JP4388720B2 - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法 Download PDF

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Publication number
JP4388720B2
JP4388720B2 JP2001315704A JP2001315704A JP4388720B2 JP 4388720 B2 JP4388720 B2 JP 4388720B2 JP 2001315704 A JP2001315704 A JP 2001315704A JP 2001315704 A JP2001315704 A JP 2001315704A JP 4388720 B2 JP4388720 B2 JP 4388720B2
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region
gan
substrate
manufacturing
light emitting
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Japanese (ja)
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JP2003124573A (ja
JP2003124573A5 (enrdf_load_stackoverflow
Inventor
克典 簗嶋
俊雅 小林
中島　　博
健作 元木
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
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  • Junction Field-Effect Transistors (AREA)
JP2001315704A 2001-10-12 2001-10-12 半導体発光素子の製造方法 Expired - Fee Related JP4388720B2 (ja)

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JP2001315704A JP4388720B2 (ja) 2001-10-12 2001-10-12 半導体発光素子の製造方法

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JP2001315704A JP4388720B2 (ja) 2001-10-12 2001-10-12 半導体発光素子の製造方法

Related Child Applications (1)

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JP2008161116A Division JP4802220B2 (ja) 2008-06-20 2008-06-20 半導体素子の製造方法

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JP2003124573A JP2003124573A (ja) 2003-04-25
JP2003124573A5 JP2003124573A5 (enrdf_load_stackoverflow) 2005-06-23
JP4388720B2 true JP4388720B2 (ja) 2009-12-24

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Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920152B2 (ja) * 2001-10-12 2012-04-18 住友電気工業株式会社 構造基板の製造方法および半導体素子の製造方法
KR101167590B1 (ko) 2002-04-15 2012-07-27 더 리전츠 오브 더 유니버시티 오브 캘리포니아 유기금속 화학기상 증착법에 의해 성장된 무극성 α면 질화갈륨 박막
US8809867B2 (en) 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
US7462882B2 (en) 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
JP3916584B2 (ja) 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
JP4390640B2 (ja) 2003-07-31 2009-12-24 シャープ株式会社 窒化物半導体レーザ素子、窒化物半導体発光素子、窒化物半導体ウェハおよびそれらの製造方法
JP4540347B2 (ja) 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法
US7205657B2 (en) * 2004-02-12 2007-04-17 International Rectifier Corporation Complimentary lateral nitride transistors
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
JP5013661B2 (ja) 2004-03-31 2012-08-29 三洋電機株式会社 窒化物系半導体素子の製造方法及び窒化物系半導体素子
JP4953559B2 (ja) * 2004-04-20 2012-06-13 日亜化学工業株式会社 窒化物半導体レーザ素子
US7157297B2 (en) 2004-05-10 2007-01-02 Sharp Kabushiki Kaisha Method for fabrication of semiconductor device
JP2005322786A (ja) * 2004-05-10 2005-11-17 Sharp Corp 窒化物半導体素子及びその製造方法
JP4689195B2 (ja) * 2004-06-10 2011-05-25 シャープ株式会社 半導体素子の製造方法
JP4651312B2 (ja) * 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
JP4322187B2 (ja) 2004-08-19 2009-08-26 シャープ株式会社 窒化物半導体発光素子
JP4895488B2 (ja) * 2004-08-26 2012-03-14 シャープ株式会社 窒化物半導体発光素子、その製造方法、およびウエハ
JP4679867B2 (ja) * 2004-09-27 2011-05-11 シャープ株式会社 窒化物半導体発光素子、及びその製造方法
JP4617907B2 (ja) 2005-02-03 2011-01-26 ソニー株式会社 光集積型半導体発光素子
JP4656410B2 (ja) 2005-09-05 2011-03-23 住友電気工業株式会社 窒化物半導体デバイスの製造方法
US20070221932A1 (en) 2006-03-22 2007-09-27 Sanyo Electric Co., Ltd. Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device
KR20090008321A (ko) 2006-04-28 2009-01-21 스미토모덴키고교가부시키가이샤 질화갈륨 결정을 제작하는 방법 및 질화갈륨 웨이퍼
EP2034525A1 (en) * 2006-05-26 2009-03-11 Rohm Co., Ltd. Nitride semiconductor light emitting element
CN101449395A (zh) 2006-05-26 2009-06-03 罗姆股份有限公司 氮化物半导体发光元件
US8178889B2 (en) 2006-07-05 2012-05-15 Panasonic Corporation Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
JP4546982B2 (ja) * 2007-02-23 2010-09-22 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP4618261B2 (ja) * 2007-03-16 2011-01-26 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP5160828B2 (ja) * 2007-07-26 2013-03-13 三洋電機株式会社 窒化物系半導体素子の製造方法
KR100997908B1 (ko) * 2008-09-10 2010-12-02 박은현 3족 질화물 반도체 발광소자
JP5143076B2 (ja) * 2009-04-09 2013-02-13 シャープ株式会社 窒化物半導体発光素子の製造方法
JP5389728B2 (ja) * 2010-04-26 2014-01-15 フューチャー ライト リミテッド ライアビリティ カンパニー 窒化物系半導体素子の製造方法及び窒化物系半導体素子
JP2011018912A (ja) * 2010-08-09 2011-01-27 Sharp Corp 窒化物半導体素子の製造方法
JP2011049583A (ja) * 2010-10-25 2011-03-10 Sharp Corp 窒化物半導体発光素子
JP6344987B2 (ja) * 2014-06-11 2018-06-20 日本碍子株式会社 １３族元素窒化物結晶層および機能素子
CN106129202B (zh) * 2015-10-04 2018-06-12 美科米尚技术有限公司 发光二极管与其制作方法

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