JP4714712B2 - Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ - Google Patents

Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Download PDF

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JP4714712B2
JP4714712B2 JP2007176099A JP2007176099A JP4714712B2 JP 4714712 B2 JP4714712 B2 JP 4714712B2 JP 2007176099 A JP2007176099 A JP 2007176099A JP 2007176099 A JP2007176099 A JP 2007176099A JP 4714712 B2 JP4714712 B2 JP 4714712B2
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layer
substrate
group iii
intermediate layer
iii nitride
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JP2009016531A5 (enExample
JP2009016531A (ja
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亘章 加治
久幸 三木
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Resonac Holdings Corp
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Showa Denko KK
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Priority to JP2007176099A priority Critical patent/JP4714712B2/ja
Priority to TW097124942A priority patent/TWI491064B/zh
Priority to PCT/JP2008/062072 priority patent/WO2009005126A1/ja
Priority to KR1020097026968A priority patent/KR101042417B1/ko
Priority to CN2008800221346A priority patent/CN101689592B/zh
Priority to US12/666,594 priority patent/US8674398B2/en
Publication of JP2009016531A publication Critical patent/JP2009016531A/ja
Publication of JP2009016531A5 publication Critical patent/JP2009016531A5/ja
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JP2007176099A 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Active JP4714712B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
TW097124942A TWI491064B (zh) 2007-07-04 2008-07-02 Iii族氮化物半導體發光元件及該製造方法、以及燈
KR1020097026968A KR101042417B1 (ko) 2007-07-04 2008-07-03 Ⅲ족 질화물 반도체 발광 소자 및 그의 제조 방법, 및 램프
CN2008800221346A CN101689592B (zh) 2007-07-04 2008-07-03 Ⅲ族氮化物半导体发光元件及其制造方法和灯
PCT/JP2008/062072 WO2009005126A1 (ja) 2007-07-04 2008-07-03 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
US12/666,594 US8674398B2 (en) 2007-07-04 2008-07-03 Group III nitride semiconductor light emitting device and production method thereof, and lamp

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Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

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JP2009016531A JP2009016531A (ja) 2009-01-22
JP2009016531A5 JP2009016531A5 (enExample) 2010-06-03
JP4714712B2 true JP4714712B2 (ja) 2011-06-29

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US (1) US8674398B2 (enExample)
JP (1) JP4714712B2 (enExample)
KR (1) KR101042417B1 (enExample)
CN (1) CN101689592B (enExample)
TW (1) TWI491064B (enExample)
WO (1) WO2009005126A1 (enExample)

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JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
KR101484658B1 (ko) * 2010-04-30 2015-01-21 캐논 아네르바 가부시키가이샤 에피텍셜 박막형성방법, 진공처리장치, 반도체 발광소자 제조방법, 반도체 발광소자, 및 조명장치
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
WO2014008162A1 (en) 2012-07-02 2014-01-09 Applied Materials, Inc. Aluminum-nitride buffer and active layers by physical vapor deposition
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
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