KR101042417B1 - Ⅲ족 질화물 반도체 발광 소자 및 그의 제조 방법, 및 램프 - Google Patents

Ⅲ족 질화물 반도체 발광 소자 및 그의 제조 방법, 및 램프 Download PDF

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KR101042417B1
KR101042417B1 KR1020097026968A KR20097026968A KR101042417B1 KR 101042417 B1 KR101042417 B1 KR 101042417B1 KR 1020097026968 A KR1020097026968 A KR 1020097026968A KR 20097026968 A KR20097026968 A KR 20097026968A KR 101042417 B1 KR101042417 B1 KR 101042417B1
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layer
group iii
iii nitride
nitride semiconductor
light emitting
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KR20100017917A (ko
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히로아끼 가지
히사유끼 미끼
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쇼와 덴코 가부시키가이샤
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical & Material Sciences (AREA)
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  • Nanotechnology (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020097026968A 2007-07-04 2008-07-03 Ⅲ족 질화물 반도체 발광 소자 및 그의 제조 방법, 및 램프 Active KR101042417B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JPJP-P-2007-176099 2007-07-04

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Publication Number Publication Date
KR20100017917A KR20100017917A (ko) 2010-02-16
KR101042417B1 true KR101042417B1 (ko) 2011-06-16

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US (1) US8674398B2 (enExample)
JP (1) JP4714712B2 (enExample)
KR (1) KR101042417B1 (enExample)
CN (1) CN101689592B (enExample)
TW (1) TWI491064B (enExample)
WO (1) WO2009005126A1 (enExample)

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JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
KR101484658B1 (ko) * 2010-04-30 2015-01-21 캐논 아네르바 가부시키가이샤 에피텍셜 박막형성방법, 진공처리장치, 반도체 발광소자 제조방법, 반도체 발광소자, 및 조명장치
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
CN104428441B (zh) * 2012-07-02 2017-04-12 应用材料公司 由物理气相沉积形成的氮化铝缓冲层和活性层
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
TWI553901B (zh) * 2015-09-07 2016-10-11 環球晶圓股份有限公司 紫外光發光二極體及其製造方法
WO2017094028A1 (en) * 2015-12-02 2017-06-08 Indian Institute Of Technology Bombay Method and apparatus for forming silicon doped gallium nitride (gan) films by a co-sputtering technique
JP7055595B2 (ja) * 2017-03-29 2022-04-18 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
JP7112190B2 (ja) * 2017-09-29 2022-08-03 日機装株式会社 発光装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
CN114910828B (zh) * 2022-05-16 2024-08-16 中国工程物理研究院激光聚变研究中心 一种判断量子级联激光器快速退火效果的方法

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JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
JP2001168386A (ja) 1999-09-29 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP2002252177A (ja) 2000-12-21 2002-09-06 Ngk Insulators Ltd 半導体素子
JP2005209925A (ja) 2004-01-23 2005-08-04 Nichia Chem Ind Ltd 積層半導体基板

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