JP2002217426A5 - - Google Patents

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Publication number
JP2002217426A5
JP2002217426A5 JP2001292502A JP2001292502A JP2002217426A5 JP 2002217426 A5 JP2002217426 A5 JP 2002217426A5 JP 2001292502 A JP2001292502 A JP 2001292502A JP 2001292502 A JP2001292502 A JP 2001292502A JP 2002217426 A5 JP2002217426 A5 JP 2002217426A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001292502A
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Japanese (ja)
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JP4702822B2 (ja
JP2002217426A (ja
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Priority claimed from US09/668,663 external-priority patent/US6396090B1/en
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Publication of JP2002217426A publication Critical patent/JP2002217426A/ja
Publication of JP2002217426A5 publication Critical patent/JP2002217426A5/ja
Application granted granted Critical
Publication of JP4702822B2 publication Critical patent/JP4702822B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001292502A 2000-09-22 2001-09-25 終端構造及びトレンチ金属酸化膜半導体素子 Expired - Lifetime JP4702822B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/668,663 US6396090B1 (en) 2000-09-22 2000-09-22 Trench MOS device and termination structure
US09/668,663 2000-09-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010044627A Division JP5379045B2 (ja) 2000-09-22 2010-03-01 トレンチ金属酸化膜半導体素子

Publications (3)

Publication Number Publication Date
JP2002217426A JP2002217426A (ja) 2002-08-02
JP2002217426A5 true JP2002217426A5 (enExample) 2005-07-14
JP4702822B2 JP4702822B2 (ja) 2011-06-15

Family

ID=24683263

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001292502A Expired - Lifetime JP4702822B2 (ja) 2000-09-22 2001-09-25 終端構造及びトレンチ金属酸化膜半導体素子
JP2010044627A Expired - Lifetime JP5379045B2 (ja) 2000-09-22 2010-03-01 トレンチ金属酸化膜半導体素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2010044627A Expired - Lifetime JP5379045B2 (ja) 2000-09-22 2010-03-01 トレンチ金属酸化膜半導体素子

Country Status (4)

Country Link
US (1) US6396090B1 (enExample)
EP (1) EP1191603A3 (enExample)
JP (2) JP4702822B2 (enExample)
CN (1) CN1209822C (enExample)

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JP5531620B2 (ja) * 2010-01-05 2014-06-25 富士電機株式会社 半導体装置
CN101853854B (zh) * 2010-03-12 2012-11-21 无锡新洁能功率半导体有限公司 一种改进型终端结构的沟槽功率mos器件
US8928065B2 (en) 2010-03-16 2015-01-06 Vishay General Semiconductor Llc Trench DMOS device with improved termination structure for high voltage applications
US8853770B2 (en) * 2010-03-16 2014-10-07 Vishay General Semiconductor Llc Trench MOS device with improved termination structure for high voltage applications
TWI455287B (zh) 2010-11-04 2014-10-01 大中積體電路股份有限公司 功率半導體元件之終端結構及其製作方法
JP5671966B2 (ja) * 2010-11-17 2015-02-18 富士電機株式会社 半導体装置の製造方法および半導体装置
TWI414070B (zh) * 2011-06-02 2013-11-01 Anpec Electronics Corp 半導體功率元件
CN103107193A (zh) * 2011-11-11 2013-05-15 上海华虹Nec电子有限公司 一种沟槽型绝缘栅场效应管
CN102437188A (zh) * 2011-11-25 2012-05-02 无锡新洁能功率半导体有限公司 功率mosfet器件及其制造方法
CN103137690B (zh) * 2011-11-29 2016-10-26 上海华虹宏力半导体制造有限公司 一种沟槽型绝缘栅场效应管及其制造方法
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
CN103426910B (zh) 2012-05-24 2016-01-20 杰力科技股份有限公司 功率半导体元件及其边缘终端结构
WO2013180186A1 (ja) * 2012-05-30 2013-12-05 国立大学法人九州工業大学 高電圧絶縁ゲート型電力用半導体装置およびその製造方法
CN103578972B (zh) * 2012-07-26 2016-06-29 无锡华润上华半导体有限公司 具有场终止结构的igbt背面多晶硅保护层的去除方法
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US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
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JP6296445B2 (ja) 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
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CN105977256B (zh) * 2016-06-15 2018-11-23 武汉新芯集成电路制造有限公司 一种dram器件的制备方法
US11081554B2 (en) 2017-10-12 2021-08-03 Semiconductor Components Industries, Llc Insulated gate semiconductor device having trench termination structure and method
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
CN109585572A (zh) * 2018-12-29 2019-04-05 矽力杰半导体技术(杭州)有限公司 半导体器件及其制造方法
CN113921394A (zh) * 2020-07-08 2022-01-11 上海贝岭股份有限公司 超级势垒整流器的制备方法以及超级势垒整流器
CN113809179A (zh) * 2021-10-20 2021-12-17 无锡橙芯微电子科技有限公司 一种sic dmos器件结构

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