WO2009005126A1 - Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ - Google Patents

Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Download PDF

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Publication number
WO2009005126A1
WO2009005126A1 PCT/JP2008/062072 JP2008062072W WO2009005126A1 WO 2009005126 A1 WO2009005126 A1 WO 2009005126A1 JP 2008062072 W JP2008062072 W JP 2008062072W WO 2009005126 A1 WO2009005126 A1 WO 2009005126A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
iii nitride
nitride semiconductor
emitting element
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062072
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English (en)
French (fr)
Japanese (ja)
Inventor
Hiroaki Kaji
Hisayuki Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to CN2008800221346A priority Critical patent/CN101689592B/zh
Priority to US12/666,594 priority patent/US8674398B2/en
Publication of WO2009005126A1 publication Critical patent/WO2009005126A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H01S5/00—Semiconductor lasers
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2008/062072 2007-07-04 2008-07-03 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Ceased WO2009005126A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800221346A CN101689592B (zh) 2007-07-04 2008-07-03 Ⅲ族氮化物半导体发光元件及其制造方法和灯
US12/666,594 US8674398B2 (en) 2007-07-04 2008-07-03 Group III nitride semiconductor light emitting device and production method thereof, and lamp

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2007-176099 2007-07-04

Publications (1)

Publication Number Publication Date
WO2009005126A1 true WO2009005126A1 (ja) 2009-01-08

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Application Number Title Priority Date Filing Date
PCT/JP2008/062072 Ceased WO2009005126A1 (ja) 2007-07-04 2008-07-03 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Country Status (6)

Country Link
US (1) US8674398B2 (enExample)
JP (1) JP4714712B2 (enExample)
KR (1) KR101042417B1 (enExample)
CN (1) CN101689592B (enExample)
TW (1) TWI491064B (enExample)
WO (1) WO2009005126A1 (enExample)

Cited By (1)

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CN114910828A (zh) * 2022-05-16 2022-08-16 中国工程物理研究院激光聚变研究中心 一种判断量子级联激光器快速退火效果的方法

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JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
KR101484658B1 (ko) * 2010-04-30 2015-01-21 캐논 아네르바 가부시키가이샤 에피텍셜 박막형성방법, 진공처리장치, 반도체 발광소자 제조방법, 반도체 발광소자, 및 조명장치
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
WO2014008162A1 (en) 2012-07-02 2014-01-09 Applied Materials, Inc. Aluminum-nitride buffer and active layers by physical vapor deposition
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
TWI553901B (zh) * 2015-09-07 2016-10-11 環球晶圓股份有限公司 紫外光發光二極體及其製造方法
WO2017094028A1 (en) * 2015-12-02 2017-06-08 Indian Institute Of Technology Bombay Method and apparatus for forming silicon doped gallium nitride (gan) films by a co-sputtering technique
JP7055595B2 (ja) * 2017-03-29 2022-04-18 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
JP7112190B2 (ja) * 2017-09-29 2022-08-03 日機装株式会社 発光装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices

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