JP4264104B2 - エレクトレットコンデンサーマイクロホン - Google Patents
エレクトレットコンデンサーマイクロホン Download PDFInfo
- Publication number
- JP4264104B2 JP4264104B2 JP2006510649A JP2006510649A JP4264104B2 JP 4264104 B2 JP4264104 B2 JP 4264104B2 JP 2006510649 A JP2006510649 A JP 2006510649A JP 2006510649 A JP2006510649 A JP 2006510649A JP 4264104 B2 JP4264104 B2 JP 4264104B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electret condenser
- electret
- present
- condenser microphone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 67
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 239000004744 fabric Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
Description
2 空孔
3 絶縁膜
4 下部電極
5 引き出し電極
6 リークホール
7 エレクトレット膜
8 絶縁膜
9 上部電極
10 コンタクト
11 絶縁膜
12 音孔
13 基板
14 配線
15 IC素子
16 コンタクト
17 ケース
18 突起物
19 異方性導電樹脂
20 コンタクト
21 配線
22 基板
25 開口部
Claims (5)
- 開口部が設けられた基板と、
前記開口部を塞ぐように前記基板の一面に接続され且つ音孔及び空孔を有するエレクトレットコンデンサーと、
前記基板の前記一面に接続された駆動回路素子と、
前記エレクトレットコンデンサー及び前記駆動回路素子を覆うように前記基板に取り付けられたケースとを備え、
前記エレクトレットコンデンサーと前記基板との接続箇所において両者の電気的なコンタクトが取られており、
前記駆動回路素子と前記基板との接続箇所において両者の電気的なコンタクトが取られており、
前記音孔は前記開口部を介して外部空間と接続しており、
前記空孔及び前記ケースの内部領域は前記エレクトレットコンデンサーの背部気室となることを特徴とするエレクトレットコンデンサーマイクロホン。 - 請求項1に記載のエレクトレットコンデンサーマイクロホンにおいて、
前記音孔は3μm以下の径を有すると共に複数設けられている。 - 請求項1に記載のエレクトレットコンデンサーマイクロホンにおいて、
前記基板は多層基板である。 - 請求項3に記載のエレクトレットコンデンサーマイクロホンにおいて、
前記多層基板はセラミックからなる。 - 請求項1に記載のエレクトレットコンデンサーマイクロホンにおいて、
前記エレクトレットコンデンサーと前記基板とは、金属突起物及び異方性導電樹脂を用いて接合されている。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065190 | 2004-03-09 | ||
JP2004065190 | 2004-03-09 | ||
PCT/JP2005/003031 WO2005086535A1 (ja) | 2004-03-09 | 2005-02-24 | エレクトレットコンデンサーマイクロホン |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005086535A1 JPWO2005086535A1 (ja) | 2007-08-09 |
JP4264104B2 true JP4264104B2 (ja) | 2009-05-13 |
Family
ID=34918222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006510649A Expired - Fee Related JP4264104B2 (ja) | 2004-03-09 | 2005-02-24 | エレクトレットコンデンサーマイクロホン |
Country Status (7)
Country | Link |
---|---|
US (2) | US7466834B2 (ja) |
EP (1) | EP1722596A4 (ja) |
JP (1) | JP4264104B2 (ja) |
KR (1) | KR20060127166A (ja) |
CN (1) | CN1926919B (ja) |
TW (1) | TW200531569A (ja) |
WO (1) | WO2005086535A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015502693A (ja) * | 2011-11-14 | 2015-01-22 | エプコス アクチエンゲゼルシャフトEpcos Ag | 寄生容量が低減されたmemsマイクロフォン |
Families Citing this family (107)
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EP1722595A4 (en) * | 2004-03-05 | 2010-07-28 | Panasonic Corp | ELECTRET condenser |
US7466834B2 (en) * | 2004-03-09 | 2008-12-16 | Panasonic Corporation | Electret condenser microphone |
EP1638366B1 (en) * | 2004-09-20 | 2015-08-26 | Sonion Nederland B.V. | A microphone assembly |
DE102005008511B4 (de) | 2005-02-24 | 2019-09-12 | Tdk Corporation | MEMS-Mikrofon |
DE102005008512B4 (de) * | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
KR20080009735A (ko) * | 2005-09-09 | 2008-01-29 | 야마하 가부시키가이샤 | 캐패시터 마이크로폰 |
DE102005053767B4 (de) | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
DE102005053765B4 (de) | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102005063640B3 (de) * | 2005-11-10 | 2019-11-21 | Tdk Corporation | MEMS-Package und Verfahren zur Herstellung |
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JP2015502693A (ja) * | 2011-11-14 | 2015-01-22 | エプコス アクチエンゲゼルシャフトEpcos Ag | 寄生容量が低減されたmemsマイクロフォン |
US9980052B2 (en) | 2011-11-14 | 2018-05-22 | Tdk Corporation | MEMS-microphone with reduced parasitic capacitance |
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EP1722596A1 (en) | 2006-11-15 |
TW200531569A (en) | 2005-09-16 |
JPWO2005086535A1 (ja) | 2007-08-09 |
CN1926919A (zh) | 2007-03-07 |
US20070189558A1 (en) | 2007-08-16 |
US8155355B2 (en) | 2012-04-10 |
KR20060127166A (ko) | 2006-12-11 |
US20090080682A1 (en) | 2009-03-26 |
EP1722596A4 (en) | 2009-11-11 |
TWI344310B (ja) | 2011-06-21 |
US7466834B2 (en) | 2008-12-16 |
CN1926919B (zh) | 2011-01-26 |
WO2005086535A1 (ja) | 2005-09-15 |
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