JP2006173544A - 配線基板の製造方法 - Google Patents
配線基板の製造方法 Download PDFInfo
- Publication number
- JP2006173544A JP2006173544A JP2004367945A JP2004367945A JP2006173544A JP 2006173544 A JP2006173544 A JP 2006173544A JP 2004367945 A JP2004367945 A JP 2004367945A JP 2004367945 A JP2004367945 A JP 2004367945A JP 2006173544 A JP2006173544 A JP 2006173544A
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- Prior art keywords
- forming
- layer
- capacitor
- electrode layer
- wiring
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000003990 capacitor Substances 0.000 claims abstract description 90
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 174
- 238000007747 plating Methods 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000797947 Paria Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H05K2203/061—Lamination of previously made multilayered subassemblies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
- H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
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Abstract
【解決手段】 半導体チップに接続されるキャパシタを形成する工程と、前記キャパシタと前記半導体チップを接続する配線部を形成する工程と、を有する半導体チップが接続される配線基板の製造方法であって、前記キャパシタを形成する工程は、当該キャパシタを支持する支持体上に、当該キャパシタを構成する複数の層を形成する工程と、前記支持体を前記複数の層から剥離する工程と、を有し、前記支持体と前記複数の層との間に、当該支持体を当該複数の層から剥離するための支持体剥離層を形成する工程をさらに有することを特徴とする配線基板の製造方法により、解決する。
【選択図】 図2F
Description
前記キャパシタと前記半導体チップを接続する配線部を形成する工程と、を有する半導体チップが接続される配線基板の製造方法であって、前記キャパシタを形成する工程は、当該キャパシタを支持する支持体上に、当該キャパシタを構成する複数の層を形成する工程と、前記支持体を前記複数の層から剥離する工程と、を有し、前記支持体と前記複数の層との間に、当該支持体を当該複数の層から剥離するための支持体剥離層を形成する工程をさらに有することを特徴とする配線基板の製造方法により、解決する。
200 配線基板
101 支持体
102 支持体剥離層
103 第1の電極層
104,106 バリア層
104A,104B,106A,106B 金属層
105 誘電体層
107 第2の電極層
108,109,110,201,205,206,211 絶縁層
111,202,207,209,212 ビア配線
112,203,204,208,210,213 パターン配線
113,214 ソルダーレジスト層
114,215 メッキ層
115 ソルダーバンプ
400 半導体チップ
Claims (8)
- 半導体チップに接続されるキャパシタを形成する工程と、
前記キャパシタと前記半導体チップを接続する配線部を形成する工程と、を有する半導体チップが接続される配線基板の製造方法であって、
前記キャパシタを形成する工程は、
当該キャパシタを支持する支持体上に、当該キャパシタを構成する複数の層を形成する工程と、
前記支持体を前記複数の層から剥離する工程と、を有し、
前記支持体と前記複数の層との間に、当該支持体を当該複数の層から剥離するための支持体剥離層を形成する工程をさらに有することを特徴とする配線基板の製造方法。 - 前記複数の層を形成する工程は、
前記支持体剥離層上に第1の電極層を形成する工程と、
当該第1の電極層上に誘電体層を形成する工程と、
当該誘電体層上に第2の電極層を形成する工程と、を含むことを特徴とする請求項1記載の配線基板の製造方法。 - 前記第1の電極層、および第2の電極層は、Cuよりなることを特徴とする請求項2記載の配線基板の製造方法。
- 前記支持体剥離層は、Mo,Ta,またはPtよりなることを特徴とする請求項3記載の配線基板の製造方法。
- 前記配線部は、前記第1の電極層および前記第2の電極層を貫通するビア配線を含み、前記第1の電極層および前記第2の電極層に、前記配ビア配線が貫通する穴部を形成する穴部形成工程を有することを特徴とする請求項2乃至4のうち、いずれか1項記載の配線基板の製造方法。
- 前記穴部形成工程は、
前記第2の電極層に第1の穴部を形成する工程と、
当該第1の穴部を形成した後、当該第2の電極層上に絶縁層を形成する工程と、
当該絶縁層を形成した後、前記支持体を前記第1の電極層より剥離し、前記第1の電極層に、前記第1の穴部に対応する第2の穴部を形成する工程と、を有することを特徴とする請求項5記載の配線基板の製造方法。 - 前記穴部形成工程の後、
前記穴部を貫通するビア配線を形成する工程と、
前記ビア配線に接続され、前記半導体チップが接続される第1の側と、当該第1の側の反対側の第2の側を電気的に接続する多層配線を形成する工程をさらに有することを特徴とする請求項6記載の配線基板の製造方法。 - 前記誘電体層は、Ta2O5,STO,BST,PZT,または、BTOよりなることを特徴とする請求項2乃至7のうち、いずれか1項記載の配線基板の製造方法。
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