JP6940217B2 - ウェハ処理に使用する為の保護シーティング、ウェハ、ウェハ及び保護シーティングの組合せの取扱いシステム - Google Patents
ウェハ処理に使用する為の保護シーティング、ウェハ、ウェハ及び保護シーティングの組合せの取扱いシステム Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (13)
- 半導体サイズのウェハ(W)処理に使用する為の保護シーティング(10,110,210,310,410)において、前記保護シーティング(10,110,210,310,410)は、
保護フィルム(4)と、
前記保護フィルム(4)の裏の面(4b)に付けられるクッション層(8)と、
を備え、
前記保護シーティング(10,110,210,310,410)の少なくとも中央領域において、前記保護シーティング(10,110,210,310,410)の表の面(4a)および裏の面(8b、8b、9b)には接着材が加えられず、前記中央領域の外径は、前記半導体サイズのウェハ(W)の外径に等しい又は前記ウェハ(W)の外径より大きい、保護シーティング(10,110,210,310,410)。 - 前記中央領域の前記外径は、3〜50cmの範囲である、請求項1に記載の保護シーティング(10,110,210,310,410)。
- 前記保護シーティング(10,110,210,310,410)の全体の前記表の面(4a)および/または全体の前記裏の面(8b、9b)に接着材が加えられていない、請求項1または2に記載の保護シーティング(10,110,210,310,410)。
- 略環状接着層(42)が、前記保護フィルム(4)の前記裏の面(4b)の反対側にある表の面(4a)の外周部分に加えられる、請求項1または2に記載の保護シーティング(10,110,210,310,410)。
- 前記略環状接着層(42)の内径は、前記半導体サイズのウェハ(W)を保持する為の半導体サイズの環状フレーム(40)の内径に等しい又は前記環状フレーム(40)の内径より大きい、請求項4に記載の保護シーティング(10,110,210,310,410)。
- ウェハ(W)の処理に使用する為の保護シーティング(10,310,410)において、前記保護シーティング(10,310,410)は、
保護フィルム(4)と、
前記保護フィルム(4)の裏の面(4b)に付けられるクッション層(8)と、
を備え、
前記保護シーティング(10,310,410)の全体の表の面(4a)および全体の裏の面(8b、9b)には接着材が加えられていない、保護シーティング(10,310,410)。 - 前記クッション層(8)は、UV線、熱、電界および/または硬く剤のような外部刺激によって硬化可能である、請求項1〜6のいずれか一項に記載の保護シーティング(10,110,210,310,410)。
- 前記クッション層(8)は、20〜500μmの範囲の厚さを有する、請求項1〜7のいずれか一項に記載の保護シーティング(10,110,210,310,410)。
- 前記保護フィルム(4)は、5〜200μmの範囲の厚さを有する、請求項1〜8のいずれか一項に記載の保護シーティング(10,110,210,310,410)。
- 前記保護フィルム(4)は、ポリマー、特に、ポリオレフィンで形成される、請求項1〜9のいずれか一項に記載の保護シーティング(10,110,210,310,410)。
- 半導体サイズのウェハ(W)の為の取扱いシステムにおいて、
半導体サイズの環状フレーム(40)と、
請求項4または5に記載の保護シーティング(110,210),または、請求項4または5に従属する請求項7〜10のいずれか一項に記載の保護シーティング(110,210)と、
を備え、
前記保護シーティング(110,210)は、前記略環状接着層(42)を介して前記環状フレーム(40)に付けられ、前記環状フレーム(40)の中央開口部が前記保護シーティング(110,210)によって閉じられる、取扱いシステム。 - 半導体サイズのウェハ(W)であって、複数のデバイス(7)を備えたデバイス領域(2)を一面に有する、ウェハ(W)と、
請求項1〜5のいずれか一項に記載の前記保護シーティング(10,110,210,310,410)または請求項1〜5のいずれか一項に従属する請求項7〜10のいずれか一項に記載の前記保護シーティング(10,110,210,310,410)と、
を備える組合せにおいて、
前記保護シーティング(10,110,210,310,410)は、前記半導体サイズのウェハ(W)の一面(1)に付けられ、前記半導体サイズのウェハ(W)は、前記保護シーティング(10,110,210,310,410)の前記中央領域に配置され、前記保護フィルム(4)の前記裏の面(4b)の反対側の表の面(4a)は、前記半導体サイズのウェハ(W)の前記一面(1)と直接接触する、組合せ。 - 複数のデバイス(7)を備えたデバイス領域(2)を一面(1)に有するウェハ(W)と、
請求項6に記載の前記保護シーティング(10,310,410)または請求項6に従属する請求項7〜10のいずれか一項に記載の前記保護シーティング(10,310,410)と、
を備える組合せにおいて、
前記保護シーティング(10,310,410)は、前記ウェハ(W)の前記一面(1)に付けられ、前記保護フィルム(4)の前記裏の面(4b)の反対側の表の面(4a)は、前記ウェハ(W)の前記一面(1)と直接接触する、組合せ。
Applications Claiming Priority (1)
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PCT/EP2017/061997 WO2018210426A1 (en) | 2017-05-18 | 2017-05-18 | Protective sheeting for use in processing wafer, handling system for wafer, and combination of wafer and protective sheeting |
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JP2020520117A JP2020520117A (ja) | 2020-07-02 |
JP6940217B2 true JP6940217B2 (ja) | 2021-09-22 |
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JP (1) | JP6940217B2 (ja) |
KR (1) | KR102345923B1 (ja) |
CN (1) | CN110663106B (ja) |
DE (1) | DE112017007552T5 (ja) |
TW (1) | TWI795402B (ja) |
WO (1) | WO2018210426A1 (ja) |
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JP7301468B2 (ja) | 2019-04-17 | 2023-07-03 | 株式会社ディスコ | 被加工物の加工方法、熱圧着方法 |
CN110223942A (zh) * | 2019-06-06 | 2019-09-10 | 长江存储科技有限责任公司 | 晶圆贴膜方法及晶圆贴膜装置 |
DE102019211540A1 (de) | 2019-08-01 | 2021-02-04 | Disco Corporation | Verfahren zum bearbeiten eines substrats |
JP7374657B2 (ja) * | 2019-08-21 | 2023-11-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP2023012964A (ja) * | 2021-07-14 | 2023-01-26 | 株式会社ディスコ | 貼着方法及び貼着装置 |
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JP4447280B2 (ja) | 2003-10-16 | 2010-04-07 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
US20060102080A1 (en) * | 2004-11-12 | 2006-05-18 | Advanced Ion Beam Technology, Inc. | Reduced particle generation from wafer contacting surfaces on wafer paddle and handling facilities |
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