JP4702822B2 - 終端構造及びトレンチ金属酸化膜半導体素子 - Google Patents

終端構造及びトレンチ金属酸化膜半導体素子 Download PDF

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Publication number
JP4702822B2
JP4702822B2 JP2001292502A JP2001292502A JP4702822B2 JP 4702822 B2 JP4702822 B2 JP 4702822B2 JP 2001292502 A JP2001292502 A JP 2001292502A JP 2001292502 A JP2001292502 A JP 2001292502A JP 4702822 B2 JP4702822 B2 JP 4702822B2
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trench
semiconductor substrate
metal oxide
layer
termination structure
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Expired - Lifetime
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JP2001292502A
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Japanese (ja)
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JP2002217426A5 (enExample
JP2002217426A (ja
Inventor
ウェイ スウ チン
ミン リウ チャン
チェ カオ ミン
ジン サイ ミン
ジュ クン プ
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ゼネラル セミコンダクター，インク．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

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  • Electrodes Of Semiconductors (AREA)
JP2001292502A 2000-09-22 2001-09-25 終端構造及びトレンチ金属酸化膜半導体素子 Expired - Lifetime JP4702822B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/668,663 US6396090B1 (en) 2000-09-22 2000-09-22 Trench MOS device and termination structure
US09/668,663 2000-09-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010044627A Division JP5379045B2 (ja) 2000-09-22 2010-03-01 トレンチ金属酸化膜半導体素子

Publications (3)

Publication Number Publication Date
JP2002217426A JP2002217426A (ja) 2002-08-02
JP2002217426A5 JP2002217426A5 (enExample) 2005-07-14
JP4702822B2 true JP4702822B2 (ja) 2011-06-15

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JP2001292502A Expired - Lifetime JP4702822B2 (ja) 2000-09-22 2001-09-25 終端構造及びトレンチ金属酸化膜半導体素子
JP2010044627A Expired - Lifetime JP5379045B2 (ja) 2000-09-22 2010-03-01 トレンチ金属酸化膜半導体素子

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US (1) US6396090B1 (enExample)
EP (1) EP1191603A3 (enExample)
JP (2) JP4702822B2 (enExample)
CN (1) CN1209822C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010157761A (ja) * 2000-09-22 2010-07-15 General Semiconductor Inc 終端構造及びトレンチ金属酸化膜半導体素子

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2381122B (en) * 2001-10-16 2006-04-05 Zetex Plc Termination structure for a semiconductor device
JP3631464B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 半導体装置
US6828649B2 (en) * 2002-05-07 2004-12-07 Agere Systems Inc. Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor
US6855593B2 (en) * 2002-07-11 2005-02-15 International Rectifier Corporation Trench Schottky barrier diode
CN100479187C (zh) * 2003-01-29 2009-04-15 国际整流器有限公司 槽沟mosfet技术在直流-直流变换器中的应用
US7009228B1 (en) * 2003-03-04 2006-03-07 Lovoltech, Incorporated Guard ring structure and method for fabricating same
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
GB0312512D0 (en) 2003-05-31 2003-07-09 Koninkl Philips Electronics Nv Termination structures for semiconductor devices and the manufacture thereof
US7754550B2 (en) * 2003-07-10 2010-07-13 International Rectifier Corporation Process for forming thick oxides on Si or SiC for semiconductor devices
US6987305B2 (en) * 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
KR100964400B1 (ko) * 2003-10-01 2010-06-17 삼성전자주식회사 반도체 소자의 콘택 구조체
CN100505302C (zh) * 2003-12-24 2009-06-24 丰田自动车株式会社 沟槽栅极场效应器件
CN101421832A (zh) * 2004-03-01 2009-04-29 国际整流器公司 沟槽器件的自对准接触结构
US6927451B1 (en) * 2004-03-26 2005-08-09 Siliconix Incorporated Termination for trench MIS device having implanted drain-drift region
JP2006120789A (ja) * 2004-10-20 2006-05-11 Toshiba Corp 半導体装置
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7750398B2 (en) * 2006-09-26 2010-07-06 Force-Mos Technology Corporation Trench MOSFET with trench termination and manufacture thereof
US7560355B2 (en) * 2006-10-24 2009-07-14 Vishay General Semiconductor Llc Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same
US8017494B2 (en) * 2007-01-31 2011-09-13 International Rectifier Corporation Termination trench structure for mosgated device and process for its manufacture
KR100861213B1 (ko) * 2007-04-17 2008-09-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US8269265B2 (en) * 2008-07-14 2012-09-18 Microsemi Semiconductor (U.S.) Inc. Trench capacitor for high voltage processes and method of manufacturing the same
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
JP5531620B2 (ja) * 2010-01-05 2014-06-25 富士電機株式会社 半導体装置
CN101853854B (zh) * 2010-03-12 2012-11-21 无锡新洁能功率半导体有限公司 一种改进型终端结构的沟槽功率mos器件
US8928065B2 (en) 2010-03-16 2015-01-06 Vishay General Semiconductor Llc Trench DMOS device with improved termination structure for high voltage applications
US8853770B2 (en) * 2010-03-16 2014-10-07 Vishay General Semiconductor Llc Trench MOS device with improved termination structure for high voltage applications
TWI455287B (zh) 2010-11-04 2014-10-01 大中積體電路股份有限公司 功率半導體元件之終端結構及其製作方法
JP5671966B2 (ja) * 2010-11-17 2015-02-18 富士電機株式会社 半導体装置の製造方法および半導体装置
TWI414070B (zh) * 2011-06-02 2013-11-01 Anpec Electronics Corp 半導體功率元件
CN103107193A (zh) * 2011-11-11 2013-05-15 上海华虹Nec电子有限公司 一种沟槽型绝缘栅场效应管
CN102437188A (zh) * 2011-11-25 2012-05-02 无锡新洁能功率半导体有限公司 功率mosfet器件及其制造方法
CN103137690B (zh) * 2011-11-29 2016-10-26 上海华虹宏力半导体制造有限公司 一种沟槽型绝缘栅场效应管及其制造方法
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
CN103426910B (zh) 2012-05-24 2016-01-20 杰力科技股份有限公司 功率半导体元件及其边缘终端结构
WO2013180186A1 (ja) * 2012-05-30 2013-12-05 国立大学法人九州工業大学 高電圧絶縁ゲート型電力用半導体装置およびその製造方法
CN103578972B (zh) * 2012-07-26 2016-06-29 无锡华润上华半导体有限公司 具有场终止结构的igbt背面多晶硅保护层的去除方法
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
JP6296445B2 (ja) 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
US9570542B2 (en) 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing
US20180012974A1 (en) * 2014-11-18 2018-01-11 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9431205B1 (en) 2015-04-13 2016-08-30 International Business Machines Corporation Fold over emitter and collector field emission transistor
JP7433611B2 (ja) * 2016-04-28 2024-02-20 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
CN105977256B (zh) * 2016-06-15 2018-11-23 武汉新芯集成电路制造有限公司 一种dram器件的制备方法
US11081554B2 (en) 2017-10-12 2021-08-03 Semiconductor Components Industries, Llc Insulated gate semiconductor device having trench termination structure and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
CN109585572A (zh) * 2018-12-29 2019-04-05 矽力杰半导体技术(杭州)有限公司 半导体器件及其制造方法
CN113921394A (zh) * 2020-07-08 2022-01-11 上海贝岭股份有限公司 超级势垒整流器的制备方法以及超级势垒整流器
CN113809179A (zh) * 2021-10-20 2021-12-17 无锡橙芯微电子科技有限公司 一种sic dmos器件结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04256369A (ja) * 1991-02-08 1992-09-11 Nissan Motor Co Ltd 半導体装置
JP2912508B2 (ja) * 1992-11-13 1999-06-28 シャープ株式会社 縦型ｍｏｓトランジスタの製造方法
JPH08213606A (ja) * 1995-02-06 1996-08-20 Fuji Electric Co Ltd 炭化ケイ素横形高耐圧ｍｏｓｆｅｔ
DE19636302C2 (de) * 1995-09-06 1998-08-20 Denso Corp Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung
US6180966B1 (en) * 1997-03-25 2001-01-30 Hitachi, Ltd. Trench gate type semiconductor device with current sensing cell
JP4164892B2 (ja) * 1997-06-30 2008-10-15 株式会社デンソー 半導体装置及びその製造方法
JPH11135512A (ja) * 1997-10-31 1999-05-21 Mitsubishi Electric Corp 電力用半導体装置及びその製造方法
JP4463888B2 (ja) * 1998-09-25 2010-05-19 Ｎｅｃエレクトロニクス株式会社 絶縁ゲート型半導体装置およびその製造方法
JP3417852B2 (ja) * 1998-09-29 2003-06-16 株式会社東芝 電力用素子
DE59902506D1 (de) * 1999-01-11 2002-10-02 Fraunhofer Ges Forschung Mos-leistungsbauelement und verfahren zum herstellen desselben
GB0002235D0 (en) * 2000-02-02 2000-03-22 Koninkl Philips Electronics Nv Trenched schottky rectifiers
US6396090B1 (en) * 2000-09-22 2002-05-28 Industrial Technology Research Institute Trench MOS device and termination structure
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010157761A (ja) * 2000-09-22 2010-07-15 General Semiconductor Inc 終端構造及びトレンチ金属酸化膜半導体素子

Also Published As

Publication number Publication date
US6396090B1 (en) 2002-05-28
EP1191603A2 (en) 2002-03-27
EP1191603A3 (en) 2004-11-17
JP5379045B2 (ja) 2013-12-25
JP2002217426A (ja) 2002-08-02
CN1209822C (zh) 2005-07-06
CN1348220A (zh) 2002-05-08
JP2010157761A (ja) 2010-07-15

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