JP4447280B2 - 表面保護用シートおよび半導体ウエハの研削方法 - Google Patents
表面保護用シートおよび半導体ウエハの研削方法 Download PDFInfo
- Publication number
- JP4447280B2 JP4447280B2 JP2003356280A JP2003356280A JP4447280B2 JP 4447280 B2 JP4447280 B2 JP 4447280B2 JP 2003356280 A JP2003356280 A JP 2003356280A JP 2003356280 A JP2003356280 A JP 2003356280A JP 4447280 B2 JP4447280 B2 JP 4447280B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- pressure
- sensitive adhesive
- semiconductor wafer
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/204—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive coating being discontinuous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003356280A JP4447280B2 (ja) | 2003-10-16 | 2003-10-16 | 表面保護用シートおよび半導体ウエハの研削方法 |
| PCT/JP2004/015131 WO2005038894A1 (ja) | 2003-10-16 | 2004-10-14 | 表面保護用シートおよび半導体ウエハの研削方法 |
| US10/575,510 US7438631B2 (en) | 2003-10-16 | 2004-10-14 | Surface-protecting sheet and semiconductor wafer lapping method |
| EP04792363A EP1681713A4 (en) | 2003-10-16 | 2004-10-14 | SURFACE PROTECTION FILM AND SEMICONDUCTOR WAFER LAPPING METHOD |
| KR1020067009385A KR20060120113A (ko) | 2003-10-16 | 2004-10-14 | 표면보호용 시트 및 반도체 웨이퍼의 연삭방법 |
| CNA2004800302222A CN1868040A (zh) | 2003-10-16 | 2004-10-14 | 表面保护用板以及半导体晶片的磨削方法 |
| TW093131308A TWI349315B (en) | 2003-10-16 | 2004-10-15 | Surface protecting sheet and method of grinding semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003356280A JP4447280B2 (ja) | 2003-10-16 | 2003-10-16 | 表面保護用シートおよび半導体ウエハの研削方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005123382A JP2005123382A (ja) | 2005-05-12 |
| JP2005123382A5 JP2005123382A5 (cg-RX-API-DMAC7.html) | 2006-09-28 |
| JP4447280B2 true JP4447280B2 (ja) | 2010-04-07 |
Family
ID=34463200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003356280A Expired - Lifetime JP4447280B2 (ja) | 2003-10-16 | 2003-10-16 | 表面保護用シートおよび半導体ウエハの研削方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7438631B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1681713A4 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4447280B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20060120113A (cg-RX-API-DMAC7.html) |
| CN (1) | CN1868040A (cg-RX-API-DMAC7.html) |
| TW (1) | TWI349315B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2005038894A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4647228B2 (ja) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | ウェーハの加工方法 |
| DE102004018249B3 (de) * | 2004-04-15 | 2006-03-16 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Werkstücks an einem Werkstückträger |
| JP5063026B2 (ja) * | 2005-05-10 | 2012-10-31 | リンテック株式会社 | 半導体ウエハ加工用シートおよび半導体ウエハの加工方法 |
| JP4808458B2 (ja) * | 2005-09-28 | 2011-11-02 | 株式会社ディスコ | ウェハ加工方法 |
| JP4749849B2 (ja) * | 2005-11-28 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
| JP4749851B2 (ja) * | 2005-11-29 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
| DE102006000687B4 (de) | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
| JP4836827B2 (ja) * | 2007-02-22 | 2011-12-14 | 日東電工株式会社 | 粘着テープ貼付け装置 |
| SG147330A1 (en) * | 2007-04-19 | 2008-11-28 | Micron Technology Inc | Semiconductor workpiece carriers and methods for processing semiconductor workpieces |
| JP5379377B2 (ja) * | 2007-12-10 | 2013-12-25 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
| KR101096142B1 (ko) | 2008-01-24 | 2011-12-19 | 브레우어 사이언스 인코포레이션 | 캐리어 기판에 디바이스 웨이퍼를 가역적으로 장착하는 방법 |
| JP5197037B2 (ja) * | 2008-01-30 | 2013-05-15 | 株式会社東京精密 | バンプが形成されたウェーハを処理するウェーハ処理方法 |
| JP5361200B2 (ja) * | 2008-01-30 | 2013-12-04 | 株式会社東京精密 | バンプが形成されたウェーハを処理するウェーハ処理方法 |
| JP5399648B2 (ja) * | 2008-03-31 | 2014-01-29 | リンテック株式会社 | 接着シート及びこれを用いた半導体ウエハの処理方法 |
| JP2010027686A (ja) * | 2008-07-15 | 2010-02-04 | Lintec Corp | 表面保護用シートおよび半導体ウエハの研削方法 |
| EP2660851B1 (de) | 2009-03-18 | 2020-10-14 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger |
| EP2706562A3 (de) | 2009-09-01 | 2014-09-03 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Halbleiterwafers von einem Trägersubstrat mittels Kippens eines Filmrahmens |
| EP2523209B1 (de) | 2010-04-23 | 2017-03-08 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat |
| US8852391B2 (en) | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
| US9263314B2 (en) * | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
| JP5586093B2 (ja) * | 2010-09-09 | 2014-09-10 | リンテック株式会社 | シート貼付装置及び貼付方法 |
| JP5572045B2 (ja) * | 2010-09-09 | 2014-08-13 | リンテック株式会社 | シート貼付装置及び貼付方法 |
| JP2012074659A (ja) * | 2010-09-30 | 2012-04-12 | Disco Abrasive Syst Ltd | 研削方法 |
| JP5282113B2 (ja) | 2011-03-22 | 2013-09-04 | リンテック株式会社 | 基材フィルムおよび該基材フィルムを備えた粘着シート |
| JP5762781B2 (ja) | 2011-03-22 | 2015-08-12 | リンテック株式会社 | 基材フィルムおよび該基材フィルムを備えた粘着シート |
| US9390968B2 (en) * | 2011-09-29 | 2016-07-12 | Intel Corporation | Low temperature thin wafer backside vacuum process with backgrinding tape |
| CN107275404A (zh) | 2011-09-30 | 2017-10-20 | 英特尔公司 | 用于非平坦晶体管的钨栅极 |
| EP2761664A4 (en) | 2011-09-30 | 2015-06-17 | Intel Corp | CLOSING DIELECTRIC STRUCTURES FOR TRANSISTOR GATES |
| US9637810B2 (en) | 2011-09-30 | 2017-05-02 | Intel Corporation | Tungsten gates for non-planar transistors |
| CN103918083A (zh) | 2011-10-01 | 2014-07-09 | 英特尔公司 | 非平面晶体管的源极/漏极触点 |
| US20130334713A1 (en) * | 2011-12-22 | 2013-12-19 | Dingying D. Xu | Electrostatic discharge compliant patterned adhesive tape |
| DE102012101237A1 (de) * | 2012-02-16 | 2013-08-22 | Ev Group E. Thallner Gmbh | Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat |
| JP5591859B2 (ja) * | 2012-03-23 | 2014-09-17 | 株式会社東芝 | 基板の分離方法及び分離装置 |
| JP5997477B2 (ja) * | 2012-03-30 | 2016-09-28 | リンテック株式会社 | 表面保護用シート |
| JP2013235910A (ja) * | 2012-05-08 | 2013-11-21 | Disco Abrasive Syst Ltd | 保護部材 |
| JP2013235911A (ja) * | 2012-05-08 | 2013-11-21 | Disco Abrasive Syst Ltd | 保護部材 |
| JP2013243195A (ja) * | 2012-05-18 | 2013-12-05 | Disco Abrasive Syst Ltd | 保護テープ |
| JP2013243286A (ja) * | 2012-05-22 | 2013-12-05 | Disco Abrasive Syst Ltd | 粘着テープ |
| JP6045817B2 (ja) * | 2012-05-28 | 2016-12-14 | 株式会社ディスコ | 貼着方法 |
| JP6061590B2 (ja) * | 2012-09-27 | 2017-01-18 | 株式会社ディスコ | 表面保護部材および加工方法 |
| TWI500090B (zh) * | 2012-11-13 | 2015-09-11 | 矽品精密工業股份有限公司 | 半導體封裝件之製法 |
| CN102962762A (zh) * | 2012-12-07 | 2013-03-13 | 日月光半导体制造股份有限公司 | 晶圆研磨用承载盘组件 |
| US9335367B2 (en) | 2013-08-27 | 2016-05-10 | International Business Machines Corporation | Implementing low temperature wafer test |
| JP6230354B2 (ja) * | 2013-09-26 | 2017-11-15 | 株式会社ディスコ | デバイスウェーハの加工方法 |
| US9539699B2 (en) * | 2014-08-28 | 2017-01-10 | Ebara Corporation | Polishing method |
| CN106794684B (zh) * | 2014-10-20 | 2020-09-01 | 琳得科株式会社 | 表面保护片用基材及表面保护片 |
| WO2016076414A1 (ja) * | 2014-11-14 | 2016-05-19 | 東レエンジニアリング株式会社 | 半導体チップ実装方法および半導体チップ実装用保護シート |
| JP6590164B2 (ja) * | 2014-12-29 | 2019-10-16 | 株式会社ディスコ | 半導体サイズのウェーハの処理に使用するための保護シート、保護シート構成、ハンドリングシステムおよび半導体サイズのウェーハの処理方法 |
| WO2016181741A1 (ja) * | 2015-05-13 | 2016-11-17 | リンテック株式会社 | 表面保護フィルム |
| KR101676025B1 (ko) | 2016-06-30 | 2016-11-15 | (주) 화인테크놀리지 | 반도체 웨이퍼의 하프커팅 후 이면 연삭 가공용 자외선 경화형 점착시트 |
| US10096460B2 (en) | 2016-08-02 | 2018-10-09 | Semiconductor Components Industries, Llc | Semiconductor wafer and method of wafer thinning using grinding phase and separation phase |
| JP6850099B2 (ja) * | 2016-09-23 | 2021-03-31 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法及び半導体製造装置 |
| KR102266340B1 (ko) * | 2016-10-27 | 2021-06-16 | 미쓰이 가가쿠 토세로 가부시키가이샤 | 전자 장치의 제조 방법, 전자 장치 제조용 점착성 필름 및 전자 부품 시험 장치 |
| JP6940217B2 (ja) | 2017-05-18 | 2021-09-22 | 株式会社ディスコ | ウェハ処理に使用する為の保護シーティング、ウェハ、ウェハ及び保護シーティングの組合せの取扱いシステム |
| JP2019212803A (ja) * | 2018-06-06 | 2019-12-12 | 信越ポリマー株式会社 | ウェーハ用スペーサ |
| JP2020035918A (ja) * | 2018-08-30 | 2020-03-05 | 株式会社ディスコ | 被加工物の加工方法 |
| US12103288B2 (en) * | 2019-03-27 | 2024-10-01 | Mitsui Chemicals Tohcello, Inc. | Affixing device |
| JP7451028B2 (ja) | 2019-12-27 | 2024-03-18 | 株式会社ディスコ | 保護シートの配設方法 |
| JP7455470B2 (ja) * | 2020-03-13 | 2024-03-26 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7582798B2 (ja) * | 2020-06-09 | 2024-11-13 | 株式会社東京精密 | 加工装置及び方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0228924A (ja) * | 1988-07-19 | 1990-01-31 | Oki Electric Ind Co Ltd | 半導体装置の製造方法およびそれに用いる保護具 |
| JPH0562950A (ja) * | 1991-08-29 | 1993-03-12 | Nitto Denko Corp | 半導体ウエハへの保護テープ貼り付けおよび剥離方法 |
| JP2000071170A (ja) * | 1998-08-28 | 2000-03-07 | Nitta Ind Corp | 研磨用ウエハ保持部材及びそのウエハ保持部材の研磨機定盤への脱着方法 |
| US6688948B2 (en) * | 1999-07-07 | 2004-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer surface protection method |
| JP2001196404A (ja) * | 2000-01-11 | 2001-07-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP3768069B2 (ja) | 2000-05-16 | 2006-04-19 | 信越半導体株式会社 | 半導体ウエーハの薄型化方法 |
| US7059942B2 (en) * | 2000-09-27 | 2006-06-13 | Strasbaugh | Method of backgrinding wafers while leaving backgrinding tape on a chuck |
| JP2003051473A (ja) | 2001-08-03 | 2003-02-21 | Disco Abrasive Syst Ltd | 半導体ウェーハの裏面研削方法 |
| SG120887A1 (en) * | 2001-12-03 | 2006-04-26 | Disco Corp | Method of processing a semiconductor wafer and substrate for semiconductor wafers used in the same |
| JP2004079951A (ja) * | 2002-08-22 | 2004-03-11 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP2004288725A (ja) | 2003-03-19 | 2004-10-14 | Citizen Watch Co Ltd | 半導体装置の製造方法,この製造方法に用いるシール部材及びこのシール部材の供給装置 |
| US7135124B2 (en) * | 2003-11-13 | 2006-11-14 | International Business Machines Corporation | Method for thinning wafers that have contact bumps |
-
2003
- 2003-10-16 JP JP2003356280A patent/JP4447280B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-14 WO PCT/JP2004/015131 patent/WO2005038894A1/ja not_active Ceased
- 2004-10-14 KR KR1020067009385A patent/KR20060120113A/ko not_active Withdrawn
- 2004-10-14 CN CNA2004800302222A patent/CN1868040A/zh active Pending
- 2004-10-14 EP EP04792363A patent/EP1681713A4/en not_active Withdrawn
- 2004-10-14 US US10/575,510 patent/US7438631B2/en not_active Expired - Lifetime
- 2004-10-15 TW TW093131308A patent/TWI349315B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI349315B (en) | 2011-09-21 |
| WO2005038894A1 (ja) | 2005-04-28 |
| US20070066184A1 (en) | 2007-03-22 |
| US7438631B2 (en) | 2008-10-21 |
| KR20060120113A (ko) | 2006-11-24 |
| EP1681713A4 (en) | 2007-10-10 |
| JP2005123382A (ja) | 2005-05-12 |
| TW200524057A (en) | 2005-07-16 |
| CN1868040A (zh) | 2006-11-22 |
| EP1681713A1 (en) | 2006-07-19 |
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