TWI383518B - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
TWI383518B
TWI383518B TW097104337A TW97104337A TWI383518B TW I383518 B TWI383518 B TW I383518B TW 097104337 A TW097104337 A TW 097104337A TW 97104337 A TW97104337 A TW 97104337A TW I383518 B TWI383518 B TW I383518B
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
diode
light
emitting
Prior art date
Application number
TW097104337A
Other languages
English (en)
Other versions
TW200849667A (en
Inventor
Atsushi Matsumura
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200849667A publication Critical patent/TW200849667A/zh
Application granted granted Critical
Publication of TWI383518B publication Critical patent/TWI383518B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
TW097104337A 2007-02-05 2008-02-04 Light emitting diode TWI383518B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007025054A JP2008192790A (ja) 2007-02-05 2007-02-05 発光ダイオード

Publications (2)

Publication Number Publication Date
TW200849667A TW200849667A (en) 2008-12-16
TWI383518B true TWI383518B (en) 2013-01-21

Family

ID=39689943

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097104337A TWI383518B (en) 2007-02-05 2008-02-04 Light emitting diode

Country Status (4)

Country Link
US (1) US8164106B2 (zh)
JP (1) JP2008192790A (zh)
TW (1) TWI383518B (zh)
WO (1) WO2008099699A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5906001B2 (ja) * 2009-03-10 2016-04-20 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP2010239098A (ja) * 2009-03-10 2010-10-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP5220687B2 (ja) * 2009-06-15 2013-06-26 昭和電工株式会社 植物栽培用の照明装置および植物栽培システム
CN102686101B (zh) * 2009-08-07 2013-12-18 昭和电工株式会社 植物培养用的多色发光二极管灯、照明装置和植物培养方法
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
JP2012119585A (ja) * 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
JP6101303B2 (ja) * 2015-04-30 2017-03-22 昭和電工株式会社 発光ダイオード、発光ダイオードランプ及び照明装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047973A (ja) * 2002-05-17 2004-02-12 Shin Etsu Handotai Co Ltd 発光素子の製造方法
US20050116309A1 (en) * 2003-10-30 2005-06-02 Shouichi Ohyama Semiconductor light-emitting element, manufacturing method therefor and semiconductor device
JP2006253180A (ja) * 2005-03-08 2006-09-21 Sony Corp 半導体発光素子
JP2007019124A (ja) * 2005-07-06 2007-01-25 Showa Denko Kk 化合物半導体発光ダイオードおよびその製造方法
JP2007019262A (ja) * 2005-07-07 2007-01-25 Toshiba Discrete Technology Kk 半導体発光素子及び半導体発光素子の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153889A (en) 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JPH0371679A (ja) * 1989-08-11 1991-03-27 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
JP3406907B2 (ja) * 1990-08-20 2003-05-19 株式会社東芝 半導体発光ダイオード
JP3373561B2 (ja) 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
JP3732626B2 (ja) 1997-08-26 2006-01-05 株式会社東芝 半導体発光素子
JP3698402B2 (ja) * 1998-11-30 2005-09-21 シャープ株式会社 発光ダイオード
US6777257B2 (en) 2002-05-17 2004-08-17 Shin-Etsu Handotai Co., Ltd. Method of fabricating a light emitting device and light emitting device
JP5186093B2 (ja) * 2006-09-26 2013-04-17 スタンレー電気株式会社 半導体発光デバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047973A (ja) * 2002-05-17 2004-02-12 Shin Etsu Handotai Co Ltd 発光素子の製造方法
US20050116309A1 (en) * 2003-10-30 2005-06-02 Shouichi Ohyama Semiconductor light-emitting element, manufacturing method therefor and semiconductor device
JP2006253180A (ja) * 2005-03-08 2006-09-21 Sony Corp 半導体発光素子
JP2007019124A (ja) * 2005-07-06 2007-01-25 Showa Denko Kk 化合物半導体発光ダイオードおよびその製造方法
JP2007019262A (ja) * 2005-07-07 2007-01-25 Toshiba Discrete Technology Kk 半導体発光素子及び半導体発光素子の製造方法

Also Published As

Publication number Publication date
US8164106B2 (en) 2012-04-24
US20100006818A1 (en) 2010-01-14
WO2008099699A1 (ja) 2008-08-21
JP2008192790A (ja) 2008-08-21
TW200849667A (en) 2008-12-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees