JP2013004576A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2013004576A JP2013004576A JP2011131251A JP2011131251A JP2013004576A JP 2013004576 A JP2013004576 A JP 2013004576A JP 2011131251 A JP2011131251 A JP 2011131251A JP 2011131251 A JP2011131251 A JP 2011131251A JP 2013004576 A JP2013004576 A JP 2013004576A
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- semiconductor device
- core substrate
- semiconductor element
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 252
- 229910052751 metal Inorganic materials 0.000 claims abstract description 381
- 239000002184 metal Substances 0.000 claims abstract description 381
- 239000000758 substrate Substances 0.000 claims abstract description 176
- 230000000149 penetrating effect Effects 0.000 claims abstract description 20
- 230000004308 accommodation Effects 0.000 claims abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims description 78
- 239000004020 conductor Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract 3
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 69
- 230000004048 modification Effects 0.000 description 51
- 238000012986 modification Methods 0.000 description 51
- 239000010949 copper Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 31
- 229910052802 copper Inorganic materials 0.000 description 28
- 239000011347 resin Substances 0.000 description 25
- 229920005989 resin Polymers 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000003755 preservative agent Substances 0.000 description 3
- 230000002335 preservative effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JPJZHBHNQJPGSG-UHFFFAOYSA-N titanium;zirconium;tetrahydrate Chemical compound O.O.O.O.[Ti].[Zr] JPJZHBHNQJPGSG-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1035—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1094—Thermal management, e.g. cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】本半導体装置は、コア基板と、前記コア基板を一方の面から他方の面に貫通する半導体素子収容孔と、回路形成面を前記一方の面側に向けて前記半導体素子収容孔に収容された半導体素子と、前記半導体素子の背面に形成された第1の金属膜と、前記コア基板の前記他方の面に形成された第2の金属膜と、前記第1の金属膜及び前記第2の金属膜を被覆する絶縁層と、前記絶縁層上に形成され、前記絶縁層を貫通するビア配線を介して前記第1の金属膜と前記第2の金属膜とを接続する第3の金属膜と、を有する。
【選択図】図1
Description
[第1の実施の形態に係る半導体装置の構造]
まず、第1の実施の形態に係る半導体装置の構造について説明する。図1は、第1の実施の形態に係る半導体装置を例示する断面図である。図2は、図1のA部を拡大して例示する斜視透視図である。ただし、図2において、一部の構成要素は省略されている。図1及び図2において、X方向は後述するコア基板13の一方の面13aと平行な方向、Y方向はX方向に垂直な方向(紙面奥行き方向)、Z方向はX方向及びY方向に垂直な方向(コア基板13の厚さ方向)をそれぞれ示している。
次に、第1の実施の形態に係る半導体装置の製造方法について説明する。図4〜図11は、第1の実施の形態に係る半導体装置の製造工程を例示する図である。
第1の実施の形態の変形例1では、半導体装置1とは金属膜25の形態が異なる半導体装置1Aを例示する。なお、第1の実施の形態の変形例1において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第1の実施の形態の変形例2では、線状導体を有さないコア基板を用いる例を示す。なお、第1の実施の形態の変形例2において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第1の実施の形態の変形例3では、線状導体を有さないコア基板を用いる他の例を示す。なお、第1の実施の形態の変形例3において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第1の実施の形態の変形例4では、第1の実施の形態よりも熱拡散性及び放熱性を更に向上する例を示す。なお、第1の実施の形態の変形例4において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第2の実施の形態では、半導体装置1を積層した半導体装置の例を示す。なお、第2の実施の形態において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第2の実施の形態の変形例1では、第2の実施の形態よりも熱拡散性及び放熱性を更に向上する例を示す。なお、第2の実施の形態の変形例1において、既に説明した実施の形態と同一構成部品についての説明は省略する。
第2の実施の形態の変形例2では、第2の実施の形態よりも熱拡散性及び放熱性を更に向上する他の例を示す。なお、第2の実施の形態の変形例2において、既に説明した実施の形態と同一構成部品についての説明は省略する。
10 半導体素子
10a 電極パッド
11、11B、11C、11D、11E 基板本体
11x、11y、11z、13x 貫通孔
12 線状導体
12B、12C 貫通配線
13、13B、13C、13D、13E コア基板
13a コア基板の一方の面
13b コア基板の他方の面
13y 隙間
13z コア基板の周縁部
14 絶縁性樹脂
15、17、25、27 金属膜
15a、25a、27a 信号用金属膜
15b、25b、25c、25d、27b 放熱用金属膜
16、26、46C 絶縁層
16x 第1ビアホール
18、28 ソルダーレジスト層
18x、18y、28x、28y 開口部
19、29 はんだバンプ
26x 第2ビアホール
30 支持体
35 金属柱
P 間隔
φ1 直径
Claims (10)
- コア基板と、
前記コア基板を一方の面から他方の面に貫通する半導体素子収容孔と、
回路形成面を前記一方の面側に向けて前記半導体素子収容孔に収容された半導体素子と、
前記半導体素子の背面に形成された第1の金属膜と、
前記コア基板の前記他方の面に形成された第2の金属膜と、
前記第1の金属膜及び前記第2の金属膜を被覆する絶縁層と、
前記絶縁層上に形成され、前記絶縁層を貫通するビア配線を介して前記第1の金属膜と前記第2の金属膜とを接続する第3の金属膜と、を有する半導体装置。 - コア基板と、
前記コア基板の一方の面から他方の面に貫通する半導体素子収容孔と、
回路形成面を前記一方の面側に向けて前記半導体素子収容孔に収容された半導体素子と、
前記半導体素子の背面に形成された第1の金属膜と、
前記コア基板の前記他方の面に形成された第2の金属膜と、
前記第1の金属膜及び前記第2の金属膜を被覆する絶縁層と、を有し、
前記第1の金属膜と前記第2の金属膜とは一体に形成されている半導体装置。 - 前記第1の金属膜と前記第2の金属膜とは一体に形成されている請求項1記載の半導体装置。
- 前記コア基板は、無機誘電体を含む絶縁性基材と、前記絶縁性基材の一方の面から他方の面に貫通する複数の線状導体と、を備え、
前記複数の線状導体の一部は、前記第2の金属膜と接続されている請求項1乃至3の何れか一項記載の半導体装置。 - 前記コア基板の前記一方の面に形成された第4の金属膜を更に有し、
第4の金属膜は、前記複数の線状導体の一部を介して、前記第2の金属膜と接続されている請求項4記載の半導体装置。 - 前記第2の金属膜は、前記コア基板の周縁部に延在しており、前記コア基板の周縁部に延在する前記第2の金属膜は、前記絶縁層から露出している請求項1乃至5の何れか一項記載の半導体装置。
- 前記コア基板の側壁は、平面視において、凹凸が連続する形状とされている請求項6記載の半導体装置。
- 前記各金属膜は、放熱経路を構成している請求項1乃至7の何れか一項記載の半導体装置。
- 請求項1乃至8の何れか一項記載の半導体装置を複数個積層し、相互に電気的に接続した半導体装置。
- 複数個積層した前記半導体装置のうちの隣接する半導体装置に形成された何れかの金属膜同士を、金属柱を介して接続した請求項9記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011131251A JP2013004576A (ja) | 2011-06-13 | 2011-06-13 | 半導体装置 |
US13/493,123 US8664764B2 (en) | 2011-06-13 | 2012-06-11 | Semiconductor device including a core substrate and a semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011131251A JP2013004576A (ja) | 2011-06-13 | 2011-06-13 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013004576A true JP2013004576A (ja) | 2013-01-07 |
JP2013004576A5 JP2013004576A5 (ja) | 2014-07-03 |
Family
ID=47292477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011131251A Pending JP2013004576A (ja) | 2011-06-13 | 2011-06-13 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8664764B2 (ja) |
JP (1) | JP2013004576A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082447A (ja) * | 2012-09-26 | 2014-05-08 | Fujifilm Corp | 多層基板および半導体パッケージ |
WO2014156025A1 (ja) * | 2013-03-26 | 2014-10-02 | 田中貴金属工業株式会社 | 半導体装置及び放熱機構 |
JPWO2013073082A1 (ja) * | 2011-11-16 | 2015-04-02 | パナソニック株式会社 | 拡張型半導体チップ及び半導体装置 |
JP2016195238A (ja) * | 2015-03-31 | 2016-11-17 | 新光電気工業株式会社 | 配線基板及び半導体パッケージ |
JP2021502706A (ja) * | 2017-11-10 | 2021-01-28 | エルペーカーエフ レーザー ウント エレクトロニクス アーゲー | 半導体ウェハの集積方法及び装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012256675A (ja) * | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びその製造方法 |
US9030017B2 (en) | 2012-11-13 | 2015-05-12 | Invensas Corporation | Z-connection using electroless plating |
US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
CN104185365B (zh) * | 2013-05-23 | 2018-06-26 | 比亚迪股份有限公司 | 一种线路板及其制备方法 |
JP6031060B2 (ja) * | 2014-03-31 | 2016-11-24 | 信越化学工業株式会社 | 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 |
CN105118815B (zh) * | 2015-08-13 | 2017-09-29 | 上海航天电子通讯设备研究所 | 一种基于铝基板的三维封装用垂直互连结构及其制备方法 |
KR102561987B1 (ko) * | 2017-01-11 | 2023-07-31 | 삼성전기주식회사 | 반도체 패키지와 그 제조 방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0433396A (ja) * | 1990-05-30 | 1992-02-04 | Fujitsu Ltd | 空気層を有するセラミック多層プリント板 |
JP2004153084A (ja) * | 2002-10-31 | 2004-05-27 | Denso Corp | 多層配線基板の製造方法及び多層配線基板 |
JP2006019342A (ja) * | 2004-06-30 | 2006-01-19 | Tdk Corp | 半導体ic内蔵基板 |
WO2007069789A1 (ja) * | 2005-12-16 | 2007-06-21 | Ibiden Co., Ltd. | 多層プリント配線板およびその製造方法 |
JP2008091471A (ja) * | 2006-09-29 | 2008-04-17 | Tdk Corp | 半導体内蔵基板及びその製造方法 |
JP2011023626A (ja) * | 2009-07-17 | 2011-02-03 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW472330B (en) * | 1999-08-26 | 2002-01-11 | Toshiba Corp | Semiconductor device and the manufacturing method thereof |
US6392301B1 (en) * | 1999-10-22 | 2002-05-21 | Intel Corporation | Chip package and method |
US8193092B2 (en) * | 2007-07-31 | 2012-06-05 | Micron Technology, Inc. | Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices |
TWI328423B (en) * | 2007-09-14 | 2010-08-01 | Unimicron Technology Corp | Circuit board structure having heat-dissipating structure |
JP5284235B2 (ja) * | 2008-09-29 | 2013-09-11 | 日本特殊陶業株式会社 | 半導体パッケージ |
JP5249132B2 (ja) * | 2009-06-03 | 2013-07-31 | 新光電気工業株式会社 | 配線基板 |
JP5280945B2 (ja) * | 2009-06-19 | 2013-09-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US20120147592A1 (en) * | 2009-09-04 | 2012-06-14 | Sharp Kabushiki Kaisha | Electronic package, lighting device, and display device |
-
2011
- 2011-06-13 JP JP2011131251A patent/JP2013004576A/ja active Pending
-
2012
- 2012-06-11 US US13/493,123 patent/US8664764B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0433396A (ja) * | 1990-05-30 | 1992-02-04 | Fujitsu Ltd | 空気層を有するセラミック多層プリント板 |
JP2004153084A (ja) * | 2002-10-31 | 2004-05-27 | Denso Corp | 多層配線基板の製造方法及び多層配線基板 |
JP2006019342A (ja) * | 2004-06-30 | 2006-01-19 | Tdk Corp | 半導体ic内蔵基板 |
WO2007069789A1 (ja) * | 2005-12-16 | 2007-06-21 | Ibiden Co., Ltd. | 多層プリント配線板およびその製造方法 |
JP2008091471A (ja) * | 2006-09-29 | 2008-04-17 | Tdk Corp | 半導体内蔵基板及びその製造方法 |
JP2011023626A (ja) * | 2009-07-17 | 2011-02-03 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2013073082A1 (ja) * | 2011-11-16 | 2015-04-02 | パナソニック株式会社 | 拡張型半導体チップ及び半導体装置 |
JP2014082447A (ja) * | 2012-09-26 | 2014-05-08 | Fujifilm Corp | 多層基板および半導体パッケージ |
WO2014156025A1 (ja) * | 2013-03-26 | 2014-10-02 | 田中貴金属工業株式会社 | 半導体装置及び放熱機構 |
JP2014192209A (ja) * | 2013-03-26 | 2014-10-06 | Tanaka Kikinzoku Kogyo Kk | 半導体装置及び放熱機構 |
US9607922B2 (en) | 2013-03-26 | 2017-03-28 | Tanaka Kikinzoku Kogyo K.K. | Semiconductor device and heat-dissipating mechanism |
JP2016195238A (ja) * | 2015-03-31 | 2016-11-17 | 新光電気工業株式会社 | 配線基板及び半導体パッケージ |
JP2021502706A (ja) * | 2017-11-10 | 2021-01-28 | エルペーカーエフ レーザー ウント エレクトロニクス アーゲー | 半導体ウェハの集積方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
US20120313245A1 (en) | 2012-12-13 |
US8664764B2 (en) | 2014-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2013004576A (ja) | 半導体装置 | |
JP5280309B2 (ja) | 半導体装置及びその製造方法 | |
JP4695192B2 (ja) | インターポーザ | |
TWI508196B (zh) | 具有內建加強層之凹穴基板之製造方法 | |
US8324513B2 (en) | Wiring substrate and semiconductor apparatus including the wiring substrate | |
JP5436963B2 (ja) | 配線基板及び半導体装置 | |
US20140251658A1 (en) | Thermally enhanced wiring board with built-in heat sink and build-up circuitry | |
JP6539992B2 (ja) | 配線回路基板、半導体装置、配線回路基板の製造方法、半導体装置の製造方法 | |
TWI487450B (zh) | 佈線基板及其製造方法 | |
TWI523591B (zh) | 佈線基板之製造方法 | |
JP5249132B2 (ja) | 配線基板 | |
JP6606331B2 (ja) | 電子装置 | |
KR101696705B1 (ko) | 칩 내장형 pcb 및 그 제조 방법과, 그 적층 패키지 | |
TW201507556A (zh) | 具有散熱墊及電性突柱之散熱增益型線路板 | |
TW201826451A (zh) | 半導體裝置及其製造方法 | |
WO2016114133A1 (ja) | インターポーザ、半導体装置、およびそれらの製造方法 | |
JP4759981B2 (ja) | 電子部品内蔵モジュールの製造方法 | |
JP2019067973A (ja) | 電子部品内蔵基板及びその製造方法 | |
JP2015170809A (ja) | 半導体装置および半導体装置の製造方法 | |
JP5377403B2 (ja) | 半導体装置及び回路基板の製造方法 | |
JP6375249B2 (ja) | 配線基板及びその製造方法、半導体パッケージ | |
JP5426261B2 (ja) | 半導体装置 | |
JP5980554B2 (ja) | 電気的接続部材、検査方法及び電気的接続部材の製造方法 | |
JP2008244029A (ja) | 部品内蔵配線基板、配線基板内蔵用部品 | |
JP4402256B2 (ja) | 半導体チップ塔載用配線部材の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140516 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140516 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150127 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150526 |