WO2011016521A1 - 植物育成用の多色発光ダイオードランプ、照明装置および植物育成方法 - Google Patents
植物育成用の多色発光ダイオードランプ、照明装置および植物育成方法 Download PDFInfo
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- WO2011016521A1 WO2011016521A1 PCT/JP2010/063297 JP2010063297W WO2011016521A1 WO 2011016521 A1 WO2011016521 A1 WO 2011016521A1 JP 2010063297 W JP2010063297 W JP 2010063297W WO 2011016521 A1 WO2011016521 A1 WO 2011016521A1
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- emitting diode
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
- A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
- F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
Definitions
- the present invention relates to a multicolor light-emitting diode lamp for plant growth, a lighting device, and a plant growth method.
- red light having a wavelength of about 660 to 670 nm for photosynthesis is a desirable light source with high reaction efficiency.
- photosynthesis effective quantum flux density is used as light intensity. This represents the number of photons per unit time / unit area of light in the visible light region effective for photosynthesis. Red and blue are light in the visible light region that is effective for photosynthesis.
- the light intensity of the light source for plant growth is evaluated by the number of photons, that is, the photon flux ( ⁇ mol / s).
- the photon flux density ( ⁇ mol / s ⁇ m 2 ), which is a photon flux incident per unit area of the irradiated surface.
- red photon is an important factor for plant growth. Specifically, although it depends on the plant, it is desirable that many plants have a balance in which the red photon is several times (for example, 2 to 10 times) stronger than the blue photon.
- Al x Ga 1-x As has been used for the light emitting layer of the conventional red LED.
- the light emitting efficiency is lower than that of the blue LED, it has been desired to improve the light emitting efficiency.
- red LED with low luminous efficiency in order to obtain the desirable color mixture suitable for plant growth, many red LEDs are needed with respect to one blue LED. For this reason, since the number of red and blue lamps is different, a large number of red LEDs are scattered around the blue LED, making it difficult to uniformly irradiate mixed colors. Further, in order to irradiate the mixed color uniformly, it is necessary to turn on all the LEDs in a block unit in which blue is rate-limiting.
- an LED having high luminous efficiency includes aluminum phosphide, gallium, indium (composition (Al X Ga 1-X ) Y In 1-YP ; 0 ⁇ X ⁇ 1, 0 ⁇ Y ⁇ 1)
- An LED having a light emitting layer made of is known.
- the LED having the above light emitting layer has the longest wavelength of the light emitting layer having the composition of Ga 0.5 In 0.5 P, the peak wavelength is around 650 nm, and is practically used in the wavelength region longer than 655 nm. High output was difficult. For this reason, LED provided with the said light emitting layer had the problem that it was not applied as a light source for plant cultivation.
- red photon flux is larger than the blue photon flux.
- red photon flux density on the irradiated surface is greater than the blue photon flux density.
- the ratio of the red and blue photon flux densities is desirably uniform on the irradiated surface.
- a conventional light emitting diode using AlGaAs as a light emitting layer has less photon flux than a blue light emitting diode.
- the plant-growing illumination can save energy by turning off the light during the photosynthesis reaction time after irradiation.
- the lighting method it has been studied to reduce the power consumption by using a high-speed pulse method and alternating current, and the advantages of a light-emitting diode with a high response speed can be utilized.
- the lamps are red, blue and individual packages, and the number and arrangement of the lamps are irregular.
- a complicated lighting circuit is required, and there is a problem of high cost due to advanced technology and an expensive lighting device.
- space saving cannot be achieved.
- An object of the present invention is to provide a plant-growing multicolor light-emitting diode lamp, a lighting device, and a plant-growing method capable of uniformly irradiating with a good balance.
- the inventor of the present application has achieved uniform color mixing by simultaneously mounting blue and red light emitting elements in the same package that has not been put into practical use for plant growth. We focused on what we get. Then, it has been found that by adopting a red light emitting diode having a photon flux equal to or greater than that of the blue light emitting diode, the blue and red light emitting diodes can be mounted in the same package.
- a red LED with high luminous efficiency a light emitting layer of 660 nm suitable for plant growing applications composed of (Al X Ga 1-X ) Y In 1-YP (0 ⁇ X ⁇ 1, 0 ⁇ Y ⁇ 1) is studied. As a result, the inventors have found that a light amount equal to or greater than that of blue can be obtained, and devised that the red LED and the blue LED are simultaneously mounted in the same small package.
- the light emitting diode having the AlGaInP-based light emitting layer was confirmed to have a light emission output three times or more that of the LED of the AlGaAs light emitting layer in the wavelength region of 660 nm. Therefore, a multicolor light emitting diode lamp (package) suitable for plant growth was invented using this light emitting diode. Furthermore, since a uniform mixed color of blue and red emits light in a small package, the present inventors have discovered a lighting device suitable for energy saving and a plant growing method capable of independently controlling the package.
- a pn including a light emitting layer having a composition formula (Al X Ga 1-X ) Y In 1- YP (0 ⁇ X ⁇ 0.1, 0 ⁇ Y ⁇ 1) having a peak emission wavelength of 655 nm to 675 nm
- a first light-emitting diode having a junction-type light-emitting portion
- a second light-emitting diode having a light-emitting layer having a composition formula Ga X In 1-X N (0 ⁇ X ⁇ 1) having a peak light emission wavelength of 420 nm to 470 nm
- a multicolor light-emitting diode lamp for plant growth wherein B [ ⁇ mol ⁇ s ⁇ 1 ] satisfies a relationship of R> B.
- B [ ⁇ mol ⁇ s ⁇ 1 ] satisfies a relationship of R> B.
- the plant-cultivating multicolor light-emitting diode lamp according to any one of 1 to 3 is provided with two or more, and the plant-growing multicolor light-emitting diode lamps are arranged at substantially equal intervals and independently.
- An illuminating device for plant growth characterized in that it is controllable.
- the plant-growing lighting device according to item 4 wherein the number of lighting of the multicolor light-emitting diode lamps for plant growth is controllable according to the growth area of the plant.
- the preceding item 4 or 6, wherein the photon flux of the plant-growing multicolor light-emitting diode lamp can be adjusted according to the distance between the plant-growing multicolor light-emitting diode lamp and the plant. 5.
- the plant-growing lighting device according to 5. [7] The current applied to the plant-growing multicolor light-emitting diode lamp is pulse-driven, and the lighting time of the plant-growing multicolor light-emitting diode lamp can be adjusted according to the growth state of the plant.
- the plant growing lighting device according to any one of the preceding items 4 to 6, wherein [8] A light guide plate having a light extraction surface is provided, and light from the plant-growing multicolor light-emitting diode lamp incorporated from the side surface of the light guide plate can be extracted from the light extraction surface.
- control by combining one or more of the number of lighting, the photon flux, the applied current, and the pulse driving time of the plant-growing lighting device according to any one of 4 to 8 above A plant growing method characterized by the above.
- the first light emitting diode (red) having a peak light emission wavelength of 655 nm to 675 nm and the second light emitting diode (peak light emission wavelength of 420 nm to 470 nm) ( And blue) are each mounted in the same package.
- the photon flux R of the first light-emitting diode and the photon flux B of the second light-emitting diode mounted on the plant-growing multicolor light-emitting diode lamp of the present invention satisfy the relationship of R> B with the same current. Therefore, it can irradiate uniformly, maintaining the intensity ratio of red and blue suitable for plant growth.
- the plant-growing lighting device of the present invention since multi-color light emitting diode lamps for plant growth are used, light of the optimum color mixture is supplied from individual multi-color light-emitting diodes for growing a spot. be able to. Thereby, the balance of red and blue can be maintained in the central part and the peripheral part of the irradiation surface of the illumination device. Therefore, it can irradiate uniformly, maintaining the intensity ratio of red and blue suitable for plant growth.
- the multicolor light emitting diodes are arranged at substantially equal intervals and can be controlled independently, it is easy to design a lighting device that can supply light from multiple directions.
- the number of lighting of the multicolor light emitting diode lamp can be adjusted according to the growing area of the plant, and the photon flux of the multicolor light emitting diode lamp can be adjusted according to the distance between the multicolor light emitting diode lamp and the plant. Since it can be adjusted, power consumption can be reduced.
- the lighting time of the multicolor light-emitting diode lamp can be controlled according to the growth state of the plant, so that low power consumption can be achieved. it can.
- the multicolor light emitting diode lamp mixed in the package since the multicolor light emitting diode lamp mixed in the package is used, a light source of uniform light emission can be obtained by using a light guide plate.
- the multicolor light emitting diode lamp can emit multicolor light, it is an illuminating device having an edge type backlight structure that takes out the light of the multicolor light emitting diode lamp taken from the side surface of the light guide plate from the light extraction surface. be able to.
- the lighting number, photon flux, applied current, and pulse driving time of the plant growing lighting device can be controlled in combination. Therefore, according to the growth state of a plant, blue and red light can be uniformly irradiated with the optimal balance.
- FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating the multicolor light emitting diode lamp for plant cultivation which is one Embodiment of this invention, (a) is a top view, (b) is along the AA 'line shown in (a).
- FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is a figure for demonstrating the red light emitting diode used for the multicolor light emitting diode lamp for plant cultivation which is one Embodiment of this invention, (a) is a top view, (b) is B- shown in (a). It is sectional drawing along a B 'line.
- FIGS. 1A and 1B A configuration of a multicolor light emitting diode lamp for plant growth (hereinafter simply referred to as “light emitting diode lamp”), which is an embodiment to which the present invention is applied, will be described.
- the light-emitting diode lamp 10 according to the present embodiment is schematically shown in which three light-emitting diodes 20A, 20B, and 30A are independently mounted on the surface of the mount substrate 11, respectively. It is configured.
- the light emitting diodes 20A and 20B are red light emitting diodes having a peak light emitting wavelength of 655 nm to 675 nm
- the light emitting diode 30A is a peak light emitting wavelength. Is a blue light emitting diode of 420 nm or more and 470 nm or less.
- FIGS. 2A and 2B are diagrams for explaining the red light emitting diode 20 (20A, 20B) used in the present embodiment
- FIG. 2 (a) is a plan view
- FIG. 2 (b) is a cross-sectional view taken along the line BB ′ shown in FIG.
- the red light emitting diode 20 is a light emitting diode in which a compound semiconductor layer 21 and a functional substrate 22 are joined.
- the red light emitting diode 20 is roughly configured to include an n-type ohmic electrode 23 and a p-type ohmic electrode 24 provided on the main light extraction surface.
- the main light extraction surface in this embodiment is a surface of the compound semiconductor layer 21 opposite to the surface to which the functional substrate 22 is attached.
- a pn junction type light emitting unit 25 having a peak emission wavelength of 655 nm or more and 675 nm or less and a current diffusion layer 26 for planarly diffusing element driving current in the entire light emitting unit are sequentially stacked.
- a current diffusion layer 26 for planarly diffusing element driving current in the entire light emitting unit have a structure.
- the light emitting unit 25 is configured by sequentially laminating at least a p-type lower cladding layer 25A, a light emitting layer 25B, and an n-type upper cladding layer 25C on a current diffusion layer.
- the light emitting unit 25 includes a lower clad disposed opposite to the upper side and the upper side of the light emitting layer 25B in order to “confine” the light emitting layer 25B with carriers (carriers) that cause radiative recombination.
- a so-called double hetero (English abbreviation: DH) structure including the layer 25A and the upper clad layer 25C is preferable for obtaining high-intensity light emission.
- Emitting layer 25B is composed of a semiconductor layer having the composition formula (Al X Ga 1-X) Y In 1-Y P (0 ⁇ X ⁇ 0.1,0 ⁇ Y ⁇ 1).
- the light emitting layer 25B may have a double hetero structure, a single quantum well (abbreviation: SQW) structure, or a multi quantum well (abbreviation: MQW) structure, but is monochromatic. In order to obtain excellent light emission, an MQW structure is preferable.
- the layer thickness of the light emitting layer 25B is preferably in the range of 0.02 to 2 ⁇ m. Further, the conductivity type of the light emitting layer 25B is not particularly limited, and any of undoped, p-type and n-type can be selected. In order to increase the light emission efficiency, it is desirable that the crystallinity be undoped or the carrier concentration be less than 3 ⁇ 10 17 cm ⁇ 3 .
- the light emitting diode 1 having the light emitting layer 25B having the composition formula (Al X Ga 1-X ) Y In 1- YP (0 ⁇ X ⁇ 0.1, 0 ⁇ Y ⁇ 1) is a conventional AlGaAs light emitting diode.
- the wavelength range of 655 nm or more and 675 nm or less can be suitably used as illumination (light emitting diode lamp or illumination device) used for promoting photosynthesis for plant growth.
- the lower cladding layer 25A and the upper cladding layer 25C are provided on the lower surface and the upper surface of the light emitting layer 25B, respectively, as shown in FIG.
- the lower clad layer 25A and the upper clad layer 25C are configured to have different polarities.
- the carrier concentration and thickness of the lower clad layer 25A and the upper clad layer 25C can be in a known suitable range, and the conditions are preferably optimized so that the light emission efficiency of the light emitting layer 25B is increased.
- the lower cladding layer 25A is made of, for example, p-type (Al X Ga 1-X ) Y In 1-YP (0.3 ⁇ X ⁇ 1, 0 ⁇ Y ⁇ 1) doped with Mg. It is desirable to use a semiconductor material.
- the carrier concentration is preferably in the range of 2 ⁇ 10 17 to 2 ⁇ 10 18 cm ⁇ 3
- the layer thickness is preferably in the range of 0.5 to 5 ⁇ m.
- the upper cladding layer 25C for example, a semiconductor made of n-type (Al X Ga 1-X ) Y In 1-YP (0.3 ⁇ X ⁇ 1, 0 ⁇ Y ⁇ 1) doped with Si is used. It is desirable to use materials.
- the carrier concentration is preferably in the range of 1 ⁇ 10 17 to 1 ⁇ 10 18 cm ⁇ 3 , and the layer thickness is preferably in the range of 0.5 to 2 ⁇ m.
- the polarities of the lower clad layer 25A and the upper clad layer 25C can be appropriately selected in consideration of the element structure of the compound semiconductor layer 21.
- each intermediate layer is preferably composed of a semiconductor material having a band gap between the two layers.
- a contact layer for lowering the contact resistance of the ohmic electrode, a current blocking layer for limiting a region through which the element driving current flows, a current constricting layer, and the like are disposed above the constituent layers of the light emitting unit 25.
- the layer structure can be provided.
- the current diffusion layer 26 is provided below the light emitting unit 25 in order to diffuse the element driving current in a planar manner throughout the light emitting unit 25.
- the red light emitting diode 20 can emit light uniformly from the light emitting unit 25.
- the current spreading layer 26 can be applied to the material having a composition of (Al X Ga 1-X) Y In 1-Y P (0 ⁇ X ⁇ 0.7,0 ⁇ Y ⁇ 1). As the current diffusion layer 26, it is most preferable to use GaP not containing Al.
- the functional substrate 22 is bonded to the current diffusion layer 26 side that constitutes the compound semiconductor layer 21.
- the functional substrate 22 has sufficient strength to mechanically support the light emitting unit 25, and has a wide band for allowing the light emitted from the light emitting unit 25 to pass through.
- the light emitted from the light emitting layer 25B It is made of a material that is optically transparent to the wavelength.
- III-V compound semiconductor crystal such as gallium phosphide (GaP), aluminum arsenide / gallium (AlGaAs), gallium nitride (GaN), II-VI such as zinc sulfide (ZnS) and zinc selenide (ZnSe)
- GaP gallium phosphide
- AlGaAs aluminum arsenide / gallium
- GaN gallium nitride
- II-VI such as zinc sulfide (ZnS) and zinc selenide (ZnSe)
- group IV compound semiconductor crystal such as hexagonal or cubic silicon carbide (SiC)
- SiC hexagonal or cubic silicon carbide
- insulating substrate such as glass and sapphire.
- a functional substrate having a highly reflective surface on the bonding surface can also be selected.
- a metal substrate or alloy substrate made of silver, gold, copper, aluminum or the like on the surface, or a composite substrate in which a metal mirror structure is formed on a semiconductor can be selected. It is most desirable to select from the same material as the strain adjustment layer that is not affected by the strain caused by bonding.
- the functional substrate 22 preferably has a thickness of, for example, about 50 ⁇ m or more in order to support the light emitting unit 25 with sufficient mechanical strength. Further, in order to facilitate mechanical processing of the functional substrate 22 after bonding to the compound semiconductor layer 21, it is preferable that the thickness does not exceed about 300 ⁇ m.
- the side surface of the functional substrate 22 is a vertical surface 22a that is substantially perpendicular to the main light extraction surface on the side close to the compound semiconductor layer 21, and the compound semiconductor layer
- the inclined surface 22 b is inclined inward with respect to the main light extraction surface on the side far from 21.
- the light emitted from the light emitting layer 25B to the functional substrate 22 side can be efficiently extracted to the outside.
- part of the light emitted from the light emitting layer 25B to the functional substrate 22 side is reflected by the vertical surface 22a and can be extracted by the inclined surface 22b.
- the light reflected by the inclined surface 22b can be extracted by the vertical surface 22a.
- the light extraction efficiency can be increased by the synergistic effect of the vertical surface 22a and the inclined surface 22b.
- the angle ⁇ formed by the inclined surface 22b and the surface parallel to the light emitting surface is preferably in the range of 55 to 80 degrees.
- the width (thickness direction) of the vertical surface 22a is preferably in the range of 30 ⁇ m to 100 ⁇ m.
- the inclined surface 22b of the functional substrate 22 is preferably roughened.
- an effect of increasing the light extraction efficiency at the inclined surface 22b can be obtained. That is, by roughening the inclined surface 22b, total reflection on the inclined surface 22b can be suppressed and light extraction efficiency can be increased.
- the bonding interface between the compound semiconductor layer 21 and the functional substrate 22 may be a high resistance layer. That is, a high resistance layer (not shown) may be provided between the compound semiconductor layer 21 and the functional substrate 22. This high resistance layer exhibits a higher resistance value than that of the functional substrate 22, and when the high resistance layer is provided, the compound semiconductor layer 21 in the reverse direction from the current diffusion layer 26 side to the functional substrate 22 side. It has a function of reducing current.
- a junction structure that exhibits a withstand voltage against a reverse voltage applied inadvertently from the functional substrate 22 side to the current diffusion layer 26 side is configured, but the breakdown voltage is a pn junction. It is preferable that the voltage is lower than the reverse voltage of the light emitting unit 25 of the mold.
- the n-type ohmic electrode 23 and the p-type ohmic electrode 24 are low-resistance ohmic contact electrodes provided on the main light extraction surface of the red light emitting diode 20.
- the n-type ohmic electrode 23 is provided above the upper clad layer 25C, and for example, an alloy made of AuGe, Ni alloy / Au can be used.
- the p-type ohmic electrode 24 can be made of an alloy made of AuBe / Au on the exposed surface of the current diffusion layer 26.
- the p-type ohmic electrode 24 on the current diffusion layer 26 in order to reduce the operating voltage and increase the efficiency. An effect is acquired by setting it as such a structure.
- the n-type ohmic electrode 23 and the p-type ohmic electrode 24 are arranged at diagonal positions as shown in FIG.
- the p-type ohmic electrode 24 is most preferably surrounded by the compound semiconductor layer 21.
- the n-type ohmic electrode 23 has a network such as a honeycomb or a lattice shape. With such a configuration, an effect of improving reliability can be obtained. Further, by using the lattice shape, a current can be uniformly injected into the light emitting layer 25B, and as a result, an effect of improving reliability can be obtained.
- the n-type ohmic electrode 23 is preferably composed of a pad-shaped electrode (pad electrode) and a linear electrode (linear electrode) having a width of 10 ⁇ m or less. With such a configuration, high luminance can be achieved. Furthermore, by reducing the width of the linear electrode, the opening area of the light extraction surface can be increased, and high luminance can be achieved.
- connection layer 27 is preferably provided on the bottom surface of the functional substrate 22 as shown in FIG.
- the connection layer 27 for example, a laminated structure including a reflection layer, a barrier layer, and a connection layer can be used.
- the reflective layer metals having high reflectivity, such as silver, gold, aluminum, platinum, and alloys of these metals can be used.
- An oxide film made of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO) can be provided between the functional substrate 3 and the reflective layer.
- ITO indium tin oxide
- IZO indium zinc oxide
- the barrier layer for example, a refractory metal such as tungsten, molybdenum, titanium, platinum, chromium, or tantalum can be used.
- a low-melting eutectic metal such as AuSn, AuGe, or AuSi can be used.
- FIGS. 3A and 3B are diagrams for explaining the blue light emitting diode 30 (30A) used in this embodiment
- FIG. 3 (a) is a plan view
- FIG. 3 (b) is a diagram.
- FIG. 3 is a cross-sectional view taken along line BB ′ shown in FIG.
- the blue light emitting diode 30 includes a semiconductor layer in which an n-type semiconductor layer 32, a light-emitting layer 33, and a p-type semiconductor layer 34 are sequentially stacked on a substrate 31.
- a transparent conductive film (not shown) is formed on the p-type semiconductor layer 34 and is roughly configured.
- a buffer layer and a base layer are sequentially formed on the substrate 31, and an n-type semiconductor layer 32 constituting the semiconductor layer 35 is stacked on the base layer.
- a positive electrode 36 is provided on the transparent conductive film, and a negative electrode 37 is provided in an exposed region of the n-type semiconductor layer 32 exposed by removing a part of the semiconductor layer 35.
- the material that can be used for the substrate 31 in the blue light emitting diode 30 of the present embodiment is not particularly limited as long as a group III nitride semiconductor crystal or the like is a substrate material that is epitaxially grown on the surface, and various materials are selected and used. be able to.
- a group III nitride semiconductor crystal or the like is a substrate material that is epitaxially grown on the surface, and various materials are selected and used. be able to.
- sapphire, SiC, silicon or the like can be used as the material of the substrate 31.
- the buffer layer is provided as a layer that matches the difference in lattice constant between the substrate 31 and the layer made of the group III nitride semiconductor, and is made of, for example, a group III nitride such as single crystal AlGaN or AlN.
- a group III nitride such as single crystal AlGaN or AlN.
- Each of the base layer, the n-type semiconductor layer 32, the light emitting layer 33, and the p-type semiconductor layer 34 provided on the buffer layer is made of, for example, a group III nitride-based semiconductor, and has a composition formula Ga X In 1-X N ( A gallium nitride compound semiconductor represented by 0 ⁇ X ⁇ 1) can be used without any limitation.
- the underlayer for example, a group III nitride compound containing Ga, that is, a GaN-based compound semiconductor is used, and single crystal GaN can be particularly preferably used.
- the n-type semiconductor layer 32 is formed by sequentially laminating an n-type contact layer and an n-type clad layer (not shown).
- the n-type contact layer for example, similarly to the base layer can be used Ga X In 1-X N ( 0 ⁇ X ⁇ 1), also, Si, n-type impurities such as Ge or Sn doped Preferably it is.
- the n-type cladding layer can be formed of, for example, GaN, GaInN, or the like, and can also be a heterojunction of these structures or a superlattice structure in which a plurality of layers are stacked.
- the light emitting layer 33 is an active layer that is stacked on the n-type semiconductor layer 32 and the p-type semiconductor layer 34 is stacked thereon.
- barrier layers and well layers are alternately stacked, The barrier layers are stacked in this order on the n-type semiconductor layer 32 side and the p-type semiconductor layer 34 side.
- the barrier layer include a gallium nitride compound semiconductor such as Al c Ga 1-c N (0 ⁇ c ⁇ 0.3) having a band gap energy larger than that of a well layer made of a gallium nitride compound semiconductor containing indium. Can be preferably used.
- gallium indium nitride such as Ga 1-s In s N (0 ⁇ s ⁇ 0.4) can be used as the gallium nitride compound semiconductor containing indium.
- the p-type semiconductor layer 34 is formed on the light emitting layer 33, and usually has a configuration in which a p-type cladding layer and a p-type contact layer are sequentially stacked (not shown).
- the p-type cladding layer it is preferable to use a material having a composition larger than the band gap energy of the light emitting layer 33, which will be described in detail later, and capable of confining carriers in the light emitting layer 33.
- a material having a composition of 0 ⁇ d ⁇ 0.4, preferably 0.1 ⁇ d ⁇ 0.3 is preferable.
- the p-type cladding layer contains at least Al e Ga 1-e N (0 ⁇ e ⁇ 0.5, preferably 0 ⁇ e ⁇ 0.2, more preferably 0 ⁇ e ⁇ 0.1). It is preferable to comprise from the material which becomes. Thus, when the Al composition of the p-type cladding layer is within the above range, it is preferable in terms of maintaining good crystallinity and good ohmic contact with the transparent conductive film thereon.
- the p-type semiconductor layer 34 having the above composition is preferably configured to be doped with a p-type impurity such as Mg.
- the transparent conductive film is a translucent p-type electrode provided on the p-type contact layer.
- the transparent conductive film for example, selected from ITO (In 2 O 3 —SnO 2 ), AZO (ZnO—Al 2 O 3 ), IZO (In 2 O 3 —ZnO), and GZO (ZnO—Ga 2 O 3 )
- the material containing at least one of the above can be provided by conventional means well known in the art.
- the structure of the transparent conductive film can be used without any limitation including any conventionally known structure.
- the transparent conductive film may be formed so as to cover almost the entire surface of the p-type contact layer, or may be formed in a lattice shape or a tree shape with a gap. Further, after forming the transparent conductive film, a heat treatment for alloying or transparency may or may not be performed.
- the positive electrode 36 is an electrode formed on the transparent conductive film.
- various structures using Au, Al, Ni, Cu, and the like are well known, and those of known materials and structures can be used without any limitation.
- the negative electrode 37 is an electrode formed so as to be in contact with the n-type contact layer 4 b of the n-type semiconductor layer 32.
- the negative electrode 37 is provided, a part of the p-type semiconductor layer 34, the light emitting layer 33, and the n-type semiconductor layer 32 is removed to form an exposed region of the n-type contact layer 4b, and the negative electrode 37 is formed thereon.
- the material of the negative electrode 37 negative electrodes having various compositions and structures are known, and these known negative electrodes can be used without any limitation.
- connection layer 38 is provided in the bottom face of the board
- the connection layer 38 for example, a laminated structure including a reflection layer, a barrier layer, and a connection layer can be used.
- the reflective layer metals having high reflectivity, such as silver, gold, aluminum, platinum, and alloys of these metals can be used.
- An oxide film made of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO) can be provided between the substrate 31 and the reflective layer.
- ITO indium tin oxide
- IZO indium zinc oxide
- the barrier layer for example, a refractory metal such as tungsten, molybdenum, titanium, platinum, chromium, or tantalum can be used.
- a low-melting eutectic metal such as AuSn, AuGe, or AuSi can be used.
- the configuration of the light emitting diode lamp 10 of the present embodiment will be described.
- the light-emitting diode lamp 10 according to the present embodiment is schematically shown in which three light-emitting diodes 20A, 20B, and 30A are independently mounted on the surface of the mount substrate 11, respectively. It is configured.
- a plurality of n electrode terminals 12 and p electrode terminals 13 are provided on the surface of the mount substrate 11, and the red light emitting diodes 20 ⁇ / b> A and 20 ⁇ / b> B are connected to the connection layer 27 or silver on the p electrode terminals 13 of the mount substrate 11.
- the n-type ohmic electrode 23 of the red light emitting diodes 20A and 20B and the n-electrode terminal 12 of the mount substrate 11 are respectively connected using a gold wire 15 (wire bonding), and the p-type ohmic electrode 24 and the mount substrate 11 are connected.
- a gold wire 15 wire bonding
- the blue light emitting diode 30A is fixed and supported (mounted) on the p-electrode terminal 13 with a connection layer 38 or silver (Ag) paste.
- the negative electrode 37 of the blue light emitting diode 30 ⁇ / b> A and the n electrode terminal 12 of the mount substrate 11 are connected using a gold wire 15, and the positive electrode 36 and the p electrode terminal 13 of the mount substrate 11 are connected using a gold wire 15. It is connected.
- the three light emitting diodes 20A, 20B, and 30A are independently mounted means that the three light emitting diodes 20A, 20B, and 30A are mounted so as to be electrically in parallel.
- a reflection wall 14 is erected on the surface of the mount substrate 11 so as to cover the periphery of the light emitting diodes 20A, 20B, and 30A.
- a space inside the reflection wall 14 and above the mount substrate 11 is filled with a general sealing material 16 such as silicon resin or epoxy resin.
- the light emitting diodes 20A, 20B, and 30A are sealed in the package.
- the light-emitting diode lamp 10 of the present embodiment is configured such that red and blue light-emitting diodes are mounted in the same package.
- a manufacturing method of the light emitting diode lamp 10 using the light emitting diodes 20A, 20B, and 30A that is, a mounting method of the light emitting diodes 20A, 20B, and 30A will be described.
- a predetermined number of red light emitting diodes 20 (20 ⁇ / b> A, 20 ⁇ / b> B) are mounted on the surface of the mount substrate 11.
- the mounting substrate 11 and the red light emitting diode 20 are aligned, and the red light emitting diode 20 is disposed at a predetermined position on the surface of the mounting substrate 11.
- the bonding layer 27 provided on the bottom surface of the red light emitting diode 20 is die-bonded to the surface of the mount substrate 11.
- the n-type ohmic electrode 23 of the red light emitting diode 20 and the n-electrode terminal 12 of the mount substrate 11 are connected using a gold wire 15 (wire bonding).
- the p-type ohmic electrode 24 of the red light emitting diode 20 and the p-electrode terminal 13 of the mount substrate 11 are connected using a gold wire 15.
- a predetermined number of blue light emitting diodes 30 (30A) are mounted on the surface of the mount substrate 11.
- the mount substrate 11 and the blue light emitting diode 30 are aligned, and the blue light emitting diode 30 is disposed at a predetermined position on the surface of the mount substrate 11.
- the bonding layer 38 provided on the bottom surface of the blue light emitting diode 30 is die-bonded to the surface of the mount substrate 11.
- the negative electrode 37 of the blue light emitting diode 30 and the n electrode terminal 12 of the mount substrate 11 are connected using a gold wire 15.
- the positive electrode 36 of the blue light emitting diode 30 and the p electrode terminal 13 of the mount substrate 11 are connected using the gold wire 15.
- the surface of the mount substrate 11 on which the light emitting diodes 20A, 20B, and 30A are mounted is sealed with the sealing material 16. In this manner, the light emitting diode lamp 10 of the present embodiment is manufactured.
- the light emitting diode lamp 10 can be taken out efficiently. Further, the light emitted in the circumferential direction from the light emitting portion of each of the light emitting diodes 20A, 20B, and 30A cannot be directly taken out to the outside of the light emitting diode lamp 10, but is reflected upward by the reflecting wall 14 on the surface of the mount substrate 11. be able to. As described above, the light-emitting diode lamp 10 is a light-emitting diode lamp having high luminance with improved light extraction efficiency.
- the ratio of the red photon flux (R) and the blue photon flux (B) at the same current per LED light source has an effect on plant growth. Is an important parameter. And depending on the type of plant, a more desirable result has been found when R is larger.
- the ratio of the red photon flux R to the blue photon flux B (R / B ratio) is preferably 2 to 10 times.
- the photon bundle R and the photon bundle B [ ⁇ mol ⁇ s ⁇ 1 ] can be calculated by collecting and measuring light emitted from the light emitting diode lamp.
- the photon flux density [ ⁇ mol ⁇ m ⁇ 2 ⁇ s ⁇ 1 ] is measured using an optical quantum meter, for example, with the distance from the light source being 0.2 m and the direction from the light source being the front.
- the photon flux density is used as an index of light intensity in general plant growing. In a white light source such as a fluorescent lamp, 150 ⁇ mol / s ⁇ m 2 or more is desirable.
- the LED light source of the present invention since it does not contain a color component centered on green, which is poor in plant photosynthesis efficiency, it is possible to grow plants with a small amount of photon, and if it is 100 ⁇ mol / s ⁇ m 2 or more, the desired range Presumed.
- the number of mounted red light emitting diodes 20 in the package needs to be larger than the number of mounted blue light emitting diodes 30.
- the light emitting diode lamp 10 of the present embodiment can easily change the number of mounted red light emitting diodes 20 and blue light emitting diodes 30, it is easy to provide a light emitting diode lamp having a desired R / B ratio. be able to.
- the red light emitting diode using the AlGaAs light emitting layer since the red light emitting diode using the AlGaAs light emitting layer is used, the photon flux is insufficient with respect to the GaInN blue light emitting diode. For this reason, in order to satisfy the relationship of R / B> 1, six or more red light emitting diodes are required for one blue light emitting diode. There was a problem that it was difficult to mount the LED.
- a bullet-shaped ( ⁇ 5 mm) red light emitting diode lamp 120 and a blue light emission are formed on the surface of a printed board 111 of 60 mm square.
- the diode lamps 130 are individually arranged at intervals of 20 mm.
- R / B> 1 In order to satisfy the relationship of R / B> 1, for example, as shown in FIG. 10A, a total of nine red light emitting diode lamps 120 and one blue light emitting diode lamp 130 are used.
- the unit light source is installed. For this reason, there existed a problem of causing the raise of the manufacturing cost of a lamp, and the enlargement of the size of a light source.
- the distance between the red light source and the blue light source is at least 10 mm or more, when used in a state close to the plant as the irradiated object, it is possible to maintain a uniform color mixture (R / B) with good uniformity. There was a problem that it was difficult. Therefore, the conventional mixed color light source 110 needs to secure a sufficient distance from the plant in order to maintain the uniformity of the mixed color, and there is a problem that the advantage as the LED light source cannot be fully utilized.
- the number of red light emitting diodes may be one or more for one blue light emitting diode. Blue LEDs can be mounted simultaneously. That is, the light emitting diode lamp 10 of the present embodiment is a mixed color light emitting diode.
- the distance between the red light emitting diode 20 and the blue light emitting diode 30 which are adjacent in the same package can be easily set within 5 mm. Therefore, even when the light-emitting diode lamp 10 is used close to a plant, the uniformity of the R / B ratio can be maintained.
- a lighting device is not shown, but has a substrate on which wiring, through holes, etc. are formed, a plurality of light emitting diode lamps attached to the substrate surface, and a concave cross-sectional shape.
- a lighting device including at least a reflector or a shade configured to be attached with a light-emitting diode lamp.
- the illuminating device 40 includes the two or more light-emitting diode lamps 10 described above and a light guide plate 41 having a light extraction surface 41a.
- the irradiation area can be enlarged.
- the respective light emitting diode lamps 10 are arranged on the side surface 41b of the light guide plate 41 so as to be substantially equidistant.
- the light guide plate 41 can extract the light of the light emitting diode lamp 10 taken from the side surface 41b from the light extraction surface 41a.
- Each light emitting diode lamp 10 can be controlled independently.
- each light emitting diode lamp 10 When each light emitting diode lamp 10 is turned on, light incident on the side surface 41b of the light guide plate 41 is irradiated from the light extraction surface 41a.
- the illuminating device 40 of this embodiment since the light emitting diode lamps 10 are arranged at substantially equal intervals, the illuminance within the light extraction surface 41a can be made substantially uniform. Further, since each light emitting diode lamp 10 has the red and blue LEDs simultaneously mounted in the package as described above, the uniformity of the R / B ratio is good. Therefore, according to the illumination device 40 of the present embodiment, the uniformity of the R / B ratio can be maintained over the entire light extraction surface 41a of the light guide plate 41.
- the R / B ratio at the center position of the irradiation surface of the illumination device and an arbitrary distance from the center position It is possible to make comparative evaluation by measuring the R / B ratio at one or more positions.
- each light-emitting diode lamp is not a color mixture, so that there is a problem that the uniformity of the R / B ratio cannot be maintained over the entire light extraction surface 41a of the light guide plate 41. Specifically, as shown in FIG.
- a blue light emitting diode lamp 130 is disposed at a substantially central portion of the side surface 41b of the light guide plate 41, and a red light emitting diode lamp 12 is disposed above and below the side surface 41b. Therefore, when each of the light emitting diode lamps is turned on, the red photon flux R relative to the blue photon flux B is insufficient at the central portion in the vertical direction of the light extraction surface 41a. On the other hand, the red photon flux R with respect to the blue photon flux B becomes excessive in the upper part and the lower part of the light extraction surface 41a.
- the uniformity of R / B ratio can be maintained in the whole light extraction surface 41a of the light-guide plate 41 as mentioned above.
- the lighting number of the light emitting diode lamps 10 can be controlled according to the growth area of a plant.
- the photon flux of the light-emitting diode lamp 10 can be adjusted according to the distance between the lighting device 40 and the plant.
- the illuminating device 40 of this embodiment can also adjust the lighting time of the light emitting diode lamp 10 according to the growth state of a plant by making the electric current applied to the light emitting diode lamp 10 into a pulse drive.
- the lighting device 40 of the present embodiment according to the growth state of the plant, while controlling by combining one or more of the lighting number of the lighting device 40, the photon flux, the applied current, and the pulse driving time. Plants can be grown.
- the red light emitting diodes 20A and 20B having a peak emission wavelength of 655 nm to 675 nm, the blue light emitting diode 30A having a peak emission wavelength of 420 nm to 470 nm, are mounted in the same package.
- the lighting circuit can be simplified, it is possible to provide a light source for plant growth with high output, high efficiency, and low cost.
- the photon flux R of the red light emitting diode 20 (20A, 20B) and the photon flux B of the blue light emitting diode 30 at the same current are configured to satisfy the relationship of R> B. Irradiation can be performed uniformly while maintaining a suitable intensity ratio between red and blue.
- the plant-growing lighting device 40 of the present embodiment since the multi-color light-emitting diode lamp 10 for plant growth is used, the light of the optimum color mixture for growing a spot is emitted from each light-emitting diode 10. Can be supplied.
- the light emitting diodes 10 are arranged at substantially equal intervals and can be controlled independently, it is easy to design an illumination device that can supply light from multiple directions.
- the number of light-emitting diode lamps 10 can be adjusted according to the plant growth area, and the photon flux of the light-emitting diode lamp 10 can be adjusted according to the distance between the illuminating device and the plant. Therefore, low power consumption can be achieved.
- the lighting time of the light emitting diode lamp 10 can be controlled according to the growth state of the plant, so that the power consumption can be reduced. it can.
- the light guide plate 41 can be used as a light source for uniform light emission. Further, since the light emitting diode lamp 10 can emit multicolor light, the light emitting diode lamp 10 taken in from the side surface 41b of the light guide plate 41 and the lighting device 40 having an edge type backlight structure that takes out the light from the light extraction surface 41a; can do.
- the plant growing method of the present embodiment it is possible to control by combining the lighting number of the lighting device 40, the photon flux, the applied current, and the pulse driving time. Thereby, according to the growth state of a plant, blue and red light can be uniformly irradiated with the optimal balance.
- the light-emitting diode lamp 210 schematically includes five light-emitting diodes 220A, 220B, 220C, 220D, and 230A mounted on the surface of the mount substrate 211. It is configured.
- the three light-emitting diodes 20A, 20B, and 30A that are mounted are electrically independent, whereas the light-emitting diode lamp 210 of the present embodiment is shown in FIG.
- four red light emitting diodes 220A, 220B, 220C, 220D and one blue light emitting diode 230A are mounted so as to be electrically in series.
- a plurality of electrode terminals 212a to 212g are provided on the surface of the mount substrate 211.
- a red light emitting diode 220A is formed on the electrode terminal 212b
- a blue light emitting diode 230A is formed on the electrode terminal 212c
- a red light emitting diode 220B is formed on the electrode terminal 212d
- a red light emitting diode 220C is formed on the electrode terminal 212e.
- Red light emitting diodes 220D are mounted on the electrode terminals 212f, respectively.
- the electrode terminal 212 a is electrically connected to the positive electrode 213 provided on one end side of the mount substrate 211.
- the electrode terminal 212 g is electrically connected to the negative electrode 214 provided on the other end side of the mount substrate 211.
- the electrode terminal 212a and the p-type ohmic electrode (not shown) of the red light emitting diode 220A are connected by a gold wire 215a.
- the n-type ohmic electrode of the red light emitting diode 220A and the electrode terminal 212b are connected by a gold wire 215b.
- the electrode terminal 212b and the positive electrode (not shown) of the blue light emitting diode 230A are connected by a gold wire 215c.
- the negative electrode of the blue light emitting diode 230A and the electrode terminal 212c are connected by a gold wire 215d.
- the electrode terminal 212c and the p-type ohmic electrode (not shown) of the red light emitting diode 220B are connected by a gold wire 215e.
- the n-type ohmic electrode of the red light emitting diode 220B and the electrode terminal 212d are connected by a gold wire 215f.
- the electrode terminal 212d and the p-type ohmic electrode (not shown) of the red light emitting diode 220C are connected by a gold wire 215g.
- the n-type ohmic electrode of the red light emitting diode 220C and the electrode terminal 212e are connected by a gold wire 215h.
- the electrode terminal 212e and the electrode terminal 212f are connected by a gold wire 215i.
- the electrode terminal 212f and the p-type ohmic electrode (not shown) of the red light emitting diode 220D are connected by a gold wire j.
- the n-type ohmic electrode of the red light emitting diode 220D and the electrode terminal 212g are connected by a gold wire 215k.
- the light-emitting diode lamp 210 of the present embodiment by applying a forward voltage between the positive electrode 213 and the negative electrode 214, the four red light-emitting diodes 220A mounted in series are electrically connected. , 220B, 220C, 220D and one blue light emitting diode 230A can all be turned on. On the other hand, when a reverse voltage is applied between the positive electrode 213 and the negative electrode 214, the light emitting diode lamp 210 does not light up.
- the light-emitting diode lamps 10 and 210 of the first and second embodiments have different configurations.
- symbol is attached
- the light-emitting diode lamp 310 of this embodiment has five light-emitting diodes 320A, 320B, 320C, 330A, and 330B mounted on the surface of the mount substrate 311. It is configured.
- the light-emitting diode lamps 10 and 210 of the first and second embodiments are driven by a DC power supply, whereas the light-emitting diode lamp 310 of the present embodiment is shown in FIGS. 6 (a) and 6 (c). As shown, it can be driven by an AC power source.
- a plurality of electrode terminals 312a to 312g are provided on the surface of the mount substrate 311.
- a blue light emitting diode 330A is formed on the electrode terminal 312b
- a red light emitting diode 320B is formed on the electrode terminal 312c
- a red light emitting diode 320A is formed on the electrode terminal 312d
- a red light emitting diode 320C is formed on the electrode end 312e.
- Blue light emitting diodes 330B are mounted on the electrode terminals 212f, respectively.
- the electrode terminal 312 a is electrically connected to an electrode 313 provided on one end side of the mount substrate 311.
- the electrode terminal 312 g is electrically connected to an electrode 314 provided on the other end side of the mount substrate 311.
- the electrode terminal 312a and the p-type ohmic electrode (not shown) of the red light emitting diode 320A are connected by a gold wire 315a.
- the n-type ohmic electrode of the red light emitting diode 320A and the electrode terminal 312d are connected by a gold wire 315b.
- the electrode terminal 312d and the p-type ohmic electrode of the red light emitting diode 320B are connected by a gold wire 315c.
- the n-type ohmic electrode of the red light emitting diode 320B and the electrode terminal 312c are connected by a gold wire 315d.
- the electrode terminal 312c and the p-type ohmic electrode of the red light emitting diode 320C are connected by a gold wire 315e.
- the n-type ohmic electrode of the red light emitting diode 320C and the electrode terminal 312g are connected by a gold wire 315f.
- the electrode terminal 312g and the positive electrode (not shown) of the blue light emitting diode 330B are connected by a gold wire 315g.
- the negative electrode of the blue light emitting diode 330B and the electrode terminal 312f are connected by a gold wire 315h.
- the electrode terminal 312f and the positive electrode of the blue light emitting diode 330A are connected by a gold wire 315i.
- the negative electrode of the blue light emitting diode 330A and the electrode terminal 312a are connected by a gold wire j.
- the three red light emitting diodes 320A, 320B, and 320C are electrically connected in series, and a positive voltage is applied to the electrode 313 and a negative voltage is applied to the electrode 314. Lights up.
- two blue light emitting diodes 330A and 330B are electrically connected in series, and a positive voltage is applied to the electrode 314 and a negative voltage is applied to the electrode 313, that is, red light emission. Lights up when a current flows in the opposite direction as the diode lights up.
- the light emitting diode is normally driven by a direct current power supply, it consumes less power than other light sources.
- conversion loss from alternating current to direct current can be reduced.
- the chemical reaction by light takes time, and therefore, when irradiating light, pulse irradiation has better reaction efficiency than continuous irradiation. For this reason, the drive by the alternating current power source whose light intensity changes in a short time has a great effect of energy saving.
- the conventional mixed color light source (for example, the mixed color light source 110 shown in FIG. 10) has a problem that the circuit and wiring become complicated.
- the red light-emitting diode 320 and the blue light-emitting diode 330 are made into the same package and can be easily adapted to AC driving by wiring in opposite directions.
- the light emitting diode lamp 310 of the third embodiment has a different configuration.
- symbol is attached
- the light-emitting diode lamp 410 of the present embodiment is schematically configured by mounting four light-emitting diodes 420A, 420B, 420C, and 430A on the surface of the mount substrate 411. ing.
- red and blue light emitting diodes are respectively connected in series and driven by an AC power supply
- the light emitting diode lamp 410 of the present embodiment has a configuration illustrated in FIG. )
- All the red light emitting diodes are connected in parallel and can be driven by an AC power source. If 4 terminals are connected to another circuit, blue and red can be controlled independently.
- the surface of the mount substrate 411 is provided with four electrode terminals 412a to 412d.
- a light emitting diode is mounted on each electrode terminal. That is, a red light emitting diode 420A on the electrode terminal 412a, a blue light emitting diode 420A on the electrode terminal 412b, a red light emitting diode 420B on the electrode terminal 412c, and a red light emitting diode 420C on the electrode end 412d, Each is mounted.
- an electrode 413A and an electrode 413B are provided on one end side of the mount substrate 411.
- An electrode terminal 412a is electrically connected to the electrode 413A, and an electrode terminal 412b is electrically connected to the electrode 413B. Furthermore, electrodes 414A and 414B are provided on the other end side of the mount substrate 411. An electrode terminal 414c is electrically connected to the electrode 414A, and an electrode terminal 414d is electrically connected to the electrode 414B.
- the electrode terminal 412c and the p-type ohmic electrode (not shown) of the red light emitting diode 420A are connected by a gold wire 415a.
- the n-type ohmic electrode of the red light emitting diode 420A and the electrode terminal 412a are connected by a gold wire 415b.
- the electrode terminal 412c and the p-type ohmic electrode of the red light emitting diode 420B are connected by a gold wire 415c.
- the n-type ohmic electrode of the red light emitting diode 420B and the electrode terminal 412a are connected by a gold wire 415d.
- the electrode terminal 412c and the p-type ohmic electrode of the red light emitting diode 420C are connected by a gold wire 415e.
- the n-type ohmic electrode of the red light emitting diode 420C and the electrode terminal 412a are connected by a gold wire 415f.
- the electrode terminal 412b and the positive electrode (not shown) of the blue light emitting diode 430A are connected by a gold wire 315g.
- the negative electrode of the blue light emitting diode 430A and the electrode terminal 412d are connected by a gold wire 415h.
- the four light emitting diodes 420A, 420B, 420C, and 430A are electrically connected in parallel. Therefore, in the light emitting diode lamp 410, only the blue light emitting diode 430A is lit when a positive voltage is applied to the electrode 413A and the electrode 413B. In contrast, when a positive voltage is applied to the electrode 414A and the electrode 414B, only the red light emitting diodes 420A, 420B, and 420C are lit.
- the light-emitting diode lamp 410 of the present embodiment it is possible to save energy by AC driving and pulse driving as in the light-emitting diode lamp 310 of the third embodiment, and each light-emitting diode is connected independently. High brightness can be achieved.
- the light emitting diode lamp of the first to fourth embodiments has a different configuration.
- symbol is attached
- the light-emitting diode lamp 510 of this embodiment is schematically configured by mounting three light-emitting diodes 520A, 520B, and 530A on the surface of a mount substrate 511.
- the pair of electrodes are provided so as to face each other through the mount substrate, whereas the light emitting diode lamp 510 of the present embodiment has As shown in FIG. 8, a pair of electrodes 513 and 514 are provided side by side on one end side of the mount substrate 511.
- the surface of the mount substrate 511 is provided with four electrode terminals 512a to 512d.
- a red light emitting diode 520A is mounted on the electrode terminal 512b
- a blue light emitting diode 530A is mounted on the electrode terminal 512c
- a red light emitting diode 520B is mounted on the electrode terminal 512d.
- a positive electrode 513 and a negative electrode 514 are provided on one end side of the mount substrate 511.
- An electrode terminal 512a is electrically connected to the positive electrode 513
- an electrode terminal 512d is electrically connected to the negative electrode 514.
- the electrode terminal 512a and the p-type ohmic electrode (not shown) of the red light emitting diode 520A are connected by a gold wire 515a.
- the n-type ohmic electrode of the red light emitting diode 520A and the electrode terminal 512b are connected by a gold wire 515b.
- the electrode terminal 512b and the positive electrode of the blue light emitting diode 530A are connected by a gold wire 515c.
- the negative electrode of the blue light emitting diode 530A and the electrode terminal 512c are connected by a gold wire 515d.
- the electrode terminal 512c and the p-type ohmic electrode of the red light emitting diode 520B are connected by a gold wire 515e.
- the n-type ohmic electrode of the red light emitting diode 520B and the electrode terminal 512d are connected by a gold wire 515f.
- the three light emitting diodes 520A, 520B, and 530A are electrically connected in series. Therefore, in the light emitting diode lamp 510, when a positive voltage is applied to the positive electrode 513, all the light emitting diodes 520A, 520B, and 530A are turned on.
- the pair of electrodes 513 and 514 are provided side by side on one end side of the mount substrate 511.
- Such a side view type (edge type) backlight can be suitably used.
- the light emitting diode lamp of the fifth embodiment has a different configuration. For this reason, about the structure of the light emitting diode lamp of this embodiment, the same code
- the light-emitting diode lamp 610 of the present embodiment is schematically configured by mounting three light-emitting diodes 620A, 620B, and 630A on the surface of a mount substrate 611.
- the three light-emitting diodes 520A, 520B, and 530A are electrically connected in series
- the light-emitting diode lamp 610 of the present embodiment is shown in FIG.
- the three light emitting diodes 620A, 620B, and 630A are electrically connected independently (in parallel).
- the surface of the mount substrate 611 is provided with four electrode terminals 612a to 612d.
- a red light emitting diode 620A is mounted on the electrode terminal 612a
- a blue light emitting diode 620A is mounted on the electrode terminal 612b
- a red light emitting diode 620B is mounted on the electrode terminal 612c.
- three positive electrodes 613A to 613C and a negative electrode 614 are provided on one end side of the mount substrate 611.
- the electrode terminal 612a is electrically connected to the positive electrode 613A
- the electrode terminal 612b is electrically connected to the positive electrode 613B
- the electrode terminal 612c is electrically connected to the positive electrode 613C
- the electrode terminal 612d is electrically connected to the negative electrode 614.
- the electrode terminal 612a and the p-type ohmic electrode (not shown) of the red light emitting diode 620A are connected by a gold wire 615a.
- the n-type ohmic electrode of the red light emitting diode 620A and the electrode terminal 612d are connected by a gold wire 615b.
- the electrode terminal 612b and the positive electrode of the blue light emitting diode 630A are connected by a gold wire 615c.
- the negative electrode of the blue light emitting diode 630A and the electrode terminal 612d are connected by a gold wire 615d.
- the electrode terminal 612c and the p-type ohmic electrode of the red light emitting diode 620B are connected by a gold wire 615e.
- the n-type ohmic electrode of the red light emitting diode 620B and the electrode terminal 612d are connected by a gold wire 615f.
- the three light emitting diodes 620A, 620B, and 630A are electrically connected independently (in parallel). Accordingly, in the light emitting diode lamp 610, when a positive voltage is applied to the positive electrodes 613A to 613C, all the light emitting diodes 620A, 620B, and 630A are turned on.
- the electrodes 613A to 613C and the electrode 614 are provided side by side at one end of the mount substrate 611. Therefore, the side view is similar to the light-emitting diode lamp 510 of the fifth embodiment. It can be suitably used for a type (edge type) backlight. Moreover, since each light emitting diode 620A, 620B, 630A is connected independently (in parallel), the luminance of each light emitting diode 620A, 620B, 630A can be increased.
- the multicolor light emitting diode lamp and the plant growing lighting device according to the present invention are manufactured.
- the light emitting diodes manufactured in this example are a red light emitting diode having an AlGaInP light emitting part and a blue light emitting diode having a GaN light emitting part.
- Example 1 A light-emitting diode lamp shown in FIG. 1 was manufactured using the light-emitting diode chip of the embodiment, and optical characteristics such as photon flux [ ⁇ mol ⁇ s ⁇ 1] were evaluated.
- FIG. 1 is a diagram illustrating an example of a configuration of a light emitting device package. Two red light emitting diode chips shown in FIG. 2 (20A, 20B) and one blue (30A) light emitting diode shown in FIG. 3 are mounted.
- the package 10 has a size of about 3.5 mm ⁇ 2.8 mm and a thickness of 1.8 mm.
- the red light-emitting diode chip has an AlGaInP light-emitting layer with a GaP substrate attached, and has a peak wavelength of 660 nm.
- the blue light emitting diode chip is an InGaN light emitting layer grown on a sapphire substrate and emits light at a wavelength of 450 nm.
- the package 10 includes three chips 20A, 20B, and 30A mounted on a mounting portion (metal) in a resin container having a recess formed in a flat opening. *
- each light emitting diode can be lighted independently.
- the lead terminal is connected to the mounting portion.
- the container portion is formed by injection molding a thermoplastic resin (referred to as a white resin in the following description) containing a white pigment having a high reflectance.
- a material with sufficient heat resistance is selected for the white resin so that it can cope with a process requiring high temperature such as solder reflow.
- PPA polyphthalamide
- the light emitted from the light emitting diode chip is condensed at a half-value angle of 30 degrees by the wall surface rising from the recess provided in the resin container.
- the semiconductor light emitting element chips 20A, 20B, and 30A are bonded and fixed to the mounting portion with a die bond agent made of silicone resin. At this time, the chip interval is about 0.5 mm.
- the light emitting element package 10 as shown in FIG. 1A, each electrode of the light emitting diode chip and each terminal portion are connected by bonding wires 15.
- the mounting portion is a metal plate having a thickness of about 0.4 mm and is based on a metal such as a copper alloy, and the surface thereof is silver-plated to increase the reflectance. That is, the mounting portion is made of a metal excellent in thermal conductivity and reflection.
- the package was sealed with a transparent silicone resin so as to fill the recess, and a plant growing lamp was produced.
- the photon flux was measured by collecting the light extracted from the lamp when 20 mA was applied to each of the three chips.
- the ratio of R (red) to B (blue) was about 2.7.
- Example 2 The difference from Example 1 was that a side-view type light-emitting diode lamp shown in FIG. 8 was fabricated using a vertical conduction type light-emitting diode chip, and the photon flux [ ⁇ mol ⁇ s ⁇ 1] was evaluated.
- the red light emitting diode chip is a known substrate-attached reflection structure.
- the blue light-emitting diode chip an element having a structure having a 450 nm InGaN light-emitting layer epitaxially grown on a known n-type SiC substrate was used.
- This chip has a structure in which current is applied in the vertical direction having electrodes on the upper surface and the back surface (SiC substrate).
- the material of the package and the metal material of the mounting part are the same as in Example 1, but the shape is as shown in FIG. 8, and three chips are mounted in series.
- the size of the package is 3 mm ⁇ 1.4 mm, and the thickness is 0.8 mm.
- the light emitting element chip was fixed to the mounting portion with a die bond agent made of silver paste as a conductive adhesive, and the back electrode and the mounting portion were electrically connected. At this time, the chip interval is about 0.4 mm.
- red and blue chips are arranged as shown in FIG.
- the surface electrode of the light emitting diode chip and each terminal portion are connected by a bonding wire 515. Since the red surface electrode is n-type and the blue surface electrode is p-type, in consideration of polarity, three chips were wired in series.
- the mounting portion is a metal plate having a thickness of about 0.4 mm, is based on a metal such as a copper alloy, and the surface thereof is silver-plated to increase the reflectance. That is, the mounting portion is made of a metal excellent in thermal conductivity and reflection.
- the package was sealed with a transparent silicone resin so as to fill the recess, and a plant growing lamp was produced.
- the photon flux was measured by collecting the light extracted from the lamp when 20 mA was applied to each of the three chips.
- the ratio of R (red) to B (blue) was about 2.1.
- Example 3 Using a light-emitting diode lamp (half-value angle of 30 degrees) shown in FIG. 1, a small lighting panel for plant growth was produced, and the optical properties of photon flux [ ⁇ mol ⁇ s ⁇ 1 ] and color mixture uniformity were evaluated.
- the lighting panel was fixed by soldering a lamp in which two red LEDs and one blue LED were mounted in the same package at the same position as the lamp shown in FIG.
- the panel size was 12 cm square, the lamp spacing was 4 cm, and nine corner lamps were placed 2 cm from the edge of the panel.
- 20 mA was applied to the three LEDs of the lamp, and the optical characteristics at the position 20 cm below the panel on which the plants were grown, that is, the photon flux density and the color mixing uniformity were evaluated.
- the photon flux was measured by collecting the light extracted from one lamp when 20 mA was passed through each LED.
- the red photon flux was 0.177 [ ⁇ mol ⁇ s ⁇ 1 ] and the blue photon flux was 0.065 [ ⁇ mol ⁇ s ⁇ 1 ].
- the ratio of R and B was about 2.7. When one LED was used, the ratio of R and B was about 1.35.
- the uniformity of the color mixture of the lighting panel is two points: a panel center C (0, 0) on a surface 20 cm away from the panel, and a position A (3, 3) 3 cm from the center and 3 cm in the Y direction. The photon flux densities were compared. The results are shown in Table 1. At this time, the input power was 1.26 W.
- Example 4 Using the light-emitting diode lamp (half-value angle 30 degrees) shown in FIG. 8, an edge-type small lighting panel for plant growth was produced, and the optical characteristics of photon flux [ ⁇ mol ⁇ s ⁇ 1 ] and color mixing uniformity were obtained. evaluated.
- the lighting panel was fixed by soldering a lamp in which two red LEDs and one blue LED were mounted in the same package at the same position as the lamp shown in FIG.
- the photon flux was measured by collecting the light extracted from one lamp when 20 mA was applied to each LED.
- the red photon flux was 0.195 [ ⁇ mol ⁇ s ⁇ 1 ] and the blue photon flux was 0.072 [ ⁇ mol ⁇ s ⁇ 1 ].
- the ratio of R and B was about 2.7. When one LED was used, the ratio of R and B was about 1.35.
- the size of the panel was a square of 12 cm, the distance between the lamps was 2 cm, and five pieces were arranged at a position 2 cm from the edge of the panel. Considering the number of lamps mounted, 36 mA was passed through each LED, and the optical characteristics at a position 20 cm below the panel on which the plants were grown were evaluated. The results are shown in Table 1. At this time, the input power was 1.37 W.
- Example 1 A blue 5 ⁇ bullet-type lamp (half-value angle: 30 degrees) was arranged at the center of the panel, and eight red lamps with a half-value angle of 15 degrees were arranged around the blue lamp.
- the red LED is a conventional LED of an AlGaAs light emitting layer.
- the size of the panel was a 6 cm square, the distance between the lamps was 2 cm, and a corner lamp was placed 1 cm from the edge of the panel.
- Four 6 cm square panels were joined together to produce a 12 cm small lighting panel.
- 40 mA was passed through each of the four blue LEDs and the 32 red LEDs, and the optical characteristics at a position 20 cm below the panel to be plant-grown were evaluated. The results are shown in Table 1. At this time, the input power was 3.35 W.
- the illumination panel of Example 3 and Example 4 compared the illumination panel of Comparative Example 1 with respect to the center position C of the illumination area of the illumination panel and the point A away from this center position. As a result, it was confirmed that the red / blue ratio (R / B ratio) of the photon flux density was uniform.
- the lighting panel of Comparative Example 1 has an R / B ratio of 3.6 at the center position of the irradiation area, whereas the R / B ratio at point A away from the center position is 2. 6. It was confirmed that the uniformity of the color mixture in the irradiation surface of the lighting panel was low. On the other hand, in the illumination panels of Example 3 and Example 4, the R / B ratio at the center position of the irradiation area and the R / B ratio at point A far from the center position have the same value, and color mixing It was confirmed that the uniformity was high. Further, it was proved that the present invention is energy-saving lighting with a smaller input power than the comparative example.
- the light-emitting diode lamp and lighting device of the present invention can be used particularly as a light source for plant cultivation.
- DESCRIPTION OF SYMBOLS 10 Light emitting diode lamp (multicolor light emitting diode lamp for plant cultivation) 11 ... Mount substrate 12 ... n electrode terminal 13 ... p electrode terminal 14 ... reflective wall 15 ... gold wire 16 ... Sealing material 20 ... Red light emitting diode (first light emitting diode) 21 ... Compound semiconductor layer 22 ... Functional substrate 23 ... n-type ohmic electrode 24 ... p-type ohmic Electrode 25 ... Light emitting portion 25A ... Lower clad layer 25B ... Light emitting layer 25C ... Upper clad layer 26 ... Current diffusion layer 27 ... Connection layer 30 ... Blue light emitting diode (second light emitting diode) 31 ...
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Abstract
Description
本願は、2009年8月7日に、日本に出願された特願2009-184569号に基づき優先権を主張し、その内容をここに援用する。
植物育成用途の光源の光強度は、光量子の数、すなわち光量子束(μmol/s)で評価される。また、照明装置の性能にあたる照射される面の光強度は、照射面の単位面積当たりに入射する光量子束である光量子束密度(μmol/s・m2)で評価される。
[1] ピーク発光波長が655nm以上675nm以下の組成式(AlXGa1-X)YIn1-YP(0≦X≦0.1,0<Y≦1)から成る発光層を含むpn接合型の発光部を有する第1の発光ダイオードと、ピーク発光波長が420nm以上470nm以下の組成式GaXIn1-XN(0≦X≦1)の発光層を有する第2の発光ダイオードと、を備え、1以上の前記第1の発光ダイオードと、1以上の前記第2の発光ダイオードと、が同一のパッケージ内に搭載される植物育成用の多色発光ダイオードランプであって、
同一電流で、前記植物育成用の多色発光ダイオードランプに搭載された前記1以上の第1の発光ダイオードの光量子束R[μmol・s-1]と前記1以上の第2発光ダイオードの光量子束B[μmol・s-1]とが、R>Bの関係を満たすことを特徴とする植物育成用の多色発光ダイオードランプ。
[2] 前記第1の発光ダイオードの搭載個数が、前記第2の発光ダイオードの搭載個数より多いことを特徴とする前項1に記載の植物育成用の多色発光ダイオードランプ。
[3] 隣接する前記第1の発光ダイオードと前記第2の発光ダイオードとの距離が、10mm以内であることを特徴とする前項1又は2に記載の植物育成用の多色発光ダイオードランプ。
[5] 植物の生育面積に応じて前記植物育成用の多色発光ダイオードランプの点灯個数が制御可能とされていることを特徴とする前項4に記載の植物育成用照明装置。
[6] 前記植物育成用の多色発光ダイオードランプと植物との距離に応じて、前記植物育成用の多色発光ダイオードランプの光量子束を調整可能とされていることを特徴とする前項4又は5に記載の植物育成用照明装置。
[7] 前記植物育成用の多色発光ダイオードランプに印加する電流がパルス駆動であり、植物の生育状態に応じて前記植物育成用の多色発光ダイオードランプの点灯時間を調整可能とされていることを特徴とする前項4乃至6のいずれか一項に記載の植物育成用照明装置。
[8] 光取り出し面を有する導光板を備え、前記導光板の側面から取り入れた前記植物育成用の多色発光ダイオードランプの光を、前記光取り出し面から取り出し可能とされていることを特徴とする前項4乃至7のいずれか一項に記載の植物育成用照明装置。
本発明を適用した一実施形態である植物育成用の多色発光ダイオードランプ(以下、単に「発光ダイオードランプ」と記す)の構成について説明する。
図1(a)及び図1(b)に示すように、本実施形態の発光ダイオードランプ10は、マウント基板11の表面に3つの発光ダイオード20A,20B,30Aがそれぞれ独立して搭載されて概略構成されている。より具体的には、発光ダイオード20A,20B(第1の発光ダイオード)は、ピーク発光波長が655nm以上675nm以下の赤色発光ダイオードであり、発光ダイオード30A(第2の発光ダイオード)は、ピーク発光波長が420nm以上470nm以下の青色発光ダイオードである。
ここで、本実施形態に用いる第1の発光ダイオードである赤色発光ダイオード20A,20Bの構成について説明する。図2(a)及び図2(b)は、本実施形態に用いる赤色発光ダイオード20(20A,20B)を説明するための図であり、図2(a)は平面図、図2(b)は図2(a)中に示すB-B’線に沿った断面図である。
図2(a)及び図2(b)に示すように、赤色発光ダイオード20は、化合物半導体層21と機能性基板22とが接合された発光ダイオードである。そして、赤色発光ダイオード20は、主たる光取り出し面に設けられたn型オーミック電極23及びp型オーミック電極24を備えて概略構成されている。なお、本実施形態における主たる光取り出し面とは、化合物半導体層21において、機能性基板22を貼り付けた面の反対側の面である。
一方、接合面に反射率の高い表面を有する機能性基板も選択できる。例えば、表面に銀、金、銅、アルミニウムなどである金属基板または合金基板や、半導体に金属ミラー構造を形成した複合基板なども選択できる。接合による歪の影響がない歪調整層と同じ材質から選択することが、最も望ましい。
また、垂直面22aの幅(厚さ方向)を、30μm~100μmの範囲内とすることが好ましい。垂直面22aの幅を上記範囲内にすることで、機能性基板22の底部で反射された光を垂直面22aにおいて効率よく発光面に戻すことができ、さらには、主たる光取り出し面から放出させることが可能となる。このため、赤色発光ダイオード20の発光効率を高めることができる。
次に、本実施形態に用いる第2の発光ダイオードである青色発光ダイオード30Aの構成について説明する。図3(a)及び図3(b)は、本実施形態に用いる青色発光ダイオード30(30A)を説明するための図であり、図3(a)は平面図、図3(b)は図3(a)中に示すB-B’線に沿った断面図である。
図3(a)及び図3(b)に示すように、青色発光ダイオード30は、基板31上に、n型半導体層32、発光層33及びp型半導体層34が順次積層されてなる半導体層35が形成され、p型半導体層34上に、図示略の透明導電膜が形成され、概略構成されている。また、基板31上には、図示略のバッファ層及び下地層が順次形成されており、下地層上に半導体層35を構成するn型半導体層32が積層されている。また、透明導電膜上には正極36が設けられるとともに、半導体層35の一部が除去されて露出したn型半導体層32の露出領域に負極37が設けられている。
透明導電膜としては、例えば、ITO(In2O3-SnO2)、AZO(ZnO-Al2O3)、IZO(In2O3-ZnO)、GZO(ZnO-Ga2O3)から選ばれる少なくとも一種類を含んだ材料を、この技術分野でよく知られた慣用の手段で設けることができる。また、透明導電膜の構造も、従来公知の構造を含めて如何なる構造のものも何ら制限なく用いることができる。また、透明導電膜は、p型コンタクト層上のほぼ全面を覆うように形成しても構わないし、隙間を開けて格子状や樹形状に形成しても良い。また、透明導電膜を成膜した後に、合金化や透明化を目的とした熱処理を施しても良いし、施さなくても構わない。
次に、本実施形態の発光ダイオードランプ10の構成について説明する。
図1(a)及び図1(b)に示すように、本実施形態の発光ダイオードランプ10は、マウント基板11の表面に3つの発光ダイオード20A,20B,30Aがそれぞれ独立して搭載されて概略構成されている。また、マウント基板11の表面には、複数のn電極端子12及びp電極端子13が設けられており、赤色発光ダイオード20A,20Bは、マウント基板11のp電極端子13上に接続層27あるいは銀(Ag)ペーストで固定、支持(マウント)されている。そして、赤色発光ダイオード20A,20Bのn型オーミック電極23とマウント基板11のn電極端子12とが金線15を用いてそれぞれ接続されており(ワイヤボンディング)、p型オーミック電極24とマウント基板11のp電極端子13とが金線15を用いてそれぞれ接続されている。
なお、3つの発光ダイオード20A,20B,30Aがそれぞれ独立して搭載されるとは、すなわち、3つの発光ダイオード20A,20B,30Aが電気的に並列となるように搭載されることをいう。
先ず、図1(a)及び図1(b)に示すように、マウント基板11の表面に所定の数量の赤色発光ダイオード20(20A,20B)を実装する。赤色発光ダイオード20の実装は、先ず、マウント基板11と赤色発光ダイオード20との位置合せを行い、マウント基板11の表面の所定の位置に赤色発光ダイオード20を配置する。次に、赤色発光ダイオード20の底面に設けた接続層27により、マウント基板11の表面にダイボンドする。次に、赤色発光ダイオード20のn型オーミック電極23とマウント基板11のn電極端子12とを金線15を用いて接続する(ワイヤボンディング)。次に、赤色発光ダイオード20のp型オーミック電極24とマウント基板11のp電極端子13とを金線15を用いて接続する。
次に、マウント基板11の表面に所定の数量の青色発光ダイオード30(30A)を実装する。青色発光ダイオード30の実装は、先ず、マウント基板11と青色発光ダイオード30との位置合せを行い、マウント基板11の表面の所定の位置に青色発光ダイオード30を配置する。次に、青色発光ダイオード30の底面に設けた接続層38により、マウント基板11の表面にダイボンドする。次に、青色発光ダイオード30の負極37とマウント基板11のn電極端子12とを金線15を用いて接続する。次に、青色発光ダイオード30の正極36とマウント基板11のp電極端子13とを金線15を用いて接続する。
最後に、マウント基板11の発光ダイオード20A,20B,30Aが実装された表面を、封止材16によって封止する。このようにして、本実施形態の発光ダイオードランプ10を製造する。
また、光量子束密度[μmol・m-2・s-1]は、例えば、光源との距離を0.2m、光源からの方向を正面として、光量子計を用いて測定する。
なお、上記光量子束密度は、植物育成一般の光強度の指標として用いられるものである。蛍光灯などの白色光源において、150μmol/s・m2以上が望ましい。本発明のLED光源の場合は、植物の光合成の効率が悪い緑色を中心とした色成分を含まないため、少ない光量子で植物育成可能であり、100μmol/s・m2以上あれば、望ましい範囲と推定される。
次に、上記発光ダイオードランプ10を用いた照明装置の構成について説明する。
一般的に、照明装置とは、図示しないが、配線やスルーホール等が形成された基板と、基板表面に取り付けられた複数の発光ダイオードランプと、凹字状の断面形状を有し、凹部内側の底部に発光ダイオードランプが取り付けられるように構成されたリフレクター又はシェードとを少なくとも備えた照明装置をいう。
照明装置40は、2以上の上述した発光ダイオードランプ10と、光取り出し面41aを有する導光板41とを備えて、概略構成されている。ここで、導光板41を用いることにより、照射面積を拡大させることが可能となる。より具体的には、各発光ダイオードランプ10は、導光板41の側面41bに、略等間隔となるように配置されている。また、導光板41は、側面41bから取り入れた発光ダイオードランプ10の光を、光取り出し面41aから取り出し可能とされている。なお、各発光ダイオードランプ10は、独立に制御可能とされている。
また、本実施形態の照明装置40では、各発光ダイオードランプ10は、独立に制御可能とされているため、植物の生育面積に応じて発光ダイオードランプ10の点灯個数を制御することができる。さらに、照明装置40と植物との距離に応じて、発光ダイオードランプ10の光量子束を調整することもできる。さらにまた、本実施形態の照明装置40は、発光ダイオードランプ10に印加する電流をパルス駆動とすることにより、植物の生育状態に応じて発光ダイオードランプ10の点灯時間を調整することもできる。
次に、本発明を適用した第2の実施形態について説明する。本実施形態では、第1の実施形態の発光ダイオードランプ10と異なる構成となっている。このため、本実施形態の発光ダイオードランプの構成については、第1の実施形態である発光ダイオードランプ10と同一の構成部分については同じ符号を付すると共に説明を省略する。
ここで、第1実施形態の発光ダイオードランプ10では搭載された3つの発光ダイオード20A,20B,30Aが電気的に独立であるのに対して、本実施形態の発光ダイオードランプ210は、図5(a)及び図5(c)に示すように、4つの赤色発光ダイオード220A、220B,220C,220D及び1つの青色発光ダイオード230Aが電気的に直列となるように搭載されている。
電極端子212bと青色発光ダイオード230Aの正極電極(図示略)とが金線215cによって接続されている。青色発光ダイオード230Aの負極電極と電極端子212cとが金線215dによって接続されている。
電極端子212cと赤色発光ダイオード220Bのp型オーミック電極(図示略)とが金線215eによって接続されている。赤色発光ダイオード220Bのn型オーミック電極と電極端子212dとが金線215fによって接続されている。
電極端子212dと赤色発光ダイオード220Cのp型オーミック電極(図示略)とが金線215gによって接続されている。赤色発光ダイオード220Cのn型オーミック電極と電極端子212eとが金線215hによって接続されている。
電極端子212eと電極端子212fとが金線215iによって接続されている。
電極端子212fと赤色発光ダイオード220Dのp型オーミック電極(図示略)とが金線jによって接続されている。赤色発光ダイオード220Dのn型オーミック電極と電極端子212gとが金線215kによって接続されている。
次に、本発明を適用した第3の実施形態について説明する。本実施形態では、第1及び第2の実施形態の発光ダイオードランプ10,210とは異なる構成となっている。このため、本実施形態の発光ダイオードランプの構成については、第1及び第2の実施形態である発光ダイオードランプ10,210と同一の構成部分については同じ符号を付すると共に説明を省略する。
ここで、第1及び第2実施形態の発光ダイオードランプ10,210が直流電源によって駆動するのに対して、本実施形態の発光ダイオードランプ310は、図6(a)及び図6(c)に示すように、交流電源によって駆動可能とされている。
電極端子312dと赤色発光ダイオード320Bのp型オーミック電極とが金線315cによって接続されている。赤色発光ダイオード320Bのn型オーミック電極と電極端子312cとが金線315dによって接続されている。
電極端子312cと赤色発光ダイオード320Cのp型オーミック電極とが金線315eによって接続されている。赤色発光ダイオード320Cのn型オーミック電極と電極端子312gとが金線315fによって接続されている。
電極端子312fと青色発光ダイオード330Aの正極電極とが金線315iによって接続されている。青色発光ダイオード330Aの負極電極と電極端子312aとが金線jによって接続されている。
同時に、本実施形態の発光ダイオードランプ310は、2つの青色発光ダイオード330A,330Bが電気的に直列に接続されており、電極314に正電圧、電極313に負電圧をかけた場合、すなわち赤色発光ダイオードが点灯する際と逆向きの電流が流れる場合に点灯する。
これに対して本実施形態の発光ダイオードランプ310によれば、赤色発光ダイオード320と青色発光ダイオード330とを同一パッケージとし、それぞれ逆向きに配線することによって容易に交流駆動に対応させることができる。
次に、本発明を適用した第4の実施形態について説明する。本実施形態では、第3の実施形態の発光ダイオードランプ310とは異なる構成となっている。このため、本実施形態の発光ダイオードランプの構成については、第3の実施形態である発光ダイオードランプ310と同一の構成部分については同じ符号を付すると共に説明を省略する。
ここで、第3実施形態の発光ダイオードランプ310は、赤色及び青色発光ダイオードがそれぞれ直列に接続されて交流電源によって駆動するのに対して、本実施形態の発光ダイオードランプ410は、図7(a)に示すように、全ての赤色発光ダイオードが並列に接続されて交流電源によって駆動可能とされている。4端子を別回路に接続すれば、青色、赤色を独立に制御可能である。
電極端子412cと赤色発光ダイオード420Bのp型オーミック電極とが金線415cによって接続されている。赤色発光ダイオード420Bのn型オーミック電極と電極端子412aとが金線415dによって接続されている。
電極端子412cと赤色発光ダイオード420Cのp型オーミック電極とが金線415eによって接続されている。赤色発光ダイオード420Cのn型オーミック電極と電極端子412aとが金線415fによって接続されている。
次に、本発明を適用した第5の実施形態について説明する。本実施形態では、第1乃至第4の実施形態の発光ダイオードランプとは異なる構成となっている。このため、本実施形態の発光ダイオードランプの構成については、第1乃至第4の実施形態である発光ダイオードランプと同一の構成部分については同じ符号を付すると共に説明を省略する。
ここで、第2乃至第4の実施形態の発光ダイオードランプでは、一対の電極がマウント基板を介して対向配置となるように設けられているのに対して、本実施形態の発光ダイオードランプ510は、図8に示すように、一対の電極513,514がマウント基板511のいずれかの一端側に並べて設けられている。
電極端子512bと青色発光ダイオード530Aの正極電極とが金線515cによって接続されている。青色発光ダイオード530Aの負極電極と電極端子512cとが金線515dによって接続されている。
電極端子512cと赤色発光ダイオード520Bのp型オーミック電極とが金線515eによって接続されている。赤色発光ダイオード520Bのn型オーミック電極と電極端子512dとが金線515fによって接続されている。
次に、本発明を適用した第6の実施形態について説明する。本実施形態では、第5の実施形態の発光ダイオードランプとは異なる構成となっている。このため、本実施形態の発光ダイオードランプの構成については、第5の実施形態である発光ダイオードランプと同一の構成部分については同じ符号を付すると共に説明を省略する。
ここで、第5実施形態の発光ダイオードランプ510では、3つの発光ダイオード520A,520B,530Aが電気的に直列に接続されているのに対して、本実施形態の発光ダイオードランプ610は、図9に示すように、3つの発光ダイオード620A,620B,630Aが電気的に独立(並列)に接続されている
電極端子612bと青色発光ダイオード630Aの正極電極とが金線615cによって接続されている。青色発光ダイオード630Aの負極電極と電極端子612dとが金線615dによって接続されている。
電極端子612cと赤色発光ダイオード620Bのp型オーミック電極とが金線615eによって接続されている。赤色発光ダイオード620Bのn型オーミック電極と電極端子612dとが金線615fによって接続されている。
実施形態の発光ダイオードチップを用いて、図1に示した発光ダイオードランプを作製し、光量子束[μmol・s-1]等の光学特性を評価した。
図1は、発光素子パッケージの構成の一例を示した図である。図2に記載の赤色発光ダイオードチップを2個(20A、20B)、図3に記載の青色(30A)発光ダイオードを1個搭載している。パッケージ10のサイズは、約3.5mm×2.8mm、厚さ1.8mmである。赤色発光ダイオードチップは、GaP基板を貼り付けたAlGaInP発光層を有し、ピーク波長660nmである。青色発光ダイオードチップは、サファイア基板に成長したInGaN発光層で、波長450nmで発光する。
また、ハンダリフローなどの温度がかかる工程に対応できるよう、白色樹脂は、耐熱性が十分考慮された材質が選定されている。基材となる樹脂としてはPPA(polyphthalamide)を用いた。
そして、発光素子パッケージ10は、図1(a)に示すように、発光ダイオードチップの各電極と各端子部をボンディングワイヤ15により接続されている。
光量子束は、3個のチップに各20mA流したとき、本ランプから取り出される光を集め実測した。赤色(ピーク波長=660nm)の光量子束0.177[μmol・s-1]、青色(ピーク波長=450nm)の光量子束0.065[μmol・s-1]であった。R(赤)とB(青)の比は、約2.7であった。
実施例1と相違点は、上下通電タイプの発光ダイオードチップを用いて、図8に示したサイドビュー型の発光ダイオードランプを作製し、光量子束[μmol・s-1]を評価した。
赤色発光ダイオードチップは、公知の基板貼り付け型の反射構造である。660nmのAlGaInP発光層を含むエピ層に、銀合金の金属反射層を有するシリコン基板を貼り付けた構造のチップを使用した。このチップは、上面と裏面(シリコン基板)に電極を有する。(図略)
一方、青色発光ダイオードチップは、公知のn型のSiC基板にエピタキシャル成長した450nmのInGaN発光層を有する構造の素子を使用した。このチップは、上面と裏面(SiC基板)に電極を有する上下に通電する構造である。パッケージの材質、搭載部の金属材料は、実施例1と同じであるが、形状は、図8のような形状で、チップを直列に3個搭載する。パッケージのサイズは、3mm×1.4mmで、厚さは、0.8mmである。
発光素子チップは、搭載部に、導電性の接着剤である銀ペーストからなるダイボンド剤で固定され、裏面電極と、搭載部が電気的に接続された。このとき、チップ間隔は、約0.4mmである。
そして、発光素子パッケージ510は、図8に示すように、赤と青のチップを配置した。発光ダイオードチップの表面電極と各端子部をボンディングワイヤ515により接続されている。赤色の表面電極は、n型、青色の表面電極はp型であるので、極性を考慮し、3個のチップを直列に配線した。
光量子束は、3個のチップに各20mA流したとき、本ランプから取り出される光を集め実測した。赤色(ピーク波長=660nm)の光量子束0.13[μmol・s-1]、青色(ピーク波長=450nm)の光量子束0.062[μmol・s-1]であった。R(赤)とB(青)の比は、約2.1であった。
図1に示した発光ダイオードランプ(半値角30度)を用いて、植物育成用の小型照明パネルを作製し、光量子束[μmol・s-1]及び混色の均一性の光学特性を評価した。
パネルのサイズは12cmの正方形、ランプの間隔は4cmとし、パネルの端から2cmの位置にコーナーのランプを9個配置した。
そして、前記ランプの3個のLEDに20mAを流し、植物育成されるパネルの下方向20cmの位置における光学特性、すなわち、光量子束密度及び混色の均一性を評価した。
なお、光量子束は、各LEDに20mA流したとき、1個のランプから取り出される光を集め実測した。赤色の光量子束0.177[μmol・s-1]、青色の光量子束0.065[μmol・s-1]であった。RとBの比は、約2.7であった。LEDを各1個とした時で、RとBの比は、約1.35であった。
また、照明パネルの混色の均一性は、パネルから20cm離れた面におけるパネル中心C(0,0)と、中心からX方向3cm、Y方向3cmの位置A(3,3)と、の2点光量子束密度を比較した。結果を表1に示す。
この時、投入電力は、1.26Wであった。
図8に示した発光ダイオードランプ(半値角30度)を用いて、植物育成用のエッヂ型の小型照明パネルを作製し、光量子束[μmol・s-1]及び混色の均一性の光学特性を評価した。
光量子束は、各LEDに20mA流したとき、1個のランプから取り出される光を集め実測した。赤色の光量子束0.195[μmol・s-1]、青色の光量子束0.072[μmol・s-1]であった。RとBの比は、約2.7であった。LEDを各1個とした時で、RとBの比は、約1.35であった。
パネルのサイズは12cmの正方形で、ランプの間隔は2cmとし、パネルの端から2cmの位置に、5個配置した。
ランプの搭載個数を考慮して、各LEDに36mAを流し、植物育成されるパネルの下方20cmの位置における光学特性を評価した。結果を表1に示す。
この時、投入電力は、1.37Wであった。
パネル中心に青色の5φの砲弾型ランプ(半値角:30度)を配置し、青色ランプの周辺に半値角15度の赤色ランプを8個配置した。ここで、赤色LEDは、従来のAlGaAs発光層のLEDである。
パネルのサイズは6cmの正方形、ランプの間隔は2cmとし、パネルの端から1cmの位置にコーナーのランプを配置した。この6cm角のパネルを4枚つなぎ合わせて、12cmの小型照明パネルを作製した。
そして、青色LED4個、赤色LED32個の各LEDに40mAを流し、植物育成されるパネルの下方20cmの位置における光学特性を評価した。結果を表1に示す。
この時、投入電力は、3.35Wであった。
これに対して、実施例3及び実施例4の照明パネルでは、照射エリアの中心位置におけるR/B比と、中心位置から離れたA点におけるR/B比と、が同じ値であり、混色の均一性が高いことを確認した。
また、本発明は、比較例に対し、投入電力が小さく、省エネルギー照明であることが、実証された。
Claims (9)
- ピーク発光波長が655nm以上675nm以下の組成式(AlXGa1-X)YIn1-YP(0≦X≦0.1,0<Y≦1)から成る発光層を含むpn接合型の発光部を有する第1の発光ダイオードと、
ピーク発光波長が420nm以上470nm以下の組成式GaXIn1-XN(0≦X≦1)の発光層を有する第2の発光ダイオードと、を備え、
1以上の前記第1の発光ダイオードと、1以上の前記第2の発光ダイオードと、が同一のパッケージ内に搭載されることを特徴とする植物育成用の多色発光ダイオードランプであって、
同一電流で、前記多色発光ダイオードランプに搭載された前記1以上の第1の発光ダイオードの光量子束R[μmol・s-1]と前記1以上の第2発光ダイオードの光量子束B[μmol・s-1]とが、R>Bの関係を満たすことを特徴とする植物育成用の多色発光ダイオードランプ。 - 前記第1の発光ダイオードの搭載個数が、前記第2の発光ダイオードの搭載個数より多いことを特徴とする請求項1に記載の植物育成用の多色発光ダイオードランプ。
- 隣接する前記第1の発光ダイオードと前記第2の発光ダイオードとの距離が、10mm以内であることを特徴とする請求項1又は2に記載の植物育成用の多色発光ダイオードランプ。
- 請求項1乃至3のいずれか一項に記載の植物育成用の多色発光ダイオードランプを2以上備え、
前記植物育成用の多色発光ダイオードランプが略等間隔に配置されるとともに、独立に制御可能とされていることを特徴とする植物育成用照明装置。 - 植物の生育面積に応じて前記植物育成用の多色発光ダイオードランプの点灯個数が制御可能とされていることを特徴とする請求項4に記載の植物育成用照明装置。
- 前記発光ダイオードランプと植物との距離に応じて、前記植物育成用の多色発光ダイオードランプの光量子束を調整可能とされていることを特徴とする請求項4又は5に記載の植物育成用照明装置。
- 前記植物育成用の多色発光ダイオードランプに印加する電流がパルス駆動であり、
植物の生育状態に応じて前記植物育成用の多色発光ダイオードランプの点灯時間を調整可能とされていることを特徴とする請求項4乃至6のいずれか一項に記載の植物育成用照明装置。 - 光取り出し面を有する導光板を備え、
前記導光板の側面から取り入れた前記植物育成用の多色発光ダイオードランプの光を、前記光取り出し面から取り出し可能とされていることを特徴とする請求項4乃至7のいずれか一項に記載の植物育成用照明装置。 - 植物の生育状態に応じて、請求項4乃至8のいずれか一項に記載の植物育成用照明装置の点灯個数、光量子束、印加電流、パルス駆動時間の1以上を組み合わせて制御することを特徴とする植物育成方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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EP10806520.2A EP2462797B1 (en) | 2009-08-07 | 2010-08-05 | Multicolor LED lamp for use in plant cultivation, illumination appratus and plant cultivation method |
US13/388,796 US9485919B2 (en) | 2009-08-07 | 2010-08-05 | Multicolor light emitting diode lamp for plant growth, illumination apparatus, and plant growth method |
JP2011525931A JP5393790B2 (ja) | 2009-08-07 | 2010-08-05 | 植物育成用の多色発光ダイオードランプ、照明装置および植物育成方法 |
KR1020127005645A KR101422364B1 (ko) | 2009-08-07 | 2010-08-05 | 식물 육성용의 다색 발광 다이오드 램프, 조명 장치 및 식물 육성 방법 |
CN2010800444267A CN102686101B (zh) | 2009-08-07 | 2010-08-05 | 植物培养用的多色发光二极管灯、照明装置和植物培养方法 |
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CN102800664A (zh) * | 2012-08-07 | 2012-11-28 | 浙江古越龙山电子科技发展有限公司 | 一种用于促进植物生长的led单灯及其生产工艺 |
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JP2021534768A (ja) * | 2018-08-24 | 2021-12-16 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co., Ltd. | 植物栽培用光源 |
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US11968937B2 (en) | 2018-08-24 | 2024-04-30 | Seoul Viosys Co., Ltd. | Light source |
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Also Published As
Publication number | Publication date |
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TWI487139B (zh) | 2015-06-01 |
KR20120069676A (ko) | 2012-06-28 |
CN102686101B (zh) | 2013-12-18 |
EP2462797B1 (en) | 2019-02-27 |
US9485919B2 (en) | 2016-11-08 |
EP2462797A1 (en) | 2012-06-13 |
CN102686101A (zh) | 2012-09-19 |
TW201112442A (en) | 2011-04-01 |
US20120124903A1 (en) | 2012-05-24 |
JPWO2011016521A1 (ja) | 2013-01-17 |
EP2462797A4 (en) | 2015-05-27 |
KR101422364B1 (ko) | 2014-07-22 |
JP5393790B2 (ja) | 2014-01-22 |
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