JP4551758B2 - 液浸露光方法および半導体装置の製造方法 - Google Patents

液浸露光方法および半導体装置の製造方法 Download PDF

Info

Publication number
JP4551758B2
JP4551758B2 JP2004378299A JP2004378299A JP4551758B2 JP 4551758 B2 JP4551758 B2 JP 4551758B2 JP 2004378299 A JP2004378299 A JP 2004378299A JP 2004378299 A JP2004378299 A JP 2004378299A JP 4551758 B2 JP4551758 B2 JP 4551758B2
Authority
JP
Japan
Prior art keywords
wafer
substrate
liquid
film
immersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004378299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006186112A5 (enExample
JP2006186112A (ja
Inventor
健太郎 松永
信一 伊藤
拓也 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004378299A priority Critical patent/JP4551758B2/ja
Priority to TW094143393A priority patent/TWI290339B/zh
Priority to US11/315,000 priority patent/US7423728B2/en
Priority to KR1020050129525A priority patent/KR100753270B1/ko
Publication of JP2006186112A publication Critical patent/JP2006186112A/ja
Publication of JP2006186112A5 publication Critical patent/JP2006186112A5/ja
Application granted granted Critical
Publication of JP4551758B2 publication Critical patent/JP4551758B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2004378299A 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法 Expired - Fee Related JP4551758B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004378299A JP4551758B2 (ja) 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法
TW094143393A TWI290339B (en) 2004-12-27 2005-12-08 Liquid immersion exposure method, liquid immersion type exposure device, and manufacturing method of semiconductor
US11/315,000 US7423728B2 (en) 2004-12-27 2005-12-23 Immersion exposure method and apparatus, and manufacturing method of a semiconductor device
KR1020050129525A KR100753270B1 (ko) 2004-12-27 2005-12-26 액침 노광 방법, 액침형 노광 장치, 및 반도체 장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004378299A JP4551758B2 (ja) 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006186112A JP2006186112A (ja) 2006-07-13
JP2006186112A5 JP2006186112A5 (enExample) 2010-02-25
JP4551758B2 true JP4551758B2 (ja) 2010-09-29

Family

ID=36739007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004378299A Expired - Fee Related JP4551758B2 (ja) 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US7423728B2 (enExample)
JP (1) JP4551758B2 (enExample)
KR (1) KR100753270B1 (enExample)
TW (1) TWI290339B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101036114B1 (ko) * 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
JP4696558B2 (ja) * 2005-01-07 2011-06-08 Ｊｓｒ株式会社 フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
EP1843387A4 (en) * 2005-01-25 2010-01-13 Jsr Corp IMMERSION EXPOSURE SYSTEM, RECYCLING METHOD, AND LIQUID DELIVERY METHOD FOR IMMERSION EXPOSURE
WO2006137410A1 (ja) * 2005-06-21 2006-12-28 Nikon Corporation 露光装置及び露光方法、メンテナンス方法、並びにデバイス製造方法
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007194503A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 基板処理方法および基板処理装置
JP4830523B2 (ja) 2006-02-08 2011-12-07 東京エレクトロン株式会社 塗布、現像装置、塗布、現像方法及びその方法を実施するためのコンピュータプログラム。
EP2018597A1 (en) * 2006-05-17 2009-01-28 Micronic Laser Systems Ab Process for immersion exposure of a substrate
JP4368365B2 (ja) 2006-08-02 2009-11-18 Ｔｄｋ株式会社 液浸露光用基板およびその製造方法、ならびに液浸露光方法
JP4772620B2 (ja) * 2006-08-11 2011-09-14 東京エレクトロン株式会社 液浸露光用塗布膜の処理条件決定方法および処理条件決定装置
JP2008060302A (ja) * 2006-08-31 2008-03-13 Sokudo:Kk 基板処理装置
WO2008029884A1 (en) * 2006-09-08 2008-03-13 Nikon Corporation Cleaning member, cleaning method and device manufacturing method
JP4813333B2 (ja) 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
US20080198346A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Exposure apparatus and method for manufacturing device
US20080241489A1 (en) * 2007-03-30 2008-10-02 Renesas Technology Corp. Method of forming resist pattern and semiconductor device manufactured with the same
US8435593B2 (en) * 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
US20090009733A1 (en) * 2007-07-06 2009-01-08 Canon Kabushiki Kaisha Exposure apparatus
KR100871749B1 (ko) * 2007-07-20 2008-12-05 주식회사 동부하이텍 이머전 리소그라피 장치 및 이를 이용한 패턴 형성 방법
JP2009117832A (ja) 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2009260264A (ja) * 2008-03-24 2009-11-05 Canon Inc 露光装置およびデバイス製造方法
NL2003362A (en) * 2008-10-16 2010-04-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
US8760630B2 (en) 2011-01-01 2014-06-24 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device
CN103987664B (zh) 2011-12-06 2017-03-08 德尔塔阀门公司 龙头中的臭氧分配
WO2014021235A1 (ja) * 2012-07-31 2014-02-06 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
CN115093008B (zh) 2015-12-21 2024-05-14 德尔塔阀门公司 包括消毒装置的流体输送系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
DE10332112A1 (de) 2003-07-09 2005-01-27 Carl Zeiss Smt Ag Projektionsbelichtungsverfahren und Projektionsbelichtungssystem
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
KR101036114B1 (ko) * 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
JP4604452B2 (ja) * 2003-02-26 2011-01-05 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
JP3993549B2 (ja) 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
JP4513590B2 (ja) * 2004-02-19 2010-07-28 株式会社ニコン 光学部品及び露光装置
JP4622340B2 (ja) * 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP2005302880A (ja) * 2004-04-08 2005-10-27 Canon Inc 液浸式露光装置
JP4677987B2 (ja) * 2004-07-21 2011-04-27 株式会社ニコン 露光方法及びデバイス製造方法

Also Published As

Publication number Publication date
TW200633010A (en) 2006-09-16
US20060177776A1 (en) 2006-08-10
US7423728B2 (en) 2008-09-09
JP2006186112A (ja) 2006-07-13
TWI290339B (en) 2007-11-21
KR100753270B1 (ko) 2007-08-29
KR20060074857A (ko) 2006-07-03

Similar Documents

Publication Publication Date Title
JP4551758B2 (ja) 液浸露光方法および半導体装置の製造方法
TWI387034B (zh) 基板處理裝置及基板處理方法
JP2006186112A5 (enExample)
US8084194B2 (en) Substrate edge treatment for coater/developer
JP4634822B2 (ja) レジストパターン形成方法および半導体装置の製造方法
US7796237B2 (en) Lithography apparatus, method of forming pattern and method of manufacturing semiconductor device
JP2008198820A (ja) 基板処理方法及び基板処理装置
TW200900869A (en) Exposure apparatus and method of manufacturing device
KR20090004613A (ko) 노광장치 및 방법
TWI438565B (zh) Substrate processing method, manufacturing method of EUV mask and EUV mask
US11467484B2 (en) Method for inspecting a reticle, a method for manufacturing a reticle, and a method for manufacturing a semiconductor device using the same
JP2003243295A (ja) 基板処理装置
JP2010040748A (ja) 液浸露光方法および液浸露光装置
CN101320221B (zh) 浸没式光刻系统以及浸没式光刻中原地清洁透镜的方法
US8148054B2 (en) Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns
JP2008091424A (ja) 液浸露光方法
JP2006119292A (ja) レジストパターン形成方法
JP4922858B2 (ja) パターン形成方法及び洗浄装置
TWI820469B (zh) 倍縮光罩之表面的處理方法及半導體製造系統
JP4872448B2 (ja) 塗布、現像装置、塗布、現像方法及び記憶媒体。
JP2009099671A (ja) 塗布装置およびそれを用いた半導体装置の製造方法
US8817226B2 (en) Systems and methods for insitu lens cleaning using ozone in immersion lithography
JP2006317774A (ja) パターン形成方法
JP2009212132A (ja) 基板、基板の処理方法及び処理装置、基板の処理システム、露光方法及び露光装置、並びにデバイス製造方法
KR100640945B1 (ko) 반도체 제조용 노광 장치 및 방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100106

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100212

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100223

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100511

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100527

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100615

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100712

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130716

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees