WO2008099699A1 - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
WO2008099699A1
WO2008099699A1 PCT/JP2008/051751 JP2008051751W WO2008099699A1 WO 2008099699 A1 WO2008099699 A1 WO 2008099699A1 JP 2008051751 W JP2008051751 W JP 2008051751W WO 2008099699 A1 WO2008099699 A1 WO 2008099699A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
emitting diode
light
yin1
alxga1
Prior art date
Application number
PCT/JP2008/051751
Other languages
English (en)
French (fr)
Inventor
Atsushi Matsumura
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to US12/525,789 priority Critical patent/US8164106B2/en
Publication of WO2008099699A1 publication Critical patent/WO2008099699A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　ｎ型クラッド層、井戸層と障壁層とを含む量子井戸構造を有する発光層、中間層、及びｐ型クラッド層、がこの順番で積層される積層体を含み、前記各層の組成が組成式（ＡｌXＧａ1-X）YＩｎ1-YＰ（０≦Ｘ≦１，０＜Ｙ≦１）で表され、障壁層の組成が組成式（ＡｌXＧａ1-X）YＩｎ1-YＰ（０．５＜Ｘ≦１、０＜Ｙ≦１）で表されることを特徴とする、半導体発光ダイオード。
PCT/JP2008/051751 2007-02-05 2008-02-04 発光ダイオード WO2008099699A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/525,789 US8164106B2 (en) 2007-02-05 2008-02-04 AIGaInP light emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-025054 2007-02-05
JP2007025054A JP2008192790A (ja) 2007-02-05 2007-02-05 発光ダイオード

Publications (1)

Publication Number Publication Date
WO2008099699A1 true WO2008099699A1 (ja) 2008-08-21

Family

ID=39689943

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051751 WO2008099699A1 (ja) 2007-02-05 2008-02-04 発光ダイオード

Country Status (4)

Country Link
US (1) US8164106B2 (ja)
JP (1) JP2008192790A (ja)
TW (1) TWI383518B (ja)
WO (1) WO2008099699A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010103752A1 (ja) * 2009-03-10 2010-09-16 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
WO2010147058A1 (ja) * 2009-06-15 2010-12-23 昭和電工株式会社 植物栽培用の照明装置および植物栽培システム
WO2011016521A1 (ja) * 2009-08-07 2011-02-10 昭和電工株式会社 植物育成用の多色発光ダイオードランプ、照明装置および植物育成方法
WO2012008379A1 (ja) * 2010-07-13 2012-01-19 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5906001B2 (ja) * 2009-03-10 2016-04-20 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP2012119585A (ja) * 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP6101303B2 (ja) * 2015-04-30 2017-03-22 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237617A (ja) * 1990-08-20 2002-08-23 Toshiba Corp 半導体発光ダイオード
JP2004047973A (ja) * 2002-05-17 2004-02-12 Shin Etsu Handotai Co Ltd 発光素子の製造方法
JP2005159297A (ja) * 2003-10-30 2005-06-16 Sharp Corp 半導体発光素子およびその製造方法並びに半導体装置
JP2006253180A (ja) * 2005-03-08 2006-09-21 Sony Corp 半導体発光素子
JP2007019124A (ja) * 2005-07-06 2007-01-25 Showa Denko Kk 化合物半導体発光ダイオードおよびその製造方法
JP2007019262A (ja) * 2005-07-07 2007-01-25 Toshiba Discrete Technology Kk 半導体発光素子及び半導体発光素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153889A (en) 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JPH0371679A (ja) * 1989-08-11 1991-03-27 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JP3373561B2 (ja) 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
JP3732626B2 (ja) 1997-08-26 2006-01-05 株式会社東芝 半導体発光素子
JP3698402B2 (ja) * 1998-11-30 2005-09-21 シャープ株式会社 発光ダイオード
US6777257B2 (en) 2002-05-17 2004-08-17 Shin-Etsu Handotai Co., Ltd. Method of fabricating a light emitting device and light emitting device
JP5186093B2 (ja) * 2006-09-26 2013-04-17 スタンレー電気株式会社 半導体発光デバイス

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237617A (ja) * 1990-08-20 2002-08-23 Toshiba Corp 半導体発光ダイオード
JP2004047973A (ja) * 2002-05-17 2004-02-12 Shin Etsu Handotai Co Ltd 発光素子の製造方法
JP2005159297A (ja) * 2003-10-30 2005-06-16 Sharp Corp 半導体発光素子およびその製造方法並びに半導体装置
JP2006253180A (ja) * 2005-03-08 2006-09-21 Sony Corp 半導体発光素子
JP2007019124A (ja) * 2005-07-06 2007-01-25 Showa Denko Kk 化合物半導体発光ダイオードおよびその製造方法
JP2007019262A (ja) * 2005-07-07 2007-01-25 Toshiba Discrete Technology Kk 半導体発光素子及び半導体発光素子の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010103752A1 (ja) * 2009-03-10 2010-09-16 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置
JP2010239098A (ja) * 2009-03-10 2010-10-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
US8901584B2 (en) 2009-03-10 2014-12-02 Showa Denko K.K. Light emitting diode, light emitting diode lamp and illuminating device
WO2010147058A1 (ja) * 2009-06-15 2010-12-23 昭和電工株式会社 植物栽培用の照明装置および植物栽培システム
JP2010284127A (ja) * 2009-06-15 2010-12-24 Showa Denko Kk 植物栽培用の照明装置および植物栽培システム
WO2011016521A1 (ja) * 2009-08-07 2011-02-10 昭和電工株式会社 植物育成用の多色発光ダイオードランプ、照明装置および植物育成方法
JP5393790B2 (ja) * 2009-08-07 2014-01-22 昭和電工株式会社 植物育成用の多色発光ダイオードランプ、照明装置および植物育成方法
TWI487139B (zh) * 2009-08-07 2015-06-01 Showa Denko Kk 培育植物用多色發光二極體燈、照明裝置及培育植物方法
US9485919B2 (en) 2009-08-07 2016-11-08 Showa Denko K.K. Multicolor light emitting diode lamp for plant growth, illumination apparatus, and plant growth method
WO2012008379A1 (ja) * 2010-07-13 2012-01-19 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP2012039049A (ja) * 2010-07-13 2012-02-23 Showa Denko Kk 発光ダイオード及び発光ダイオードランプ
US9184345B2 (en) 2010-07-13 2015-11-10 Showa Denko K.K Light emitting diode and light emitting diode lamp

Also Published As

Publication number Publication date
TWI383518B (en) 2013-01-21
US20100006818A1 (en) 2010-01-14
TW200849667A (en) 2008-12-16
US8164106B2 (en) 2012-04-24
JP2008192790A (ja) 2008-08-21

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