TWI290339B - Liquid immersion exposure method, liquid immersion type exposure device, and manufacturing method of semiconductor - Google Patents
Liquid immersion exposure method, liquid immersion type exposure device, and manufacturing method of semiconductor Download PDFInfo
- Publication number
- TWI290339B TWI290339B TW094143393A TW94143393A TWI290339B TW I290339 B TWI290339 B TW I290339B TW 094143393 A TW094143393 A TW 094143393A TW 94143393 A TW94143393 A TW 94143393A TW I290339 B TWI290339 B TW I290339B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- exposure
- substrate
- film
- wafer
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 334
- 238000007654 immersion Methods 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 100
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 144
- 230000008569 process Effects 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 97
- 230000001681 protective effect Effects 0.000 claims description 87
- 229920002120 photoresistant polymer Polymers 0.000 claims description 59
- 238000012545 processing Methods 0.000 claims description 37
- 238000010521 absorption reaction Methods 0.000 claims description 20
- 230000007246 mechanism Effects 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 13
- 230000002940 repellent Effects 0.000 claims description 9
- 239000005871 repellent Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- 238000011084 recovery Methods 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 150000001785 cerium compounds Chemical class 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- -1 hydrazine compound Chemical class 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 abstract description 100
- 235000012431 wafers Nutrition 0.000 description 250
- 239000000428 dust Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 15
- 239000000047 product Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- 230000002950 deficient Effects 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004378299A JP4551758B2 (ja) | 2004-12-27 | 2004-12-27 | 液浸露光方法および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200633010A TW200633010A (en) | 2006-09-16 |
| TWI290339B true TWI290339B (en) | 2007-11-21 |
Family
ID=36739007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094143393A TWI290339B (en) | 2004-12-27 | 2005-12-08 | Liquid immersion exposure method, liquid immersion type exposure device, and manufacturing method of semiconductor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7423728B2 (enExample) |
| JP (1) | JP4551758B2 (enExample) |
| KR (1) | KR100753270B1 (enExample) |
| TW (1) | TWI290339B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI566032B (zh) * | 2012-07-31 | 2017-01-11 | Hoya Corp | Reflective blank cover body and manufacturing method thereof, manufacturing method of reflection type cover body, and manufacturing method of semiconductor device |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| JP4696558B2 (ja) * | 2005-01-07 | 2011-06-08 | Ｊｓｒ株式会社 | フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板 |
| EP1843387A4 (en) * | 2005-01-25 | 2010-01-13 | Jsr Corp | IMMERSION EXPOSURE SYSTEM, RECYCLING METHOD, AND LIQUID DELIVERY METHOD FOR IMMERSION EXPOSURE |
| WO2006137410A1 (ja) * | 2005-06-21 | 2006-12-28 | Nikon Corporation | 露光装置及び露光方法、メンテナンス方法、並びにデバイス製造方法 |
| US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
| JP2007142181A (ja) * | 2005-11-18 | 2007-06-07 | Toshiba Corp | 基板処理方法及びリンス装置 |
| JP2007194503A (ja) * | 2006-01-20 | 2007-08-02 | Toshiba Corp | 基板処理方法および基板処理装置 |
| JP4830523B2 (ja) | 2006-02-08 | 2011-12-07 | 東京エレクトロン株式会社 | 塗布、現像装置、塗布、現像方法及びその方法を実施するためのコンピュータプログラム。 |
| EP2018597A1 (en) * | 2006-05-17 | 2009-01-28 | Micronic Laser Systems Ab | Process for immersion exposure of a substrate |
| JP4368365B2 (ja) | 2006-08-02 | 2009-11-18 | Ｔｄｋ株式会社 | 液浸露光用基板およびその製造方法、ならびに液浸露光方法 |
| JP4772620B2 (ja) * | 2006-08-11 | 2011-09-14 | 東京エレクトロン株式会社 | 液浸露光用塗布膜の処理条件決定方法および処理条件決定装置 |
| JP2008060302A (ja) * | 2006-08-31 | 2008-03-13 | Sokudo:Kk | 基板処理装置 |
| WO2008029884A1 (en) * | 2006-09-08 | 2008-03-13 | Nikon Corporation | Cleaning member, cleaning method and device manufacturing method |
| JP4813333B2 (ja) | 2006-11-21 | 2011-11-09 | 東京エレクトロン株式会社 | 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体 |
| US20080198346A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Exposure apparatus and method for manufacturing device |
| US20080241489A1 (en) * | 2007-03-30 | 2008-10-02 | Renesas Technology Corp. | Method of forming resist pattern and semiconductor device manufactured with the same |
| US8435593B2 (en) * | 2007-05-22 | 2013-05-07 | Asml Netherlands B.V. | Method of inspecting a substrate and method of preparing a substrate for lithography |
| US20090009733A1 (en) * | 2007-07-06 | 2009-01-08 | Canon Kabushiki Kaisha | Exposure apparatus |
| KR100871749B1 (ko) * | 2007-07-20 | 2008-12-05 | 주식회사 동부하이텍 | 이머전 리소그라피 장치 및 이를 이용한 패턴 형성 방법 |
| JP2009117832A (ja) | 2007-11-06 | 2009-05-28 | Asml Netherlands Bv | リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置 |
| NL1036186A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP2009260264A (ja) * | 2008-03-24 | 2009-11-05 | Canon Inc | 露光装置およびデバイス製造方法 |
| NL2003362A (en) * | 2008-10-16 | 2010-04-19 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP2010135428A (ja) * | 2008-12-02 | 2010-06-17 | Toshiba Corp | 基板保持部材及び半導体装置の製造方法 |
| JP2010140958A (ja) * | 2008-12-09 | 2010-06-24 | Canon Inc | 露光装置及びデバイス製造方法 |
| US8760630B2 (en) | 2011-01-01 | 2014-06-24 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing device |
| CN103987664B (zh) | 2011-12-06 | 2017-03-08 | 德尔塔阀门公司 | 龙头中的臭氧分配 |
| CN115093008B (zh) | 2015-12-21 | 2024-05-14 | 德尔塔阀门公司 | 包括消毒装置的流体输送系统 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| DE10332112A1 (de) | 2003-07-09 | 2005-01-27 | Carl Zeiss Smt Ag | Projektionsbelichtungsverfahren und Projektionsbelichtungssystem |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP4595320B2 (ja) * | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
| KR101036114B1 (ko) * | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| KR101520591B1 (ko) * | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| JP3993549B2 (ja) | 2003-09-30 | 2007-10-17 | 株式会社東芝 | レジストパターン形成方法 |
| JP4295712B2 (ja) * | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び装置製造方法 |
| JP4513590B2 (ja) * | 2004-02-19 | 2010-07-28 | 株式会社ニコン | 光学部品及び露光装置 |
| JP4622340B2 (ja) * | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
| JP4220423B2 (ja) | 2004-03-24 | 2009-02-04 | 株式会社東芝 | レジストパターン形成方法 |
| JP2005302880A (ja) * | 2004-04-08 | 2005-10-27 | Canon Inc | 液浸式露光装置 |
| JP4677987B2 (ja) * | 2004-07-21 | 2011-04-27 | 株式会社ニコン | 露光方法及びデバイス製造方法 |
-
2004
- 2004-12-27 JP JP2004378299A patent/JP4551758B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-08 TW TW094143393A patent/TWI290339B/zh active
- 2005-12-23 US US11/315,000 patent/US7423728B2/en active Active
- 2005-12-26 KR KR1020050129525A patent/KR100753270B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI566032B (zh) * | 2012-07-31 | 2017-01-11 | Hoya Corp | Reflective blank cover body and manufacturing method thereof, manufacturing method of reflection type cover body, and manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200633010A (en) | 2006-09-16 |
| US20060177776A1 (en) | 2006-08-10 |
| US7423728B2 (en) | 2008-09-09 |
| JP2006186112A (ja) | 2006-07-13 |
| JP4551758B2 (ja) | 2010-09-29 |
| KR100753270B1 (ko) | 2007-08-29 |
| KR20060074857A (ko) | 2006-07-03 |
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