, 4-dimethylamino-3, 3-dihydroxybiphenylsulfonate, 3.
• 3-diamino _ 4 4-dihydroxybiphenyl, 4, 4-diamino-3, 3-3 dihydroxyphenyl, 9, 9-bis-1 ⁇ 4-(4-amino-1-3-hydroxy) phenoxy) phenylene 2 ⁇ Fluorene, 9,9-bis-one ⁇ 4- ((3-amino-1 4-hydroxy) phenoxy) phenyl ⁇ fluorene, 9,9-bis-mono ⁇ 4- ((4-amino 3-hydroxy) phenoxy 3-phenyl) phenyl ⁇ fluorene, 9, 9 —Bis-one ⁇ 4-— ((3-amino-1—hydroxy) phenoxy 3-pheniole) phenole ⁇ phenoleene, 3,3 diamino-4,4 didihydroxy diphenyl ether, 4,4 diamino _3 , And the ability to include, for example, 3'-dihydroxydiphenyl ether. These are not necessarily limited to these. Moreover, it is
• Examples of the compound represented by the general formula (40) include 4-methylisophthalic acid, 4-phenylisophthalic acid, 4_t-butylisophthalic acid, 4-trimethylsilylisophthalic acid, 4-adamantylisophthalic acid 5-methylisophthalic acid, 5-phenylisophthalic acid, 5-butylisophthalic acid, 5-trimethylsilylisophthalic acid, 5-adamantylisophthalic acid, 2-methylterephthalic acid, 2-phenylterephthalic acid, 2-t-butylterephthalic acid, 2-trimethylsilylterephthalic acid, 2-adamantylterephthalic acid, 4-bisbis (2-methyl) phenyldicarboxylic acid, 4-bisbis (3-methyl) phenyldicarboxylic acid Acid, 4,4 bis (2_t_butyl) phenyldicarboxylic acid, 4,4 bis (3_t-butyl) phenyldicarboxylic acid,
• Examples of the dicarboxylic acid containing the structure represented by the general formula (41) used in the present invention include, for example, 1,3-adamantanedicarboxylic acid, 2,5-dimethyladamantane 1, 1,3-dicarboxylic acid Acid, 2,5-Diphenyladamantaneone 1, 3-dicarboxylic acid, 2,5-bis (t-butyl) adamantane 1, 1, 3-dicarboxylic acid, etc. but not necessarily limited to these. Les. It is also possible to use two or more of these compounds in combination.
• Compound 9 can be prepared by a known method such as an acid chloride method, an active ester method, or a synthesis method based on a condensation reaction in the presence of a dehydrating condensing agent such as polyphosphoric acid dicyclohexylidene imide. That ability S can.
• the molar ratio (M mole) of the diaminophenol compound (M mole) represented by the general formula (39) to the dicarboxylic acid (N mole) represented by the general formula (40) It is preferable that N / M) be reacted in the range of 0.5 to 0.9, 9 to obtain a polymer having a branched structure.
• the molar ratio (N / M) is larger than 0.9 or 9
• the effect of lowering the dielectric constant due to the bulky substituent of the dicarboxylic acid may be lowered, and the molar ratio (N / M) is smaller than 0.5
• the molecular weight of the resulting polymer does not increase, and unreacted diaminophenol compound remains, causing problems in the formation of the organic insulating film, or becoming a brittle, organic insulating film.
• the case of producing a polymer by an acid chloride method will be described.
• the dicarboxylic acid represented by the general formula (40) for example, 5_t-butylisophthalic acid and an excess amount of thionyl chloride can be used at room temperature or 75 °.
• the reaction is carried out at C and excess thionyl chloride is distilled off by heating and depressurizing, and then the residue is recrystallized with a solvent such as hexane to obtain 5_t_butyl isophthalic acid chloride.
• a diaminophenol compound represented by the general formula (39) for example, 2-bis (3-amino-4-hydroxyphenyl) propane, is usually N-methyl-2-pyrrolidone, Dissolving in a polar solvent such as N, N-dimethyl acetoamide, and reacting the previously prepared chloride compound of dicarboxylic acid in the presence of an acid acceptor such as triethylamine, at room temperature to 130 ° C.
• a compound 9 consisting of a polymer having a main structure of a polybenzoxazole precursor represented by the general formula (16) can be obtained.
• an active ester compound of a dicarboxylic acid compound represented by the general formula (40) may be reacted with a diamine compound of a cyanophenol compound.
• Compound 9 can be obtained.
• a solvent can be used, if necessary.
• the polymerization solvent is not particularly limited.
• halogen solvents such as chlorophonolem, dichloromethane, 1,2-dichloroethane, benzene, dichlorobenzene and the like; benzene, toluene, xylene, mesitylene, jetyl benzene and the like Hydrocarbon solvents; ether solvents such as jetyl ether, tetrahydrofuran, dioxan, diglyme, anisoone, diethylene glycolone methylethione tenole, diethyleneglycolone regetinolee, diethylene glycol methylethyl ether; Ketone solvents such as methyl ethyl ketone, 2_heptanone, cyclohexanone, and cycle pentanone; methyl acetate, ethy
• the ester solvents such as N, ⁇ ⁇ ⁇ ⁇ -dimethylformamide, ⁇ ⁇ ⁇ ⁇ , ⁇ -dimethylacetoamide, ⁇ ⁇ ⁇ -methyl _ _ pyrrolidone, etc. can be used to raise the amide solvent S. It is preferable to use these solvents after sufficient drying and deoxygenation. These solvents may be used alone or in combination of two or more.
• the concentration of the monomer (polymerization component) in the polymerization solvent is preferably 1 to 80% by weight, more preferably 5 to 60% by weight.
• the polymerization temperature is preferably 0 to 150 ° C, more preferably 510 ° C.
• the polymerization time is preferably 0.5 to 100 hours, more preferably 114 hours.
• a composition 3 is obtained by dissolving at least one polymer selected from the group of the above compound 59 in an organic solvent, and this composition 3 is used as a substrate.
• the coating is applied to form a coating, and the coating is heated. An organic insulating film is thus obtained.
• an organic solvent which can be used for the composition for example, n-pentane, i-pentane, n-hexane, i-xane, n-heptane, i-heptane, 2, 2, 4-trimethylpentane, n Aliphatic hydrocarbon solvents such as octane, tooctane, cyclohexane and methylcyclohexane; benzene, toluene, xylene, ethylbenzene, trimethylbenzene, methylethylbenzene, n-propylbenzene, i-propylbenzene, getilbenzene
• Aromatic hydrocarbon solvents such as 1-butylbenzene, tolytylbenzene, di-propylbenzene, n-amylnaphthalene, and trimethylbenzene; methanol, ethanol, n-propanol, i-propano
• Ester solvents N-methyl formamide, N, N- dimethyl phonolemamide, N, N- jetyl formamide, acetoamide, N- methyl acetoamide, N, N- dimethyl acetoamide, N- methyl propionamide, N Nitrogen-containing solvents such as methyl pyrrolidone; It is possible to use sulfur, sulfur-containing solvents such as methyl, jetyl sulfide, thiophen, tetrahydrothiophen, dimethylenosulfoxide, sulfolane, 1,3-propane sultone and the like. These excited IJs can be used singly or in combination of two or more.
• composition for film formation of the present invention may further comprise colloidal silica, an organic polymer other than compound 59 used to form an organic insulating film, a surfactant, a silane coupling agent, and a radical generator.
• colloidal silica an organic polymer other than compound 59 used to form an organic insulating film
• a surfactant a silane coupling agent
• a radical generator a radical generator.
• a compound containing a polymerizable double bond, or a component such as a polymerizable triple bond may be added.
• the composition 3 can be applied to a substrate, the solvent is removed, and then the coating can be cured by heating.
• spin coating, dicing, roller blade, spray method, etc. may be mentioned as a method of applying Composition 1 to a substrate.
• a film thickness of about 1 to 1 nm thick can be formed by one-time coating as a dry film thickness, and a film thickness of about 2-2000 nm can be formed by two-time coating.
• the coating can be dried by heating generally at a temperature of about 60 to 600 ° C. for about 1 to 240 minutes.
• a hot plate, an oven, a furnace or the like can be used as a heating method, and the heating atmosphere may be atmosphere, nitrogen atmosphere, argon atmosphere, vacuum, reduced pressure with controlled oxygen concentration, or the like. It can be done.
• the coating film can also be formed by irradiation with an electron beam or ultraviolet light, which is preferable in that the drying time can be shortened.
• the process time is shortened by simultaneously curing the three layers. It can also be done.
• the insulating film of the present invention is an insulating film obtained by the above-described method of forming an insulating film. That is, it is a multilayer insulating film in which at least a polycarbosilane insulating film, a polycarbosilane insulating film, and an organic insulating film are stacked.
• a polycarbosilane insulating film exists between a polysiloxane insulating film which is a so-called low-k film and an organic insulating film.
• Polycarbosilane insulating films are less susceptible to etching damage even when exposed to an etching process atmosphere such as RIE.
• the etching damage is not given to the polysiloxane insulating film in the lower layer of the organic insulating film. Therefore, the insulating film of the present invention is excellent in resistance to processes such as etching, ashing or wet cleaning while maintaining the low dielectric constant of the polysiloxane insulating film.
• the insulating film of the present invention is a semiconductor device having a wiring layer having a dual damascene structure, and a layer of a polysiloxane insulating film is used as a layer forming a via portion, and a trench portion is formed.
• the use of an organic insulating film in the layer is particularly advantageous.
• the force by which the organic insulating film is etched to form the trench portion In this etching, etching damage may occur in the underlying polysiloxane insulating film.
• the polycarbosilane insulating film is By being interposed between the insulating film and the polysiloxane insulating film, the polysiloxane insulating film can be protected. Therefore, according to the insulating film of the present invention, a semiconductor device having a more reliable wiring layer can be provided.
• the insulating film of the present invention is an interlayer insulating film for semiconductor elements such as LSI, system LSI, DRAM, SDRAM, RDRAM, D-RDR AM, etc., a protective film such as a surface coat film of semiconductor elements, multilayer wiring board It is useful for applications such as interlayer insulating films, protective films for liquid crystal display elements, and insulating preventing films.
• a polysiloxane compound was obtained by the following method. In a quartz separable flask, 570 g of distilled ethanol, 160 g of ion-exchanged water, and 30 g of a 10% aqueous solution of tetramethyl ammonium hydroxide were uniformly stirred. Next, a mixture of 136 g of methyltrimethoxysilane and 209 g of tetraethoxysilane was added to this solution. The reaction was carried out for 2 hours while keeping the solution at 55 ° C.
• This composition for film formation (C) is applied by spin coating on a silicon wafer of 8 inches, baked at 400 ° C., and a polysiloxane insulating film (film thickness 400 nm, low-k film, The dielectric constant was 2.3).
• composition for film formation (A) is applied on the polysiloxane insulating film by spin coating, and the resultant is dried at 80 ° C. for 1 minute and further at 200 ° C. for 1 minute to form a protective layer.
• a polycarbosilane insulating film (film thickness 10 nm) was formed.
• an organic insulating film was formed on the polycarbosilane insulating film.
• a composition (D) for film formation for an organic insulating film was prepared by the following method.
• the reaction solution was repeatedly reprecipitated with 5 liters of acetic acid twice, dissolved in cyclohexanone and washed twice with ultrapure water. Then, it was reprecipitated with 5 liters of methanol, and the obtained precipitate was filtered and dried to obtain a polymer having a weight average molecular weight of 35,000. 20 g of this polymer was dissolved in 180 g of cyclohexanone to obtain a film-forming composition (D).
• the weight average molecular weight (Mw) of the polymer is determined by gel permeation under the following conditions. It measured by the yon chromatography (GPC) method.
• Tetrahydrofuran was used as a solvent, and the polymer lg was prepared by dissolving it in 100 cc of tetrahydrofuran.
• Standard polystyrene Standard polystyrene manufactured by US Pressure Chemical Company was used.
• Equipment High-temperature high-speed gel permeation chromatogram (Model 150-CAL C / GPC) manufactured by Waters, USA
• composition for film formation (D) was applied on a polycarbosilane insulating film by spin coating. Thereafter, baking was performed at 400 ° C. for one hour, to form an organic insulating film.
• Example 1 consisting of a laminate of three insulating films was obtained.
• the film forming composition (C) similar to that obtained in Example 1 is applied by spin coating on an 8 inch silicon wafer, dried at 80 ° C. for 1 minute, then dried at 200 ° C. for 1 minute. An uncured polysiloxane insulating film (film thickness 400 nm) was obtained.
• composition for film formation (A) is applied on the uncured polysiloxane insulating film by spin coating, dried at 80 ° C. for 1 minute, and further at 200 ° C. for 1 minute, and then protected.
• a polycarbosilane insulating film (film thickness 10 nm), which is a layer, was formed.
• the film-forming composition (D) was applied onto the polycarbosilane insulating film by spin coating. Thereafter, baking was performed at 400 ° C. for one hour to form an organic insulating film.
• Example 2 formed of a laminate of three insulating films was obtained.
• a composition for film formation (C) was prepared using the same composition for film formation (C) as obtained in Example 1.
• composition for film formation (B) is applied on the uncured polysiloxane insulating film by spin coating, dried at 80 ° C. for 1 minute, and further at 200 ° C. for 1 minute to protect it.
• a polycarbosilane insulating film (film thickness 10 nm) was formed as a layer.
• the film-forming composition (D) was applied onto the polycarbosilane insulating film by spin coating. Thereafter, baking was performed at 400 ° C. for one hour to form an organic insulating film.
• Example 3 consisting of a laminate of three insulating films was obtained.
• composition for film formation (C) obtained in Example 1 is applied by spin coating on a silicon wafer of 8 inches, baked at 400 ° C., and a polysiloxane insulating film (film thickness 400 nm, dielectric constant 2) I got 3).
• the film-forming composition (D) was applied onto the polysiloxane insulating film by spin coating. Thereafter, baking was performed at 400 ° C. for one hour, to form an organic insulating film.
• an insulating film consisting of two insulating layers was obtained without forming a polycarbosilane insulating film to be a protective layer.
• An aluminum electrode pattern was formed on the obtained insulating film by vapor deposition to prepare a sample for measuring the relative dielectric constant.
• the relative dielectric constant was measured at a frequency of 100 kHz by a CV method using an HP16451B electrode manufactured by Yokogawa's Hewlett Packard Co., Ltd. and an HP4284A pressure LCR meter. The measurement results are shown in Table 1.
• the film thickness of each layer of the insulating film as a laminated body was calculated using the multi-layered analysis mode of n & k analyzer 1500 manufactured by N & K Technologies. The film thickness of each layer calculated in this manner was used to obtain the relative dielectric constant of 5. 2. 3.
• the relative permittivity of the organic insulating film formed on the silicon wafer was measured, and the organic insulating film had this relative permittivity even after lamination.
• the relative dielectric constant of the polysiloxane insulating film is calculated using the serial capacitor model from the measurement results of the film thickness of each layer obtained by multilayer analysis and the relative dielectric constant of the laminate. Calculated. The measurement results are shown in Table 1.
• Example 13 and Comparative Example 1 Each insulating film obtained in each of Example 13 and Comparative Example 1 was baked in a nitrogen atmosphere at 400 ° C. for one hour, and then each laminated film was subjected to a plasma etching apparatus manufactured by Tokyo Electron Ltd.
• the RIE resistance was evaluated from the dielectric constant change of the siloxane Low_k film before and after the exposure to organic Low_k film etching conditions using ammonia or oxygen.
• the relative dielectric constants of the polysiloxane insulating film before and after exposure are shown in Table 1.
• Comparative example 1 4.8
• the polycarbosilane insulating film is formed on the polysiloxane insulating film, and the polycarbosilane insulating film is used as a protective layer of the polysiloxane insulating film. Function. Therefore, as shown in Table 1, in the case of the insulating film of Example 13, when the polycarbosilane insulating film is formed on the polysiloxane insulating film, the increase of the dielectric constant and the hydrofluoric acid are caused. No etching was observed.
• Example 13-13 the damage (damage caused by the plasma used in the etching) generated when the organic insulating film formed above the polysiloxane insulating film is etched is eliminated. It has been confirmed that it can be suppressed.
• the insulating film of Example 13 has better fracture toughness and improved adhesion strength as compared with the insulating film of Comparative Example 1. confirmed.

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