JP4401874B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4401874B2
JP4401874B2 JP2004182366A JP2004182366A JP4401874B2 JP 4401874 B2 JP4401874 B2 JP 4401874B2 JP 2004182366 A JP2004182366 A JP 2004182366A JP 2004182366 A JP2004182366 A JP 2004182366A JP 4401874 B2 JP4401874 B2 JP 4401874B2
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JP
Japan
Prior art keywords
dummy
interlayer insulating
insulating film
metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004182366A
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English (en)
Japanese (ja)
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JP2006005288A5 (enExample
JP2006005288A (ja
Inventor
和朗 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004182366A priority Critical patent/JP4401874B2/ja
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to US11/154,745 priority patent/US7400028B2/en
Publication of JP2006005288A publication Critical patent/JP2006005288A/ja
Publication of JP2006005288A5 publication Critical patent/JP2006005288A5/ja
Priority to US12/107,599 priority patent/US8330253B2/en
Application granted granted Critical
Publication of JP4401874B2 publication Critical patent/JP4401874B2/ja
Priority to US13/532,459 priority patent/US8604592B2/en
Priority to US14/068,666 priority patent/US8921982B2/en
Priority to US14/560,985 priority patent/US9466575B2/en
Priority to US15/280,549 priority patent/US9837365B2/en
Priority to US15/809,697 priority patent/US10672725B2/en
Priority to US16/855,705 priority patent/US11056450B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004182366A 2004-06-21 2004-06-21 半導体装置 Expired - Lifetime JP4401874B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2004182366A JP4401874B2 (ja) 2004-06-21 2004-06-21 半導体装置
US11/154,745 US7400028B2 (en) 2004-06-21 2005-06-17 Semiconductor device
US12/107,599 US8330253B2 (en) 2004-06-21 2008-04-22 Semiconductor device
US13/532,459 US8604592B2 (en) 2004-06-21 2012-06-25 Semiconductor device
US14/068,666 US8921982B2 (en) 2004-06-21 2013-10-31 Semiconductor device
US14/560,985 US9466575B2 (en) 2004-06-21 2014-12-04 Semiconductor device
US15/280,549 US9837365B2 (en) 2004-06-21 2016-09-29 Semiconductor device
US15/809,697 US10672725B2 (en) 2004-06-21 2017-11-10 Semiconductor device
US16/855,705 US11056450B2 (en) 2004-06-21 2020-04-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004182366A JP4401874B2 (ja) 2004-06-21 2004-06-21 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009233128A Division JP5214571B2 (ja) 2009-10-07 2009-10-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2006005288A JP2006005288A (ja) 2006-01-05
JP2006005288A5 JP2006005288A5 (enExample) 2007-07-26
JP4401874B2 true JP4401874B2 (ja) 2010-01-20

Family

ID=35479777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004182366A Expired - Lifetime JP4401874B2 (ja) 2004-06-21 2004-06-21 半導体装置

Country Status (2)

Country Link
US (8) US7400028B2 (enExample)
JP (1) JP4401874B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010004085A (ja) * 2009-10-07 2010-01-07 Renesas Technology Corp 半導体装置

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* Cited by examiner, † Cited by third party
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JP4401874B2 (ja) 2004-06-21 2010-01-20 株式会社ルネサステクノロジ 半導体装置
JP4471852B2 (ja) * 2005-01-21 2010-06-02 パナソニック株式会社 半導体ウェハ及びそれを用いた製造方法ならびに半導体装置
US7176555B1 (en) * 2005-07-26 2007-02-13 United Microelectronics Corp. Flip chip package with reduced thermal stress
US8624346B2 (en) 2005-10-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Exclusion zone for stress-sensitive circuit design
KR100642480B1 (ko) * 2005-12-28 2006-11-02 동부일렉트로닉스 주식회사 반도체 소자 및 금속간 절연막 형성 방법
US7456507B2 (en) * 2006-01-12 2008-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Die seal structure for reducing stress induced during die saw process
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JP5175066B2 (ja) * 2006-09-15 2013-04-03 ルネサスエレクトロニクス株式会社 半導体装置
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US7646078B2 (en) * 2007-01-17 2010-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Die saw crack stopper
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JP5448304B2 (ja) * 2007-04-19 2014-03-19 パナソニック株式会社 半導体装置
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US8125052B2 (en) * 2007-05-14 2012-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure with improved cracking protection
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KR101328552B1 (ko) * 2007-11-16 2013-11-13 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
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US8669597B2 (en) * 2008-05-06 2014-03-11 Spansion Llc Memory device interconnects and method of manufacturing
US7951704B2 (en) * 2008-05-06 2011-05-31 Spansion Llc Memory device peripheral interconnects and method of manufacturing
JP5334459B2 (ja) 2008-05-30 2013-11-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8334582B2 (en) * 2008-06-26 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protective seal ring for preventing die-saw induced stress
KR20100006756A (ko) * 2008-07-10 2010-01-21 삼성전자주식회사 반도체 장치 및 이의 제조 방법
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US8368180B2 (en) * 2009-02-18 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line metal structure
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JP6342033B2 (ja) * 2010-06-30 2018-06-13 キヤノン株式会社 固体撮像装置
JPWO2012095907A1 (ja) * 2011-01-14 2014-06-09 パナソニック株式会社 半導体装置及びフリップチップ実装品
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JP5953974B2 (ja) * 2011-09-15 2016-07-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
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JP5968711B2 (ja) * 2012-07-25 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
JP2010004085A (ja) * 2009-10-07 2010-01-07 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
US11056450B2 (en) 2021-07-06
US8330253B2 (en) 2012-12-11
US10672725B2 (en) 2020-06-02
US20120261835A1 (en) 2012-10-18
US20140054749A1 (en) 2014-02-27
US8604592B2 (en) 2013-12-10
US20170018512A1 (en) 2017-01-19
JP2006005288A (ja) 2006-01-05
US20180166401A1 (en) 2018-06-14
US20050280120A1 (en) 2005-12-22
US20200251429A1 (en) 2020-08-06
US8921982B2 (en) 2014-12-30
US9837365B2 (en) 2017-12-05
US20150084164A1 (en) 2015-03-26
US9466575B2 (en) 2016-10-11
US7400028B2 (en) 2008-07-15
US20080315366A1 (en) 2008-12-25

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