JP4610422B2 - ＺｎＯ基板の製造方法 - Google Patents

ＺｎＯ基板の製造方法 Download PDF

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Publication number
JP4610422B2
JP4610422B2 JP2005180990A JP2005180990A JP4610422B2 JP 4610422 B2 JP4610422 B2 JP 4610422B2 JP 2005180990 A JP2005180990 A JP 2005180990A JP 2005180990 A JP2005180990 A JP 2005180990A JP 4610422 B2 JP4610422 B2 JP 4610422B2
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Japan
Prior art keywords
zno
substrate
heat treatment
concentration
manufacturing
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JP2005180990A
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English (en)
Japanese (ja)
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JP2007001787A (ja
JP2007001787A5 (https=
Inventor
道宏 佐野
裕幸 加藤
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2005180990A priority Critical patent/JP4610422B2/ja
Priority to US11/392,863 priority patent/US7288208B2/en
Publication of JP2007001787A publication Critical patent/JP2007001787A/ja
Publication of JP2007001787A5 publication Critical patent/JP2007001787A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
JP2005180990A 2005-06-21 2005-06-21 ＺｎＯ基板の製造方法 Expired - Fee Related JP4610422B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005180990A JP4610422B2 (ja) 2005-06-21 2005-06-21 ＺｎＯ基板の製造方法
US11/392,863 US7288208B2 (en) 2005-06-21 2006-03-29 Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005180990A JP4610422B2 (ja) 2005-06-21 2005-06-21 ＺｎＯ基板の製造方法

Publications (3)

Publication Number Publication Date
JP2007001787A JP2007001787A (ja) 2007-01-11
JP2007001787A5 JP2007001787A5 (https=) 2008-07-24
JP4610422B2 true JP4610422B2 (ja) 2011-01-12

Family

ID=37572344

Family Applications (1)

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JP2005180990A Expired - Fee Related JP4610422B2 (ja) 2005-06-21 2005-06-21 ＺｎＯ基板の製造方法

Country Status (2)

Country Link
US (1) US7288208B2 (https=)
JP (1) JP4610422B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112006002133B4 (de) * 2005-08-09 2017-10-12 Stanley Electric Co. Ltd. ZnO-Kristall, sein Aufwuchsverfahren und ein Herstellungsverfahren für eine Leuchtvorrichtung
JP4953879B2 (ja) * 2007-03-29 2012-06-13 スタンレー電気株式会社 半導体装置とその製造方法、及びテンプレート基板
JP2009029688A (ja) * 2007-06-28 2009-02-12 Rohm Co Ltd ＺｎＯ系基板及びＺｎＯ系基板の処理方法
JP2010053017A (ja) 2008-04-04 2010-03-11 Fukuda Crystal Laboratory 酸化亜鉛単結晶およびその製造方法
JP5411681B2 (ja) * 2009-12-09 2014-02-12 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法
GB201010915D0 (en) 2010-06-28 2010-08-11 Uni I Oslo Process
JP5647881B2 (ja) * 2010-12-17 2015-01-07 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法
JP5654910B2 (ja) * 2011-03-14 2015-01-14 スタンレー電気株式会社 酸化亜鉛基板の処理方法
JP5647922B2 (ja) * 2011-03-16 2015-01-07 スタンレー電気株式会社 酸化亜鉛系基板の処理方法及び成長層付き基板

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2793047B2 (ja) 1991-02-08 1998-09-03 シャープ株式会社 静止画記録再生装置
JPH0581787A (ja) 1991-09-20 1993-04-02 Mita Ind Co Ltd 記録媒体の記録装置
JPH05165935A (ja) 1991-10-18 1993-07-02 Konica Corp 画像撮影装置及び画像ファイル装置
CA2081762C (en) 1991-12-05 2002-08-13 Henry D. Hendrix Method and apparatus to improve a video signal
JPH05158778A (ja) 1991-12-09 1993-06-25 Canon Inc 画像情報記憶装置
JP3561930B2 (ja) 1993-08-14 2004-09-08 ソニー株式会社 画像検索用ｉｄ信号の記録方法、画像検索方法、及び記録画像再生装置
JP3610084B2 (ja) 1993-11-19 2005-01-12 キヤノン株式会社 記録装置
US5687160A (en) 1993-12-10 1997-11-11 Sony Corporation Optical recording medium with lists having playback control information
JPH08106721A (ja) 1994-10-07 1996-04-23 Sony Corp 円盤状記録媒体の記録装置及び再生装置
KR100197585B1 (ko) 1995-01-16 1999-06-15 윤종용 영상(image)/오디오정보(information)를 반도체메모리에 기록/재생하기 위한 장치
JPH08205014A (ja) 1995-01-31 1996-08-09 Casio Comput Co Ltd 電子スチルカメラ
US5745643A (en) 1995-04-06 1998-04-28 Kabushiki Kaisha Toshiba System for and method of reproducing playback data appropriately by the use of attribute information on the playback data
EP0915470A3 (en) 1995-08-21 2004-03-24 Matsushita Electric Industrial Co., Ltd. Multimedia optical disk, reproduction apparatus and method for achieving variable scene development based on interactive control
TW436777B (en) 1995-09-29 2001-05-28 Matsushita Electric Industrial Co Ltd A method and an apparatus for reproducing bitstream having non-sequential system clock data seamlessly therebetween
JP3824699B2 (ja) 1996-03-15 2006-09-20 パイオニア株式会社 情報記録媒体、その記録装置及び方法、その再生装置及び方法並びに情報処理装置及び方法
JP3437371B2 (ja) 1996-03-22 2003-08-18 パイオニア株式会社 情報記録装置及び情報再生装置
CN1449189B (zh) 1996-03-29 2010-04-21 松下电器产业株式会社 光盘的制造方法
US20020054049A1 (en) 1996-11-12 2002-05-09 Kenji Toyoda Image playback apparatus, image recording apparatus, and methods thereof
JP3618986B2 (ja) * 1996-12-13 2005-02-09 キヤノン株式会社 光起電力素子の製造方法
JPH09182013A (ja) 1996-12-19 1997-07-11 Casio Comput Co Ltd 電子スチルカメラ
EP1193707B1 (en) 1997-09-17 2006-05-24 Matsushita Electric Industrial Co., Ltd. Optical disc, recording apparatus, and computer-readable recording medium
JPH11136613A (ja) 1997-10-31 1999-05-21 Canon Inc 画像記録装置および方法
JP3597689B2 (ja) 1998-01-21 2004-12-08 株式会社東芝 情報記録媒体及び情報記録媒体処理装置
JP3389086B2 (ja) 1998-02-23 2003-03-24 株式会社東芝 光ディスクの記録方法と光ディスクと再生方法と再生装置
EP2261920A3 (en) 1998-02-23 2011-03-09 Kabushiki Kaisha Toshiba Information storage medium, information playback method and apparatus and information recording method
JP3356991B2 (ja) 1998-06-17 2002-12-16 株式会社日立製作所 光ディスク、記録方法、記録装置、再生方法及び再生装置
US6721493B1 (en) 1998-06-24 2004-04-13 Samsung Electronics Co., Ltd. Recording medium for storing information for still picture, recording and/or reproducing method and apparatus therefor
US6389222B1 (en) 1998-07-07 2002-05-14 Kabushiki Kaisha Toshiba Management system for protected and temporarily-erased still picture information
JP3383587B2 (ja) 1998-07-07 2003-03-04 株式会社東芝 静止画像連続情報記録方法と光ディスクと光ディスクの情報再生装置と情報再生方法
KR100326337B1 (ko) 1998-09-05 2002-09-12 엘지전자주식회사 재기록가능기록매체의데이터재생순서정보의생성기록방법
JP4045499B2 (ja) 2003-03-27 2008-02-13 信越半導体株式会社 ＺｎＯ系半導体素子の製造方法
JP2004315361A (ja) * 2003-04-03 2004-11-11 Tokyo Denpa Co Ltd 酸化亜鉛単結晶
JP4610870B2 (ja) * 2003-07-17 2011-01-12 独立行政法人物質・材料研究機構 酸化亜鉛単結晶ウエファーの製造法

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Publication number Publication date
US7288208B2 (en) 2007-10-30
JP2007001787A (ja) 2007-01-11
US20060283834A1 (en) 2006-12-21

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