JP2007001787A5 - - Google Patents

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Publication number
JP2007001787A5
JP2007001787A5 JP2005180990A JP2005180990A JP2007001787A5 JP 2007001787 A5 JP2007001787 A5 JP 2007001787A5 JP 2005180990 A JP2005180990 A JP 2005180990A JP 2005180990 A JP2005180990 A JP 2005180990A JP 2007001787 A5 JP2007001787 A5 JP 2007001787A5
Authority
JP
Japan
Prior art keywords
substrate
ethylenediamine
manufacturing
ethylenediaminetetraacetic acid
liquid mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005180990A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007001787A (ja
JP4610422B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005180990A priority Critical patent/JP4610422B2/ja
Priority claimed from JP2005180990A external-priority patent/JP4610422B2/ja
Priority to US11/392,863 priority patent/US7288208B2/en
Publication of JP2007001787A publication Critical patent/JP2007001787A/ja
Publication of JP2007001787A5 publication Critical patent/JP2007001787A5/ja
Application granted granted Critical
Publication of JP4610422B2 publication Critical patent/JP4610422B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005180990A 2005-06-21 2005-06-21 ZnO基板の製造方法 Expired - Fee Related JP4610422B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005180990A JP4610422B2 (ja) 2005-06-21 2005-06-21 ZnO基板の製造方法
US11/392,863 US7288208B2 (en) 2005-06-21 2006-03-29 Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005180990A JP4610422B2 (ja) 2005-06-21 2005-06-21 ZnO基板の製造方法

Publications (3)

Publication Number Publication Date
JP2007001787A JP2007001787A (ja) 2007-01-11
JP2007001787A5 true JP2007001787A5 (https=) 2008-07-24
JP4610422B2 JP4610422B2 (ja) 2011-01-12

Family

ID=37572344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005180990A Expired - Fee Related JP4610422B2 (ja) 2005-06-21 2005-06-21 ZnO基板の製造方法

Country Status (2)

Country Link
US (1) US7288208B2 (https=)
JP (1) JP4610422B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112006002133B4 (de) * 2005-08-09 2017-10-12 Stanley Electric Co. Ltd. ZnO-Kristall, sein Aufwuchsverfahren und ein Herstellungsverfahren für eine Leuchtvorrichtung
JP4953879B2 (ja) * 2007-03-29 2012-06-13 スタンレー電気株式会社 半導体装置とその製造方法、及びテンプレート基板
JP2009029688A (ja) * 2007-06-28 2009-02-12 Rohm Co Ltd ZnO系基板及びZnO系基板の処理方法
JP2010053017A (ja) 2008-04-04 2010-03-11 Fukuda Crystal Laboratory 酸化亜鉛単結晶およびその製造方法
JP5411681B2 (ja) * 2009-12-09 2014-02-12 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法
GB201010915D0 (en) 2010-06-28 2010-08-11 Uni I Oslo Process
JP5647881B2 (ja) * 2010-12-17 2015-01-07 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法
JP5654910B2 (ja) * 2011-03-14 2015-01-14 スタンレー電気株式会社 酸化亜鉛基板の処理方法
JP5647922B2 (ja) * 2011-03-16 2015-01-07 スタンレー電気株式会社 酸化亜鉛系基板の処理方法及び成長層付き基板

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JPH08106721A (ja) 1994-10-07 1996-04-23 Sony Corp 円盤状記録媒体の記録装置及び再生装置
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JP3437371B2 (ja) 1996-03-22 2003-08-18 パイオニア株式会社 情報記録装置及び情報再生装置
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JP3383587B2 (ja) 1998-07-07 2003-03-04 株式会社東芝 静止画像連続情報記録方法と光ディスクと光ディスクの情報再生装置と情報再生方法
KR100326337B1 (ko) 1998-09-05 2002-09-12 엘지전자주식회사 재기록가능기록매체의데이터재생순서정보의생성기록방법
JP4045499B2 (ja) 2003-03-27 2008-02-13 信越半導体株式会社 ZnO系半導体素子の製造方法
JP2004315361A (ja) * 2003-04-03 2004-11-11 Tokyo Denpa Co Ltd 酸化亜鉛単結晶
JP4610870B2 (ja) * 2003-07-17 2011-01-12 独立行政法人物質・材料研究機構 酸化亜鉛単結晶ウエファーの製造法

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