TWI491064B - Iii族氮化物半導體發光元件及該製造方法、以及燈 - Google Patents

Iii族氮化物半導體發光元件及該製造方法、以及燈 Download PDF

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TWI491064B
TWI491064B TW097124942A TW97124942A TWI491064B TW I491064 B TWI491064 B TW I491064B TW 097124942 A TW097124942 A TW 097124942A TW 97124942 A TW97124942 A TW 97124942A TW I491064 B TWI491064 B TW I491064B
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layer
group iii
intermediate layer
iii nitride
substrate
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TW097124942A
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Chinese (zh)
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TW200917529A (en
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加治亘章
三木久幸
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豐田合成股份有限公司
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Power Engineering (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
TW097124942A 2007-07-04 2008-07-02 Iii族氮化物半導體發光元件及該製造方法、以及燈 TWI491064B (zh)

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Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

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TW200917529A TW200917529A (en) 2009-04-16
TWI491064B true TWI491064B (zh) 2015-07-01

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US (1) US8674398B2 (enExample)
JP (1) JP4714712B2 (enExample)
KR (1) KR101042417B1 (enExample)
CN (1) CN101689592B (enExample)
TW (1) TWI491064B (enExample)
WO (1) WO2009005126A1 (enExample)

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JP5564331B2 (ja) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
KR101484658B1 (ko) * 2010-04-30 2015-01-21 캐논 아네르바 가부시키가이샤 에피텍셜 박막형성방법, 진공처리장치, 반도체 발광소자 제조방법, 반도체 발광소자, 및 조명장치
JP2012243780A (ja) * 2011-05-13 2012-12-10 Toshiba Corp 半導体発光素子及びウェーハ
WO2014008162A1 (en) 2012-07-02 2014-01-09 Applied Materials, Inc. Aluminum-nitride buffer and active layers by physical vapor deposition
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP2014241417A (ja) * 2014-07-15 2014-12-25 シャープ株式会社 アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法
TWI553901B (zh) * 2015-09-07 2016-10-11 環球晶圓股份有限公司 紫外光發光二極體及其製造方法
WO2017094028A1 (en) * 2015-12-02 2017-06-08 Indian Institute Of Technology Bombay Method and apparatus for forming silicon doped gallium nitride (gan) films by a co-sputtering technique
JP7055595B2 (ja) * 2017-03-29 2022-04-18 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
JP7112190B2 (ja) * 2017-09-29 2022-08-03 日機装株式会社 発光装置
FI129628B (en) * 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
CN114910828B (zh) * 2022-05-16 2024-08-16 中国工程物理研究院激光聚变研究中心 一种判断量子级联激光器快速退火效果的方法

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