JP5436963B2 - 配線基板及び半導体装置 - Google Patents
配線基板及び半導体装置 Download PDFInfo
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- JP5436963B2 JP5436963B2 JP2009170469A JP2009170469A JP5436963B2 JP 5436963 B2 JP5436963 B2 JP 5436963B2 JP 2009170469 A JP2009170469 A JP 2009170469A JP 2009170469 A JP2009170469 A JP 2009170469A JP 5436963 B2 JP5436963 B2 JP 5436963B2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
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- 239000007769 metal material Substances 0.000 description 4
- 229910052863 mullite Inorganic materials 0.000 description 4
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- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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Description
[第1の実施の形態に係る半導体装置の構造]
始めに、第1の実施の形態に係る半導体装置の構造について説明する。図3は、第1の実施の形態に係る半導体装置を例示する断面図である。図3において、X方向は後述するコア基板13の一方の面13aと平行な方向、Y方向はX方向に垂直な方向(紙面奥行き方向)、Z方向はX方向及びY方向に垂直な方向(コア基板13の厚さ方向)をそれぞれ示している。
続いて、第1の実施の形態に係る半導体装置の製造方法について説明する。図6〜図15は、第1の実施の形態に係る半導体装置の製造工程を例示する図である。図6〜図15において、図3に示す半導体装置1と同一構成部分には同一符号を付し、その説明を省略する場合がある。
第1の実施の形態の変形例では、第1の実施の形態に係る半導体装置1の半導体素子30が実装されていない領域に、キャパシタを形成する例を示す。
図21は、第2の実施の形態に係る半導体装置を例示する断面図である。なお、図21は、後述する図22のC−C線に沿う断面を示している。図21において、図3に示す半導体装置1と同一構成部分には同一符号を付し、その説明を省略する場合がある。図21において、X方向はコア基板13の一方の面13aと平行な方向、Y方向はX方向に垂直な方向(紙面奥行き方向)、Z方向はX方向及びY方向に垂直な方向(コア基板13の厚さ方向)をそれぞれ示している。
10、10A 配線基板
11 絶縁性基材
11x 貫通孔
12 線状導体
13 コア基板
13a コア基板13の一方の面
13b コア基板13の他方の面
14 第1絶縁層
14x、14y 第1ビアホール
15 第2絶縁層
15x 第2ビアホール
16 第3絶縁層
16x 第3ビアホール
17 第1ソルダーレジスト層
18 第2ソルダーレジスト層
17x、18x、23x 開口部
21 第1配線層
21a、22a、23a、24a、25a 信号配線
21b、22b、23b、23d、24b、25b グランド配線
21c、22c、22d、23c、24c、25c 電源配線
22 第2配線層
23 第3配線層
24 第4配線層
25 第5配線層
28 第1はんだバンプ
29 第2はんだバンプ
30 半導体素子
d1、d2、d3 距離
P 間隔
φ1 直径
Claims (10)
- 無機誘電体を含む絶縁性基材と、前記絶縁性基材の一方の面から他方の面に貫通する複数の線状導体と、を備えたコア基板と、
前記コア基板の一方の面に形成された帯状の第1グランド配線と、前記コア基板の他方の面に前記コア基板を介して前記帯状の第1グランド配線と対向配置されるとともに前記複数の線状導体の一部を介して前記帯状の第1グランド配線と電気的に接続された帯状の第2グランド配線と、を備えたグランド配線群と、
前記コア基板の一方の面に配置された帯状の第1電源配線と、前記コア基板の他方の面に前記コア基板を介して前記帯状の第1電源配線と対向配置されるとともに前記複数の線状導体の一部を介して前記帯状の第1電源配線と電気的に接続された帯状の第2電源配線と、を備えた電源配線群と、を有し、
前記グランド配線群と前記電源配線群とは、前記絶縁性基材を介して交互に配置されており、
前記グランド配線群において、前記コア基板を介して対向配置された一対の前記第1グランド配線と前記第2グランド配線とを接続する線状導体は、一端部が前記第1グランド配線と接続され、他端部が前記第2グランド配線と接続され、
前記電源配線群において、前記コア基板を介して対向配置された一対の前記第1電源配線と前記第2電源配線とを接続する線状導体は、一端部が前記第1電源配線と接続され、他端部が前記第2電源配線と接続され、
前記グランド配線群と前記電源配線群とでキャパシタを構成し、
前記線状導体は、隣接する前記線状導体間の距離が、前記線状導体の径よりも小さくなるように配置され、
前記グランド配線群と前記電源配線群との間には、電気的に接続されていない孤立した線状導体が配置されている配線基板。 - 前記グランド配線群と前記電源配線群は同一方向に交互に配置されている請求項1記載の配線基板。
- 前記第1グランド配線と前記第1電源配線との対向する部分はそれぞれ凹凸を有し、前記第1電源配線の凹部は前記第1グランド配線の凸部と対応し、前記第1電源配線の凸部は前記第1グランド配線の凹部と対応して配置され、
前記第2グランド配線と前記第2電源配線との対向する部分はそれぞれ凹凸を有し、前記第2電源配線の凹部は前記第2グランド配線の凸部と対応し、前記第2電源配線の凸部は前記第2グランド配線の凹部と対応して配置されている請求項1又は2記載の配線基板。 - 前記コア基板の一方の面に形成された、水玉模様状に点在する第1導電層と、
前記コア基板の他方の面に形成された、前記第1導電層と対向配置された前記第1導電層よりも面積の大きい開口部を有する第2導電層と、を更に有し、
前記第1導電層は、前記電源配線群又は前記グランド配線群の一方と電気的に接続され、前記第2導電層は、前記電源配線群又は前記グランド配線群の他方と電気的に接続されている請求項1乃至3の何れか一項記載の配線基板。 - 前記グランド配線群と前記電源配線群とを複数個有する請求項1乃至4の何れか一項記載の配線基板。
- 前記線状導体は、信号配線と接続されている線状導体と、前記信号配線と接続されている線状導体の周囲に位置する線状導体と、を有し、
前記周囲に位置する線状導体は、グランド配線と接続されている請求項1乃至5の何れか一項記載の配線基板。 - 前記信号配線と接続されている線状導体と前記周囲に位置する線状導体との間には、電気的に接続されていない孤立した線状導体が配置されている請求項6記載の配線基板。
- 前記線状導体の径は、30nm〜2000nmである請求項1乃至7の何れか一項記載の配線基板。
- 請求項1乃至8の何れか一項記載の配線基板と、
前記配線基板上に実装された半導体素子と、を有し、
前記帯状の第1グランド配線は、前記半導体素子のグランドに対応する複数の電極端子の垂直直下に配置され、
前記帯状の第1電源配線は、前記半導体素子の電源に対応する複数の電極端子の垂直直下に配置されている半導体装置。 - 前記半導体素子の信号に対応する電極端子の垂直直下に位置する前記コア基板の一方の面に、前記電極端子と電気的に接続されたパッドが設けられ、
前記パッドの一部は、前記コア基板の一方の面において引き回されることなく前記複数の線状導体を介して前記コア基板の他方の面に接続され、前記コア基板の他方の面において引き回される請求項9記載の半導体装置。
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JP6282425B2 (ja) * | 2012-10-29 | 2018-02-21 | 新光電気工業株式会社 | 配線基板の製造方法 |
JP2014192176A (ja) * | 2013-03-26 | 2014-10-06 | Ngk Spark Plug Co Ltd | 配線基板 |
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TW201539596A (zh) * | 2014-04-09 | 2015-10-16 | Tong Hsing Electronic Ind Ltd | 中介體及其製造方法 |
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JP2016106427A (ja) * | 2016-03-03 | 2016-06-16 | 京セラサーキットソリューションズ株式会社 | 配線基板の製造方法および実装構造体の製造方法 |
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JP7391184B2 (ja) * | 2020-03-25 | 2023-12-04 | 京セラ株式会社 | 配線基板 |
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