JP2007067114A - Iii族窒化物半導体薄膜およびその製造方法並びににiii族窒化物半導体発光素子 - Google Patents
Iii族窒化物半導体薄膜およびその製造方法並びににiii族窒化物半導体発光素子 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 97
- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000010408 film Substances 0.000 claims abstract description 86
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 72
- 239000010980 sapphire Substances 0.000 claims abstract description 72
- 239000010409 thin film Substances 0.000 claims abstract description 63
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 abstract description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 238000001878 scanning electron micrograph Methods 0.000 description 22
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 11
- 238000005253 cladding Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000003877 atomic layer epitaxy Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
【解決手段】(1−102)面(いわゆるr面)のサファイア基板110上に、AlInNからなるバッファ層120をMOCVD装置を用いて、常圧のもとで基板温度が850℃〜950℃の範囲となるように制御しつつ形成し、該バッファ層120上にGaNやAlGaN等のGaN系化合物を高温でエピタキシャル成長する。これによりIII族窒化物半導体薄膜を得る。また、そのIII族窒化物半導体薄膜を基板としてIII族窒化物半導体発光素子を作成する。
【選択図】 図1
Description
まず、実施の形態1にかかるIII族窒化物半導体薄膜およびその製造方法について説明する。実施の形態1にかかるIII族窒化物半導体薄膜は、基板面を(1−102)面(いわゆるr面)としたサファイア基板と、その基板面上に形成されるAlInNのバッファ層と、そのバッファ層上に形成されるIII族窒化物成長層とからなることを特徴としている。ここで、(1−102)中の「−1」は「1」上にバーが付されることを表す。本明細書中において、ミラー指数はこれと同様に表記される。また、実施の形態1の説明では、III族窒化物成長層の一例としてGaN層を取り上げる。
つぎに、実施の形態2にかかるIII族窒化物半導体薄膜およびその製造方法ついて説明する。実施の形態2にかかるIII族窒化物半導体薄膜は、実施の形態1と同様にr面のサファイア基板を用いてIII族窒化物成長層(高温のエピ層)が形成された点において共通するが、そのサファイア基板と高温のエピ層との間に介在する層の構造が異なる。なお、この実施の形態2の説明でも、III族窒化物成長層の一例としてGaN層を取り上げる。
上述した実施の形態1および2にかかるIII族窒化物半導体薄膜は、LEDや半導体レーザなどのIII族窒化物半導体発光素子を構成する下地層として用いることができる。実施の形態3では、実施の形態1にかかるIII族窒化物半導体薄膜をLEDに適用した例を説明する。
110,210 r面サファイア基板
120 AlInNバッファ層
130,240 GaN層
220 低温バッファ層
230 中間層
2311〜231n Ga/N/GaN層またはAl/In/Ga/N層
400 III族窒化物半導体発光素子
401 r面のサファイア基板
402 AlInNバッファ層
403 アンドープGaN層
404 n型コンタクト層
405 n型クラッド層
406 n型中間層
407 活性層
408 p型ブロック層
409 p型クラッド層
410 p型コンタクト層
420 n型電極
430 p型電極
Claims (16)
- (1−102)面のサファイア基板と、
前記サファイア基板上に位置し、AlInNからなるバッファ層と、
前記バッファ層上に位置し、III族窒化物からなるエピタキシャル成長層と、
を含むことを特徴とするIII族窒化物半導体薄膜。 - 前記バッファ層の膜厚は、1〜20nmであることを特徴とする請求項1に記載のIII族窒化物半導体薄膜。
- (1−102)面のサファイア基板と、
前記サファイア基板上に位置し、III族窒化物からなるバッファ層と、
前記バッファ層上に位置し、金属からなる第1の層と窒素からなる第2の層とを含んだ多層膜が2層以上積層された中間層と、
前記中間層上に位置し、III族窒化物からなるエピタキシャル成長層と、
を含むことを特徴とするIII族窒化物半導体薄膜。 - (1−102)面のサファイア基板と、
前記サファイア基板上に位置し、金属からなる第1の層と窒素からなる第2の層とを含んだ多層膜が2層以上積層された中間層と、
前記中間層上に位置し、III族窒化物からなるエピタキシャル成長層と、
を含むことを特徴とするIII族窒化物半導体薄膜。 - 前記第1の層は、Ga、Al、およびInの少なくとも一つを含むことを特徴とする請求項3または4に記載のIII族窒化物半導体薄膜。
- 前記中間層は、Ga/N/GaNからなることを特徴とする請求項3または4に記載のIII族窒化物半導体薄膜。
- 前記中間層は、Al/In/Ga/Nからなることを特徴とする請求項3または4に記載のIII族窒化物半導体薄膜。
- 前記エピタキシャル成長層は、GaNからなることを特徴とする請求項1〜7のいずれか一つに記載のIII族窒化物半導体薄膜。
- 前記エピタキシャル成長層は、AlGaNからなることを特徴とする請求項1〜7のいずれか一つに記載のIII族窒化物半導体薄膜。
- 請求項1〜9のいずれか一つに記載のIII族窒化物半導体薄膜を含むことを特徴とするIII族窒化物半導体発光素子。
- (1−102)面のサファイア基板の温度を850℃〜950℃の範囲内に制御しつつ、該サファイア基板上にAlInNからなるバッファ層を形成するバッファ層形成ステップと、
前記サファイア基板を、前記バッファ層形成ステップで制御された前記サファイア基板の温度よりも高い温度に制御しつつ、前記バッファ層上にIII族窒化物をエピタキシャル成長する成長ステップと、
を含むことを特徴とするIII族窒化物半導体薄膜の製造方法。 - 前記バッファ形成ステップおよび前記成長ステップは、常圧で行われたことを特徴とする請求項11に記載のIII族窒化物半導体薄膜の製造方法。
- (1−102)面のサファイア基板を第1の温度に制御しつつ、該サファイア基板上にIII族窒化物からなるバッファ層を形成するバッファ層形成ステップと、
金属からなる第1の層と窒素からなる第2の層とを含んだ多層膜の形成を複数回繰り返すことによって、当該多層膜を2層以上含んだ中間層を前記バッファ層上に形成する中間層形成ステップと、
前記サファイア基板を前記第1の温度よりも高い第2の温度に制御しつつ、前記中間層上にIII族窒化物をエピタキシャル成長する成長ステップと、
を含むことを特徴とするIII族窒化物半導体薄膜の製造方法。 - 金属からなる第1の層と窒素からなる第2の層とを含んだ多層膜の形成を複数回繰り返すことによって、当該多層膜を2層以上含んだ中間層を(1−102)面のサファイア基板上に形成する中間層形成ステップと、
前記中間層上にIII族窒化物をエピタキシャル成長する成長ステップと、
を含むことを特徴とするIII族窒化物半導体薄膜の製造方法。 - 前記中間層は、Ga/N/GaNからなることを特徴とする請求項13または14に記載のIII族窒化物半導体薄膜の製造方法。
- 前記中間層は、Al/In/Ga/Nからなることを特徴とする請求項13または14に記載のIII族窒化物半導体薄膜の製造方法。
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JP2005250185A JP4939014B2 (ja) | 2005-08-30 | 2005-08-30 | Iii族窒化物半導体発光素子およびiii族窒化物半導体発光素子の製造方法 |
KR1020060036380A KR100735288B1 (ko) | 2005-08-30 | 2006-04-21 | Ⅲ족 질화물 반도체 박막과 그 제조방법, 및 ⅲ족 질화물반도체 발광소자 |
DE102006040479A DE102006040479A1 (de) | 2005-08-30 | 2006-08-29 | Gruppe III-Nitrid Halbleiterdünnfilm, Verfahren zu dessen Herstellung sowie Gruppe III-Nitrid Halbleiterleuchtvorrichtung |
TW095131926A TWI331813B (en) | 2005-08-30 | 2006-08-30 | Group iii-nitride semiconductor thin film, method for fabricating the same, and group iii-nitride semiconductor light emitting device |
US11/512,380 US7687814B2 (en) | 2005-08-30 | 2006-08-30 | Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device |
US12/612,206 US7955957B2 (en) | 2005-08-30 | 2009-11-04 | Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device |
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DE (1) | DE102006040479A1 (ja) |
TW (1) | TWI331813B (ja) |
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US7514707B2 (en) * | 2004-11-16 | 2009-04-07 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device |
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Cited By (6)
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WO2009005126A1 (ja) * | 2007-07-04 | 2009-01-08 | Showa Denko K.K. | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
JP2009016531A (ja) * | 2007-07-04 | 2009-01-22 | Showa Denko Kk | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
JP4714712B2 (ja) * | 2007-07-04 | 2011-06-29 | 昭和電工株式会社 | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
CN101689592B (zh) * | 2007-07-04 | 2011-12-28 | 昭和电工株式会社 | Ⅲ族氮化物半导体发光元件及其制造方法和灯 |
US8674398B2 (en) | 2007-07-04 | 2014-03-18 | Toyoda Gosei Co., Ltd. | Group III nitride semiconductor light emitting device and production method thereof, and lamp |
JP2015170850A (ja) * | 2014-03-10 | 2015-09-28 | 株式会社東芝 | トランジスタ素子およびその製造方法 |
Also Published As
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US20100055883A1 (en) | 2010-03-04 |
US7955957B2 (en) | 2011-06-07 |
JP4939014B2 (ja) | 2012-05-23 |
TW200802958A (en) | 2008-01-01 |
TWI331813B (en) | 2010-10-11 |
DE102006040479A1 (de) | 2007-03-22 |
KR20070025939A (ko) | 2007-03-08 |
KR100735288B1 (ko) | 2007-07-03 |
US7687814B2 (en) | 2010-03-30 |
US20070045654A1 (en) | 2007-03-01 |
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