JP4710610B2 - 固体撮像装置及び該固体撮像装置を備えた撮像装置 - Google Patents
固体撮像装置及び該固体撮像装置を備えた撮像装置 Download PDFInfo
- Publication number
- JP4710610B2 JP4710610B2 JP2005513276A JP2005513276A JP4710610B2 JP 4710610 B2 JP4710610 B2 JP 4710610B2 JP 2005513276 A JP2005513276 A JP 2005513276A JP 2005513276 A JP2005513276 A JP 2005513276A JP 4710610 B2 JP4710610 B2 JP 4710610B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- imaging device
- state imaging
- microlens array
- convex portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 145
- 238000000034 method Methods 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 38
- 239000011347 resin Substances 0.000 claims description 29
- 229920005989 resin Polymers 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 235000012773 waffles Nutrition 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0075—Arrays characterized by non-optical structures, e.g. having integrated holding or alignment means
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Description
前記受光画素に対応して2次元的に配置されたマイクロレンズアレイと、
前記マイクロレンズアレイの光入射側に配置される透明部材と、を有し、
前記マイクロレンズアレイより高さの高い凸部を、前記マイクロレンズアレイと一体に形成し、
前記凸部の領域内に、前記凸部が欠損した部位を形成し、
前記透明部材に前記凸部の欠損した部位に係合する係合部を形成し、
前記透明部材を前記凸部で支持したことを特徴とする固体撮像装置。
前記マイクロレンズアレイを、熱可塑性の透明感光性樹脂膜に所望のパターンを露光して形成する固体撮像装置のマイクロレンズアレイ製造方法において、
前記透明感光性樹脂膜への露光時に、前記マイクロレンズアレイの領域とそれ以外の領域とで、露光されるパターンを異ならせることにより、
前記マイクロレンズアレイより高さの高い凸部を、前記マイクロレンズアレイと一体に形成することを特徴とする前記3に記載の固体撮像装置。
以下、本発明の第1の実施の形態について説明する。第1の実施の形態は、撮像素子を所謂フリップチップ実装法でプリント基板に実装した撮像装置である。
以下、本発明の第2の実施の形態について説明する。第2の実施の形態は、本発明の固体撮像装置を所謂ボールグリッドアレイタイプに形成した撮像装置の例である。
Claims (17)
- 入射光を光電変換する受光画素を2次元的に配置した受光画素群と、
前記受光画素に対応して2次元的に配置されたマイクロレンズアレイと、
前記マイクロレンズアレイの光入射側に配置される透明部材と、を有し、
前記マイクロレンズアレイより高さの高い凸部を、前記マイクロレンズアレイと一体に形成し、
前記凸部の領域内に、前記凸部が欠損した部位を形成し、
前記透明部材に前記凸部の欠損した部位に係合する係合部を形成し、
前記透明部材を前記凸部で支持したことを特徴とする固体撮像装置。 - 前記凸部は、前記マイクロレンズアレイと同一工程で一体に形成されていることを特徴とする請求項1に記載の固体撮像装置。
- 前記同一工程はリソグラフィーによる工程であることを特徴とする請求項2に記載の固体撮像装置。
- 前記リソグラフィーによる工程は、
前記マイクロレンズアレイを、熱可塑性の透明感光性樹脂膜に所望のパターンを露光して形成する固体撮像装置のマイクロレンズアレイ製造方法において、
前記透明感光性樹脂膜への露光時に、前記マイクロレンズアレイの領域とそれ以外の領域とで、露光されるパターンを異ならせることにより、
前記マイクロレンズアレイより高さの高い凸部を、前記マイクロレンズアレイと一体に形成することを特徴とする請求項3に記載の固体撮像装置。 - 前記透明感光樹脂層を形成する工程は、塗布による工程であることを特徴とする請求項4に記載の固体撮像装置。
- 露光が行なわれた前記透明感光性樹脂膜は、エッチングを用いた方法により現像されることを特徴とする請求項4に記載の固体撮像装置。
- 前記マイクロレンズアレイおよび前記凸部を形成する工程は、熱リフロー法またはエッチバック法による工程であることを特徴とする請求項4に記載の固体撮像装置。
- 前記凸部は、前記マイクロレンズアレイを取り囲むように配置されていることを特徴とする請求項1から7のいずれか1項に記載の固体撮像装置。
- 前記透明部材は、前記凸部と当接した状態で接着され、前記マイクロレンズアレイの領域を封止したことを特徴とする請求項1から8のいずれか1項に記載の固体撮像装置。
- 前記透明部材は、成形部材であることを特徴とする請求項1から8のいずれか1項に記載の固体撮像装置。
- 前記透明部材に赤外光カット機能を持たせたことを特徴とする請求項1から10のいずれか1項に記載の固体撮像装置。
- 前記透明部材の光入射側の面のマイクロレンズを取り囲む位置の一部に、凹部又は凸部を形成したことを特徴とする請求項1から11のいずれか1項に記載の固体撮像装置。
- 前記透明部材に遮光部を設けたことを特徴とする請求項1から12のいずれか1項に記載の固体撮像装置。
- 前記透明部材の少なくとも一方の面に反射防止処理を施したことを特徴とする請求項1から13のいずれか1項に記載の固体撮像装置。
- 前記透明部材の少なくとも一方の面に、回折格子からなる光学的ローパスフィルタを設けたことを特徴とする請求項1から14のいずれか1項に記載の固体撮像装置。
- 請求項1から15のいずれか1項に記載の固体撮像装置と前記固体撮像装置に被写体光を結像させる撮像光学系を備えたことを特徴とする撮像装置。
- 前記透明部材の光入射面側の面に、前記撮像光学系を当接させたことを特徴とする請求項16に記載の撮像装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005513276A JP4710610B2 (ja) | 2003-08-22 | 2004-08-10 | 固体撮像装置及び該固体撮像装置を備えた撮像装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003298418 | 2003-08-22 | ||
JP2003298418 | 2003-08-22 | ||
PCT/JP2004/011731 WO2005020328A1 (ja) | 2003-08-22 | 2004-08-10 | 固体撮像装置及び該固体撮像装置を備えた撮像装置並びに固体撮像装置のマイクロレンズアレイ製造方法 |
JP2005513276A JP4710610B2 (ja) | 2003-08-22 | 2004-08-10 | 固体撮像装置及び該固体撮像装置を備えた撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005020328A1 JPWO2005020328A1 (ja) | 2006-10-19 |
JP4710610B2 true JP4710610B2 (ja) | 2011-06-29 |
Family
ID=34191208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005513276A Expired - Fee Related JP4710610B2 (ja) | 2003-08-22 | 2004-08-10 | 固体撮像装置及び該固体撮像装置を備えた撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7535509B2 (ja) |
JP (1) | JP4710610B2 (ja) |
KR (1) | KR20060059873A (ja) |
WO (1) | WO2005020328A1 (ja) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004003013B3 (de) * | 2004-01-20 | 2005-06-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bilderfassungssystem und dessen Verwendung |
US20060109366A1 (en) * | 2004-05-04 | 2006-05-25 | Tessera, Inc. | Compact lens turret assembly |
US7768574B2 (en) * | 2004-05-04 | 2010-08-03 | Tessera, Inc. | Compact lens turret assembly |
JP4838501B2 (ja) * | 2004-06-15 | 2011-12-14 | 富士通セミコンダクター株式会社 | 撮像装置及びその製造方法 |
JP4365743B2 (ja) * | 2004-07-27 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 撮像装置 |
WO2006040986A1 (ja) * | 2004-10-13 | 2006-04-20 | Sumitomo Bakelite Co., Ltd. | 受光装置 |
KR100691157B1 (ko) * | 2005-04-07 | 2007-03-09 | 삼성전기주식회사 | 포커싱 무조정형 카메라 모듈 |
US7736939B2 (en) * | 2005-07-07 | 2010-06-15 | United Microelectronics Corp. | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor |
US7288757B2 (en) | 2005-09-01 | 2007-10-30 | Micron Technology, Inc. | Microelectronic imaging devices and associated methods for attaching transmissive elements |
JP4673721B2 (ja) * | 2005-10-21 | 2011-04-20 | 富士通セミコンダクター株式会社 | 撮像装置及びその製造方法 |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
JP2008066702A (ja) * | 2006-08-10 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 固体撮像素子及びカメラ |
US7659501B2 (en) * | 2007-03-30 | 2010-02-09 | United Microelectronics Corp. | Image-sensing module of image capture apparatus and manufacturing method thereof |
JP5047679B2 (ja) * | 2007-04-26 | 2012-10-10 | オリンパスメディカルシステムズ株式会社 | 撮像ユニットおよび、この撮像ユニットの製造方法 |
KR20090033070A (ko) * | 2007-09-27 | 2009-04-01 | 엘지이노텍 주식회사 | 카메라 모듈 |
JP2009260269A (ja) * | 2008-03-18 | 2009-11-05 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP2009239106A (ja) * | 2008-03-27 | 2009-10-15 | Sony Corp | 半導体装置及び同半導体装置の製造方法 |
JP5185019B2 (ja) * | 2008-08-25 | 2013-04-17 | パナソニック株式会社 | 半導体装置及びそれを用いた電子機器 |
JP5329903B2 (ja) * | 2008-10-15 | 2013-10-30 | オリンパス株式会社 | 固体撮像装置、固体撮像装置の製造方法 |
JP5511180B2 (ja) * | 2008-12-19 | 2014-06-04 | キヤノン株式会社 | 固体撮像装置の製造方法及び固体撮像装置 |
US8450821B2 (en) * | 2009-03-26 | 2013-05-28 | Micron Technology, Inc. | Method and apparatus providing combined spacer and optical lens element |
KR101069289B1 (ko) * | 2009-08-10 | 2011-10-05 | 주식회사 하이닉스반도체 | 이미지 센서 모듈 및 이미지 센서 모듈의 제조 방법 |
US8884422B2 (en) | 2009-12-31 | 2014-11-11 | Stmicroelectronics Pte Ltd. | Flip-chip fan-out wafer level package for package-on-package applications, and method of manufacture |
US20110156240A1 (en) * | 2009-12-31 | 2011-06-30 | Stmicroelectronics Asia Pacific Pte. Ltd. | Reliable large die fan-out wafer level package and method of manufacture |
US8466997B2 (en) * | 2009-12-31 | 2013-06-18 | Stmicroelectronics Pte Ltd. | Fan-out wafer level package for an optical sensor and method of manufacture thereof |
US8436255B2 (en) * | 2009-12-31 | 2013-05-07 | Stmicroelectronics Pte Ltd. | Fan-out wafer level package with polymeric layer for high reliability |
US8502394B2 (en) * | 2009-12-31 | 2013-08-06 | Stmicroelectronics Pte Ltd. | Multi-stacked semiconductor dice scale package structure and method of manufacturing same |
US8796798B2 (en) * | 2010-01-27 | 2014-08-05 | Ricoh Company, Ltd. | Imaging module, fabricating method therefor, and imaging device |
JP5676953B2 (ja) * | 2010-07-27 | 2015-02-25 | 京セラ株式会社 | 光電変換装置、ならびに光電変換モジュール |
JP2012099639A (ja) * | 2010-11-02 | 2012-05-24 | Toppan Printing Co Ltd | イメージセンサ及びイメージセンサの製造方法 |
US9013037B2 (en) | 2011-09-14 | 2015-04-21 | Stmicroelectronics Pte Ltd. | Semiconductor package with improved pillar bump process and structure |
KR101920314B1 (ko) * | 2011-10-31 | 2019-02-08 | 엘지이노텍 주식회사 | 카메라 모듈 |
US8916481B2 (en) | 2011-11-02 | 2014-12-23 | Stmicroelectronics Pte Ltd. | Embedded wafer level package for 3D and package-on-package applications, and method of manufacture |
US8779601B2 (en) | 2011-11-02 | 2014-07-15 | Stmicroelectronics Pte Ltd | Embedded wafer level package for 3D and package-on-package applications, and method of manufacture |
JP2013109011A (ja) * | 2011-11-17 | 2013-06-06 | Toshiba Corp | カメラモジュール |
JP5872868B2 (ja) * | 2011-12-01 | 2016-03-01 | オリンパス株式会社 | 撮像ユニットおよび撮像ユニットの製造方法 |
JP2013225705A (ja) * | 2013-07-22 | 2013-10-31 | Canon Inc | 固体撮像装置の製造方法及び固体撮像装置 |
JP6561840B2 (ja) * | 2013-12-14 | 2019-08-21 | コニカミノルタ株式会社 | 積層型レンズアレイユニット及び撮像装置 |
JP6200340B2 (ja) * | 2014-02-04 | 2017-09-20 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
KR102055840B1 (ko) | 2014-02-20 | 2019-12-17 | 삼성전자 주식회사 | 이미지 센서 패키지 |
US9917991B2 (en) * | 2014-10-24 | 2018-03-13 | Apple Inc. | Camera actuator |
JP6439604B2 (ja) * | 2015-06-17 | 2018-12-19 | コニカミノルタ株式会社 | 光学素子及び光学素子の製造方法 |
US20180017741A1 (en) * | 2016-07-15 | 2018-01-18 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
US10924667B2 (en) * | 2018-10-04 | 2021-02-16 | Samsung Electronics Co., Ltd. | Image sensor and image sensing method |
US11375092B2 (en) | 2018-10-04 | 2022-06-28 | Samsung Electronics Co., Ltd. | Image sensor and image sensing method |
US11721657B2 (en) | 2019-06-14 | 2023-08-08 | Stmicroelectronics Pte Ltd | Wafer level chip scale package having varying thicknesses |
TWI692068B (zh) * | 2019-08-07 | 2020-04-21 | 勝麗國際股份有限公司 | 封裝元件 |
JP7377082B2 (ja) * | 2019-11-29 | 2023-11-09 | 株式会社ジャパンディスプレイ | 検出装置及び検出装置の製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278871A (ja) * | 1989-04-20 | 1990-11-15 | Toshiba Corp | 固体撮像装置 |
JPH03190166A (ja) * | 1989-12-19 | 1991-08-20 | Dainippon Printing Co Ltd | 固体撮像素子用マイクロレンズの製造方法 |
JPH04206966A (ja) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | 固体撮像素子の製造方法 |
JPH04246859A (ja) * | 1991-01-31 | 1992-09-02 | Kuraray Co Ltd | 撮像素子 |
JPH05110960A (ja) * | 1991-10-17 | 1993-04-30 | Olympus Optical Co Ltd | 固体撮像装置 |
JPH0888339A (ja) * | 1994-09-16 | 1996-04-02 | Fuji Film Micro Device Kk | 固体撮像素子 |
JP2002176158A (ja) * | 1992-06-23 | 2002-06-21 | Sony Corp | 固体撮像装置 |
JP2002329850A (ja) * | 2001-05-01 | 2002-11-15 | Canon Inc | チップサイズパッケージおよびその製造方法 |
JP2003068908A (ja) * | 2001-08-28 | 2003-03-07 | Kyocera Corp | 撮像素子収納用パッケージ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4853741A (ja) | 1971-10-08 | 1973-07-28 | ||
US5119235A (en) * | 1989-12-21 | 1992-06-02 | Nikon Corporation | Focusing screen and method of manufacturing same |
US5177637A (en) * | 1990-09-11 | 1993-01-05 | Nikon Corporation | Focusing screen including different height microlenses arranged in a cyclical pattern |
JP2968357B2 (ja) | 1991-02-01 | 1999-10-25 | 株式会社クラレ | 光学的ローパスフィルタ |
JP4023043B2 (ja) * | 1999-08-31 | 2007-12-19 | セイコーエプソン株式会社 | マイクロレンズアレイ基板の製造方法 |
TW540157B (en) * | 2001-05-31 | 2003-07-01 | Konishiroku Photo Ind | CMOS image sensor |
JP3778817B2 (ja) | 2001-07-11 | 2006-05-24 | 富士フイルムマイクロデバイス株式会社 | 固体撮像装置およびその製造方法 |
JP2003114316A (ja) | 2001-10-05 | 2003-04-18 | Japan Science & Technology Corp | 光学素子 |
US6744109B2 (en) * | 2002-06-26 | 2004-06-01 | Agilent Technologies, Inc. | Glass attachment over micro-lens arrays |
US7414661B2 (en) * | 2002-08-13 | 2008-08-19 | Micron Technology, Inc. | CMOS image sensor using gradient index chip scale lenses |
-
2004
- 2004-08-10 KR KR1020057020468A patent/KR20060059873A/ko not_active Application Discontinuation
- 2004-08-10 US US10/914,952 patent/US7535509B2/en not_active Expired - Fee Related
- 2004-08-10 JP JP2005513276A patent/JP4710610B2/ja not_active Expired - Fee Related
- 2004-08-10 WO PCT/JP2004/011731 patent/WO2005020328A1/ja active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278871A (ja) * | 1989-04-20 | 1990-11-15 | Toshiba Corp | 固体撮像装置 |
JPH03190166A (ja) * | 1989-12-19 | 1991-08-20 | Dainippon Printing Co Ltd | 固体撮像素子用マイクロレンズの製造方法 |
JPH04206966A (ja) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | 固体撮像素子の製造方法 |
JPH04246859A (ja) * | 1991-01-31 | 1992-09-02 | Kuraray Co Ltd | 撮像素子 |
JPH05110960A (ja) * | 1991-10-17 | 1993-04-30 | Olympus Optical Co Ltd | 固体撮像装置 |
JP2002176158A (ja) * | 1992-06-23 | 2002-06-21 | Sony Corp | 固体撮像装置 |
JPH0888339A (ja) * | 1994-09-16 | 1996-04-02 | Fuji Film Micro Device Kk | 固体撮像素子 |
JP2002329850A (ja) * | 2001-05-01 | 2002-11-15 | Canon Inc | チップサイズパッケージおよびその製造方法 |
JP2003068908A (ja) * | 2001-08-28 | 2003-03-07 | Kyocera Corp | 撮像素子収納用パッケージ |
Also Published As
Publication number | Publication date |
---|---|
WO2005020328A1 (ja) | 2005-03-03 |
US7535509B2 (en) | 2009-05-19 |
US20050041134A1 (en) | 2005-02-24 |
KR20060059873A (ko) | 2006-06-02 |
JPWO2005020328A1 (ja) | 2006-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4710610B2 (ja) | 固体撮像装置及び該固体撮像装置を備えた撮像装置 | |
TWI394269B (zh) | 電子元件晶圓模組、電子元件晶圓模組之製造方法、電子元件模組及電子資訊裝置 | |
US7265916B2 (en) | Module for optical devices, and manufacturing method of module for optical devices | |
EP1389804B1 (en) | CMOS image sensor using gradient index chip scale lenses | |
JP2005109092A (ja) | 固体撮像装置及び該固体撮像装置を備えた撮像装置 | |
JP4764941B2 (ja) | 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器 | |
JP4698874B2 (ja) | イメージセンサモジュール、およびイメージセンサモジュールの製造方法 | |
JP5009209B2 (ja) | ウエハ状光学装置およびその製造方法、電子素子ウエハモジュール、センサウエハモジュール、電子素子モジュール、センサモジュール、電子情報機器 | |
EP1239519A2 (en) | Image pickup model and image pickup device | |
JP4768060B2 (ja) | 光学素子、光学素子ウエハ、光学素子ウエハモジュール、光学素子モジュール、光学素子モジュールの製造方法、電子素子ウエハモジュール、電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器 | |
US20100044815A1 (en) | Cmos image sensor package and camera module using same | |
KR100809682B1 (ko) | 투명 커버가 부착되어 있는 광학 장치의 제조방법 및 이를이용한 광학 장치 모듈의 제조방법 | |
JP2003204053A (ja) | 撮像モジュール及び該撮像モジュールの製造方法、デジタルカメラ | |
KR20060046412A (ko) | 촬상장치 및 전자기기 | |
US7630016B2 (en) | Imaging device having transparent unit and electronic apparatus | |
JP2009290033A (ja) | 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器 | |
JP2002329851A (ja) | 撮像モジュールとその製造方法、および撮像モジュールを備えた撮像機器 | |
JP2006080597A (ja) | 撮像モジュール及び撮像モジュールの製造方法 | |
JP2011165774A (ja) | 固体撮像装置の製造方法 | |
JP2002368235A (ja) | 半導体装置及びその製造方法 | |
JP4957564B2 (ja) | 固体撮像素子およびそれを用いた撮像装置 | |
JP3998234B2 (ja) | 撮像装置 | |
WO2011058737A1 (ja) | 固体撮像装置及びその製造方法 | |
JP2009170585A (ja) | 固体撮像装置 | |
JP2002222935A (ja) | 固体撮像装置およびその製造方法、固体撮像システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070706 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101104 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110120 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20110215 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110222 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110307 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |