JP2009016531A5 - - Google Patents

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Publication number
JP2009016531A5
JP2009016531A5 JP2007176099A JP2007176099A JP2009016531A5 JP 2009016531 A5 JP2009016531 A5 JP 2009016531A5 JP 2007176099 A JP2007176099 A JP 2007176099A JP 2007176099 A JP2007176099 A JP 2007176099A JP 2009016531 A5 JP2009016531 A5 JP 2009016531A5
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JP
Japan
Prior art keywords
semiconductor light
iii nitride
nitride semiconductor
group iii
emitting device
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Application number
JP2007176099A
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English (en)
Japanese (ja)
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JP4714712B2 (ja
JP2009016531A (ja
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Priority claimed from JP2007176099A external-priority patent/JP4714712B2/ja
Priority to JP2007176099A priority Critical patent/JP4714712B2/ja
Priority to TW097124942A priority patent/TWI491064B/zh
Priority to PCT/JP2008/062072 priority patent/WO2009005126A1/ja
Priority to CN2008800221346A priority patent/CN101689592B/zh
Priority to KR1020097026968A priority patent/KR101042417B1/ko
Priority to US12/666,594 priority patent/US8674398B2/en
Publication of JP2009016531A publication Critical patent/JP2009016531A/ja
Publication of JP2009016531A5 publication Critical patent/JP2009016531A5/ja
Publication of JP4714712B2 publication Critical patent/JP4714712B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007176099A 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Active JP4714712B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
TW097124942A TWI491064B (zh) 2007-07-04 2008-07-02 Iii族氮化物半導體發光元件及該製造方法、以及燈
KR1020097026968A KR101042417B1 (ko) 2007-07-04 2008-07-03 Ⅲ족 질화물 반도체 발광 소자 및 그의 제조 방법, 및 램프
CN2008800221346A CN101689592B (zh) 2007-07-04 2008-07-03 Ⅲ族氮化物半导体发光元件及其制造方法和灯
PCT/JP2008/062072 WO2009005126A1 (ja) 2007-07-04 2008-07-03 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
US12/666,594 US8674398B2 (en) 2007-07-04 2008-07-03 Group III nitride semiconductor light emitting device and production method thereof, and lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010162861A Division JP2010232700A (ja) 2010-07-20 2010-07-20 Ｉｉｉ族窒化物半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2009016531A JP2009016531A (ja) 2009-01-22
JP2009016531A5 true JP2009016531A5 (enExample) 2010-06-03
JP4714712B2 JP4714712B2 (ja) 2011-06-29

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ID=40226167

Family Applications (1)

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JP2007176099A Active JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Country Status (6)

Country Link
US (1) US8674398B2 (enExample)
JP (1) JP4714712B2 (enExample)
KR (1) KR101042417B1 (enExample)
CN (1) CN101689592B (enExample)
TW (1) TWI491064B (enExample)
WO (1) WO2009005126A1 (enExample)

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KR101484658B1 (ko) * 2010-04-30 2015-01-21 캐논 아네르바 가부시키가이샤 에피텍셜 박막형성방법, 진공처리장치, 반도체 발광소자 제조방법, 반도체 발광소자, 및 조명장치
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US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
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WO2017094028A1 (en) * 2015-12-02 2017-06-08 Indian Institute Of Technology Bombay Method and apparatus for forming silicon doped gallium nitride (gan) films by a co-sputtering technique
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