JP2006186112A5 - - Google Patents

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Publication number
JP2006186112A5
JP2006186112A5 JP2004378299A JP2004378299A JP2006186112A5 JP 2006186112 A5 JP2006186112 A5 JP 2006186112A5 JP 2004378299 A JP2004378299 A JP 2004378299A JP 2004378299 A JP2004378299 A JP 2004378299A JP 2006186112 A5 JP2006186112 A5 JP 2006186112A5
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JP
Japan
Prior art keywords
substrate
liquid
processed
exposure
immersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004378299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006186112A (ja
JP4551758B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004378299A priority Critical patent/JP4551758B2/ja
Priority claimed from JP2004378299A external-priority patent/JP4551758B2/ja
Priority to TW094143393A priority patent/TWI290339B/zh
Priority to US11/315,000 priority patent/US7423728B2/en
Priority to KR1020050129525A priority patent/KR100753270B1/ko
Publication of JP2006186112A publication Critical patent/JP2006186112A/ja
Publication of JP2006186112A5 publication Critical patent/JP2006186112A5/ja
Application granted granted Critical
Publication of JP4551758B2 publication Critical patent/JP4551758B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004378299A 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法 Expired - Fee Related JP4551758B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004378299A JP4551758B2 (ja) 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法
TW094143393A TWI290339B (en) 2004-12-27 2005-12-08 Liquid immersion exposure method, liquid immersion type exposure device, and manufacturing method of semiconductor
US11/315,000 US7423728B2 (en) 2004-12-27 2005-12-23 Immersion exposure method and apparatus, and manufacturing method of a semiconductor device
KR1020050129525A KR100753270B1 (ko) 2004-12-27 2005-12-26 액침 노광 방법, 액침형 노광 장치, 및 반도체 장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004378299A JP4551758B2 (ja) 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006186112A JP2006186112A (ja) 2006-07-13
JP2006186112A5 true JP2006186112A5 (enExample) 2010-02-25
JP4551758B2 JP4551758B2 (ja) 2010-09-29

Family

ID=36739007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004378299A Expired - Fee Related JP4551758B2 (ja) 2004-12-27 2004-12-27 液浸露光方法および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US7423728B2 (enExample)
JP (1) JP4551758B2 (enExample)
KR (1) KR100753270B1 (enExample)
TW (1) TWI290339B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP4696558B2 (ja) * 2005-01-07 2011-06-08 Ｊｓｒ株式会社 フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
KR20070095399A (ko) * 2005-01-25 2007-09-28 제이에스알 가부시끼가이샤 액침형 노광 시스템, 액침형 노광용 액체의 리사이클 방법및 공급 방법
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
EP1895571A4 (en) * 2005-06-21 2011-04-27 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD
JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007194503A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 基板処理方法および基板処理装置
JP4830523B2 (ja) 2006-02-08 2011-12-07 東京エレクトロン株式会社 塗布、現像装置、塗布、現像方法及びその方法を実施するためのコンピュータプログラム。
WO2007131792A1 (en) * 2006-05-17 2007-11-22 Micronic Laser Systems Ab Process for immersion exposure of a substrate
JP4368365B2 (ja) 2006-08-02 2009-11-18 Ｔｄｋ株式会社 液浸露光用基板およびその製造方法、ならびに液浸露光方法
JP4772620B2 (ja) * 2006-08-11 2011-09-14 東京エレクトロン株式会社 液浸露光用塗布膜の処理条件決定方法および処理条件決定装置
JP2008060302A (ja) * 2006-08-31 2008-03-13 Sokudo:Kk 基板処理装置
JP5029611B2 (ja) * 2006-09-08 2012-09-19 株式会社ニコン クリーニング用部材、クリーニング方法、露光装置、並びにデバイス製造方法
JP4813333B2 (ja) 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
US20080198346A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Exposure apparatus and method for manufacturing device
US20080241489A1 (en) * 2007-03-30 2008-10-02 Renesas Technology Corp. Method of forming resist pattern and semiconductor device manufactured with the same
US8435593B2 (en) * 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
US20090009733A1 (en) * 2007-07-06 2009-01-08 Canon Kabushiki Kaisha Exposure apparatus
KR100871749B1 (ko) * 2007-07-20 2008-12-05 주식회사 동부하이텍 이머전 리소그라피 장치 및 이를 이용한 패턴 형성 방법
JP2009117832A (ja) 2007-11-06 2009-05-28 Asml Netherlands Bv リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2009260264A (ja) * 2008-03-24 2009-11-05 Canon Inc 露光装置およびデバイス製造方法
NL2003362A (en) * 2008-10-16 2010-04-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2010135428A (ja) * 2008-12-02 2010-06-17 Toshiba Corp 基板保持部材及び半導体装置の製造方法
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
US8760630B2 (en) 2011-01-01 2014-06-24 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
US9377679B2 (en) * 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
CN108463437B (zh) 2015-12-21 2022-07-08 德尔塔阀门公司 包括消毒装置的流体输送系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
DE10332112A1 (de) 2003-07-09 2005-01-27 Carl Zeiss Smt Ag Projektionsbelichtungsverfahren und Projektionsbelichtungssystem
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
JP4604452B2 (ja) * 2003-02-26 2011-01-05 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
KR101242815B1 (ko) * 2003-06-13 2013-03-12 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조방법
JP3993549B2 (ja) 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
US7528929B2 (en) * 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4513590B2 (ja) * 2004-02-19 2010-07-28 株式会社ニコン 光学部品及び露光装置
JP4622340B2 (ja) * 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP2005302880A (ja) * 2004-04-08 2005-10-27 Canon Inc 液浸式露光装置
EP1783823A4 (en) * 2004-07-21 2009-07-22 Nikon Corp EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS

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