JP4726830B2 - リソグラフィ装置、制御システムおよびデバイス製造方法 - Google Patents
リソグラフィ装置、制御システムおよびデバイス製造方法 Download PDFInfo
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- JP4726830B2 JP4726830B2 JP2007055198A JP2007055198A JP4726830B2 JP 4726830 B2 JP4726830 B2 JP 4726830B2 JP 2007055198 A JP2007055198 A JP 2007055198A JP 2007055198 A JP2007055198 A JP 2007055198A JP 4726830 B2 JP4726830 B2 JP 4726830B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
を備える、デバイス製造方法が提供される。
Claims (10)
- 基板を保持するように構成された基板テーブルと、
パターン付けされた放射ビームを前記基板のターゲット部分に投影するように構成された投影システムと、
前記投影システムと前記基板との間の空間を液体で満たすように構成された液体供給システムと、
前記液体の温度変動に関連する効果を測定するように構成された測定システムと、
前記測定システムによって得られた測定に基づき、前記液体の温度に関連する前記効果を制御するように構成された制御システムと
を備え、
前記測定システムは、前記投影システムと前記基板との間の前記空間に配置され前記液体を通過する放射ビームの焦点および/または倍率を含む光学特性を測定する光学センサと、前記投影システムと前記基板との間の前記空間に配置された前記液体の温度を測定する温度センサとを有し、
前記制御システムは、少なくとも前記光学センサ及び前記温度センサの測定に基づき、前記液体の温度に関連する前記効果を制御し、
前記制御システムは、前記測定システムによって得られた測定に基づいてフィードバック制御を提供するように構成され、
前記液体の温度変動に関連する効果を予測するように構成され、前記基板に対する熱効果のモデルを提供するモデリングシステムを含む予測システムをさらに備え、
前記制御システムは、前記予測システムによって得られる予測に基づいてフィードフォワード制御を提供し、フィードフォワード制御を用いて熱効果を補正するために前記モデルを使用するように構成されている、
リソグラフィ装置。 - 前記制御システムは、前記測定システムの前記光学センサによって測定された光学効果に基づいて、(i)前記投影システム内のエレメント、(ii)前記放射ビームの波長、(iii)前記基板テーブルの位置、及び、(iv)前記液体の温度を調節可能であるように構成される、請求項1に記載の装置。
- 前記フィードバック制御信号は、(i)熱調整システム、(ii)基板テーブル位置決めシステム、(iii)光学エレメントが前記投影システムに含まれている光学エレメント位置決めシステム、(iv)放射ビームの波長を調節するように構成されたシステム、または(v)(i)〜(iv)のいずれかの組み合わせに供給される、請求項1に記載の装置。
- 前記制御システムは、前記測定システムの前記温度センサによって測定された温度に基づいて、(i)前記基板テーブルの位置、(ii)前記投影システム内の1つ以上の光学エレメントの位置、(iii)前記放射ビームの波長、または(iv)(i)〜(iii)のいずれかの組み合わせを調節するように構成された調節エレメントにフィードバック制御信号を供給する、請求項1に記載の装置。
- 前記投影システムと前記基板との間の前記空間よりも下流に、前記液体が流れることが可能な出口をさらに備え、
前記測定システムは、前記空間の下流の前記液体の温度を測定するために、前記空間の下流の前記流れの中に位置づけられた第2温度センサをさらに含む、請求項1に記載の装置。 - 前記制御システムは、前記空間の下流で感知された温度に基づいて、前記投影システムと前記基板との間の前記空間内の前記液体の温度を制御するために、フィードバック制御を提供するように構成されている、請求項5に記載の装置。
- 前記制御システムは、前記測定システムの前記第2温度センサによって測定された温度に基づいて、(i)前記基板テーブルの位置、(ii)前記投影システム内の1つ以上の光学エレメントの位置、(iii)前記放射ビームの波長、または(iv)(i)〜(iii)のいずれかの組み合わせを調節するように構成された調節エレメントにフィードバック制御信号を供給する、請求項6に記載の装置。
- 前記制御システムは、前記光学センサが感知した光学特性に基づいて、前記投影システムと前記基板との間の前記空間内の前記液体の温度を制御するために、フィードバック制御を提供するように構成されている、請求項1に記載の装置。
- 前記制御システムは、前記測定システムの前記光学センサによって測定された光学効果に基づいて、(i)前記基板テーブルの位置、(ii)前記投影システム内の1つ以上の光学エレメントの位置、(iii)前記放射ビームの波長、または(iv)(i)〜(iii)のいずれかの組み合わせを調節するように構成された調節エレメントにフィードバック制御信号を供給する、請求項1に記載の装置。
- 前記光学センサは、露光と露光の間の前記液体における温度変動の焦点効果を定期的に測定するように構成されている、請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/373,493 US8045134B2 (en) | 2006-03-13 | 2006-03-13 | Lithographic apparatus, control system and device manufacturing method |
US11/373,493 | 2006-03-13 |
Publications (2)
Publication Number | Publication Date |
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JP2007251161A JP2007251161A (ja) | 2007-09-27 |
JP4726830B2 true JP4726830B2 (ja) | 2011-07-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007055198A Active JP4726830B2 (ja) | 2006-03-13 | 2007-03-06 | リソグラフィ装置、制御システムおよびデバイス製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8045134B2 (ja) |
EP (1) | EP1835349B1 (ja) |
JP (1) | JP4726830B2 (ja) |
KR (1) | KR100861076B1 (ja) |
CN (1) | CN101038443B (ja) |
SG (1) | SG136068A1 (ja) |
TW (1) | TWI357537B (ja) |
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KR20100135215A (ko) * | 2008-04-30 | 2010-12-24 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법과, 디바이스 제조 방법 |
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EP1835349A1 (en) | 2007-09-19 |
US20120008113A1 (en) | 2012-01-12 |
EP1835349B1 (en) | 2013-01-30 |
TWI357537B (en) | 2012-02-01 |
JP2007251161A (ja) | 2007-09-27 |
CN101038443B (zh) | 2012-07-04 |
US20070211233A1 (en) | 2007-09-13 |
SG136068A1 (en) | 2007-10-29 |
US8045134B2 (en) | 2011-10-25 |
US9482967B2 (en) | 2016-11-01 |
TW200741367A (en) | 2007-11-01 |
KR20070093353A (ko) | 2007-09-18 |
KR100861076B1 (ko) | 2008-09-30 |
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