JP5037550B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
- Publication number
- JP5037550B2 JP5037550B2 JP2009060345A JP2009060345A JP5037550B2 JP 5037550 B2 JP5037550 B2 JP 5037550B2 JP 2009060345 A JP2009060345 A JP 2009060345A JP 2009060345 A JP2009060345 A JP 2009060345A JP 5037550 B2 JP5037550 B2 JP 5037550B2
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- substrate
- exposure
- projection system
- pattern
- patterning device
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- 239000000758 substrate Substances 0.000 claims description 70
- 230000005855 radiation Effects 0.000 claims description 44
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000000059 patterning Methods 0.000 claims description 35
- 230000004075 alteration Effects 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 7
- 238000005286 illumination Methods 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000012937 correction Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000001459 lithography Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
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- 238000007654 immersion Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
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- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (3)
- 放射ビームを調整するように構成された照明システムと、
パターニングデバイスによって前記放射ビームに付けられたパターンを基板上に投影するように配置された投影システムと、
露光中、前記投影システムの要素の加熱による投影された像の収差および/または他の誤差である計測結果が特定の閾値を超えた場合に、スループットを自動的に減少させるように配置された制御システムと、
先行して露光された基板の前記計測結果を受けるように構成された入力モジュールと、
前記基板と前記投影システムとの間の相対移動を生じさせるように構成されたポジショナと、
を含み、
前記ポジショナは、
蛇行移動を生じさせるように構成され、前記蛇行移動の各サイクルは、前記基板のターゲット部分の露光が実行されるスキャン部分、前記スキャン部分の前後にそれぞれ位置するリードイン部分およびリードアウト部分、並びに次のターゲット部分の露光のために前記基板が位置付けられる蛇行部分を含み、
前記制御システムは、
入力された前記先行して露光された前記基板の前記計測結果に応答して前記装置に要求されるスループットの減少の程度を判定し、
(1)前記基板の経路の(i)前記リードイン部分、(ii)前記リードアウト部分、(iii)前記蛇行部分、または(iv)(i)〜(iii)から選択されたいずれかの組合せを増加させ、露光と露光との間に前記投影システムを通り抜けないビームに割かれる時間を増加させることによって、前記装置のデューティサイクルを減少させること;および
(2)前記基板の経路の(v)前記スキャン部分における前記放射ビームの強度を減少させ、かつ、前記放射ビームの強度の減少に対応させて前記基板のスキャン速度を減少させること;
の双方によって、前記スループットを減少させるように構成される、
リソグラフィ装置。 - 前記制御システムは、前記露光のパラメータに基づいて、前記計測結果を予測するように配置されたモデルを含む、
請求項1に記載の装置。 - 前記露光の前記パラメータは、照明モード、ビームの強度またはパワー、結像される前記パターンのパラメータ、前記パターニングデバイスの透過率、および前記装置によって行われる露光の履歴を含むグループから選択される少なくとも1つのパラメータを含む、
請求項2に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6468708P | 2008-03-20 | 2008-03-20 | |
US61/064,687 | 2008-03-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009231832A JP2009231832A (ja) | 2009-10-08 |
JP5037550B2 true JP5037550B2 (ja) | 2012-09-26 |
Family
ID=41163716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009060345A Active JP5037550B2 (ja) | 2008-03-20 | 2009-03-13 | リソグラフィ装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9134631B2 (ja) |
JP (1) | JP5037550B2 (ja) |
NL (1) | NL1036668A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2010262A (en) * | 2012-03-07 | 2013-09-10 | Asml Netherlands Bv | Lithographic method and apparatus. |
CN108292101B (zh) * | 2015-10-01 | 2020-07-21 | Asml荷兰有限公司 | 光刻设备及器件制造方法 |
CN113227905B (zh) * | 2018-12-26 | 2024-06-11 | Asml荷兰有限公司 | 用于检查晶片的系统和方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2550579B2 (ja) * | 1987-05-25 | 1996-11-06 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP2550658B2 (ja) * | 1988-05-13 | 1996-11-06 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP3552221B2 (ja) * | 1995-09-11 | 2004-08-11 | 株式会社ニコン | 投影露光装置 |
JPH09298143A (ja) * | 1996-05-02 | 1997-11-18 | Hitachi Ltd | 露光方法および装置 |
JP3235472B2 (ja) * | 1996-06-03 | 2001-12-04 | キヤノン株式会社 | 投影露光装置及びそれを用いたデバイスの製造方法 |
JP4579367B2 (ja) * | 2000-02-15 | 2010-11-10 | キヤノン株式会社 | 走査露光装置及び走査露光方法 |
US7403264B2 (en) * | 2004-07-08 | 2008-07-22 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
-
2009
- 2009-03-05 NL NL1036668A patent/NL1036668A1/nl active Search and Examination
- 2009-03-13 JP JP2009060345A patent/JP5037550B2/ja active Active
- 2009-03-19 US US12/407,360 patent/US9134631B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9134631B2 (en) | 2015-09-15 |
US20090257034A1 (en) | 2009-10-15 |
JP2009231832A (ja) | 2009-10-08 |
NL1036668A1 (nl) | 2009-09-22 |
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