JP4731165B2 - ミラー容量及びスイッチング損失を低減するために改良されたmosゲートを有する装置 - Google Patents
ミラー容量及びスイッチング損失を低減するために改良されたmosゲートを有する装置 Download PDFInfo
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- JP4731165B2 JP4731165B2 JP2004531142A JP2004531142A JP4731165B2 JP 4731165 B2 JP4731165 B2 JP 4731165B2 JP 2004531142 A JP2004531142 A JP 2004531142A JP 2004531142 A JP2004531142 A JP 2004531142A JP 4731165 B2 JP4731165 B2 JP 4731165B2
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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Description
本出願は、2002年8月23日に出願された出願米国仮特許出願第60/405,369号の利益を主張するものである。
技術分野
本発明は半導体に関し、より詳細には、酸化金属半導体電界効果トランジスター(MOSFET)に関する。
Claims (19)
- ゲート構造を有する縦型MOSFETであって、前記縦型MOSFETは、一方の面に伸長したドレイン領域とソース領域を囲むウエル領域とを有し、前記ウエル領域及びソース領域は他方の面に伸張しており、前記ウエル領域は前記ソース領域および前記ドレイン領域の各々とのジャンクションを形成し、
前記ゲート構造は、前記ウエル領域および前記ドレイン領域の前記ジャンクションに対向して配置されているシールド電極と、
前記シールド電極と前記ドレイン領域および前記ウエル領域との間に配置されている第1の誘電体層と、
前記ソース領域および前記ウエル領域の前記ジャンクションに対向して配置されているスイッチ電極と、
前記スイッチ電極と前記ウエル領域およびソース領域との間に配置されている第2の誘電体層と、
前記シールド電極と前記スイッチ電極との間に配置され、前記シールド電極と前記スイッチ電極とを分離している第3の誘電体層と、を含み、
前記シールド電極は、連続的にバイアスが印加されることで前記縦型MOSFETを伝導状態にするとともに前記スイッチ電極と前記ドレイン領域との間の容量を低減し、前記スイッチ電極が前記MOSFETを流れる電流を制御することを特徴とする縦型MOSFET。 - 前記第2および第3の誘電体層は同一の誘電材料の層であることを特徴とする請求項1記載の縦型MOSFET。
- 前記第1および第2の誘電体層は同一の誘電材料の層であることを特徴とする請求項1記載の縦型MOSFET。
- 前記スイッチ電極の一部と前記シールド電極の一部とが共通の面に配置されていることを特徴とする請求項1記載の縦型MOSFET。
- 前記スイッチ電極の一部と前記シールド電極の一部と前記ウエル領域の一部とが共通の面に配置されていることを特徴とする請求項1記載の縦型MOSFET。
- 前記共通の面は概して水平面であることを特徴とする請求項5の縦型MOSFET。
- 前記共通の面は概して垂直面であることを特徴とする請求項5記載の縦型MOSFET。
- 前記スイッチ電極および前記シールド電極はそれぞれ伝導性材料の層からなることを特徴とする請求項1記載の縦型MOSFET。
- 前記第1、第2および第3の誘電体層は酸化物からなることを特徴とする請求項1記載の縦型MOSFET。
- 前記ソース領域に隣り合っている前記他方の面から伸長し、前記ウエル領域を貫通して前記ドレイン領域の内部に達するトレンチを更に含み、前記トレンチ内に前記シールド電極と前記スイッチ電極が配置されて、トレンチゲート縦型MOSFETを構成していることを特徴とする請求項1記載の縦型MOSFET。
- 前記シールド電極および前記スイッチ電極は前記トレンチの深さ範囲の一部に沿って互いに重なり合っていることを特徴とする請求項10記載の縦型MOSFET。
- 前記シールド電極はシルクハット状部を有し、前記スイッチ電極は側壁と前記側壁によって規定された凹部とを有し、前記側壁が前記トレンチの深さ範囲の一部に沿って前記シルクハット状部と重なるように前記凹部内に前記シルクハット状部が少なくとも部分的に配置されている、ことを特徴とする請求項11記載の縦型MOSFET。
- 前記側壁は前記トレンチ内の深さの所定範囲において前記シルクハット状部と重なり、前記所定範囲の深さは前記ウエル領域に対応して隣り合っている、ことを特徴とする請求項12記載の縦型MOSFET。
- 前記シールド電極は凸状上部表面を有し、前記スイッチ電極は凹状下部表面を有し、前記トレンチの深さ範囲の一部に沿って前記スイッチ電極および前記シールド電極が互いに重なり合うように前記凹状下部表面は前記凸状上部表面と概して補完しあうことを特徴とする請求項11記載の縦型MOSFET。
- 前記スイッチ電極および前記シールド電極は前記トレンチ内の深さの所定範囲において互いに重なり合い、前記深さの所定範囲は前記ウエル領域に対応しかつこれに隣り合うことを特徴とする請求項14記載の縦型MOSFET。
- 前記シールド電極は凹状上部表面を有し、前記スイッチ電極は凸状下部表面を有し、前記トレンチの深さ範囲の一部に沿って前記スイッチ電極および前記シールド電極が互いに重なり合うように前記凸状下部表面は前記凹状上部表面と概して補完しあうことを特徴とする請求項11記載の縦型MOSFET。
- 前記スイッチ電極および前記シールド電極は前記トレンチ内の深さの所定範囲において互いに重なり合い、前記深さの所定範囲は前記ウエル領域に対応しかつこれに隣り合うことを特徴とする請求項14記載の縦型MOSFET。
- 前記スイッチ電極は前記ソース領域およびウエル領域を少なくとも部分的に覆って配置され、前記シールド電極は前記ウエル領域およびドレイン領域を少なくとも部分的に覆って配置された表層ゲート構造を有することを特徴とする請求項1記載の縦型MOSFET。
- 前記シールド電極および前記スイッチ電極は前記ウエル領域を覆って互いにオーバーラップしていることを特徴とする請求項18記載の縦型MOSFET。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40536902P | 2002-08-23 | 2002-08-23 | |
US60/405,369 | 2002-08-23 | ||
US10/640,742 | 2003-08-14 | ||
US10/640,742 US6870220B2 (en) | 2002-08-23 | 2003-08-14 | Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses |
PCT/US2003/026094 WO2004019380A2 (en) | 2002-08-23 | 2003-08-20 | Method and apparatus for improved mos gating to reduce miller capacitance and switching losses |
Publications (2)
Publication Number | Publication Date |
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JP2006511932A JP2006511932A (ja) | 2006-04-06 |
JP4731165B2 true JP4731165B2 (ja) | 2011-07-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004531142A Expired - Fee Related JP4731165B2 (ja) | 2002-08-23 | 2003-08-20 | ミラー容量及びスイッチング損失を低減するために改良されたmosゲートを有する装置 |
Country Status (6)
Country | Link |
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US (2) | US6870220B2 (ja) |
JP (1) | JP4731165B2 (ja) |
KR (1) | KR101015306B1 (ja) |
AU (1) | AU2003262748A1 (ja) |
DE (1) | DE10393138T5 (ja) |
WO (1) | WO2004019380A2 (ja) |
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US20050145934A1 (en) | 2005-07-07 |
AU2003262748A8 (en) | 2004-03-11 |
WO2004019380A2 (en) | 2004-03-04 |
AU2003262748A1 (en) | 2004-03-11 |
JP2006511932A (ja) | 2006-04-06 |
WO2004019380A3 (en) | 2005-12-22 |
KR101015306B1 (ko) | 2011-02-15 |
KR20050038025A (ko) | 2005-04-25 |
DE10393138T5 (de) | 2005-07-28 |
US20040113202A1 (en) | 2004-06-17 |
US6870220B2 (en) | 2005-03-22 |
US7005353B2 (en) | 2006-02-28 |
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