JP4200926B2 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
JP4200926B2
JP4200926B2 JP2004067489A JP2004067489A JP4200926B2 JP 4200926 B2 JP4200926 B2 JP 4200926B2 JP 2004067489 A JP2004067489 A JP 2004067489A JP 2004067489 A JP2004067489 A JP 2004067489A JP 4200926 B2 JP4200926 B2 JP 4200926B2
Authority
JP
Japan
Prior art keywords
power
wiring
cell
circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004067489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005259879A5 (enExample
JP2005259879A (ja
Inventor
博美 緒方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34824577&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4200926(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2004067489A priority Critical patent/JP4200926B2/ja
Priority to US11/070,205 priority patent/US7274210B2/en
Priority to KR1020050019736A priority patent/KR101114555B1/ko
Priority to EP10193384.4A priority patent/EP2287906B1/en
Priority to EP05290530A priority patent/EP1575091B1/en
Priority to EP10193386.9A priority patent/EP2287907B1/en
Priority to EP14190410.2A priority patent/EP2835827B1/en
Priority to DE602005025951T priority patent/DE602005025951D1/de
Priority to EP14190409.4A priority patent/EP2835826B1/en
Priority to CNB2005100537135A priority patent/CN1324685C/zh
Priority to CN2007101070196A priority patent/CN101060120B/zh
Publication of JP2005259879A publication Critical patent/JP2005259879A/ja
Priority to US11/808,975 priority patent/US7459934B2/en
Priority to US11/808,976 priority patent/US7456659B2/en
Publication of JP2005259879A5 publication Critical patent/JP2005259879A5/ja
Priority to US12/289,571 priority patent/US7696788B2/en
Publication of JP4200926B2 publication Critical patent/JP4200926B2/ja
Application granted granted Critical
Priority to US13/340,130 priority patent/USRE43912E1/en
Priority to US13/687,996 priority patent/USRE48694E1/en
Priority to US14/301,197 priority patent/USRE48373E1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63J—AUXILIARIES ON VESSELS
    • B63J2/00—Arrangements of ventilation, heating, cooling, or air-conditioning
    • B63J2/12—Heating; Cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
    • B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/40—Mixing liquids with liquids; Emulsifying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/80—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Ocean & Marine Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2004067489A 2004-03-10 2004-03-10 半導体集積回路 Expired - Lifetime JP4200926B2 (ja)

Priority Applications (17)

Application Number Priority Date Filing Date Title
JP2004067489A JP4200926B2 (ja) 2004-03-10 2004-03-10 半導体集積回路
US11/070,205 US7274210B2 (en) 2004-03-10 2005-03-03 Semiconductor integrated circuit
KR1020050019736A KR101114555B1 (ko) 2004-03-10 2005-03-09 반도체 집적회로
EP10193384.4A EP2287906B1 (en) 2004-03-10 2005-03-09 Semiconductor integrated circuit
EP05290530A EP1575091B1 (en) 2004-03-10 2005-03-09 Semiconductor integrated circuit
EP10193386.9A EP2287907B1 (en) 2004-03-10 2005-03-09 Semiconductor integrated circuit
EP14190410.2A EP2835827B1 (en) 2004-03-10 2005-03-09 Semiconductor integrated circuit
DE602005025951T DE602005025951D1 (de) 2004-03-10 2005-03-09 Integrierter Halbleiterschaltkreis
EP14190409.4A EP2835826B1 (en) 2004-03-10 2005-03-09 Semiconductor integrated circuit
CN2007101070196A CN101060120B (zh) 2004-03-10 2005-03-10 半导体集成电路
CNB2005100537135A CN1324685C (zh) 2004-03-10 2005-03-10 半导体集成电路
US11/808,975 US7459934B2 (en) 2004-03-10 2007-06-14 Semiconductor integrated circuit
US11/808,976 US7456659B2 (en) 2004-03-10 2007-06-14 Semiconductor integrated circuit
US12/289,571 US7696788B2 (en) 2004-03-10 2008-10-30 Semiconductor integrated circuit
US13/340,130 USRE43912E1 (en) 2004-03-10 2011-12-29 Semiconductor integrated circuit
US13/687,996 USRE48694E1 (en) 2004-03-10 2012-11-28 Semiconductor integrated circuit
US14/301,197 USRE48373E1 (en) 2004-03-10 2014-06-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004067489A JP4200926B2 (ja) 2004-03-10 2004-03-10 半導体集積回路

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2007263815A Division JP5029272B2 (ja) 2007-10-09 2007-10-09 半導体集積回路
JP2007263814A Division JP4229207B2 (ja) 2007-10-09 2007-10-09 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2005259879A JP2005259879A (ja) 2005-09-22
JP2005259879A5 JP2005259879A5 (enExample) 2007-07-26
JP4200926B2 true JP4200926B2 (ja) 2008-12-24

Family

ID=34824577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004067489A Expired - Lifetime JP4200926B2 (ja) 2004-03-10 2004-03-10 半導体集積回路

Country Status (6)

Country Link
US (7) US7274210B2 (enExample)
EP (5) EP2835827B1 (enExample)
JP (1) JP4200926B2 (enExample)
KR (1) KR101114555B1 (enExample)
CN (2) CN1324685C (enExample)
DE (1) DE602005025951D1 (enExample)

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* Cited by examiner, † Cited by third party
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JP4200926B2 (ja) * 2004-03-10 2008-12-24 ソニー株式会社 半導体集積回路
JP2007095787A (ja) * 2005-09-27 2007-04-12 Nec Electronics Corp 半導体集積回路
JP4621113B2 (ja) * 2005-10-28 2011-01-26 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2007243077A (ja) * 2006-03-13 2007-09-20 Renesas Technology Corp 半導体集積回路装置
JP5038654B2 (ja) * 2006-06-06 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置
JP4144892B2 (ja) * 2006-08-28 2008-09-03 キヤノン株式会社 光電変換装置及び撮像装置
US7649787B2 (en) * 2006-09-05 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100835425B1 (ko) * 2006-09-14 2008-06-04 동부일렉트로닉스 주식회사 Ｍｔｃｍｏｓ반도체 집적회로
KR100772269B1 (ko) * 2006-09-21 2007-11-01 동부일렉트로닉스 주식회사 Ｍｔｃｍｏｓ 반도체 집적회로의 설계방법
JP2008098353A (ja) * 2006-10-11 2008-04-24 Nec Electronics Corp 半導体集積回路
JP5198785B2 (ja) 2007-03-30 2013-05-15 ルネサスエレクトロニクス株式会社 半導体装置
JP4962173B2 (ja) 2007-07-02 2012-06-27 ソニー株式会社 半導体集積回路
JP5528662B2 (ja) 2007-09-18 2014-06-25 ソニー株式会社 半導体集積回路
JP4636077B2 (ja) * 2007-11-07 2011-02-23 ソニー株式会社 半導体集積回路
US8922247B2 (en) * 2007-11-14 2014-12-30 Arm Limited Power controlling integrated circuit and retention switching circuit
JP2009170650A (ja) * 2008-01-16 2009-07-30 Sony Corp 半導体集積回路およびその配置配線方法
JP4535136B2 (ja) * 2008-01-17 2010-09-01 ソニー株式会社 半導体集積回路、および、スイッチの配置配線方法
JP4492736B2 (ja) 2008-06-12 2010-06-30 ソニー株式会社 半導体集積回路
JP5152160B2 (ja) * 2009-11-24 2013-02-27 ソニー株式会社 半導体集積回路
TWI403742B (zh) * 2009-12-22 2013-08-01 Mstar Semiconductor Inc 靜態瞬態電壓降分析裝置及方法
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JP5540389B2 (ja) * 2012-09-14 2014-07-02 ソニー株式会社 半導体集積回路
JP6031675B2 (ja) * 2012-10-01 2016-11-24 株式会社ソシオネクスト 半導体装置のレイアウト構造およびレイアウト方法
JP5542191B2 (ja) * 2012-12-10 2014-07-09 ルネサスエレクトロニクス株式会社 半導体集積回路の製造方法
KR102000643B1 (ko) * 2012-12-27 2019-07-16 엘지디스플레이 주식회사 유기발광 표시장치
CN104459302B (zh) * 2013-09-23 2017-05-17 赛恩倍吉科技顾问（深圳）有限公司 功率偏差检测装置
US9058459B1 (en) * 2013-12-30 2015-06-16 Samsung Electronics Co., Ltd. Integrated circuit layouts and methods to reduce leakage
JP5773338B2 (ja) * 2014-03-10 2015-09-02 ソニー株式会社 半導体集積回路
JP6384210B2 (ja) * 2014-09-02 2018-09-05 株式会社ソシオネクスト 半導体装置
US10262981B2 (en) * 2016-04-29 2019-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system for and method of forming an integrated circuit
US10318694B2 (en) * 2016-11-18 2019-06-11 Qualcomm Incorporated Adaptive multi-tier power distribution grids for integrated circuits
KR102541506B1 (ko) 2018-01-17 2023-06-08 삼성전자주식회사 스위치 셀들을 포함하는 반도체 장치
CN116472605B (zh) * 2020-11-27 2025-06-24 株式会社索思未来 半导体集成电路装置的设计方法、半导体集成电路装置以及计算机可读记录介质
JP7635557B2 (ja) * 2021-01-19 2025-02-26 株式会社ソシオネクスト 半導体装置
WO2022186012A1 (ja) * 2021-03-05 2022-09-09 株式会社ソシオネクスト 半導体集積回路装置
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Also Published As

Publication number Publication date
USRE48373E1 (en) 2020-12-29
USRE43912E1 (en) 2013-01-08
US7456659B2 (en) 2008-11-25
EP2287907A2 (en) 2011-02-23
EP2835827A2 (en) 2015-02-11
US7459934B2 (en) 2008-12-02
EP1575091A2 (en) 2005-09-14
EP2835826A2 (en) 2015-02-11
EP2287907A3 (en) 2011-04-20
CN101060120B (zh) 2010-06-23
DE602005025951D1 (de) 2011-03-03
EP2287907B1 (en) 2018-11-28
US20050200383A1 (en) 2005-09-15
CN101060120A (zh) 2007-10-24
US20070241790A1 (en) 2007-10-18
EP2287906B1 (en) 2016-03-09
EP2835827B1 (en) 2019-06-12
CN1667815A (zh) 2005-09-14
US7696788B2 (en) 2010-04-13
USRE48694E1 (en) 2021-08-17
EP2835826A3 (en) 2015-04-22
US20070241779A1 (en) 2007-10-18
US20090079469A1 (en) 2009-03-26
US7274210B2 (en) 2007-09-25
KR20060043789A (ko) 2006-05-15
CN1324685C (zh) 2007-07-04
EP2287906A3 (en) 2011-04-20
EP1575091A3 (en) 2009-03-18
EP2835827A3 (en) 2015-04-22
EP2835826B1 (en) 2019-06-26
EP2287906A2 (en) 2011-02-23
EP1575091B1 (en) 2011-01-19
KR101114555B1 (ko) 2012-02-27
JP2005259879A (ja) 2005-09-22

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