JP4734369B2 - キャパシタ及びその製造方法 - Google Patents
キャパシタ及びその製造方法 Download PDFInfo
- Publication number
- JP4734369B2 JP4734369B2 JP2008106013A JP2008106013A JP4734369B2 JP 4734369 B2 JP4734369 B2 JP 4734369B2 JP 2008106013 A JP2008106013 A JP 2008106013A JP 2008106013 A JP2008106013 A JP 2008106013A JP 4734369 B2 JP4734369 B2 JP 4734369B2
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- Expired - Fee Related
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- 239000003990 capacitor Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000010410 layer Substances 0.000 claims description 145
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 88
- 229920000642 polymer Polymers 0.000 claims description 52
- 239000002135 nanosheet Substances 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 27
- 238000010030 laminating Methods 0.000 claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 230000018109 developmental process Effects 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Description
2:基板
3:銅張層
5:接着剤層
7:高分子層
9:シード層
11:メッキ層
12:回路パターン
13:第1メッキレジスト
15:第2メッキレジスト
17:Ti層
19:チタニアナノシート
Claims (7)
- 基板に高分子層を形成するステップと、
前記高分子層にメッキ層を形成するステップと、
前記メッキ層に第1メッキレジストを積層し、選択的に除去するステップと、
露出された前記メッキ層をエッチングして回路パターンを形成するステップと、
除去後に残っている前記第1メッキレジストを剥離するステップと、
前記回路パターン以外の部分に第2メッキレジストを積層するステップと、
前記回路パターンと前記第2メッキレジスト上にTi層を塗布するステップと、
前記第2メッキレジストを剥離して、前記Ti層が前記回路パターン上に残るようにするステップと、
前記Ti層上にチタニアナノシートを接着させるステップと、
を含むキャパシタの製造方法。 - 前記基板は、銅張積層板であることを特徴とする請求項1に記載のキャパシタの製造方法。
- 前記高分子層を形成するステップは、接着剤層を用いて、前記高分子層を前記基板に接着させるステップを含むことを特徴とする請求項1または2に記載のキャパシタの製造方法。
- 前記高分子層を形成するステップ以降に、プラズマ処理ステップをさらに含むことを特徴とする請求項1から3のいずれか1項に記載のキャパシタの製造方法。
- 前記プラズマ処理ステップ以降に、前記高分子層にシード層を積層するステップをさらに含むことを特徴とする請求項4に記載のキャパシタの製造方法。
- 前記シード層の積層ステップは、スパッタリング方法で行われることを特徴とする請求項5に記載のキャパシタの製造方法。
- 前記Ti層の塗布ステップは、スパッタリング方法で行われることを特徴とする請求項1から6のいずれか1項に記載のキャパシタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0037740 | 2007-04-18 | ||
KR1020070037740A KR100851067B1 (ko) | 2007-04-18 | 2007-04-18 | 캐패시터 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008270804A JP2008270804A (ja) | 2008-11-06 |
JP4734369B2 true JP4734369B2 (ja) | 2011-07-27 |
Family
ID=39653828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008106013A Expired - Fee Related JP4734369B2 (ja) | 2007-04-18 | 2008-04-15 | キャパシタ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8199456B2 (ja) |
EP (1) | EP1983532B1 (ja) |
JP (1) | JP4734369B2 (ja) |
KR (1) | KR100851067B1 (ja) |
CN (1) | CN101291562B (ja) |
DE (1) | DE602008004004D1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10043707B2 (en) * | 2012-10-16 | 2018-08-07 | Qorvo Us, Inc. | Additive conductor redistribution layer (ACRL) |
US9490323B2 (en) | 2014-06-13 | 2016-11-08 | Samsung Electronics Co., Ltd. | Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width |
US9685564B2 (en) | 2015-10-16 | 2017-06-20 | Samsung Electronics Co., Ltd. | Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures |
KR101901697B1 (ko) | 2016-03-21 | 2018-11-07 | 삼성전기 주식회사 | 코일 장치의 제작 방법 및 코일 장치 |
US10032856B1 (en) | 2017-01-24 | 2018-07-24 | International Business Machines Corporation | Nanosheet capacitor |
KR102290337B1 (ko) * | 2018-06-29 | 2021-08-17 | 한국세라믹기술원 | 가스센서용 전극 제조방법 및 가스센서 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60170229A (ja) * | 1984-02-14 | 1985-09-03 | 松下電器産業株式会社 | 金属化フイルムコンデンサ |
JPH01108161A (ja) * | 1987-10-19 | 1989-04-25 | Toray Ind Inc | チタニア薄膜の形成方法 |
JPH02279520A (ja) * | 1989-04-20 | 1990-11-15 | Noboru Yoshimura | TiO2薄膜形成方法 |
JP2003158378A (ja) * | 2001-11-26 | 2003-05-30 | Hitachi Ltd | 多層回路基板を有する電子回路装置の製造方法 |
JP2005093736A (ja) * | 2003-09-17 | 2005-04-07 | Ngk Spark Plug Co Ltd | 薄膜キャパシタ用セラミック基板及びその製造方法並びにこれを用いた薄膜キャパシタ |
Family Cites Families (17)
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FR1463989A (fr) * | 1965-11-15 | 1966-07-22 | Electronique & Automatisme Sa | Procédé de préparation d'oxyde de titane diélectrique et produits industriels nouveaux en résultant |
JPH02203511A (ja) * | 1989-02-02 | 1990-08-13 | Matsushita Electric Ind Co Ltd | 薄膜コンデンサの形成方法 |
US5219611A (en) * | 1991-09-30 | 1993-06-15 | Cornell Research Foundation, Inc. | Preparing densified low porosity titania sol gel forms |
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US5736448A (en) * | 1995-12-04 | 1998-04-07 | General Electric Company | Fabrication method for thin film capacitors |
US5920454A (en) * | 1997-02-11 | 1999-07-06 | Hokuriko Electric Industry Co., Ltd. | Capacitor-mounted circuit board |
JP2000031387A (ja) * | 1998-07-14 | 2000-01-28 | Fuji Electric Co Ltd | 誘電体薄膜コンデンサの製造方法 |
KR100376482B1 (ko) * | 1999-12-17 | 2003-03-17 | 삼성전기주식회사 | 캐패시터 내장형 인쇄회로기판 제조방법 |
JP3513589B2 (ja) * | 2000-03-24 | 2004-03-31 | 独立行政法人物質・材料研究機構 | チタニア超薄膜およびその製造方法 |
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US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
US7186919B2 (en) * | 2004-08-16 | 2007-03-06 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board including embedded capacitors and method of manufacturing the same |
JP2006072352A (ja) * | 2004-08-19 | 2006-03-16 | Rohm & Haas Electronic Materials Llc | プリント回路板を形成する方法 |
JP2006147607A (ja) | 2004-11-16 | 2006-06-08 | Nec Toppan Circuit Solutions Inc | 印刷配線板及びその製造方法並びに半導体装置 |
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-
2007
- 2007-04-18 KR KR1020070037740A patent/KR100851067B1/ko not_active IP Right Cessation
-
2008
- 2008-03-31 EP EP08251275A patent/EP1983532B1/en not_active Ceased
- 2008-03-31 DE DE602008004004T patent/DE602008004004D1/de active Active
- 2008-04-02 US US12/078,648 patent/US8199456B2/en not_active Expired - Fee Related
- 2008-04-15 JP JP2008106013A patent/JP4734369B2/ja not_active Expired - Fee Related
- 2008-04-16 CN CN2008100904693A patent/CN101291562B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60170229A (ja) * | 1984-02-14 | 1985-09-03 | 松下電器産業株式会社 | 金属化フイルムコンデンサ |
JPH01108161A (ja) * | 1987-10-19 | 1989-04-25 | Toray Ind Inc | チタニア薄膜の形成方法 |
JPH02279520A (ja) * | 1989-04-20 | 1990-11-15 | Noboru Yoshimura | TiO2薄膜形成方法 |
JP2003158378A (ja) * | 2001-11-26 | 2003-05-30 | Hitachi Ltd | 多層回路基板を有する電子回路装置の製造方法 |
JP2005093736A (ja) * | 2003-09-17 | 2005-04-07 | Ngk Spark Plug Co Ltd | 薄膜キャパシタ用セラミック基板及びその製造方法並びにこれを用いた薄膜キャパシタ |
Also Published As
Publication number | Publication date |
---|---|
DE602008004004D1 (de) | 2011-02-03 |
CN101291562A (zh) | 2008-10-22 |
US20080259523A1 (en) | 2008-10-23 |
CN101291562B (zh) | 2010-08-04 |
US8199456B2 (en) | 2012-06-12 |
EP1983532B1 (en) | 2010-12-22 |
EP1983532A1 (en) | 2008-10-22 |
JP2008270804A (ja) | 2008-11-06 |
KR100851067B1 (ko) | 2008-08-12 |
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