WO2005086535A1 - エレクトレットコンデンサーマイクロホン - Google Patents
エレクトレットコンデンサーマイクロホン Download PDFInfo
- Publication number
- WO2005086535A1 WO2005086535A1 PCT/JP2005/003031 JP2005003031W WO2005086535A1 WO 2005086535 A1 WO2005086535 A1 WO 2005086535A1 JP 2005003031 W JP2005003031 W JP 2005003031W WO 2005086535 A1 WO2005086535 A1 WO 2005086535A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- electret condenser
- electret
- present
- microphone
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 239000004744 fabric Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
Definitions
- the present invention relates to an electret condenser microphone having a vibrating electrode, and more particularly to a structure of an electret condenser microphone (ECM) equipped with an electret condenser formed using MEMS (Micro Electro Mechanical Systems) technology.
- ECM electret condenser microphone
- MEMS Micro Electro Mechanical Systems
- Patent Document 2 discloses a method of manufacturing a microphone using an MEMS technology without using an electret.
- Patent Document 1 JP-A-11-187494
- Patent Document 2 JP 2003-78981 A
- an object of the present invention is to provide an electret condenser microphone having a structure excellent in high frequency characteristics even if it is miniaturized. Means for solving the problem
- an electret condenser microphone includes a substrate provided with an opening, and a sound hole and a hole connected to one surface of the substrate so as to cover the opening.
- a drive circuit element connected to the one surface of the board, and a case attached to the board so as to cover the electret capacitor and the drive circuit element.
- the sound hole is connected to the external space through the opening, and the hole and the inner region of the case are connected to the electret condenser. It becomes the back air chamber.
- the board and the electret condenser are electrically connected without using a wire bonder. Therefore, the occurrence of parasitic capacitance and noise due to one bonding wire can be suppressed. Thereby, the high-frequency characteristics of the electret condenser can be improved.
- the space provided by the case that covers the electret capacitor (the inner area of the case) can be used to increase the substantial volume of the back air chamber of the electret condenser, thus reducing the size of the electret condenser. In this case, the high-frequency characteristics of the capacitor can be improved.
- FIG. 1 (a) is a sectional view of an electret condenser mounted on an electret condenser microphone according to an embodiment of the present invention
- FIG. 1 (b) is a plan view of the electret condenser; .
- FIG. 2 is a cross-sectional view of an electret condenser microphone according to one embodiment of the present invention.
- FIG. 3 is an enlarged cross-sectional view of a connection portion between an electret condenser and a substrate in an electret condenser microphone according to one embodiment of the present invention.
- FIGS. 4 (a) and 4 (b) are cross-sectional views of variations of an electret condenser microphone according to one embodiment of the present invention.
- FIG. 5 is a cross-sectional view showing a state in which the electret condenser microphone according to one embodiment of the present invention is connected to another substrate.
- an electret condenser mounted on the electret condenser microphone according to the present embodiment (hereinafter, referred to as an electret condenser of the present invention) will be described.
- the electret capacitor of the present invention is manufactured by a processing method using only one silicon substrate called a surface micromachining in the MEMS technology.
- FIGS. 1 (a) and 1 (b) are a cross-sectional view and a plan view of an electret condenser 50 of the present invention.
- the silicon substrate 1 is provided with holes 2 by using an anisotropic etching technique, and the silicon substrate 1 has, for example, An insulating film 3 made of a silicon oxide film and a lower electrode 4 made of, for example, a polysilicon film doped with phosphorus are sequentially formed. The upper portion of the hole 2 in the insulating film 3 is removed, while the lower electrode 4 is provided so as to cover the hole 2. An electret film 7 made of, for example, a silicon oxide film is provided on the lower electrode 4 above the hole 2.
- An insulating film 8 made of, for example, a silicon oxide film is provided on a portion of the lower electrode 4 outside the holes 2, and the insulating film 8 is used as a spacer to form the lower electrode 4.
- An upper electrode 9 is provided above.
- the surface of the upper electrode 9 has an insulating film 1 made of, for example, a silicon nitride film. Covered and protected by one.
- the insulating film 8 and the insulating film 11 are provided with a lead electrode 5 that is electrically connected to the lower electrode 4.
- the extraction electrode 5 protrudes from the insulating film 11.
- the lower electrode 4 and the electret film 7 are provided with leak holes 6 connected to the holes 2 so that a pressure difference does not occur between the upper side and the lower side of the electret film 7.
- the insulating film 11 is provided with a contact 10 electrically connected to the upper electrode 9. The contact 10 protrudes from the insulating film 11.
- the contact 10 is formed in an annular shape on the insulating film 11.
- the shape of the contact 10 is not particularly limited as long as there is no break.
- a plurality of sound holes 12 are provided in the upper electrode 9 and the insulating film 11.
- the sound hole 12 connects the space surrounded by the upper electrode 9, the lower electrode 4, and the insulating film 8 to the external space of the electret condenser 50 of the present invention. That is, the electret condenser 50 of the present invention has a configuration in which the electret film 7 is vibrated by receiving the sound pressure (see FIG. 2) and the force on the sound hole 12 side.
- the air holes 2 constitute a back air chamber of the electret condenser 50 of the present invention.
- FIG. 2 is a cross-sectional view of the electret condenser microphone according to the present embodiment, that is, the electret condenser microphone equipped with the electret condenser 50 of the present invention shown in FIGS. 1 (a) and 1 (b).
- the above-described electret condenser 50 of the present invention is connected to one surface of the substrate 13 provided with the opening 25 so as to cover the opening 25.
- the opening 25 is provided in the substrate 13 such that the sound hole 12 of the electret condenser 50 of the present invention is exposed to an external space. That is, the sound hole 12 is connected to the external space via the opening 25.
- the contacts 10 of the electret condenser 50 of the present invention are mechanically and electrically connected to the contacts 16 A provided on one surface of the substrate 13.
- the contact 16A is electrically connected to a wiring 14A provided on the other surface and inside of the substrate 13.
- the electret condenser 50 of the present invention is electrically connected to another electric circuit on the substrate 13 via the contact 16A and the wiring 14A.
- One surface of the substrate 13 is provided with an IC (drive circuit element) for the microphone of the present embodiment.
- Integrated circuit element 15 is connected. Specifically, the IC element 15 has contacts 15a and 15b, and the contact 15a is mechanically and electrically connected to one end of a wiring 14B provided on one surface of the substrate 13. The other end of the wiring 14B is mechanically and electrically connected to the bow I extraction electrode 5 of the electret condenser 50 of the present invention.
- the contact 15b of the IC element 15 is mechanically and electrically connected to a contact 16B provided on one surface of the substrate 13.
- the contact 16B is electrically connected to a wiring 14C provided on the other surface and inside of the substrate 13.
- the IC element 15 is electrically connected to another electric circuit on the substrate 13 via the contact 16B and the wiring 14C.
- case 17 is attached to substrate 13 so as to cover electret condenser 50 and IC element 15 of the present invention.
- the contact 10 of the upper electrode 9 is formed in an annular shape on the insulating film 11 (see FIG. 1B).
- the following effects can be obtained by providing the contact 16A of the substrate 13 in an annular shape on the substrate 13 so as to be aligned with the contact 10 of the upper electrode 9. That is, when the electret condenser 50 of the present invention and the substrate 13 are connected, the contact 10 and the contact 16A constitute an annular connection portion, so that sound is generated between the substrate 13 and the electret condenser 50 of the present invention. This prevents pressure leaks.
- the method for bonding the electret capacitor 50 of the present invention to the substrate 13 in the present embodiment for example, gold is used as a metal material constituting the contact 16 A of the substrate 13 and the contact 10 of the upper electrode 9. It is preferable to use By doing so, the gold constituting each of the contacts 10 and 16A is joined by heat compression, so that the contacts 10 and 16A can be easily joined.
- the contacts 10 and 16A can be joined by the same thermocompression bonding method.
- FIG. 3 is an enlarged cross-sectional view of the connection between the electret condenser and the substrate in the electret condenser microphone according to the present embodiment. That is, as shown in FIG. 3, the contact 16A of the substrate 13 and the contact 10 of the upper electrode 9 are mechanically and electrically connected by using a metal projection 18 called a bump and an anisotropic conductive resin 19. You may connect. Also in this case, since the above-described annular joint can be formed, it is possible to prevent the sound pressure from leaking between the substrate 13 and the electret condenser 50 of the present invention. In addition, since the anisotropic conductive resin 19 is used, the bonding temperature can be lowered as compared with a case where the contacts 10 and 16A, which also have a gold force, are directly bonded, for example. Load can be reduced
- the electret condenser microphone of the present embodiment electrical contact between the board 13 and the electret condenser 50 is made at a mechanically connected portion between the board 13 and the electret condenser 50. Since the electret condenser 50 and the electret condenser 50 are electrically connected without using a wire bonder, the occurrence of parasitic capacitance and noise due to the bonding wire can be suppressed. Thus, the high-frequency characteristics of the electret condenser 50 can be improved. In addition, as a back air chamber required for the electret condenser 50, not only the holes 2 shown in FIG.
- a small electret condenser microphone excellent in high frequency characteristics such as high frequency stability can be manufactured.
- the diameter of each hole in the porous cloth is about 3 ⁇ m or more.
- the diameter of the sound hole 12 (see FIG. 1) of the electret condenser 50 of the present invention is set to 3 m or less, which is smaller than each hole of the porous cloth.
- contamination of dust can be prevented. That is, in the ECM according to the present embodiment, it is not necessary to arrange a face cloth to prevent dust from being mixed in, so that the number of components can be reduced.
- the plane shape of the sound hole 12 is not limited to a circle, but when a shape other than a circle is adopted, it is preferable to set the maximum diameter of the sound hole 12 to 3 ⁇ m or less. No.
- a sound input hole for the microphone is provided.
- the opening (corresponding to the opening 25 in the present embodiment) was basically disposed on the upper surface of the sound pressure sensing portion of the microphone, there were restrictions on the structure of a mobile phone or the like in which the microphone was mounted.
- the position of the input hole is changed by devising the shape of an acoustic shield such as a rubber holder that covers the ECM.
- the sound hole 12 and the opening 25 can be prevented from overlapping when viewed from above.
- the opening 25 can be formed so that the sound hole 12 is not directly visible from the external space.
- the electret condenser 50 of the present invention since the electret condenser 50 of the present invention is not directly exposed to the external space, the electret condenser 50 can be protected, and a highly reliable microphone can be manufactured.
- the substrate 13 has, for example, a three-layer structure (for example, a lower substrate 13a, an intermediate layer The substrate 13b and the multilayer ceramic substrate of the upper substrate 13c) are used.
- a cavity serving as the opening 25 can be easily formed in advance.
- FIG. 5 is a cross-sectional view showing a state in which the electret condenser microphone according to the present embodiment is connected to another substrate.
- the contact 20 is formed on the surface excluding the surface where the sound hole 12 is exposed (that is, the surface of the substrate 13), for example, the surface of the case 17.
- the electret microphone of the present embodiment is electrically and mechanically connected to the substrate 22 via the contact 20.
- the electret capacitor 50 of the present invention includes a contact 16A provided on one surface of the substrate 13, a wiring 21A provided inside the substrate 13 and the case 17, and a contact provided on one surface of the case 17. It is electrically connected to the substrate 22 via each of the terminals 20A. Further, the IC element 15 is connected via a contact 16B provided on one surface of the substrate 13, a wiring 21B provided inside the substrate 13 and the case 17, and a contact 20B provided on one surface of the case 17, respectively. It is electrically connected to the substrate 22.
- the present invention relates to an electret condenser microphone and, when applied to an electret condenser microphone equipped with an electret condenser formed by using MEMS technology, provides a compact electret condenser microphone with excellent high-frequency characteristics. This is very useful because it can improve the reliability of a mobile phone or the like on which the microphone is mounted.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05719481A EP1722596A4 (en) | 2004-03-09 | 2005-02-24 | ELECTRET CONDENSER MICROPHONE |
US10/592,116 US7466834B2 (en) | 2004-03-09 | 2005-02-24 | Electret condenser microphone |
CN2005800063832A CN1926919B (zh) | 2004-03-09 | 2005-02-24 | 驻极体电容式麦克风 |
JP2006510649A JP4264104B2 (ja) | 2004-03-09 | 2005-02-24 | エレクトレットコンデンサーマイクロホン |
US12/276,820 US8155355B2 (en) | 2004-03-09 | 2008-11-24 | Electret condenser microphone |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065190 | 2004-03-09 | ||
JP2004-065190 | 2004-03-09 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/592,116 A-371-Of-International US7466834B2 (en) | 2004-03-09 | 2005-02-24 | Electret condenser microphone |
US12/276,820 Division US8155355B2 (en) | 2004-03-09 | 2008-11-24 | Electret condenser microphone |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005086535A1 true WO2005086535A1 (ja) | 2005-09-15 |
Family
ID=34918222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/003031 WO2005086535A1 (ja) | 2004-03-09 | 2005-02-24 | エレクトレットコンデンサーマイクロホン |
Country Status (7)
Country | Link |
---|---|
US (2) | US7466834B2 (ja) |
EP (1) | EP1722596A4 (ja) |
JP (1) | JP4264104B2 (ja) |
KR (1) | KR20060127166A (ja) |
CN (1) | CN1926919B (ja) |
TW (1) | TW200531569A (ja) |
WO (1) | WO2005086535A1 (ja) |
Cited By (19)
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KR100722687B1 (ko) | 2006-05-09 | 2007-05-30 | 주식회사 비에스이 | 부가적인 백 챔버를 갖는 지향성 실리콘 콘덴서 마이크로폰 |
KR100722689B1 (ko) | 2006-05-03 | 2007-05-30 | 주식회사 비에스이 | 부가적인 백 챔버를 갖는 실리콘 콘덴서 마이크로폰 |
KR100722686B1 (ko) | 2006-05-09 | 2007-05-30 | 주식회사 비에스이 | 부가적인 백 챔버를 갖고 기판에 음향홀이 형성된 실리콘콘덴서 마이크로폰 |
JP2008028512A (ja) * | 2006-07-19 | 2008-02-07 | Yamaha Corp | 圧力センサ及びその製造方法 |
JP2008532369A (ja) * | 2005-02-24 | 2008-08-14 | エプコス アクチエンゲゼルシャフト | Memsマイクロフォンを備えた電気モジュール |
JP2008271426A (ja) * | 2007-04-24 | 2008-11-06 | Matsushita Electric Works Ltd | 音響センサ |
JP2009071813A (ja) * | 2007-08-20 | 2009-04-02 | Yamaha Corp | 振動トランスデューサ |
JP2009515443A (ja) * | 2005-11-10 | 2009-04-09 | エプコス アクチエンゲゼルシャフト | Memsマイクロフォン、memsマイクロフォンの製造方法およびmemsマイクロフォンの組み込み方法 |
JP2009260924A (ja) * | 2008-03-18 | 2009-11-05 | Panasonic Corp | マイクロフォンとその製造方法 |
JP2009540566A (ja) * | 2006-06-05 | 2009-11-19 | アクスティカ,インコーポレイテッド | Memsデバイスおよびその製造方法 |
WO2010113384A1 (ja) * | 2009-04-01 | 2010-10-07 | パナソニック株式会社 | 半導体装置とその製造方法 |
WO2011104784A1 (ja) * | 2010-02-24 | 2011-09-01 | パナソニック株式会社 | 変換体モジュール及びその製造方法 |
WO2011148778A1 (ja) * | 2010-05-27 | 2011-12-01 | オムロン株式会社 | 音響トランスデューサ、および該音響トランスデューサを利用したマイクロフォン |
WO2011158429A1 (ja) * | 2010-06-16 | 2011-12-22 | パナソニック株式会社 | 変換体モジュールとその製造方法 |
US8169041B2 (en) | 2005-11-10 | 2012-05-01 | Epcos Ag | MEMS package and method for the production thereof |
US8582788B2 (en) | 2005-02-24 | 2013-11-12 | Epcos Ag | MEMS microphone |
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US7466834B2 (en) * | 2004-03-09 | 2008-12-16 | Panasonic Corporation | Electret condenser microphone |
EP1638366B1 (en) * | 2004-09-20 | 2015-08-26 | Sonion Nederland B.V. | A microphone assembly |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
KR20080009735A (ko) * | 2005-09-09 | 2008-01-29 | 야마하 가부시키가이샤 | 캐패시터 마이크로폰 |
KR20080005854A (ko) * | 2006-07-10 | 2008-01-15 | 야마하 가부시키가이샤 | 압력 센서 및 그의 제조 방법 |
JP2008067173A (ja) * | 2006-09-08 | 2008-03-21 | Yamaha Corp | マイクロフォンモジュール、その取付構造及び携帯電子機器 |
KR100870991B1 (ko) * | 2007-01-30 | 2008-12-01 | 주식회사 비에스이 | 세라믹 패키지를 이용한 콘덴서 마이크로폰 |
US8705775B2 (en) * | 2007-04-25 | 2014-04-22 | University Of Florida Research Foundation, Inc. | Capacitive microphone with integrated cavity |
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US8085956B2 (en) * | 2007-12-14 | 2011-12-27 | Knowles Electronics, Llc | Filter circuit for an electret microphone |
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Also Published As
Publication number | Publication date |
---|---|
EP1722596A1 (en) | 2006-11-15 |
TW200531569A (en) | 2005-09-16 |
JPWO2005086535A1 (ja) | 2007-08-09 |
CN1926919A (zh) | 2007-03-07 |
US20070189558A1 (en) | 2007-08-16 |
US8155355B2 (en) | 2012-04-10 |
KR20060127166A (ko) | 2006-12-11 |
US20090080682A1 (en) | 2009-03-26 |
EP1722596A4 (en) | 2009-11-11 |
JP4264104B2 (ja) | 2009-05-13 |
TWI344310B (ja) | 2011-06-21 |
US7466834B2 (en) | 2008-12-16 |
CN1926919B (zh) | 2011-01-26 |
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