JP4706877B2 - レジスト材料及びパターン形成方法 - Google Patents

レジスト材料及びパターン形成方法 Download PDF

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Publication number
JP4706877B2
JP4706877B2 JP2008268182A JP2008268182A JP4706877B2 JP 4706877 B2 JP4706877 B2 JP 4706877B2 JP 2008268182 A JP2008268182 A JP 2008268182A JP 2008268182 A JP2008268182 A JP 2008268182A JP 4706877 B2 JP4706877 B2 JP 4706877B2
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JP
Japan
Prior art keywords
group
carbon atoms
acid
synthesis example
resist material
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Expired - Lifetime
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JP2008268182A
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English (en)
Japanese (ja)
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JP2009145871A (ja
Inventor
畠山　　潤
知洋 小林
武 渡辺
岳志 永田
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to JP2008268182A priority Critical patent/JP4706877B2/ja
Publication of JP2009145871A publication Critical patent/JP2009145871A/ja
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Publication of JP4706877B2 publication Critical patent/JP4706877B2/ja
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Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D207/04—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members
    • C07D207/10—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D295/00—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms
    • C07D295/04—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms
    • C07D295/08—Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by singly bound oxygen or sulfur atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
JP2008268182A 2000-11-29 2008-10-17 レジスト材料及びパターン形成方法 Expired - Lifetime JP4706877B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008268182A JP4706877B2 (ja) 2000-11-29 2008-10-17 レジスト材料及びパターン形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000362800 2000-11-29
JP2000362800 2000-11-29
JP2008268182A JP4706877B2 (ja) 2000-11-29 2008-10-17 レジスト材料及びパターン形成方法

Related Parent Applications (1)

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JP2001359331A Division JP4320520B2 (ja) 2000-11-29 2001-11-26 レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
JP2009145871A JP2009145871A (ja) 2009-07-02
JP4706877B2 true JP4706877B2 (ja) 2011-06-22

Family

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Family Applications (1)

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JP2008268182A Expired - Lifetime JP4706877B2 (ja) 2000-11-29 2008-10-17 レジスト材料及びパターン形成方法

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US (1) US6749988B2 (US06749988-20040615-C00052.png)
JP (1) JP4706877B2 (US06749988-20040615-C00052.png)
KR (2) KR100670090B1 (US06749988-20040615-C00052.png)
TW (1) TW555754B (US06749988-20040615-C00052.png)

Families Citing this family (53)

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Publication number Priority date Publication date Assignee Title
KR100604751B1 (ko) * 2001-08-24 2006-07-26 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물
JP2004334060A (ja) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 化学増幅型レジスト用光酸発生剤及びそれを含有するレジスト材料並びにパターン形成方法
JP4029288B2 (ja) * 2003-05-21 2008-01-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI300165B (en) * 2003-08-13 2008-08-21 Tokyo Ohka Kogyo Co Ltd Resin for resist, positive resist composition and resist pattern formation method
US6991890B2 (en) * 2004-02-06 2006-01-31 International Business Machines Corporation Negative photoresist composition involving non-crosslinking chemistry
US7763412B2 (en) * 2004-06-08 2010-07-27 Tokyo Ohka Kogyo Co., Ltd. Polymer, positive resist composition and method for forming resist pattern
CN1904736B (zh) * 2005-07-25 2012-06-13 日产化学工业株式会社 正型感光性树脂组合物和由其得到的固化膜
JP4671035B2 (ja) * 2005-10-14 2011-04-13 信越化学工業株式会社 化学増幅型レジスト材料及びパターン形成方法
US20100168197A1 (en) * 2007-02-28 2010-07-01 Naresh Kumar Muscarinic receptor antagonists
CA2705092A1 (en) * 2007-11-07 2009-05-14 Schering Corporation Novel modulators of cell cycle checkpoints and their use in combination with checkpoint kinase inhibitors
JP5071658B2 (ja) * 2008-02-14 2012-11-14 信越化学工業株式会社 レジスト材料、レジスト保護膜材料、及びパターン形成方法
US8993535B2 (en) 2009-09-04 2015-03-31 Merck Sharp & Dohme Corp. Modulators of cell cycle checkpoints and their use in combination with checkpoint kinase inhibitors
JP5565231B2 (ja) * 2009-09-25 2014-08-06 住友化学株式会社 レジスト組成物
JP5464131B2 (ja) * 2009-12-02 2014-04-09 信越化学工業株式会社 化学増幅レジスト材料並びにこれを用いたパターン形成方法
JP5617799B2 (ja) 2010-12-07 2014-11-05 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
JP5434938B2 (ja) 2011-03-01 2014-03-05 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP6001278B2 (ja) * 2011-03-17 2016-10-05 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5953865B2 (ja) 2011-04-01 2016-07-20 住友化学株式会社 レジスト組成物
TWI525082B (zh) * 2011-04-07 2016-03-11 住友化學股份有限公司 鹽及含該鹽之光阻組成物
CA2839845C (en) * 2011-04-25 2019-08-20 Nooter/Eriksen, Inc. Multidrum evaporator
JP6013798B2 (ja) 2011-07-19 2016-10-25 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
WO2013172239A1 (ja) * 2012-05-17 2013-11-21 Jsr株式会社 酸拡散制御剤、感放射線性樹脂組成物、レジストパターン形成方法、化合物及び化合物の製造方法
JP6145303B2 (ja) * 2012-05-18 2017-06-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6065786B2 (ja) 2012-09-14 2017-01-25 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP6028716B2 (ja) 2013-11-05 2016-11-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6248861B2 (ja) 2014-08-19 2017-12-20 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
WO2016027546A1 (ja) 2014-08-22 2016-02-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP6222057B2 (ja) 2014-11-25 2017-11-01 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP6606926B2 (ja) * 2015-08-27 2019-11-20 Ｊｓｒ株式会社 感放射線性樹脂組成物、レジストパターン形成方法及び化合物
JP6372460B2 (ja) 2015-09-15 2018-08-15 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6477407B2 (ja) 2015-10-15 2019-03-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6477409B2 (ja) 2015-10-19 2019-03-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
US9897914B2 (en) 2015-12-28 2018-02-20 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US10222696B2 (en) 2015-12-28 2019-03-05 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US9958776B2 (en) 2015-12-28 2018-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP6459989B2 (ja) 2016-01-20 2019-01-30 信越化学工業株式会社 レジスト材料及びパターン形成方法
US10990012B2 (en) * 2016-05-03 2021-04-27 Dow Silicones Corporation Silsesquioxane resin and oxaamine composition
US10295904B2 (en) 2016-06-07 2019-05-21 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP7067081B2 (ja) 2017-02-20 2022-05-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6645464B2 (ja) 2017-03-17 2020-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6645463B2 (ja) 2017-03-17 2020-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6904302B2 (ja) 2017-06-14 2021-07-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
US10871711B2 (en) 2017-09-25 2020-12-22 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP6874635B2 (ja) 2017-10-13 2021-05-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6874634B2 (ja) 2017-10-13 2021-05-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6927176B2 (ja) 2017-10-16 2021-08-25 信越化学工業株式会社 レジスト材料及びパターン形成方法
US11435665B2 (en) 2018-05-31 2022-09-06 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP7096189B2 (ja) 2019-03-22 2022-07-05 信越化学工業株式会社 レジスト組成物及びパターン形成方法
US11506981B2 (en) * 2019-05-31 2022-11-22 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and pattern formation methods
JP7354986B2 (ja) 2019-11-20 2023-10-03 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7388346B2 (ja) 2020-02-14 2023-11-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
US11940728B2 (en) 2020-09-28 2024-03-26 Shin-Etsu Chemical Co., Ltd. Molecular resist composition and patterning process

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04279540A (ja) * 1990-09-20 1992-10-05 Union Carbide Chem & Plast Co Inc 脱炭酸方法
JPH07333851A (ja) * 1994-06-08 1995-12-22 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH10177250A (ja) * 1996-10-16 1998-06-30 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH1152575A (ja) * 1997-08-04 1999-02-26 Sumitomo Chem Co Ltd 化学増幅型ポジ型フォトレジスト組成物
JPH1184639A (ja) * 1997-06-26 1999-03-26 Shin Etsu Chem Co Ltd レジスト材料
JP2000066382A (ja) * 1998-08-21 2000-03-03 Jsr Corp 感放射線性樹脂組成物
JP2000206681A (ja) * 1999-01-14 2000-07-28 Fuji Photo Film Co Ltd 感光性組成物及び回路パタ―ン形成方法
JP2001027808A (ja) * 1999-07-13 2001-01-30 Nec Corp 化学増幅系ポジ型レジスト

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093615A (en) * 1971-09-13 1978-06-06 The Dow Chemical Company Cyclic oligomers of N-substituted aziridines
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS60218642A (ja) * 1984-04-16 1985-11-01 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料の硬調現像方法
EP0249139B2 (en) 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
US5310619A (en) 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH0619576B2 (ja) * 1986-08-21 1994-03-16 日本合成ゴム株式会社 剥離液組成物
JPS63149640A (ja) 1986-12-12 1988-06-22 Konica Corp 感光性組成物および感光性平版印刷版
DE3827567A1 (de) * 1988-08-13 1990-02-22 Basf Ag Waessrige entwicklerloesung fuer positiv arbeitende photoresists
EP0523957A1 (en) 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
JPH05113666A (ja) 1991-10-21 1993-05-07 Nippon Zeon Co Ltd レジスト組成物
US5580695A (en) 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
JP3010607B2 (ja) 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
US5609989A (en) 1995-06-06 1997-03-11 International Business Machines, Corporation Acid scavengers for use in chemically amplified photoresists
JPH1077264A (ja) * 1996-09-05 1998-03-24 Shin Etsu Chem Co Ltd Ｎ−（２−ニトロベンジルオキシカルボニル）環状アミン類およびその製造方法
WO1998037458A1 (fr) 1997-02-20 1998-08-27 Nippon Zeon Co., Ltd. Composition d'un agent de reserve
JP3414197B2 (ja) * 1997-05-26 2003-06-09 住友化学工業株式会社 フォトレジスト組成物

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04279540A (ja) * 1990-09-20 1992-10-05 Union Carbide Chem & Plast Co Inc 脱炭酸方法
JPH07333851A (ja) * 1994-06-08 1995-12-22 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH10177250A (ja) * 1996-10-16 1998-06-30 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH1184639A (ja) * 1997-06-26 1999-03-26 Shin Etsu Chem Co Ltd レジスト材料
JPH1152575A (ja) * 1997-08-04 1999-02-26 Sumitomo Chem Co Ltd 化学増幅型ポジ型フォトレジスト組成物
JP2000066382A (ja) * 1998-08-21 2000-03-03 Jsr Corp 感放射線性樹脂組成物
JP2000206681A (ja) * 1999-01-14 2000-07-28 Fuji Photo Film Co Ltd 感光性組成物及び回路パタ―ン形成方法
JP2001027808A (ja) * 1999-07-13 2001-01-30 Nec Corp 化学増幅系ポジ型レジスト

Also Published As

Publication number Publication date
KR100670090B1 (ko) 2007-01-17
US6749988B2 (en) 2004-06-15
TW555754B (en) 2003-10-01
KR100699381B1 (ko) 2007-03-26
KR20020042459A (ko) 2002-06-05
KR20060083401A (ko) 2006-07-20
JP2009145871A (ja) 2009-07-02
US20020098443A1 (en) 2002-07-25

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